Alloy casting apparatus
    1.
    发明授权
    Alloy casting apparatus 有权
    合金铸造设备

    公开(公告)号:US09427803B2

    公开(公告)日:2016-08-30

    申请号:US11661803

    申请日:2005-09-01

    CPC classification number: B22D23/006 B22D41/04

    Abstract: Apparatus for gravity flow and feeding of alloy in a casting operation has a supply vessel for holding a supply of alloy, a furnace in which the vessel is contained and in which the vessel is heatable to maintain the supply of alloy at suitable casting temperature, and a die mounted laterally outwardly from the vessel in relation to the furnace. A conduit provides communication between the vessel and the die. The apparatus further includes means for reversibly tilting an assembly including the furnace, the vessel and the die about a substantially horizontal axis to enable or prevent the flow of the alloy from the vessel to a die cavity defined by the die.

    Abstract translation: 用于铸造操作中的重力流动和合金进料的装置具有用于保持合金供应的供应容器,容纳容器的炉,容器可加热,以保持合适的合金在合适的铸造温度,以及 相对于炉子,从容器横向向外安装的模具。 导管提供容器和模具之间的连通。 该装置还包括用于可逆地倾斜包括炉子,容器和模具在内的大致水平轴线的组件的装置,以使合金从容器流动到由模具限定的模腔。

    Hermetic cap layers formed on low-κ films by plasma enhanced chemical vapor deposition
    4.
    发明授权
    Hermetic cap layers formed on low-κ films by plasma enhanced chemical vapor deposition 有权
    通过等离子体增强的化学气相沉积在低kappa膜上形成密封盖层

    公开(公告)号:US07399364B2

    公开(公告)日:2008-07-15

    申请号:US11423586

    申请日:2006-06-12

    Abstract: A method of forming a cap layer over a dielecrtic layer on a substrate including forming a plasma from a process gas including oxygen and tetraethoxysilane, and depositing the cap layer on the dielectric layer, where the cap layer comprises a thickness of about 600 Å or less, and a compressive stress of about 200 MPa or more. Also, a method of forming a cap layer over a dielectric layer on a substrate including forming a process gas by flowing together about 200 mgm to about 8000 mgm of tetraethoxysilane, about 2000 to about 20000 sccm of oxygen (O2), and about 2000 sccm to about 20000 sccm of carrier gas, generating a plasma from the process gas, where one or more RF generators supply about 50 watts to about 100 watts of low frequency RF power to the plasma, and about 100 watts to about 600 watts of high frequency RF power to the plasma, and depositing the cap layer on the dielectric layer.

    Abstract translation: 一种在衬底上的薄层上形成覆盖层的方法,包括由包括氧和四乙氧基硅烷的工艺气体形成等离子体,以及将所述覆盖层沉积在所述电介质层上,其中所述覆盖层包含约600或更小的厚度 ,压缩应力为200MPa以上。 另外,在衬底上的电介质层上形成覆盖层的方法,包括通过将约200mgm至约8000mgm的四乙氧基硅烷流动而形成工艺气体,约2000至约200sccm的氧(O 2) SUB>)和约2000sccm至约20000sccm的载气,从处理气体产生等离子体,其中一个或多个RF发生器为等离子体提供约50瓦到约100瓦的低频RF功率,并且约100 瓦特到等离子体的大约600瓦的高频RF功率,并且将覆盖层沉积在电介质层上。

    Network-on-Chip Dataflow Architecture
    5.
    发明申请
    Network-on-Chip Dataflow Architecture 失效
    网络片上数据流架构

    公开(公告)号:US20070266223A1

    公开(公告)日:2007-11-15

    申请号:US11382382

    申请日:2006-05-09

    Applicant: Tran Nguyen

    Inventor: Tran Nguyen

    CPC classification number: G06F9/3897 G06F9/38 G06F15/7825 Y02D10/12 Y02D10/13

    Abstract: With the development of microelectronic industry, we can integrate more and more transistors in a single chip. According to Moore's law, the number of transistors can double in 18 months. Therefore, our target is how to convert the number of transistors to the performance of microprocessors as well as DSPs. In fact, three common available architectures namely superscalar, VLIW, and chip-multiprocessor do not fulfill this requirement well. Hence, in this paper, we propose a totally new architecture which is absolutely scalable. That means the design task is very easy (we design only one processing element), we exploit the whole potential of the number of transistors (we replicate the processing element as many as possible), and the performance of the chip is extremely high (hundreds or thousands processing elements can run simultaneously). We call this new architecture is “Network on Chip Dataflow Architecture” because we combine the idea of dataflow computers from the 80s with state of the art Network on Chip to create a very powerful processing architecture.

