公开(公告)号：US20120309130A1

公开(公告)日：2012-12-06

申请号：US13152021

申请日：2011-06-02

Applicant: Tze Yang Hin ,  Stefan Martens ,  Werner Simbuerger ,  Helmut Wietschorke ,  Horst Theuss ,  Beng Keh See ,  Ulrich Krumbein

Inventor： Tze Yang Hin ,  Stefan Martens ,  Werner Simbuerger ,  Helmut Wietschorke ,  Horst Theuss ,  Beng Keh See ,  Ulrich Krumbein

IPC: H01L21/56 ,  H01L21/77

CPC classification number: H01L21/6836 ,  H01L21/568 ,  H01L23/3114 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2221/68368 ,  H01L2221/68372 ,  H01L2224/03002 ,  H01L2224/03003 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16245 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2224/81 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2224/81203 ,  H01L2224/11 ,  H01L2924/00

Abstract: In one embodiment a method for manufacturing a semiconductor device comprises arranging a wafer on a carrier, the wafer comprising singulated chips; bonding the singulated chips to a support wafer, and removing the carrier.

Abstract translation: 在一个实施例中，制造半导体器件的方法包括将晶片布置在载体上，所述晶片包括单片化芯片; 将分割的芯片接合到支撑晶片，并移除载体。

公开(公告)号：US20080061886A1

公开(公告)日：2008-03-13

申请号：US11517782

申请日：2006-09-08

Applicant: Werner Simbuerger ,  Winfried Bakalski ,  Ronald Thuringer ,  Marc Jan Georges Tiebout

Inventor： Werner Simbuerger ,  Winfried Bakalski ,  Ronald Thuringer ,  Marc Jan Georges Tiebout

IPC: H03F3/68

CPC classification number: H03F1/223 ,  H03F1/0277 ,  H03F3/211 ,  H03F3/72

Abstract: A power amplifier comprises a control signal generator providing a first and a second signal, a first amplifier comprising a first transistor and a first cascode transistor for the amplification of the first signal, a second amplifier comprising a second transistor and a second cascode transistor for the amplification of the second signal, and an output coupler which couples an output of the first amplifier and an output of the second amplifier to an output terminal of the amplifier arrangement.

Abstract translation: 功率放大器包括提供第一和第二信号的控制信号发生器，包括用于放大第一信号的第一晶体管和第一共源共栅晶体管的第一放大器，包括第二晶体管和第二共源共栅晶体管的第二放大器， 放大第二信号，以及输出耦合器，其将第一放大器的输出和第二放大器的输出耦合到放大器装置的输出端。

公开(公告)号：US08535983B2

公开(公告)日：2013-09-17

申请号：US13152021

申请日：2011-06-02

Applicant: Tze Yang Hin ,  Stefan Martens ,  Werner Simbuerger ,  Helmut Wietschorke ,  Horst Theuss ,  Beng Keh See ,  Ulrich Krumbein

Inventor： Tze Yang Hin ,  Stefan Martens ,  Werner Simbuerger ,  Helmut Wietschorke ,  Horst Theuss ,  Beng Keh See ,  Ulrich Krumbein

IPC: H01L21/56

CPC classification number: H01L21/6836 ,  H01L21/568 ,  H01L23/3114 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2221/68368 ,  H01L2221/68372 ,  H01L2224/03002 ,  H01L2224/03003 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16245 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2224/81 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2224/81203 ,  H01L2224/11 ,  H01L2924/00

Abstract: In one embodiment a method for manufacturing a semiconductor device comprises arranging a wafer on a carrier, the wafer comprising singulated chips; bonding the singulated chips to a support wafer, and removing the carrier.

Abstract translation: 在一个实施例中，制造半导体器件的方法包括将晶片布置在载体上，所述晶片包括单片化芯片; 将分割的芯片接合到支撑晶片，并移除载体。

公开(公告)号：US20070026567A1

公开(公告)日：2007-02-01

申请号：US11421684

申请日：2006-06-01

Applicant: Gottfried Beer ,  Christoph Kienmayer ,  Klaus Pressel ,  Werner Simbuerger

Inventor： Gottfried Beer ,  Christoph Kienmayer ,  Klaus Pressel ,  Werner Simbuerger

IPC: H01L21/00

CPC classification number: H01L23/66 ,  G01S7/032 ,  G01S19/36 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/552 ,  H01L24/19 ,  H01L24/24 ,  H01L24/48 ,  H01L24/82 ,  H01L24/96 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/2402 ,  H01L2224/24137 ,  H01L2224/24226 ,  H01L2224/48091 ,  H01L2224/73253 ,  H01L2224/73267 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/1903 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01Q1/2283 ,  H01Q1/44 ,  H01Q9/0407 ,  H01Q9/0457 ,  H01Q19/00 ,  H01Q21/0087 ,  H01Q23/00 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor module (1) has components (6) for microwave engineering in a plastic casing (7). The semiconductor module (1) has a principal surface (8) with an upper side (9) of a plastic package molding compound (10) and at least one active upper side (11) of a semiconductor chip (12). Disposed on the principal surface (8) is a multilayered conductor track structure (13) which alternately comprises structured metal layers (14, 15) and structured insulation layers (16, 17), where at least one of the insulation layers (16, 17) and/or the plastic package molding compound (10) has at least one microwave insulation region.

