公开(公告)号：US20230215962A1

公开(公告)日：2023-07-06

申请号：US18113474

申请日：2023-02-23

Applicant: W&W Sens Devices, Inc.

Inventor： Shih-Yuan WANG ,  Shih-Ping WANG

IPC: H01L31/0352 ,  H01L27/144 ,  H01L31/105

CPC classification number: H01L31/035281 ,  H01L27/1446 ,  H01L31/105

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

公开(公告)号：US12087871B2

公开(公告)日：2024-09-10

申请号：US18385213

申请日：2023-10-30

Applicant: W&W Sens Devices, Inc.

Inventor： Shih-Yuan Wang ,  Shih-Ping Wang

IPC: H01L31/0236 ,  G02B6/122 ,  G02B6/136 ,  H01L23/66 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/024 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/054 ,  H01L31/0745 ,  H01L31/075 ,  H01L31/077 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18 ,  G02B6/12

CPC classification number: H01L31/035272 ,  G02B6/122 ,  G02B6/136 ,  H01L23/66 ,  H01L31/02005 ,  H01L31/02016 ,  H01L31/02019 ,  H01L31/022408 ,  H01L31/022475 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/024 ,  H01L31/028 ,  H01L31/0284 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/0312 ,  H01L31/035209 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/036 ,  H01L31/054 ,  H01L31/0745 ,  H01L31/075 ,  H01L31/077 ,  H01L31/105 ,  H01L31/1055 ,  H01L31/107 ,  H01L31/1075 ,  H01L31/1804 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/184 ,  H01L31/1844 ,  G02B2006/12097 ,  G02B2006/12176 ,  H01L2223/6627 ,  Y02E10/52 ,  Y02E10/548

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

公开(公告)号：US20240429332A1

公开(公告)日：2024-12-26

申请号：US18822880

申请日：2024-09-03

Applicant: W&W Sens Devices, Inc.

Inventor： Shih-Yuan WANG ,  Shih-Ping WANG

IPC: H01L31/0352 ,  G02B6/12 ,  G02B6/122 ,  G02B6/136 ,  H01L23/66 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/024 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/036 ,  H01L31/054 ,  H01L31/0745 ,  H01L31/075 ,  H01L31/077 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

公开(公告)号：US20240063317A1

公开(公告)日：2024-02-22

申请号：US18385213

申请日：2023-10-30

Applicant: W&W Sens Devices, Inc.

Inventor： Shih-Yuan WANG ,  Shih-Ping WANG

IPC: H01L31/0352 ,  H01L31/075 ,  H01L31/105 ,  G02B6/136 ,  H01L31/028 ,  H01L31/0224 ,  H01L31/0312 ,  H01L31/036 ,  H01L31/077 ,  H01L31/18 ,  H01L31/107 ,  H01L31/054 ,  G02B6/122 ,  H01L23/66 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/024 ,  H01L31/0304 ,  H01L31/0745

CPC classification number: H01L31/035272 ,  H01L31/035281 ,  H01L31/075 ,  H01L31/105 ,  G02B6/136 ,  H01L31/0284 ,  H01L31/035227 ,  H01L31/022475 ,  H01L31/035209 ,  H01L31/0312 ,  H01L31/036 ,  H01L31/077 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/1075 ,  H01L31/028 ,  H01L31/1055 ,  H01L31/107 ,  H01L31/054 ,  G02B6/122 ,  H01L23/66 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/024 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/02016 ,  G02B2006/12176

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.