    Abstract translation: 随着微电子行业的发展,我们可以在单芯片中集成越来越多的晶体管。 根据摩尔定律,晶体管数量可能在18个月内翻一番。 因此,我们的目标是如何将晶体管数量转换为微处理器以及DSP的性能。 事实上,三种常见的可用架构,即超标量,VLIW和芯片多处理器不能很好地满足这一要求。 因此,在本文中,我们提出了一种完全可扩展的全新架构。 这意味着设计任务非常简单(我们只设计一个处理元件),我们利用晶体管数量的全部潜力(尽可能多地复制处理元件),并且芯片的性能非常高(数百个 或数千个处理元素可以同时运行)。 我们称这种新架构是“网络片上数据流架构”,因为我们将来自80年代的数据流计算机的想法与最先进的片上网络相结合,以创建一个非常强大的处理架构。

    Additives to enhance phosphorus compound removal in refinery desalting processes
    6.
    发明申请
    Additives to enhance phosphorus compound removal in refinery desalting processes 有权
    炼油脱盐工艺中磷化合物去除添加剂的添加剂

    公开(公告)号:US20050241997A1

    公开(公告)日:2005-11-03

    申请号:US11177060

    申请日:2005-07-08

    Abstract: Reactive phosphorus species can be removed or transferred from a hydrocarbon phase to a water phase in an emulsion breaking process by using a composition that contains water-soluble hydroxyacids. Suitable water-soluble hydroxy-acids include, but are not necessarily limited to glycolic acid, gluconic acid, C2-C4 alpha-hydroxy acids, poly-hydroxy carboxylic acids, thioglycolic acid, chloroacetic acid, polymeric forms of the above hydroxyacids, poly-glycolic esters, glycolate ethers, and ammonium salt and alkali metal salts of these hydroxyacids, and mixtures thereof. The composition may optionally include a mineral acid to reduce the pH of the desalter wash water. A solvent may be optionally included in the composition. The invention permits transfer of reactive phosphorus species into the aqueous phase with little or no hydrocarbon phase undercarry into the aqueous phase. The composition is particularly useful in treating crude oil emulsions, and in removing calcium and other metals therefrom.

    Abstract translation: 活性磷物质可以通过使用含有水溶性羟基酸的组合物在乳液破乳过程中从烃相中去除或转移到水相中。 合适的水溶性羟基酸包括但不一定限于乙醇酸,葡萄糖酸,C 2 -C 4α-羟基酸,多羟基羧酸 ,巯基乙酸,氯乙酸,上述羟基酸的聚合形式,聚乙醇酸酯,乙醇酸醚,以及这些羟基酸的铵盐和碱金属盐,及其混合物。 组合物可以任选地包括无机酸以降低脱盐洗涤水的pH。 溶剂可以任选地包括在组合物中。 本发明允许将反应性磷物质转移到水相中,在水相中很少或没有烃相载体进入水相。 该组合物特别可用于处理原油乳液,以及从其中除去钙和其它金属。

    Pipe inspection system with selective image capture
    8.
    发明授权
    Pipe inspection system with selective image capture 有权
    具有选择性图像捕获的管道检查系统

    公开(公告)号:US09134255B1

    公开(公告)日:2015-09-15

    申请号:US13784783

    申请日:2013-03-04

    Abstract: Various pipe inspection systems include a camera head operatively connected to the distal end of a push-cable. Images may be automatically captured at predetermined distances of travel, or may be automatically captured based on the output signals from the auto-focus, auto-exposure and/or auto-white balance engines indicating, for example, that the camera motion within the pipe is substantially zero. Images may be captured in an automatic mode at predetermined intervals as the camera head travels within the pipe or in an override mode initiated by operator command. The system may include a data transmission circuit that transmits data between a plurality of nodes at a frequency that does not substantially interfere with a normal base band video transmission frequency.

    Abstract translation: 各种管道检查系统包括可操作地连接到推送电缆的远端的照相机头。 图像可以以预定的行进距离自动捕获,或者可以基于来自自动对焦,自动曝光和/或自动白平衡引擎的输出信号而被自动捕获,指示例如在管道内的相机运动 基本为零。 当照相机头在管道内行进或由操作员指令启动的超控模式时,图像可以以预定间隔以自动模式被捕获。 该系统可以包括数据传输电路,其以不基本上干扰正常基带视频传输频率的频率在多个节点之间传送数据。

    ORGANIC FIELD-EFFECT TRANSISTOR DEVICE
    9.
    发明申请
    ORGANIC FIELD-EFFECT TRANSISTOR DEVICE 审中-公开
    有机场效应晶体管器件

    公开(公告)号:US20130270533A1

    公开(公告)日:2013-10-17

    申请号:US13860876

    申请日:2013-04-11

    CPC classification number: H01L51/005 H01L51/0512 H01L51/052 H01L51/0558

    Abstract: The invention relates to a organic field effect transistor device comprising: an organic semiconductor layer; a source electrode arranged in electronic contact with the said organic semiconductor; a drain electrode arranged in electronic contact with the said organic semiconductor; a gate electrode; an electrolyte layer arranged between said gate electrode and said organic semiconductor layer; wherein the organic semiconductor layer comprises a semiconducting polymeric material comprising one or more blocks of conjugated polymer combined with one or more blocks of copolymer; preferably an amphiphilic copolymer. Also a method of producing the device, and a polyanionic polymer is provided by the invention.

    Abstract translation: 本发明涉及一种有机场效应晶体管器件,包括:有机半导体层; 与所述有机半导体电子接触地设置的源电极; 漏电极,与所述有机半导体电子接触; 栅电极; 布置在所述栅电极和所述有机半导体层之间的电解质层; 其中所述有机半导体层包括半导体聚合物材料,其包含一个或多个共轭聚合物嵌段与一个或多个共聚物嵌段组合; 优选两亲共聚物。 本发明也提供了该装置的制造方法和聚阴离子聚合物。

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