摘要:
It is an object of the present invention to obtain a vacuum chucking which can vacuum suck a wafer even if dusts attach thereon. The main body of vacuum chuck (101) has a plurality of block grooves (125) on the surface on which the wafer (1) is sucked and fixed, in which vacuum evacuation paths (105) each for vacuum evacuating each block groove (125) are provided for each block groove (125). When the wafer (1) is sucked and fixed under low pressure, even if the degree of vacuum in one of the block grooves (125) decreases due to attachment of dusts on part of the suction surface, or the like, the wafer (1) can surely be sucked and held.
摘要:
It is an object of the present invention to obtain a vacuum chucking which can vacuum suck a wafer even if dusts attach thereon. The main body of vacuum chuck (101) has a plurality of block grooves (125) on the surface on which the wafer (1) is sucked and fixed, in which vacuum evacuation paths (105) each for vacuum evacuating each block groove (125) are provided for each block groove (125). When the wafer(1) is sucked and fixed under low pressure, even if the degree of vacuum in one of the block grooves (125) decreases due to attachment of dusts on part of the suction surface, or the like, the wafer (1) can surely be sucked and held.
摘要:
A semiconductor film production apparatus includes a reaction vessel for containing a substrate and including a gas supply port for supplying a reaction gas to the vessel, a gas discharge port for discharging the reaction gas from the vessel after reaction, and a light-transmitting glass window; a light source disposed outside the reaction vessel for irradiating a substrate in the reaction vessel through the light-transmitting glass window to heat the substrate; a cylindrical substrate holder disposed in the reaction vessel for holding the substrate with a first surface facing the light source and a second surface, opposed to the first surface, exposed to the reaction gas; a ring plate having a central opening with an area smaller than the substrate and an outside diameter dividing the reaction vessel into two compartments, the ring plate contacting the first surface of the substrate; a carrier gas supply port for introducing a carrier gas between the substrate and the light-transmitting glass window; and a reaction gas supply nozzle disposed in the substrate holder connected to said gas supply port and opposing the second surface of the substrate.
摘要:
A liquid crystal display device comprising a liquid crystal display panel and a light guide plate arranged in a rear side of the liquid crystal display panel. The liquid crystal display panel is of a substantially spherical shape, and the liquid crystal display panel is fitted at a front side of the light guide plate such that a proximity of a central portion of the liquid crystal display panel is outwardly bulged. There can be prevented display deficiencies (paddling) owing to interference between the liquid crystal display panel and the backlighting unit or between the former and the casing. Moreover, since no interference exists between the liquid crystal display panel and the backlighting unit or between the former and the casing, sheets such as the diffusing sheet will not be wrinkled, and the brightness of the backlighting unit can be maintained to be uniform.
摘要:
An inspection method and an inspection apparatus for the component members of the cathode-ray tube are disclosed. An inspection apparatus composed of normal members other than an object of inspection is prepared at the time of inspecting the phosphor screen of the screen panel, the electron gun or the shadow-mask constituting the cathode-ray tube. In advanced to assembling the cathode-ray tube, the object of inspection is mounted on the inspection apparatus, so that the conformance or rejection of the object of inspection is decided from the illuminated condition of the phosphor screen by irradiating electron beams thereon.
摘要:
An apparatus for manufacturing a liquid crystal panel in which two substrates are faced to each other with spacers interposed therebetween, applied with heat pressure in an overlapped condition, and adhesive arranged between the two substrates is cured for fixing, characterized in that at least of a pair of pressurizing plates for applying pressure to the two substrates is a graphite plate and in that upper and lower pressurizing plates are made to be of different rigidity. The graphite plate of low rigidity is made to stick to the substrate, and shifts between substrate can be prevented while securing uniformity in gap between substrates.
摘要:
An apparatus for manufacturing a liquid crystal panel in which two substrates are faced to each other with spacers interposed therebetween, applied with heat and pressure in an overlapped condition, and adhesive arranged between two substrates is cured for fixing, characterized in that at least one of a pair of pressurizing plates for applying pressure to the two substrates is a graphite plate and in that upper and lower pressurizing plates are made to be of different rigidity. The graphite plate of low rigidity is made to stick to the substrate, and shifts between substrates can be prevented while securing uniformity in gaps between substrates.
摘要:
An apparatus for forming a thin film on a substrate by bringing a first gas and a second gas into reaction with each other in a reaction chamber near the surface of the substrate in the reaction chamber. The apparatus has a plasma generating chamber disposed adjacent to the reaction chamber for generating a plasma of the first gas in a predetermined direction. A first gas inlet is provided at the boundary between the plasma generating chamber and the reaction chamber and formed to extend in the predetermined direction, while a second gas inlet is provided in the vicinity of the first gas inlet and extended in the predetermined direction. The apparatus further has a first gas supplying device for introducing the first gas into the plasma generating chamber and for introducing the first gas activated by a plasma in the plasma generating chamber into the reaction chamber through the first gas inlet, and second gas supplying device for supplying the second gas into the reaction chamber through the second gas inlet. A first flow settling device having plates disposed transverse to the flow of the first gas is positioned between the first gas inlet and plasma chamber. A second flow settling device may be located between the second gas supplying device and second gas inlet.
摘要:
With the prior art image-adjusting system for a liquid crystal display, flicker is adjusted by operator's visual examination and so human factors vary the potential-adjusting value applied to the common electrode. The invention provides an image-adjusting system and method free of this problem. The image-adjusting method starts with placing optical sensors opposite to a given location on a liquid crystal display. The output waveform from the optical sensors is observed on an oscilloscope in synchronism with the vertical synchronizing signal that is synchronized to odd frames or even frames. The potential applied to the common electrode of the liquid crystal display is shifted upward from the optimum potential to observe a first waveform. The potential on the common electrode is shifted downward from the optimum potential to observe a second waveform. The potential Vcom applied to a liquid crystal display to be adjusted is so adjusted that the waveform derived from the liquid crystal display to be adjusted has a phase midway between the phases of the previously obtained first and second waveforms.
摘要:
Apparatus for forming a thin film on a substrate surface by a CVD (Chemical Vapor Deposition) method which includes diffusing pipes for diffusing and supplying a first reactive gas, and uniformizing plates for supplying uniformly an active species formed through excitation of a second reactive gas. The first reactive gas and the active species are mixed uniformly with each other, and the resultant uniform mixture is supplied uniformly to the substrate surface, whereby a uniform film deposition rate is obtained in a reaction zone in which the thin film is formed, and a uniform thin film is formed over the entire substrate surface even when the area of the substrate surface is large.