公开(公告)号：US07998780B2

公开(公告)日：2011-08-16

申请号：US12158947

申请日：2006-11-06

Applicant: Pierre Blanchard

Inventor： Pierre Blanchard

IPC: H01L21/00

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L24/05 ,  H01L24/48 ,  H01L27/14603 ,  H01L27/14632 ,  H01L27/14687 ,  H01L27/14689 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01079 ,  H01L2924/01094 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The invention relates to the fabrication of thinned substrate image sensors, and notably color image sensors. After the fabrication steps carried out from the front face of a silicon substrate the front face is transferred onto a substrate. The silicon is thinned, and the connection terminals are produced by the rear face. A multiplicity of localized contact holes are opened through the thinning silicon, in the location of a connection terminal. The holes exposing a first conductive layer (24) are formed during the front face steps. Aluminum (42) is deposited on the rear face, in contact with the silicon, with the aluminum penetrating into the openings and coming into contact with the first layer. The aluminum is etched to delimit the connection terminal. Finally, a peripheral trench is opened through the entire thickness of the silicon layer, and this trench completely surrounds the connection terminal.

Abstract translation: 本发明涉及薄化衬底图像传感器，特别是彩色图像传感器的制造。 在从硅衬底的正面执行制造步骤之后，将前表面转印到衬底上。 硅被薄化，并且连接端子由后表面产生。 在连接端子的位置，多个局部接触孔通过薄化硅开放。 在前面步骤期间形成露出第一导电层（24）的孔。 铝（42）沉积在与硅接触的后表面上，铝穿透入开口并与第一层接触。 蚀刻铝以界定连接端子。 最后，通过硅层的整个厚度打开外围沟槽，并且该沟槽完全围绕连接端子。

公开(公告)号：US20100314776A1

公开(公告)日：2010-12-16

申请号：US12518030

申请日：2007-12-11

Applicant: Pierre Blanchard

Inventor： Pierre Blanchard

IPC: H01L23/52 ,  H01L21/70

CPC classification number: H01L27/14636 ,  H01L24/05 ,  H01L27/1464 ,  H01L27/14683 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05556 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

Abstract: The invention relates to the fabrication of electronic circuits on a thinned semiconductor substrate. To produce a connection pad on the back side of the thinned substrate, the procedure is as follows: an integrated circuit is produced on an unthinned substrate, in which a portion of a polycrystalline silicon layer (18) dedicated for the connection of the pad is provided. The circuit is transferred onto a transfer substrate (30) and then its back side is thinned. A via is opened in the thinned semiconductor layer (12) in order to gain access to the polycrystalline silicon; aluminum (80) is deposited and this layer is etched so as to define a pad which is in contact with the internal interconnects of the integrated circuit by way of the polycrystalline silicon.

Abstract translation: 本发明涉及在薄型半导体衬底上制造电子电路。 为了在减薄的基板的背面上产生连接焊盘，过程如下：在未固化的衬底上产生集成电路，其中专用于焊盘连接的多晶硅层（18）的一部分是 提供。 电路被转印到转印衬底（30）上，然后将其背面变薄。 在减薄的半导体层（12）中打开通孔，以便进入多晶硅; 沉积铝（80），并且蚀刻该层以限定通过多晶硅与集成电路的内部互连接触的焊盘。

公开(公告)号：US20070184653A1

公开(公告)日：2007-08-09

申请号：US10591178

申请日：2005-02-21

Applicant: Pierre Blanchard

Inventor： Pierre Blanchard

IPC: H01L21/44

CPC classification number: H01L29/76816

Abstract: The invention relates to integrated circuits comprising both conductive gates deposited above a semiconductor substrate and a diode is formed between two electrodes. In order to achieve a diode of very small dimensions, the following procedure is adopted: producing the electrodes (ELn, GRST, then thermally oxidizing the electrodes, then exposing the surface of the substrate between the electrodes, then the following operations: depositing doped polycrystalline silicon in order to form one pole (42) of the diode, the substrate forming the other pole, delimiting a desired silicon pattern covering the space left between the electrodes and also covering a region lying outside this space, depositing an insulating layer, locally etching an opening into this insulating layer above the polycrystalline silicon outside the space lying between the electrodes, in order to form an offset contact zone, depositing a metal layer and etching the metal layer.

