公开(公告)号：US06403497B1

公开(公告)日：2002-06-11

申请号：US09568917

申请日：2000-05-10

申请人： Hideaki Oka ,  Satoshi Takenaka ,  Masafumi Kunii

发明人： Hideaki Oka ,  Satoshi Takenaka ,  Masafumi Kunii

IPC分类号： H01L2131

CPC分类号： H01L21/02667 ,  H01L21/2022 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

摘要： A polycrystalline or polysilicon film having large grain size, such as 1 &mgr;m to 2 &mgr;m in diameter or greater, is obtained over the methods of the prior art by initially forming a silicon film, which may be comprised of amorphous silicon or micro-crystalline silicon or contains micro-crystal regions in the amorphous phase, at a low temperature via a chemical vapor deposition (CVD) method, such as by plasma chemical vapor deposition (PCVD) with silane gas diluted with, for example, hydrogen, argon or helium at a temperature, for example, in the range of room temperature to 600° C. This is followed by solid phase recrystallization of the film to form a polycrystalline film which is conducted at a relatively low temperature in the range of about 550° C. to 650° C. in an inert atmosphere, e.g., N or Ar, for a period of about several hours to 40 or more hours wherein the temperature is gradually increased, e.g., at a temperature rise rate below 20° C./min, preferably about 5° C./min, to a prescribed recrystallization temperature within the range about 550° C. to 650° C. Further, between the step of film formation and the step of solid phase recrystallization, the film may be thermally treated at a relatively low temperature, e.g., over 300° C. and preferably between approximately 400° C. to 500° C. for a period of several minutes, such as 30 minutes, to remove hydrogen from the film prior to solid phase recrystallization.

摘要翻译： 通过最初形成可以由非晶硅或微晶硅构成的硅膜，通过现有技术的方法获得具有大晶粒尺寸，例如1μm至2μm直径或更大的多晶或多晶硅膜 或在低温下通过化学气相沉积（CVD）方法，例如通过等离子体化学气相沉积（PCVD），其中硅烷气体用例如氢气，氩气或氦气稀释，在非晶相中包含微晶区域。 温度例如在室温至600℃的范围内。随后进行固相重结晶以形成多晶膜，该多晶膜在相对较低的温度下在约550℃至 在惰性气氛（例如N或Ar）中，在温度逐渐升高的情况下，例如在升温速率低于20℃/分钟的情况下，时间为约数小时-40小时，优选为650℃ 约5℃/分钟 在约550℃至650℃的范围内的规定的再结晶温度。此外，在成膜步骤和固相重结晶步骤之间，可以在相对较低的温度例如超过300℃下热处理该膜 并且优选在约400℃至500℃之间，持续数分钟，例如30分钟的时间，以在固相重结晶之前从膜中除去氢。

公开(公告)号：US06235563B1

公开(公告)日：2001-05-22

申请号：US07790107

申请日：1991-11-07

申请人： Hideaki Oka ,  Satoshi Takenaka ,  Masafumi Kunii

发明人： Hideaki Oka ,  Satoshi Takenaka ,  Masafumi Kunii

IPC分类号： H01L2132

CPC分类号： H01L21/02667 ,  H01L21/2022 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

摘要： An improved polycrystalline or polysilicon film having large grain size, such as 1 &mgr;m to 2 &mgr;m in diameter or greater, is obtained over the methods of the prior art by initially forming a silicon film, which may be comprised of amorphous silicon or micro-crystalline silicon or contains micro-crystal regions in the amorphous phase, at a low temperature via a chemical vapor deposition (CVD) method, such as by plasma chemical vapor deposition (PCVD) with silane gas diluted with, for example, hydrogen, argon or helium at a temperature, for example, in the range of room temperature to 600° C. This is followed by solid phase recrystallization of the film to form a polycrystalline film which is conducted at a relatively low temperature in the range of about 550° C. to 650° C. in an inert atmosphere, e.g., N or Ar, for a period of about several hours to 40 or more hours wherein the temperature is gradually increased, e.g., at a temperature rise rate below 20° C./min, preferably about 5° C./min, to a prescribed recrystallization temperature within the range about 550° C. to 650° C. Further, between the step of film formation and the step of solid phase recrystallization, the film may be thermally treated at a relatively low temperature, e.g., over 300° C. and preferably between approximately 400° C. to 500° C. for a period of several minutes, such as 30 minutes, to remove hydrogen from the film prior to solid phase recrystallization.

