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    Projection exposure apparatus and method for operating the same
    2.
    发明授权
    Projection exposure apparatus and method for operating the same 有权
    投影曝光装置及其操作方法

    公开(公告)号：US07808615B2

    公开(公告)日：2010-10-05

    申请号：US11427183

    申请日：2006-06-28

    申请人： Toralf Gruner ,  Olaf Conradi ,  Nils Dieckmann ,  Markus Schwab ,  Olaf Dittmann ,  Michael Totzeck ,  Daniel Kraehmer ,  Vladimir Kamenov

    发明人： Toralf Gruner ,  Olaf Conradi ,  Nils Dieckmann ,  Markus Schwab ,  Olaf Dittmann ,  Michael Totzeck ,  Daniel Kraehmer ,  Vladimir Kamenov

    IPC分类号： G03B27/54 ,  G03B27/32

    CPC分类号： G03F7/70958 ,  G02B13/143 ,  G02B17/0856 ,  G02B17/0892 ,  G02B27/0012 ,  G03F7/70091

    摘要： The invention concerns a method for operating a projection exposure apparatus to project the image of a structure of an object (5) arranged in an object plane (6) onto a substrate (10) arranged in an image plane (8). The object (5) is illuminated with light of an operating wavelength of the projection exposure apparatus according to one of several adjustable exposure modes. The light produces changes in at least one optical element (9) of the projection exposure apparatus, by which the optical properties of the projection exposure apparatus are influenced. The operation of the projection exposure apparatus makes allowance for the influencing of the optical properties of the projection exposure apparatus or a quantity dependent on the former, being calculated approximately on the basis of the exposure mode used and the structure of the object (5).

    摘要翻译： 本发明涉及一种用于操作投影曝光装置以将布置在物平面（6）中的物体（5）的结构的图像投影到布置在图像平面（8）中的基板（10）上的方法。 根据多种可调曝光模式之一，物体（5）被投影曝光装置的工作波长的光照射。 该光在投影曝光装置的至少一个光学元件（9）中产生变化，由此影响投影曝光装置的光学特性。 投影曝光装置的操作允许基于所使用的曝光模式和对象（5）的结构大致计算投影曝光装置的光学特性或取决于前者的光学特性的影响。

    Method of optimizing an objective with fluoride crystal lenses, and objective with fluoride crystal lenses
    3.
    发明授权
    Method of optimizing an objective with fluoride crystal lenses, and objective with fluoride crystal lenses 失效
    氟化物晶体透镜优化目标的方法，以及氟化物晶体透镜的目标

    公开(公告)号：US07321465B2

    公开(公告)日：2008-01-22

    申请号：US11071699

    申请日：2005-03-02

    申请人： Michael Totzeck ,  Vladimir Kamenov ,  Toralf Gruner

    发明人： Michael Totzeck ,  Vladimir Kamenov ,  Toralf Gruner

    IPC分类号： G02B27/28

    CPC分类号： G02B1/08 ,  G02B1/02 ,  G02B5/3083 ,  G02B13/143 ,  G03F7/70241 ,  G03F7/705 ,  G03F7/70966 ,  Y10S359/90

    摘要： A numerical optimizing method serves to reduce harmful effects caused by intrinsic birefringence in lenses of a fluoride crystal material of cubic crystal structure in an objective, particularly a projection objective for a microlithography system. Under the optimizing method, an optimizing function which takes at least one birefringence-related image aberration into account is minimized. The birefringence-related image aberration is determined from a calculation for a light ray passing through the fluoride crystal lenses. To the extent that the birefringence-related image aberration is a function of parameters of the light ray, it depends only on geometric parameters of the light ray. The numerical optimizing method is used to produce objectives in which an optical retardation as well as an asymmetry of the optical retardation are corrected. The lenses are arranged in homogeneous groups, where each homogeneous group is corrected for the optical retardation asymmetry.