Abstract translation: 本发明涉及包括沉积在半导体衬底上方的导电栅极和二极管之间的二极管的集成电路。 为了实现尺寸非常小的二极管，采用以下步骤：产生电极（ELn，GRST，然后热氧化电极，然后在电极之间暴露衬底的表面），然后进行以下操作：沉积掺杂多晶 硅以便形成二极管的一极（42），所述衬底形成另一极，限定覆盖留在电极之间的空间的期望的硅图案，并且还覆盖位于该空间外部的区域，沉积绝缘层，局部蚀刻 在位于电极之间的空间之外的多晶硅上方的绝缘层的开口，以形成偏移接触区，沉积金属层和蚀刻金属层。

公开(公告)号：US5245301A

公开(公告)日：1993-09-14

申请号：US878860

申请日：1992-05-05

Applicant: Laurent Portrait ,  Pierre Blanchard ,  Joel Soquet

Inventor： Laurent Portrait ,  Pierre Blanchard ,  Joel Soquet

IPC: H01P1/06

CPC classification number: H01P1/067

Abstract: This microwave link connects a fixed set of electronic equipment to a mobile set of electronic equipment that can be shifted between two extreme positions, at least one of which is an operating position. The link is, for example, one between a radar transceiver and a radar antenna that can be retracted into a silo. It is constituted by a sequence of rigid rectangular waveguide elements hinged at their ends by means of hinges comprising at least one rotating connector formed by two rectangular-window flanges, fitted together and rotational movable with respect to each other. This rotational connector has two operational positions at 180.degree. with respect to each other where it can transmit microwave power and where the rectangular windows of its flanges coincide, and it assumes one of these operational positions when the movable electronic equipment is in the operating position.

Abstract translation: 该微波链路将固定的一组电子设备连接到移动的电子设备组件，该电子设备可以在两个极限位置之间移动，其中至少一个是操作位置。 该链路例如是雷达收发器和可以缩回到筒仓中的雷达天线之间的链路。 它由一系列刚性的矩形波导元件组成，它们通过铰链铰接在其端部，该铰链包括至少一个由两个矩形窗口法兰形成的旋转连接件，该两个矩形窗口凸缘彼此装配在一起并且可相对于彼此移动。 该旋转连接器相对于彼此具有180度的两个操作位置，其中它可以传递微波功率，并且其凸缘的矩形窗口重合，并且当可移动电子设备处于操作位置时，该操作位置处于这些操作位置之一。

公开(公告)号：US4742027A

公开(公告)日：1988-05-03

申请号：US15292

申请日：1987-02-17

Applicant: Pierre Blanchard ,  Pierrick Descure ,  Jacques Chautemps

Inventor： Pierre Blanchard ,  Pierrick Descure ,  Jacques Chautemps

IPC: H01L27/146 ,  H01L27/148 ,  H01L31/0216 ,  H01L21/425

CPC classification number: H01L31/02161 ,  H01L27/148

Abstract: A gate structure for integrated circuits and more especially for photosensitive charge-transfer devices comprises elements of the gate-insulator-semiconductor type. The gate structure is constituted by a thin film-layer of transparent or semi-transparent conductive material covered with a layer of compatible insulating material having a refractive index higher than 1.5.

Abstract translation: 用于集成电路的栅极结构，更特别地用于光敏电荷转移器件的栅极结构包括栅极 - 绝缘体 - 半导体型的元件。 栅极结构由透明或半透明导电材料的薄膜层构成，覆盖有折射率高于1.5的相容绝缘材料层。

公开(公告)号：US4679301A

公开(公告)日：1987-07-14

申请号：US782140

申请日：1985-09-30

Applicant: Pierre Blanchard ,  Jean P. Cortot

Inventor： Pierre Blanchard ,  Jean P. Cortot

IPC: H01L29/78 ,  H01L21/027 ,  H01L21/339 ,  H01L29/423 ,  H01L21/283

CPC classification number: H01L29/66954 ,  H01L21/0272 ,  H01L29/42396 ,  Y10S148/147

Abstract: A process for forming closely spaced silicon or silicon-silicide gate electrodes for an integrated circuit involving the successive deposition over the semiconductive substrate of layers of silicon oxide, polycrystalline silicon, a metal, for example, tantalum which can be converted to a silicide, an oxide layer and a masking layer. Then the masking layer is patterned by photolithography and the exposed oxide layer etched in a fashion to undercut the overlying masking layer to leave an overhang. Then the exposed metal layer is removed, and the metal forming a silicide redeposited through the opening in the masking layer on the central portion of the exposed polycrystalline corresponding to the opening. The metal is then converted to a silicide and the polycrystalline silicon free of the silicide is removed.

