Probing a device
    6.
    发明申请
    Probing a device 失效
    探测设备

    公开(公告)号:US20050179455A1

    公开(公告)日:2005-08-18

    申请号:US10781369

    申请日:2004-02-18

    CPC classification number: G01R31/2886 G01R31/2887

    Abstract: An electronic device is moved into a first position such that terminals of the electronic device are adjacent probes for making electrical contact with the terminals. The electronic device is then moved horizontally or diagonally such that the terminals contact the probes. Test data are then communicated to and from the electronic device through the probes.

    Abstract translation: 电子设备移动到第一位置,使得电子设备的端子是与端子电接触的相邻探头。 然后电子设备水平或对角地移动,使得端子接触探针。 然后通过探头将测试数据传送到电子设备和从电子设备传送。

    Methods for improving corrosion resistance and applications in electrical connectors
    7.
    发明授权
    Methods for improving corrosion resistance and applications in electrical connectors 有权
    提高耐腐蚀性的方法和电连接器中的应用

    公开(公告)号:US08889997B2

    公开(公告)日:2014-11-18

    申请号:US13461135

    申请日:2012-05-01

    Abstract: A method of manufacturing an electrical conductor includes providing a substrate layer, depositing a graphene layer on the substrate layer and selectively depositing boundary cappings on defects of the graphene layer to inhibit corrosion of the substrate layer at the defects. Optionally, the boundary cappings may include nano-sized crystals deposited only at the defects. The selectively depositing may include electrodepositing boundary cappings on exposed portions of the substrate layer at the defects. The selectively depositing may include reacting boundary capping material with exposed portions of the substrate layer at the defects to deposit the boundary cappings only at the defects.

    Abstract translation: 制造电导体的方法包括提供衬底层,在衬底层上沉积石墨烯层,并且在石墨烯层的缺陷上选择性地沉积边界帽以抑制缺陷处的衬底层的腐蚀。 任选地,边界覆盖物可以包括仅在缺陷处沉积的纳米尺寸的晶体。 选择性沉积可以包括在缺陷处在基底层的暴露部分上电沉积边界覆盖物。 选择性沉积可以包括使边界覆盖材料与衬底层的暴露部分处于缺陷处,以仅在缺陷处沉积边界覆盖层。

    CARBON NANOTUBE CONTACT STRUCTURES
    8.
    发明申请
    CARBON NANOTUBE CONTACT STRUCTURES 失效
    碳纳米管接触结构

    公开(公告)号:US20100112828A1

    公开(公告)日:2010-05-06

    申请号:US11466039

    申请日:2006-08-21

    CPC classification number: G01R1/06755 H01R13/03 Y10T29/49204

    Abstract: A carbon nanotube contact structure can be used for making pressure connections to a DUT. The contact structure can be formed using a carbon nanotube film or with carbon nanotubes in solution. The carbon nanotube film can be grown in a trench in a sacrificial substrate in which a contact structure such as a beam or contact element is then formed by metal plating. The film can also be formed on a contact element and have metal posts dispersed therein to provide rigidity and elasticity. Contact structures or portions thereof can also be plated with a solution containing carbon nanotubes. The resulting contact structure can be tough, and can provide good electrical conductivity.

    Abstract translation: 可以使用碳纳米管接触结构来与DUT进行压力连接。 可以使用碳纳米管膜或溶液中的碳纳米管来形成接触结构。 碳纳米管膜可以在牺牲基板中的沟槽中生长,其中通过金属电镀形成诸如光束或接触元件的接触结构。 膜也可以形成在接触元件上,并且金属柱分散在其中以提供刚性和弹性。 接触结构或其部分也可以镀有含有碳纳米管的溶液。 所得到的接触结构可以是韧性的,并且可以提供良好的导电性。

    METHODS FOR IMPROVING CORROSION RESISTANCE AND APPLICATIONS IN ELECTRICAL CONNECTORS
    9.
    发明申请
    METHODS FOR IMPROVING CORROSION RESISTANCE AND APPLICATIONS IN ELECTRICAL CONNECTORS 有权
    改善电连接器耐腐蚀性和应用的方法

    公开(公告)号:US20130292161A1

    公开(公告)日:2013-11-07

    申请号:US13461135

    申请日:2012-05-01

    Abstract: A method of manufacturing an electrical conductor includes providing a substrate layer, depositing a graphene layer on the substrate layer and selectively depositing boundary cappings on defects of the graphene layer to inhibit corrosion of the substrate layer at the defects. Optionally, the boundary cappings may include nano-sized crystals deposited only at the defects. The selectively depositing may include electrodepositing boundary cappings on exposed portions of the substrate layer at the defects. The selectively depositing may include reacting boundary capping material with exposed portions of the substrate layer at the defects to deposit the boundary cappings only at the defects.

    Abstract translation: 制造电导体的方法包括提供衬底层,在衬底层上沉积石墨烯层,并且在石墨烯层的缺陷上选择性地沉积边界帽以抑制缺陷处的衬底层的腐蚀。 任选地,边界覆盖物可以包括仅在缺陷处沉积的纳米尺寸的晶体。 选择性沉积可以包括在缺陷处在基底层的暴露部分上电沉积边界覆盖物。 选择性沉积可以包括使边界覆盖材料与衬底层的暴露部分处于缺陷处,以仅在缺陷处沉积边界覆盖层。

    Composite motion probing
    10.
    发明授权
    Composite motion probing 失效
    复合运动探测

    公开(公告)号:US07868632B2

    公开(公告)日:2011-01-11

    申请号:US11697603

    申请日:2007-04-06

    CPC classification number: G01R31/2887 G01R1/06705 G01R31/2886

    Abstract: An electronic device is moved into a first position with respect to probes for making electrical contact with the device. The electronic device is then moved into a second position in which the electronic device is pressed against the probes, compressing the probes. The movement into the second position includes two components. One component of the movement tends to press the electronic device against the probes, compressing the probes and inducing a stress in the probes. The second movement tends to reduce that stress. Test data are then communicated to and from the electronic device through the probes.

    Abstract translation: 电子设备相对于用于与设备电接触的探针移动到第一位置。 然后将电子设备移动到第二位置,其中电子设备被压靠在探针上,压缩探针。 进入第二位置的运动包括两个部件。 移动的一个组件倾向于将电子装置压靠在探针上,压缩探针并在探针中引起应力。 第二动作往往会减轻压力。 然后通过探头将测试数据传送到电子设备和从电子设备传送。

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