摘要翻译： 通过最初形成可以由非晶硅或微晶体构成的硅膜，通过现有技术的方法获得具有大晶粒尺寸的改善的多晶或多晶硅膜，例如1μm至2μm直径或更大的晶粒 硅或通过化学气相沉积（CVD）方法在低温下包含非晶相中的微晶区域，例如通过用例如氢，氩或氦稀释的硅烷气体的等离子体化学气相沉积（PCVD） 在例如室温至600℃的温度下进行，然后进行固相重结晶，形成多晶膜，该多晶膜在约550℃的较低温度下进行。 在惰性气氛（例如N或Ar）中，在温度逐渐升高的情况下，例如在升温速度低于20℃/分钟的情况下，在约数小时至40小时的时间内， 优选约5° 在约550℃至650℃的范围内的规定的再结晶温度。此外，在成膜步骤和固相重结晶步骤之间，可以在相对低的温度下热处理 ，例如超过300℃，优选在约400℃至500℃之间，持续几分钟，例如30分钟，以在固相重结晶之前从膜中除去氢。

公开(公告)号：US20090159893A1

公开(公告)日：2009-06-25

申请号：US12331159

申请日：2008-12-09

申请人： Natsuki Otani ,  Tsutomu Tanaka ,  Masafumi Kunii ,  Masanobu Ikeda ,  Ryoichi Ito

发明人： Natsuki Otani ,  Tsutomu Tanaka ,  Masafumi Kunii ,  Masanobu Ikeda ,  Ryoichi Ito

IPC分类号： H01L31/0368 ,  H01L31/12

CPC分类号： H01L31/153 ,  G02F2201/58 ,  H01L27/14632 ,  H01L31/112

摘要： A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate semiconductor region configured to be formed over the element formation surface between the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region, and have an impurity concentration lower than impurity concentrations of the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region. The light-receiving element further includes: a first electrode configured to be electrically connected to the first-conductivity-type semiconductor region; a second electrode configured to be electrically connected to the second-conductivity-type semiconductor region; and a control electrode configured to be formed in an opposed area that exists on the element formation surface.

摘要翻译： 光接收元件包括：第一导电型半导体区域，被配置为形成在元件形成表面上; 构造成形成在所述元件形成表面上的第二导电型半导体区域; 中间半导体区域，被配置为形成在第一导电型半导体区域和第二导电型半导体区域之间的元件形成表面之上，并且具有低于第一导电类型半导体区域的杂质浓度的杂质浓度 和第二导电型半导体区域。 光接收元件还包括：第一电极，被配置为电连接到第一导电型半导体区域; 第二电极，其被配置为电连接到所述第二导电型半导体区域; 以及控制电极，其被配置为形成在存在于所述元件形成表面上的相对区域中。

公开(公告)号：US20070298553A1

公开(公告)日：2007-12-27

申请号：US11763744

申请日：2007-06-15

申请人： Masafumi Kunii

发明人： Masafumi Kunii

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/20

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78696

摘要： The production method of the thin film transistor according to the present invention involves the reactive heat CVD process to form the active layer and the source-drain layer. This offers the advantage of eliminating additional steps to crystallize the semiconductor thin film. The resulting stacked thin film transistor is composed of originally crystalline semiconductor thin films. Having the active layer and the source-drain layer formed from crystalline semiconductor thin film, the stacked thin film transistor has a faster working speed than the one formed from amorphous semiconductor thin film. Another advantage of eliminating steps for crystallization is uniform quality which would otherwise be adversely affected by crystallization. In addition, the fact that the source-drain layer is formed from a previously doped crystalline semiconductor thin film means that there is no need for any step to introduce impurities after film formation.