Abstract translation: 用于形成用于集成电路的紧密间隔的硅或硅硅化物栅电极的方法，该集成电路涉及在二氧化硅，多晶硅，金属例如可转化为硅化物的钽的半导体衬底上的连续沉积， 氧化物层和掩模层。 然后通过光刻对掩模层进行图案化，并以暴露的氧化层蚀刻以削弱叠加的掩蔽层以留下悬垂的方式。 然后去除暴露的金属层，并且形成硅化物的金属通过对应于开口的暴露的多晶硅的中心部分上的掩模层中的开口再沉积。 然后将金属转化为硅化物，并且除去不含硅化物的多晶硅。

公开(公告)号：US20110047528A1

公开(公告)日：2011-02-24

申请号：US12446042

申请日：2007-10-16

Applicant: Paul Blanchard ,  Luc Chevalier ,  Pierre Blanchard

Inventor： Paul Blanchard ,  Luc Chevalier ,  Pierre Blanchard

IPC: G06F9/44

CPC classification number: G06F8/20 ,  G06Q10/06

Abstract: An online qualification management system that can be used to perform qualification management, such as candidate assessment for recruiting or promoting purposes, job description simulations, and learning management. A computing entity can execute a software application to implement a qualification management project that interacts online with a candidate to perform an assessment procedure on the candidate. The qualification management project includes a set of modules intended to interact individually with the candidate being assessed. One of the modules of the set may be a test module for testing the candidate for one or more skills. Another one of the modules of the set may be a virtual simulation module and implement a virtual simulation, the virtual simulation having a scenario defined by a chain of events and including a plurality of graphical scenes. The virtual simulation can also involve one or more avatars and/or interactive graphical objects. An author can use an authoring tool to create the qualification management project.

Abstract translation: 可用于执行资格管理的在线资格管理系统，如招聘或推广目的候选人评估，工作描述模拟和学习管理。 计算实体可以执行软件应用程序来实施与候选者在线交互以对候选者执行评估程序的资格管理项目。 资格管理项目包括一组旨在与被评估候选人单独交互的模块。 该组件的一个模块可以是用于测试候选人的一种或多种技能的测试模块。 该组的另一个模块可以是虚拟模拟模块并实现虚拟仿真，虚拟模拟具有由事件链定义并包括多个图形场景的场景。 虚拟模拟还可以涉及一个或多个化身和/或交互式图形对象。 作者可以使用创作工具创建资格管理项目。

公开(公告)号：US06951900B2

公开(公告)日：2005-10-04

申请号：US10203782

申请日：2001-02-14

Applicant: Pierre Blanchard ,  Maurice Husson

Inventor： Pierre Blanchard ,  Maurice Husson

IPC: B29B7/00 ,  B29K23/00 ,  B29K105/16 ,  C08J3/22 ,  C08J5/18 ,  C08K3/00 ,  C08L21/00 ,  C08L23/00 ,  C08K3/26

CPC classification number: C08J3/226 ,  C08J2423/00

Abstract: The invention relates to the use of isotactic polypropylenes of very great fluidity for the preparation of concentrates of fillers which can be used in thermoplastics of the olefinic type such as polypropylene, polyethylene and as a general rule: the polymers used alone or in a mixture, based on ethylenic monomers containing 2 to 6 atoms of carbon polymerized alone or in a mixture. The invention also relates to the concentrates of fillers or master batches prepared from isotactic polypropylenes of very great fluidity. The invention finally relates to the loaded thermoplastic materials obtained with the addition of selected polypropylenes according to the invention, and the industrial products manufactured from, or containing, such thermoplastic materials.

