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14 条记录 (耗时 0.031 秒)

    Radiation-emitting semiconductor element and method for producing the same
    1.
    发明申请
    Radiation-emitting semiconductor element and method for producing the same 审中-公开
    辐射发射半导体元件及其制造方法

    公开(公告)号：US20060011925A1

    公开(公告)日：2006-01-19

    申请号：US11065769

    申请日：2005-02-25

    申请人： Stefan Bader ,  Berthold Hahn ,  Volker Harle ,  Hans-Jurgen Lugauer ,  Manfred Mundbrod-Vangerow ,  Dominik Eisert

    发明人： Stefan Bader ,  Berthold Hahn ,  Volker Harle ,  Hans-Jurgen Lugauer ,  Manfred Mundbrod-Vangerow ,  Dominik Eisert

    IPC分类号： H01L29/22

    CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

    摘要： This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.

    摘要翻译： 本发明描述了一种基于GaN的辐射发射半导体元件，其半导体主体由不同GaN半导体层（1）的堆叠构成。 半导体本体具有第一主表面（3）和第二主表面（4），所产生的辐射通过第一主表面（3）发射，反射器（6）在第二主表面（4）上产生 ）。 本发明还描述了根据本发明的半导体部件的制造方法。 首先将中间层（9）施加到基板（8），然后施加构成部件的半导体主体的多个GaN层（1）。 然后分离基板（8）和中间层（9），并且在半导体本体的主表面上产生反射器（6）。

    GaN-based light emitting-diode chip and a method for producing same
    3.
    发明申请
    GaN-based light emitting-diode chip and a method for producing same 审中-公开
    GaN基发光二极管芯片及其制造方法

    公开(公告)号：US20070012944A1

    公开(公告)日：2007-01-18

    申请号：US11508504

    申请日：2006-08-23

    申请人： Stefan Bader ,  Berthold Hahn ,  Volker Harle ,  Hans-Jurgen Lugauer ,  Manfred Mundbrod-Vangerow

    发明人： Stefan Bader ,  Berthold Hahn ,  Volker Harle ,  Hans-Jurgen Lugauer ,  Manfred Mundbrod-Vangerow

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0079 ,  H01L33/10 ,  H01L33/145 ,  H01L33/32 ,  H01L33/40 ,  H01L33/405 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence is provided on substantially the full area of its p-side with a reflective, bondable p-contact layer. The substrate is provided on its main surface facing away from the epitaxial layer sequence with a contact metallization that covers only a portion of said main surface, and the decoupling of light from the chip takes place via a bare region of the main surface of the substrate and via the chip sides. A further LED chip has epitaxial layers only. The p-type epitaxial layer is provided on substantially the full area of the main surface facing away from the n-conductive epitaxial layer with a reflective, bondable p-contact layer, and the n-conductive epitaxial layer is provided on its main surface facing away from the p-conductive epitaxial layer with an n-contact layer that covers only a portion of said main surface. The decoupling of light from the chip takes place via the bare region of the main surface of the n-conductive epitaxial layer and via the chip sides.

    摘要翻译： 一种LED芯片，包括导电和无辐射基板，其中外延层序列在其p侧的基本上整个区域上设置有反射的，可粘合的p接触层。 衬底在其主表面上设置为背离外延层序列，接触金属化仅覆盖所述主表面的一部分，并且来自芯片的光的解耦通过衬底的主表面的裸露区域进行 并通过芯片侧面。 另外的LED芯片仅具有外延层。 p型外延层在主表面的大致整个区域上设置有背向n导电外延层的反射式可结合p接触层，并且n导电外延层设置在其主表面上 远离p导电外延层，其中n接触层仅覆盖所述主表面的一部分。 来自芯片的光的解耦通过n导电外延层的主表面的裸露区域和芯片侧进行。

    Lighting module and method the production thereof
    10.
    发明申请
    Lighting module and method the production thereof 有权
    照明模块及其制作方法

    公开(公告)号：US20060163601A1

    公开(公告)日：2006-07-27

    申请号：US10547217

    申请日：2004-01-15

    申请人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer

    发明人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer

    IPC分类号： H01L33/00 ,  H01L29/24

    CPC分类号： H01L33/486 ,  H01L25/0753 ,  H01L33/22 ,  H01L33/507 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/16195 ,  H01L2924/00014 ,  H01L2924/00

    摘要： An illumination module with at least one thin-film light emitting diode chip which is applied on a chip carrier having electrical connecting conductors and has a first and a second electrical connection side and also an epitaxially fabricated semiconductor layer sequence. The semiconductor layer sequence has an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region arranged between these two semiconductor layers and is arranged on a carrier. Moreover, it has a reflective layer at a main area facing toward the carrier, which reflective layer reflects at least one part of the electromagnetic radiation generated in the semiconductor layer sequence back into the latter. The semiconductor layer sequence has at least one semiconductor layer with at least one micropatterned, rough area. The coupling-out area of the thin-film light emitting diode chip is essentially defined by a main area remote from the reflective layer and is free of housing material such as potting or encapsulating material.

    摘要翻译： 一种具有至少一个薄膜发光二极管芯片的照明模块，其被施加在具有电连接导体的芯片载体上，并且具有第一和第二电连接侧以及外延制造的半导体层序列。 半导体层序列具有n导电半导体层，p导电半导体层和布置在这两个半导体层之间的电磁辐射产生区域，并且布置在载体上。 此外，它在面向载体的主要区域上具有反射层，该反射层将半导体层序列中产生的电磁辐射的至少一部分反射回其中。 半导体层序列具有至少一个具有至少一个微图案化粗糙区域的半导体层。 薄膜发光二极管芯片的耦合输出区域基本上由远离反射层的主区域限定，并且不具有封装材料，例如灌封或封装材料。