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    Radiation-emitting semiconductor element
    1.
    发明授权
    Radiation-emitting semiconductor element 有权
    辐射发射半导体元件

    公开(公告)号：US07446341B2

    公开(公告)日：2008-11-04

    申请号：US10669227

    申请日：2003-09-24

    申请人： Stefan Bader ,  Michael Fehrer ,  Wilhelm Stein ,  Stephan Kaiser ,  Volker Harle ,  Berthold Hahn

    发明人： Stefan Bader ,  Michael Fehrer ,  Wilhelm Stein ,  Stephan Kaiser ,  Volker Harle ,  Berthold Hahn

    IPC分类号： H01L27/15

    CPC分类号： H01L33/387 ,  H01L33/405 ,  H01L33/46

    摘要： A radiation-emitting semiconductor component having a semiconductor body (1), which has an active zone (2), in which, for the purpose of electrical contact connection, a patterned contact layer (3) is applied on a surface of the semiconductor body. Interspaces (4) are distributed over the contact layer (3) and are provided for the purpose of forming free areas (5) on the surface which are not covered by the contact layer (3). The free areas (5) are covered with a mirror (6). The separation of the two functions of contact connection and reflection makes it possible to achieve a particularly high performance of the component.

    摘要翻译： 具有半导体本体（1）的辐射发射半导体部件具有活动区域（2），其中为了电接触连接，将图案化接触层（3）施加在半导体本体的表面上 。 间隙（4）分布在接触层（3）上，并且被提供用于在表面上形成未被接触层（3）覆盖的自由区域（5）。 自由区域（5）用镜子（6）覆盖。 接触连接和反射的两个功能的分离使得可以实现特别高的部件性能。

    Method for Production of a Radiation-Emitting Semiconductor Chip
    6.
    发明申请
    Method for Production of a Radiation-Emitting Semiconductor Chip 有权
    辐射发射半导体芯片的制造方法

    公开(公告)号：US20080093611A1

    公开(公告)日：2008-04-24

    申请号：US11579194

    申请日：2004-04-29

    申请人： Berthold Hahn ,  Stephan Kaiser ,  Volker Harle

    发明人： Berthold Hahn ,  Stephan Kaiser ,  Volker Harle

    IPC分类号： H01L21/04 ,  H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/0079

    摘要： A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip. The semiconductor layer sequence is grown on a substrate. A mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer. The semiconductor layer sequence is separated from the substrate by means of a lift-off method, in which a separation zone in the semiconductor layer sequence is at least partly decomposed in such a way that anisotropic residues of a constituent of the separation zone, in particular a metallic constituent of the separation layer, remain at the separation surface of the semiconductor layer sequence, from which the substrate is separated. The separation surface—provided with the residues—of the semiconductor layer sequence with a dry etching method, a gaseous etchant or a wet-chemical etchant, wherein the anisotropic residues are at least temporarily used as an etching mask. A semiconductor chip is produced according to such a method.

    摘要翻译： 一种用于对薄膜发​​光二极管芯片的半导体层序列的辐射发射表面进行微图形化的方法。 半导体层序列在衬底上生长。 在半导体层序列上形成或施加镜层，其反射回到半导体层序列中，半导体层序列在其操作期间在半导体层序列中产生的辐射的至少一部分并且被指向镜层。 通过剥离方法将半导体层序列与衬底分离，其中半导体层序列中的分离区域至少部分地被分解，使得分离区的成分的各向异性残留物 分离层的金属成分保留在半导体层序列的分离表面，基板从该分离表面分离。 具有干蚀刻方法的半导体层序列的残留物的分离表面，气体蚀刻剂或湿化学蚀刻剂，其中各向异性残余物至少暂时用作蚀刻掩模。 根据这种方法制造半导体芯片。

    Method for fabricating a plurality of electromagnetic radiation emitting semiconductor chips
    8.
    发明申请
    Method for fabricating a plurality of electromagnetic radiation emitting semiconductor chips 有权
    制造多个电磁辐射半导体芯片的方法

    公开(公告)号：US20090130787A1

    公开(公告)日：2009-05-21

    申请号：US12290097

    申请日：2008-10-27

    申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

    发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

    IPC分类号： H01L21/20

    CPC分类号： H01L33/20 ,  H01L33/46

    摘要： Method for fabricating a semiconductor chip which emits electromagnetic radiation, wherein to improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack based on GaN, which comprises an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between these two semiconductor layers. The surface of the p-conducting semiconductor layer which faces away from the radiation-generating region is provided with three-dimensional pyramid-like structures. A mirror layer is arranged over the whole of this textured surface. A textured reflection surface is formed between the mirror layer and the p-conducting semiconductor layer.

