公开(公告)号：US20050173803A1

公开(公告)日：2005-08-11

申请号：US10517575

申请日：2002-09-20

申请人： Victor Lu ,  Roger Leung ,  Wenya Fan ,  Ananth Naman ,  De-Ling Zhou

发明人： Victor Lu ,  Roger Leung ,  Wenya Fan ,  Ananth Naman ,  De-Ling Zhou

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/4763 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02362 ,  H01L21/314 ,  H01L21/31695 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to the production of multilayered dielectric structures and to semiconductor devices and integrated circuits comprising these structures. The structures of the invention are prepared by adhering a porous dielectric layer to a substantially nonporous capping layer via an intermediate adhesion promoting dielectric layer. A multilayered dielectric structure is prepared which has a porous dielectric layer which has a porosity of about 10% or more; b) an adhesion promoting dielectric layer on the porous dielectric layer which has a porosity of about 10% or less; and a substantially nonporous capping layer on the adhesion promoting dielectric layer.

摘要翻译： 本发明涉及多层电介质结构的制造以及包括这些结构的半导体器件和集成电路。 本发明的结构通过将多孔电介质层通过中间粘合促进介电层粘附到基本上无孔的覆盖层来制备。 制备多层电介质结构，其具有孔隙率为约10％以上的多孔介电层; b）多孔电介质层上的粘附促进介电层，其孔隙率为约10％或更小; 和在粘附促进电介质层上的基本上无孔的覆盖层。

公开(公告)号：US20060141641A1

公开(公告)日：2006-06-29

申请号：US10543347

申请日：2004-01-26

申请人： Wenya Fan ,  Victor Lu ,  Michael Thomas ,  Brian Daniels ,  Tiffany Nguyen ,  De-Ling Zhou ,  Ananth Naman ,  Lei Jin ,  Anil Bhanap

发明人： Wenya Fan ,  Victor Lu ,  Michael Thomas ,  Brian Daniels ,  Tiffany Nguyen ,  De-Ling Zhou ,  Ananth Naman ,  Lei Jin ,  Anil Bhanap

IPC分类号： H01L21/00 ,  H01L21/31

CPC分类号： H01L21/31058 ,  H01L21/3105 ,  H01L21/76801 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.

摘要翻译： 本文描述了修复材料中空隙的方法，其包括：a）提供具有多个反应性硅烷醇基团的材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 还描述了材料中碳修复的方法，其包括：a）提供具有多个反应性硅烷醇基团的缺碳材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 此外，本文描述了用于减少膜和/或碳缺乏膜的冷凝的方法，其包括：a）提供具有多个反应性硅烷醇基团的膜; b）将膜放入等离子体室中; c）将多个含反应性有机部分的硅烷引入所述室中; 和d）允许硅烷与至少一些反应性硅烷醇基团反应。 介质材料和低k介电材料在本文中描述，其包括：a）具有多个硅原子的无机材料; 和b）多个含有机部分的硅烷化合物，其中硅烷化合物通过至少一些硅原子与无机材料偶联。

公开(公告)号：US07915181B2

公开(公告)日：2011-03-29

申请号：US10543347

申请日：2004-01-26

申请人： Wenya Fan ,  Victor Lu ,  Michael Thomas ,  Brian Daniels ,  Tiffany Nguyen ,  De-Ling Zhou ,  Ananth Naman ,  Lei Jin ,  Anil Bhanap

发明人： Wenya Fan ,  Victor Lu ,  Michael Thomas ,  Brian Daniels ,  Tiffany Nguyen ,  De-Ling Zhou ,  Ananth Naman ,  Lei Jin ,  Anil Bhanap

IPC分类号： H01L21/31

CPC分类号： H01L21/31058 ,  H01L21/3105 ,  H01L21/76801 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.

摘要翻译： 本文描述了修复材料中空隙的方法，其包括：a）提供具有多个反应性硅烷醇基团的材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 还描述了材料中碳修复的方法，其包括：a）提供具有多个反应性硅烷醇基团的缺碳材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 此外，本文描述了用于减少膜和/或碳缺乏膜的冷凝的方法，其包括：a）提供具有多个反应性硅烷醇基团的膜; b）将膜放入等离子体室中; c）将多个含反应性有机部分的硅烷引入所述室中; 和d）允许硅烷与至少一些反应性硅烷醇基团反应。 介质材料和低k介电材料在本文中描述，其包括：a）具有多个硅原子的无机材料; 和b）多个含有机部分的硅烷化合物，其中硅烷化合物通过至少一些硅原子与无机材料偶联。

公开(公告)号：US20050239264A1

公开(公告)日：2005-10-27

申请号：US10829048

申请日：2004-04-21

申请人： Lei Jin ,  Victor Lu ,  Ananth Naman

发明人： Lei Jin ,  Victor Lu ,  Ananth Naman

IPC分类号： C23C18/12 ,  H01L21/00 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762

