Abstract:
Apparatus for gravity flow and feeding of alloy in a casting operation has a supply vessel for holding a supply of alloy, a furnace in which the vessel is contained and in which the vessel is heatable to maintain the supply of alloy at suitable casting temperature, and a die mounted laterally outwardly from the vessel in relation to the furnace. A conduit provides communication between the vessel and the die. The apparatus further includes means for reversibly tilting an assembly including the furnace, the vessel and the die about a substantially horizontal axis to enable or prevent the flow of the alloy from the vessel to a die cavity defined by the die.
Abstract:
Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.
Abstract:
A method of forming a cap layer over a dielecrtic layer on a substrate including forming a plasma from a process gas including oxygen and tetraethoxysilane, and depositing the cap layer on the dielectric layer, where the cap layer comprises a thickness of about 600 Å or less, and a compressive stress of about 200 MPa or more. Also, a method of forming a cap layer over a dielectric layer on a substrate including forming a process gas by flowing together about 200 mgm to about 8000 mgm of tetraethoxysilane, about 2000 to about 20000 sccm of oxygen (O2), and about 2000 sccm to about 20000 sccm of carrier gas, generating a plasma from the process gas, where one or more RF generators supply about 50 watts to about 100 watts of low frequency RF power to the plasma, and about 100 watts to about 600 watts of high frequency RF power to the plasma, and depositing the cap layer on the dielectric layer.
Abstract:
With the development of microelectronic industry, we can integrate more and more transistors in a single chip. According to Moore's law, the number of transistors can double in 18 months. Therefore, our target is how to convert the number of transistors to the performance of microprocessors as well as DSPs. In fact, three common available architectures namely superscalar, VLIW, and chip-multiprocessor do not fulfill this requirement well. Hence, in this paper, we propose a totally new architecture which is absolutely scalable. That means the design task is very easy (we design only one processing element), we exploit the whole potential of the number of transistors (we replicate the processing element as many as possible), and the performance of the chip is extremely high (hundreds or thousands processing elements can run simultaneously). We call this new architecture is “Network on Chip Dataflow Architecture” because we combine the idea of dataflow computers from the 80s with state of the art Network on Chip to create a very powerful processing architecture.
Abstract:
Reactive phosphorus species can be removed or transferred from a hydrocarbon phase to a water phase in an emulsion breaking process by using a composition that contains water-soluble hydroxyacids. Suitable water-soluble hydroxy-acids include, but are not necessarily limited to glycolic acid, gluconic acid, C2-C4 alpha-hydroxy acids, poly-hydroxy carboxylic acids, thioglycolic acid, chloroacetic acid, polymeric forms of the above hydroxyacids, poly-glycolic esters, glycolate ethers, and ammonium salt and alkali metal salts of these hydroxyacids, and mixtures thereof. The composition may optionally include a mineral acid to reduce the pH of the desalter wash water. A solvent may be optionally included in the composition. The invention permits transfer of reactive phosphorus species into the aqueous phase with little or no hydrocarbon phase undercarry into the aqueous phase. The composition is particularly useful in treating crude oil emulsions, and in removing calcium and other metals therefrom.
Abstract:
The invention relates to a high-power tunable infrared source employing a four-photon mixing process, with three input lasers, in which process the output power is resonantly enhanced by exciton states in the conversion medium.
Abstract:
Various pipe inspection systems include a camera head operatively connected to the distal end of a push-cable. Images may be automatically captured at predetermined distances of travel, or may be automatically captured based on the output signals from the auto-focus, auto-exposure and/or auto-white balance engines indicating, for example, that the camera motion within the pipe is substantially zero. Images may be captured in an automatic mode at predetermined intervals as the camera head travels within the pipe or in an override mode initiated by operator command. The system may include a data transmission circuit that transmits data between a plurality of nodes at a frequency that does not substantially interfere with a normal base band video transmission frequency.
Abstract:
The invention relates to a organic field effect transistor device comprising: an organic semiconductor layer; a source electrode arranged in electronic contact with the said organic semiconductor; a drain electrode arranged in electronic contact with the said organic semiconductor; a gate electrode; an electrolyte layer arranged between said gate electrode and said organic semiconductor layer; wherein the organic semiconductor layer comprises a semiconducting polymeric material comprising one or more blocks of conjugated polymer combined with one or more blocks of copolymer; preferably an amphiphilic copolymer. Also a method of producing the device, and a polyanionic polymer is provided by the invention.
Abstract:
Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.