    摘要翻译： 数值优化方法用于减少物镜中的立方晶体结构的氟化物晶体材料的透镜中的固有双折射引起的有害影响，特别是微光刻系统的投影物镜。 在优化方法下，考虑到至少一个双折射相关图像像差的优化函数被最小化。 从通过氟化物晶体透镜的光线的计算确定双折射相关图像像差。 在双折射相关图像像差是光线参数的函数的程度上，其仅取决于光线的几何参数。 使用数值优化方法来产生其中光学延迟以及光学延迟的不对称性被校正的目标。 透镜被排列成均匀的组，其中每个均匀组被校正用于光学延迟不对称。

    PROJECTION EXPOSURE APPARATUS AND METHOD FOR OPERATING THE SAME
    4.
    发明申请
    PROJECTION EXPOSURE APPARATUS AND METHOD FOR OPERATING THE SAME 有权
    投影曝光装置及其操作方法

    公开(公告)号：US20080002167A1

    公开(公告)日：2008-01-03

    申请号：US11427183

    申请日：2006-06-28

    申请人： Toralf Gruner ,  Olaf Conradi ,  Nils Dieckmann ,  Markus Schwab ,  Olaf Hmann ,  Michael Totzeck ,  Daniel Kraehmer ,  Vladimir Kamenov

    发明人： Toralf Gruner ,  Olaf Conradi ,  Nils Dieckmann ,  Markus Schwab ,  Olaf Hmann ,  Michael Totzeck ,  Daniel Kraehmer ,  Vladimir Kamenov

    IPC分类号： G03B27/42 ,  G02B9/00

    CPC分类号： G03F7/70958 ,  G02B13/143 ,  G02B17/0856 ,  G02B17/0892 ,  G02B27/0012 ,  G03F7/70091

    摘要： The invention concerns a method for operating a projection exposure apparatus to project the image of a structure of an object (5) arranged in an object plane (6) onto a substrate (10) arranged in an image plane (8). The object (5) is illuminated with light of an operating wavelength of the projection exposure apparatus according to one of several adjustable exposure modes. The light produces changes in at least one optical element (9) of the projection exposure apparatus, by which the optical properties of the projection exposure apparatus are influenced. The operation of the projection exposure apparatus makes allowance for the influencing of the optical properties of the projection exposure apparatus or a quantity dependent on the former, being calculated approximately on the basis of the exposure mode used and the structure of the object (5).

    摘要翻译： 本发明涉及一种用于操作投影曝光装置以将布置在物平面（6）中的物体（5）的结构的图像投影到布置在图像平面（8）中的基板（10）上的方法。 根据多种可调曝光模式之一，物体（5）被投影曝光装置的工作波长的光照射。 该光在投影曝光装置的至少一个光学元件（9）中产生变化，由此影响投影曝光装置的光学特性。 投影曝光装置的操作允许基于所使用的曝光模式和对象（5）的结构大致计算投影曝光装置的光学特性或取决于前者的光学特性的影响。

    REFLECTIVE MASK FOR EUV LITHOGRAPHY
    5.
    发明申请
    REFLECTIVE MASK FOR EUV LITHOGRAPHY 有权
    反射掩码的EUV LITHOGRAPHY

    公开(公告)号：US20120320348A1

    公开(公告)日：2012-12-20

    申请号：US13526472

    申请日：2012-06-18

    申请人： Vladimir KAMENOV ,  Sascha MIGURA

    发明人： Vladimir KAMENOV ,  Sascha MIGURA

    IPC分类号： G03F1/24 ,  G03B27/32

    CPC分类号： G03F7/70316 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F7/70216

    摘要： To improve the mask of an EUV lithography apparatus in view of its high reflectivity, a reflective mask is suggested for EUV lithography having a reflective multilayer system on a substrate configured for a working wavelength in the EUV range and having stacks with layers of at least two materials with different real parts of the refractive index at the working wavelength, wherein the multilayer system (V) is configured such that, as it is irradiated with EUV radiation at a fixed wavelength and an angle interval between the smallest and the largest angle of incidence of up to 21°, the apodization is less than 30%.