CPC分类号： H01L21/02211 ,  C23C18/06 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1254 ,  C23C18/1283 ,  H01L21/02318 ,  H01L21/316 ,  H01L21/76227

摘要： The invention relates to semiconductor device fabrication and more specifically to a method and material for forming of shallow trench isolation structures in integrated circuits. A silica dielectric film is formed by preparing a composition comprising a silicon containing pre-polymer, optionally water, and optionally a metal-ion-free catalyst selected from the group consisting of onium compounds and nucleophiles. The substrate is then coated with the composition to form a film. The film is then crosslinked to produce a gelled film. The gelled film is then heated at a temperature of from about 750° C. to about 1000° C. for a duration effective to remove substantially all organic moieties and to produce a substantially crack-free silica dielectric film.

摘要翻译： 本发明涉及半导体器件制造，更具体地涉及用于在集成电路中形成浅沟槽隔离结构的方法和材料。 通过制备包含含硅预聚物，任选的水和任选的选自鎓化合物和亲核试剂的金属离子的催化剂的组合物来形成二氧化硅介电膜。 然后用该组合物涂覆基材以形成膜。 然后将膜交联以产生凝胶膜。 然后将凝胶膜在约750℃至约1000℃的温度下加热，持续时间有效地除去基本上所有的有机部分并产生基本上无裂纹的二氧化硅介电膜。

公开(公告)号：US07153783B2

公开(公告)日：2006-12-26

申请号：US10886247

申请日：2004-07-07

申请人： Victor Lu ,  Lei Jin ,  Arlene J. Suedmeyer ,  Denis H. Endisch ,  Paul G. Apen ,  Brian J. Daniels ,  Deling Zhou ,  Ananth Naman

发明人： Victor Lu ,  Lei Jin ,  Arlene J. Suedmeyer ,  Denis H. Endisch ,  Paul G. Apen ,  Brian J. Daniels ,  Deling Zhou ,  Ananth Naman

IPC分类号： H01L21/31

CPC分类号： H01L21/02118 ,  H01L21/02318 ,  H01L21/3105 ,  H01L21/316

摘要： The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 Å/minute or less.

公开(公告)号：US20060008659A1

公开(公告)日：2006-01-12

申请号：US10886247

申请日：2004-07-07

申请人： Victor Lu ,  Lei Jin ,  Arlene Suedmeyer ,  Denis Endisch ,  Paul Apen ,  Brian Daniels ,  Deling Zhou ,  Ananth Naman

发明人： Victor Lu ,  Lei Jin ,  Arlene Suedmeyer ,  Denis Endisch ,  Paul Apen ,  Brian Daniels ,  Deling Zhou ,  Ananth Naman

IPC分类号： B32B13/04

CPC分类号： H01L21/02118 ,  H01L21/02318 ,  H01L21/3105 ,  H01L21/316

摘要： The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 Å/minute or less.

摘要翻译： 本发明涉及半导体器件制造，更具体地涉及一种用于在能够承受湿蚀刻处理的集成电路中形成高密度浅沟槽隔离结构的方法和材料。 在基板上形成石英电介质膜。 二氧化硅电介质膜的密度为约1.0至约2.3g / ml，SiC：SiO键比为约0.015或更大，介电常数为约4.0或更小，击穿电压为约2MV / cm以上 ，并且在100:1体积比的水和氟化氢的混合物中具有约30 /分钟或更少的湿蚀刻电阻。

公开(公告)号：US20060051929A1

公开(公告)日：2006-03-09

申请号：US10934068

申请日：2004-09-03

申请人： Lei Jin ,  Victor Lu ,  Wenya Fan ,  Paul Apen

发明人： Lei Jin ,  Victor Lu ,  Wenya Fan ,  Paul Apen

IPC分类号： H01L21/76

CPC分类号： H01L21/02129 ,  H01L21/0212 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76224

摘要： The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits having improved electrical properties. A silica dielectric film is formed on a substrate (a) preparing a composition comprising a silicon containing pre-polymer, a metal-ion-free catalyst, and optionally water; (b) coating a substrate with the composition to form a film, (c) crosslinking the composition by first heating the composition in a nitrogen atmosphere at a temperature of from about 750° C. to about 850° C. for from about 30 minutes to about 120 minutes; and thereafter heating the composition in an oxygen atmosphere at a temperature of from about 850° C. to about 1000° C. for from about 30 minutes to about 120 minutes, effective to produce a substantially crack-free, and substantially void-free silica dielectric film having a density of from about 1.8 to about 2.3 g/ml, a dielectric constant of about 4.0 or less, a breakdown voltage of about 3 MV/cm or more.