Abstract translation: 本发明涉及非常大流动性的全同立构聚丙烯用于制备可用于烯烃类热塑性塑料如聚丙烯，聚乙烯的填料浓缩物，并且一般规则是：单独使用或混合使用的聚合物， 基于单独或以混合物聚合的含有2-6个碳原子的烯烃单体。 本发明还涉及由具有非常大流动性的全同立构聚丙烯制备的填料或母料的浓缩物。 本发明最终涉及通过添加根据本发明的选择的聚丙烯获得的装载的热塑性材料，以及由这种热塑性材料制造或包含这些热塑性材料的工业产品。

公开(公告)号：US20050119419A1

公开(公告)日：2005-06-02

申请号：US10502794

申请日：2003-02-03

Applicant: Pierre Blanchard ,  Maurice Husson

Inventor： Pierre Blanchard ,  Maurice Husson

IPC: C08L101/00 ,  C08F220/06 ,  C08F220/12 ,  C08J3/22 ,  C08K3/00 ,  C09D7/02 ,  C09D17/00 ,  C08F20/54

CPC classification number: C08J3/226 ,  C08F220/06 ,  C08F220/12 ,  C08J2433/00 ,  C09D7/45 ,  C09D17/004

Abstract: The present invention concerns copolymers containing carboxyl groups simultaneously with a function of a binding agent and a function of a rheology modifier or viscosity reducer or grinding aid agent for aqueous suspensions of pigments and/or mineral fillers, used to obtain grains of pigments and/or mineral fillers, reconstituted and formed from elementary particles with a specific BET surface ranging from 0.5 m2/g to 200 m2/g, grains that can easily be re-dispersed in thermoplastic resins. The invention also concerns the agglomerate minerals obtained and their uses.

Abstract translation: 本发明涉及同时具有粘合剂功能的羧基的共聚物，以及用于获得颜料和/或颜料的颜料和/或矿物填料的水性悬浮液的流变改性剂或粘度降低剂或研磨助剂的功能， 矿物填料，由具有0.5m 2 / g至200m 2 / g的特定BET表面的元素颗粒重构和形成，可容易地重新分散的颗粒 在热塑性树脂中。 本发明还涉及获得的附聚矿物及其用途。

公开(公告)号：US06787575B1

公开(公告)日：2004-09-07

申请号：US09719574

申请日：2001-05-14

Applicant: Jean Pierre Fichou ,  Maurice Husson ,  Georges Ravet ,  Pierre Blanchard

Inventor： Jean Pierre Fichou ,  Maurice Husson ,  Georges Ravet ,  Pierre Blanchard

IPC: B01F1742

CPC classification number: C09C3/08 ,  C01P2004/50 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/10 ,  C01P2006/22 ,  C08G65/2639 ,  C08G65/3355 ,  C08G2101/0083 ,  C08K9/04 ,  C08L75/04

Abstract: The invention relates to the technological sector of mineral fillers used in the sector which manufactures polyurethane foams and in particular fillers of the carbonate, hydroxide, silicate, sulphate type and similar mineral fillers. The invention relates in particular to a method of treating mineral fillers of a specific grain size with the aid of treatment agents of the organic phosphate type, incorporating a de-agglomeration step, and optionally a selection step, with a view to improving the techniques used to manufacture polyurethane foams either by foaming without an auxiliary blowing agent or with a blowing agent such as CO2, and composite polyurethane, whilst reducing the time needed to mix this treated filler treated with the polyol and other reagents. Numerous applications for block foams or moulded foams, for mattresses and similar, the automotive industry, various industrial components, etc . . .

Abstract translation: 本发明涉及在该领域中使用的矿物填料的技术领域，其制造聚氨酯泡沫，特别是碳酸盐，氢氧化物，硅酸盐，硫酸盐型和类似的矿物填料的填料。本发明特别涉及一种处理矿物填料的方法 借助于有机磷酸盐类型的处理剂，结合去附聚步骤和任选的选择步骤，特定的晶粒尺寸，以改进用于制造聚氨酯泡沫的技术，无需通过发泡而不需要辅助发泡剂或 使用发泡剂如二氧化碳和复合聚氨酯，同时减少了用多元醇和其他试剂混合处理的填料所需的时间。多种应用于块状泡沫或模制泡沫，床垫等，汽车工业，各种工业 组件等。 。 。