摘要翻译： 根据本发明的薄膜晶体管的制造方法涉及反应热CVD工艺以形成有源层和源极 - 漏极层。 这提供了除去结晶半导体薄膜的附加步骤的优点。 所形成的叠层薄膜晶体管由原来的晶体半导体薄膜组成。 具有由晶体半导体薄膜形成的有源层和源极 - 漏极层，堆叠的薄膜晶体管的工作速度比由非晶半导体薄膜形成的速度更快。 消除结晶步骤的另一个优点是质量均匀，否则会受到结晶的不利影响。 此外，源极 - 漏极层由先前掺杂的晶体半导体薄膜形成的事实意味着在成膜之后不需要引入杂质的任何步骤。

公开(公告)号：US20060051903A1

公开(公告)日：2006-03-09

申请号：US11196109

申请日：2005-08-03

申请人： Masafumi Kunii

发明人： Masafumi Kunii

IPC分类号： H01L21/8232 ,  H01L21/335

CPC分类号： H01L27/12 ,  H01L27/1248

摘要： TFTs are formed on a substrate, and a layer insulation film containing no hydroxyl group in at least a lowermost layer film is formed in the state of covering the TFTs. Thereafter, a heat treatment is conducted in a moisture atmosphere, whereby oxygen or hydrogen is bound to dangling bonds present in a semiconductor thin film constituting the TFTs, and an enhancement of the denseness of the layer insulation film is contrived. The layer insulation film includes silicon nitride, for example.

摘要翻译： 在基板上形成TFT，在覆盖TFT的状态下，形成在至少最下层膜中不含羟基的层绝缘膜。 此后，在水分气氛中进行热处理，由此氧或氢结合存在于构成TFT的半导体薄膜中的悬挂键，并且提高了层间绝缘膜的致密性。 层间绝缘膜例如包括氮化硅。

公开(公告)号：US06548830B1

公开(公告)日：2003-04-15

申请号：US09616685

申请日：2000-07-14

申请人： Takashi Noguchi ,  Yasuhiro Kanaya ,  Masafumi Kunii ,  Yuji Ikeda ,  Setsuo Usui

发明人： Takashi Noguchi ,  Yasuhiro Kanaya ,  Masafumi Kunii ,  Yuji Ikeda ,  Setsuo Usui

IPC分类号： H01L2976

CPC分类号： H01L21/02686 ,  B82Y10/00 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/02609 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/28273 ,  H01L29/66765 ,  H01L29/78678 ,  Y10T428/24372

摘要： A semiconductor device comprising a source/drain region and a channel region formed in a silicon thin film composed of a group of silicon single crystal grains which are each approximately rectangular-shaped and which are arranged in a grid pattern on the base body, where a selected orientation of the silicon single crystal grains to the surface of the base body is approximately the direction.

摘要翻译： 一种半导体器件，包括源极/漏极区域和形成在由硅单晶颗粒组成的硅薄膜中的沟槽区域，所述硅单晶晶体每个近似矩形并且以基板上的网格图案布置，其中 硅单晶晶粒的基体的表面的选择取向大致为<100>方向。

公开(公告)号：US5943107A

公开(公告)日：1999-08-24

申请号：US128091

申请日：1998-08-03

申请人： Hisashi Kadota ,  Yuko Inoue ,  Takenobu Urazono ,  Masafumi Kunii ,  Shinj Nakamura

发明人： Hisashi Kadota ,  Yuko Inoue ,  Takenobu Urazono ,  Masafumi Kunii ,  Shinj Nakamura

IPC分类号： G02F1/1333 ,  G02F1/1335 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/786

CPC分类号： G02F1/136227 ,  G02F1/133514 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2001/133357

摘要： A color display device such as an active-matrix type liquid crystal display apparatus has a first substrate having pixel electrodes arranged in the form of the matrix, switching elements associated with respective pixel electrodes and color filters aligned with the respective pixel electrodes. The first substrate is composed of a laminate structure including, superposed in the mentioned sequence, a first layer having the switching elements, a second layer having the color filters, a third layer including a planarization film which fills convexities presented by the switching elements and the color filters, and a fourth layer having the pixel electrodes aligned with the color filter. The display device also has a second substrate including a counter electrode and adjoined to the first substrate leaving a predetermined gap left therebetween. A liquid crystal is charged in the gap between the first and second substrates.