摘要翻译： 本发明涉及半导体器件制造，更具体地涉及在具有改进的电性能的集成电路中形成高密度浅沟槽隔离结构的方法和材料。 在基材（a）上形成二氧化硅电介质膜，制备包含含硅预聚物，不含金属离子的催化剂和任选的水的组合物; （b）用组合物涂覆基材以形成膜，（c）通过在氮气气氛中在约750℃至约850℃的温度下首先加热该组合物约30分钟来交联该组合物 至约120分钟; 然后在氧气氛中在约850℃至约1000℃的温度下加热组合物约30分钟至约120分钟，有效地产生基本上无裂纹且基本上无空隙的二氧化硅 绝缘膜的密度为约1.8至约2.3g / ml，介电常数为约4.0或更小，击穿电压为约3MV / cm以上。

公开(公告)号：US08992806B2

公开(公告)日：2015-03-31

申请号：US13217706

申请日：2011-08-25

申请人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Mark A. Fradkin ,  Makarem A. Hussein ,  Michael D. Goodner ,  Victor Lu ,  Roger Leung

发明人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Mark A. Fradkin ,  Makarem A. Hussein ,  Michael D. Goodner ,  Victor Lu ,  Roger Leung

IPC分类号： C09K3/00 ,  G03F7/11 ,  C09D183/04 ,  G03F7/075 ,  C09D183/08 ,  G03F7/09

CPC分类号： C09D183/04 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091

摘要： An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.

摘要翻译： 本文描述的吸收组合物包括至少一种无机基化合物，至少一种吸收化合物和至少一种材料改性剂。 此外，还描述了制备吸收组合物的方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂 形成反应混合物; 和b）使反应混合物在室温下形成吸收组合物。 制备吸收组合物的另一种方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂组合以形成反应混合物; 和b）加热反应混合物以形成吸收组合物。 描述了制备吸收组合物的另一种方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物，其中 至少一种材料改性剂包含至少一种酸和水; 和b）加热反应混合物以形成吸收材料，涂层或膜。 在制备本文所述的吸收组合物的其它方法中，这些方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物， 其中所述至少一种材料改性剂包含至少一种酸和水; 和b）使反应混合物形成吸收材料，涂层或膜。

公开(公告)号：US20120001135A1

公开(公告)日：2012-01-05

申请号：US13217706

申请日：2011-08-25

申请人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Mark A. Fradkin ,  Makarem A. Hussein ,  Michael D. Goodin ,  Victor Lu ,  Roger Leung

发明人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Mark A. Fradkin ,  Makarem A. Hussein ,  Michael D. Goodin ,  Victor Lu ,  Roger Leung

IPC分类号： C09K3/00

CPC分类号： C09D183/04 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091

摘要： An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.

摘要翻译： 本文描述的吸收组合物包括至少一种无机基化合物，至少一种吸收化合物和至少一种材料改性剂。 此外，还描述了制备吸收组合物的方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂 形成反应混合物; 和b）使反应混合物在室温下形成吸收组合物。 制备吸收组合物的另一种方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂组合以形成反应混合物; 和b）加热反应混合物以形成吸收组合物。 描述了制备吸收组合物的另一种方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物，其中 至少一种材料改性剂包含至少一种酸和水; 和b）加热反应混合物以形成吸收材料，涂层或膜。 在制备本文所述的吸收组合物的其它方法中，这些方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物， 其中所述至少一种材料改性剂包含至少一种酸和水; 和b）使反应混合物形成吸收材料，涂层或膜。

公开(公告)号：US20050171277A1

公开(公告)日：2005-08-04

申请号：US10717028

申请日：2003-11-18

申请人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Victor Lu ,  Roger Leung ,  Mark Fradkin ,  Makarem Hussein ,  Michael Goodner

发明人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Victor Lu ,  Roger Leung ,  Mark Fradkin ,  Makarem Hussein ,  Michael Goodner

IPC分类号： C08G20060101 ,  C08L83/04 ,  C09D183/04 ,  C09D183/08 ,  G03F7/09

CPC分类号： C09D183/04 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091

摘要： An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.

摘要翻译： 本文描述的吸收组合物包括至少一种无机基化合物，至少一种吸收化合物和至少一种材料改性剂。 此外，还描述了制备吸收组合物的方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂 形成反应混合物; 和b）使反应混合物在室温下形成吸收组合物。 制备吸收组合物的另一种方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂组合以形成反应混合物; 和b）加热反应混合物以形成吸收组合物。 描述了制备吸收组合物的另一种方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物，其中 至少一种材料改性剂包含至少一种酸和水; 和b）加热反应混合物以形成吸收材料，涂层或膜。 在制备本文所述的吸收组合物的其它方法中，这些方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物， 其中所述至少一种材料改性剂包含至少一种酸和水; 和b）使反应混合物形成吸收材料，涂层或膜。