    摘要翻译： 鉴于其高反射率，为了改进EUV光刻设备的掩模，建议用于EUV光刻的反射掩模，其在被配置用于EUV范围中的工作波长的衬底上具有反射多层系统，并且具有至少两层的层 在工作波长处具有不同实际折射率部分的材料，其中多层体系（V）被配置为使得当被固定波长的EUV辐射和最小和最大入射角之间的角度间隔照射时 高达21°，变迹小于30％。

    Method for improving the imaging properties of a projection objective for a microlithographic projection exposure apparatus
    9.
    发明授权
    Method for improving the imaging properties of a projection objective for a microlithographic projection exposure apparatus 有权
    用于改善微光刻投影曝光装置的投影物镜的成像特性的方法

    公开(公告)号：US07456933B2

    公开(公告)日：2008-11-25

    申请号：US11220643

    申请日：2005-09-08

    申请人： Ulrich Wegmann ,  Vladimir Kamenov ,  Thomas Muelders ,  Toralf Gruner ,  Markus Mengel

    发明人： Ulrich Wegmann ,  Vladimir Kamenov ,  Thomas Muelders ,  Toralf Gruner ,  Markus Mengel

    IPC分类号： G03B27/54 ,  G03B27/72

    CPC分类号： G03F7/706 ,  G03F7/701 ,  G03F7/70566 ,  G03F7/70591

    摘要： In a method for improving the imaging properties of a projection objective of a microlithographic projection exposure apparatus, an appropriate illumination angle distribution adapted to a mask (24; 224) to be projected is selected. Then locations (40a, 40b; 60a, 60b; 80a, 80b, 80c) in an exit pupil of the projection objective (20), which are illuminated under these conditions by projection light during a projection of the mask, are determined. For at least one image point, an actual value of an imaging quantity, e.g. a wavefront profile or a polarization state, is determined that influences the imaging properties of the projection objective. Finally, corrective measures are calculated such that the actual value of the imaging quantity approximates a desired value at these locations. In this last step, however, deviations of the actual value from the desired value are taken into account exclusively at said locations illuminated in the exit pupil.

    摘要翻译： 在用于改善微光刻投影曝光装置的投影物镜的成像特性的方法中，选择适于投影的掩模（24; 224）的适当的照明角度分布。 然后在投影物镜（20）的出射光瞳处的位置（40a，40b; 60a，60b; 80a，80b，80c）处， 面具，确定。 对于至少一个图像点，成像量的实际值，例如， 确定影响投影物镜的成像特性的波前轮廓或偏振状态。 最后，计算校正措施，使得成像量的实际值在这些位置处接近期望值。 然而，在最后一步中，实际值与期望值的偏差仅在出口光瞳上照亮的所述位置被考虑。

    Optical system of a projection exposure apparatus
    10.
    发明申请
    Optical system of a projection exposure apparatus 审中-公开
    投影曝光装置的光学系统

    公开(公告)号：US20060238735A1

    公开(公告)日：2006-10-26

    申请号：US11401505

    申请日：2006-04-10

    申请人： Vladimir Kamenov ,  Erwin Gaber ,  Daniel Kraehmer ,  Toralf Gruner

    发明人： Vladimir Kamenov ,  Erwin Gaber ,  Daniel Kraehmer ,  Toralf Gruner

    IPC分类号： G03B27/54

    CPC分类号： G03F7/70966 ,  G03F7/70191 ,  G03F7/70266 ,  G03F7/70308

    摘要： An optical system of a microlithographic exposure apparatus has a pupil plane, a field plane and at least one intrinsically birefringent optical element that is positioned in or in close proximity to the field plane. A force application unit exerts mechanical forces to a correction optical element, which is positioned in or in close proximity to the pupil plane. The forces cause stress that induces a birefringence in the correction optical element such that a retardance distribution in an exit pupil is at least substantially rotationally symmetrical. An optical surface may be aspherically deformed such that a wavefront error, which is as result of deformations caused by the application of forces, is at least substantially corrected.

    摘要翻译： 微光刻曝光设备的光学系统具有光瞳平面，场平面以及至少一个本征双折射光学元件，其位于或靠近场平面。 力施加单元对矫正光学元件施加机械力，校正光学元件位于或靠近瞳孔平面。 力引起在校正光学元件中引起双折射的应力，使得出射光瞳中的延迟分布至少基本上是旋转对称的。 光学表面可以被非球面变形，使得由于施加力而引起的变形的波前误差至少被基本上校正。