摘要翻译： 诸如有源矩阵型液晶显示装置的彩色显示装置具有第一基板，其具有以矩阵形式布置的像素电极，与各个像素电极相关的开关元件和与各个像素电极对准的滤色器。 第一基板由层叠结构构成，其包括以上述顺序叠加具有开关元件的第一层，具有滤色器的第二层，包括填充由开关元件呈现的凸部的平坦化膜的第三层和 滤色器，以及具有与滤色器对准的像素电极的第四层。 显示装置还具有包括对置电极的第二基板，并且与第一基板邻接，留下预定的间隙。 在第一和第二基板之间的间隙中充入液晶。

公开(公告)号：US09328414B2

公开(公告)日：2016-05-03

申请号：US12216081

申请日：2008-06-30

申请人： Masafumi Kunii

发明人： Masafumi Kunii

IPC分类号： H01L21/00 ,  C23C16/02 ,  C23C16/24 ,  C23C16/455 ,  C23C16/509 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66

CPC分类号： H01L27/127 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/45512 ,  C23C16/45565 ,  C23C16/5096 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/0262 ,  H01L27/1214 ,  H01L29/66765

摘要： Disclosed herein is a method of manufacturing a thin film semiconductor device includes the step of forming a silicon thin film including a crystalline structure on a substrate by a plasma CVD process in which a high order silane gas represented by the formula SinH2n+2 (n=2, 3, . . . ) and a hydrogen gas are used as film forming gases.

公开(公告)号：US08269927B2

公开(公告)日：2012-09-18

申请号：US12435493

申请日：2009-05-05

申请人： Masafumi Kunii ,  Go Yamanaka

发明人： Masafumi Kunii ,  Go Yamanaka

IPC分类号： G02F1/133 ,  G02F1/1343

CPC分类号： G02F1/13318

摘要： Disclosed herein is a liquid crystal display including a liquid crystal panel including, a first substrate, a second substrate opposed to said first substrate, and a liquid crystal layer interposed between said first substrate and said second substrate, a plurality of pixels being arrayed in a first direction and in a second direction orthogonal to said first direction in a pixel area provided in a plane where said first substrate and said second substrate are opposed.

摘要翻译： 本发明公开了一种液晶显示装置，其特征在于，包括：液晶面板，具有第一基板，与所述第一基板相对的第二基板以及插入在所述第一基板和所述第二基板之间的液晶层，多个像素排列成 在与所述第一方向垂直的第二方向上设置在所述第一基板和所述第二基板相对的平面中的像素区域中。

公开(公告)号：US06563136B2

公开(公告)日：2003-05-13

申请号：US09921532

申请日：2001-08-03

申请人： Masafumi Kunii

发明人： Masafumi Kunii

IPC分类号： H01L2904

CPC分类号： H01L27/1214 ,  H01L27/1251 ,  H01L27/127 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645

摘要： A thin-film semiconductor device which has a pixel array section and a peripheral circuit section arranged around it, said pixel array section containing pixel electrodes and thin-film transistors for pixels which switch the pixel electrodes, said peripheral circuit section containing driving circuits each having thin-film transistors for circuits which drive the thin-film transistors for pixels, said each thin-film transistor having the laminate structure having a semiconductor thin film, a gate electrode, and a gate insulating film interposed between them, and said semiconductor thin film having a channel region inside the end of the gate electrode, a lightly doped region outside said channel region, a heavily doped region outside said lightly doped region, and a concentration boundary which separates said lightly doped region and heavily doped region from each other, wherein said concentration boundary measured from the end of said gate electrode is positioned more inside in said thin-film transistor for circuits than in said thin-film transistor for pixels.

摘要翻译： 一种薄膜半导体器件，其具有布置在其周围的像素阵列部分和外围电路部分，所述像素阵列部分包含像素电极和用于切换像素电极的像素的薄膜晶体管，所述外围电路部分包含驱动电路，每个驱动电路具有 所述薄膜晶体管具有驱动用于像素的薄膜晶体管的电路，所述薄膜晶体管具有层叠结构，其具有介于其间的半导体薄膜，栅极电极和栅极绝缘膜，并且所述半导体薄膜 在栅电极的端部内部具有通道区域，在所述沟道区域外部的轻掺杂区域，所述轻掺杂区域外部的重掺杂区域和将所述轻掺杂区域和重掺杂区域彼此分离的浓度边界，其中 从所述栅电极的端部测量的所述浓度边界位于所述第th中更靠内侧 用于电路的膜内晶体管比用于像素的所述薄膜晶体管。