    摘要翻译： 用于制造发射电磁辐射的半导体芯片的方法，其中为了提高发射电磁辐射的半导体芯片的光输出，纹理反射表面被集成在半导体芯片的p侧上。 半导体芯片具有基于GaN的外延生产的半导体层堆叠，其包括n导电半导体层，p导电半导体层和布置在这两个半导体层之间的电磁辐射产生区域。 面向辐射产生区域的p导电半导体层的表面设置有三维金字塔状结构。 镜面层布置在整个这个有纹理的表面上。 在镜面层和导电性半导体层之间形成纹理反射面。

    Method for fabricating a plurality of electromagnetic radiation emitting semiconductor chips
    9.
    发明授权
    Method for fabricating a plurality of electromagnetic radiation emitting semiconductor chips 有权
    制造多个电磁辐射半导体芯片的方法

    公开(公告)号：US07655488B2

    公开(公告)日：2010-02-02

    申请号：US12290097

    申请日：2008-10-27

    申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

    发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

    IPC分类号： H01L21/00

    CPC分类号： H01L33/20 ,  H01L33/46

    摘要： Method for fabricating a semiconductor chip which emits electromagnetic radiation, wherein to improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack based on GaN, which comprises an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between these two semiconductor layers. The surface of the p-conducting semiconductor layer which faces away from the radiation-generating region is provided with three-dimensional pyramid-like structures. A mirror layer is arranged over the whole of this textured surface. A textured reflection surface is formed between the mirror layer and the p-conducting semiconductor layer.

    摘要翻译： 用于制造发射电磁辐射的半导体芯片的方法，其中为了提高发射电磁辐射的半导体芯片的光输出，纹理反射表面被集成在半导体芯片的p侧上。 半导体芯片具有基于GaN的外延生产的半导体层堆叠，其包括n导电半导体层，p导电半导体层和布置在这两个半导体层之间的电磁辐射产生区域。 面向辐射产生区域的p导电半导体层的表面设置有三维金字塔状结构。 镜面层布置在整个这个有纹理的表面上。 在镜面层和导电性半导体层之间形成纹理反射面。

    Electromagnetic radiation emitting semiconductor chip and procedure for its production
    10.
    发明授权
    Electromagnetic radiation emitting semiconductor chip and procedure for its production 有权
    电磁辐射发射半导体芯片及其生产程序

    公开(公告)号：US07442966B2

    公开(公告)日：2008-10-28

    申请号：US11585632

    申请日：2006-10-24

    申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

    发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/46

    摘要： A semiconductor chip which emits electromagnetic radiation is presented. The chip includes an epitaxially produced semiconductor layer stack based on nitride semiconductor material, which includes an n-conducting semiconductor layer, a p-conducting semiconductor layer, and an electromagnetic radiation generating region, which is arranged between these two semiconductor layers. The chip further includes a base on which the semiconductor layer stack is arranged, and a mirror layer, which is arranged between the semiconductor layer stack and the base. The n-conducting semiconductor layer faces away from the base, and the n-conducting semiconductor layer or an outcoupling layer located on the n-conducting semiconductor layer has a radiation-outcoupling surface which, in turn, includes planar outcoupling sub-surfaces, which are positioned obliquely with respect to a main plane of the radiation-generating region and each form an angle of between 15° and 70° with this plane.

    摘要翻译： 提出了发射电磁辐射的半导体芯片。 芯片包括基于氮化物半导体材料的外延生产的半导体层堆叠，其包括n导电半导体层，p导电半导体层和电磁辐射产生区域，其布置在这两个半导体层之间。 芯片还包括布置有半导体层堆叠的基底和布置在半导体层堆叠和基底之间的镜面层。 n导电半导体层背离基底，并且位于n导电半导体层上的n导电半导体层或输出耦合层具有辐射耦合表面，辐射输出耦合表面又包括平面输出耦合子表面，其中 相对于辐射产生区域的主平面倾斜地定位，并且每个与该平面形成15°至70°的角度。