Abstract translation: 半导体模块（1）在塑料外壳（7）中具有用于微波工程的部件（6）。 半导体模块（1）具有主表面（8），其具有塑料封装模制化合物（10）的上侧（9）和半导体芯片（12）的至少一个有源上侧面（11）。 设置在主表面（8）上的是多层导体轨道结构（13），其交替地包括结构化金属层（14,15）和结构化绝缘层（16,17），其中至少一个绝缘层（16,17） ）和/或塑料包装模塑料（10）具有至少一个微波绝缘区域。

公开(公告)号：US07863728B2

公开(公告)日：2011-01-04

申请号：US11869354

申请日：2007-10-09

Applicant: Gottfried Beer ,  Christoph Kienmayer ,  Klaus Pressel ,  Werner Simbuerger

Inventor： Gottfried Beer ,  Christoph Kienmayer ,  Klaus Pressel ,  Werner Simbuerger

IPC: H01L23/31 ,  H01L23/498 ,  H01L23/34

CPC classification number: H01L23/66 ,  G01S7/032 ,  G01S19/36 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/552 ,  H01L24/19 ,  H01L24/24 ,  H01L24/48 ,  H01L24/82 ,  H01L24/96 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/2402 ,  H01L2224/24137 ,  H01L2224/24226 ,  H01L2224/48091 ,  H01L2224/73253 ,  H01L2224/73267 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/1903 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01Q1/2283 ,  H01Q1/44 ,  H01Q9/0407 ,  H01Q9/0457 ,  H01Q19/00 ,  H01Q21/0087 ,  H01Q23/00 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor module includes components in a plastic casing. The semiconductor module includes a plastic package molding compound and a semiconductor chip. Also provided in the module are a first principal surface including an upper side of the plastic package molding compound and at least one active upper side of the semiconductor chip, a second principal surface including a back side of the plastic package molding compound, and a multilayered conductor track structure disposed on the first principal surface and a second metal layer disposed on the second principal surface.

Abstract translation: 半导体模块包括塑料外壳中的部件。 半导体模块包括塑料封装模塑料和半导体芯片。 还设置在模块中的是包括塑料封装模塑料的上侧和半导体芯片的至少一个活性上侧的第一主表面，包括塑料封装模塑料的背面的第二主表面和多层 导体轨道结构设置在第一主表面上，第二金属层设置在第二主表面上。

公开(公告)号：US20080105966A1

公开(公告)日：2008-05-08

申请号：US11869354

申请日：2007-10-09

Applicant: Gottfried Beer ,  Christoph Kienmayer ,  Klaus Pressel ,  Werner Simbuerger

Inventor： Gottfried Beer ,  Christoph Kienmayer ,  Klaus Pressel ,  Werner Simbuerger

IPC: H01L23/48 ,  H01L21/50

CPC classification number: H01L23/66 ,  G01S7/032 ,  G01S19/36 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/552 ,  H01L24/19 ,  H01L24/24 ,  H01L24/48 ,  H01L24/82 ,  H01L24/96 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/2402 ,  H01L2224/24137 ,  H01L2224/24226 ,  H01L2224/48091 ,  H01L2224/73253 ,  H01L2224/73267 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/1903 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01Q1/2283 ,  H01Q1/44 ,  H01Q9/0407 ,  H01Q9/0457 ,  H01Q19/00 ,  H01Q21/0087 ,  H01Q23/00 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor module includes components in a plastic casing. The semiconductor module includes a plastic package molding compound and a semiconductor chip. Also provided in the module are a first principal surface including an upper side of the plastic package molding compound and at least one active upper side of the semiconductor chip, a second principle surface including a back side of the plastic package molding compound, and a multilayered conductor track structure disposed on the first principal surface and a second metal layer disposed on the second principle surface.

Abstract translation: 半导体模块包括塑料外壳中的部件。 半导体模块包括塑料封装模塑料和半导体芯片。 模块中还设置有包括塑料封装模塑料的上侧和半导体芯片的至少一个活性上侧的第一主表面，包括塑料封装模塑料的背面的第二主表面和多层 导体轨道结构设置在第一主表面上，第二金属层设置在第二主表面上。

公开(公告)号：US07692588B2

公开(公告)日：2010-04-06

申请号：US11421684

申请日：2006-06-01

Applicant: Gottfried Beer ,  Christoph Kienmayer ,  Klaus Pressel ,  Werner Simbuerger

Inventor： Gottfried Beer ,  Christoph Kienmayer ,  Klaus Pressel ,  Werner Simbuerger

IPC: H01Q1/38 ,  H01Q15/08 ,  H01L23/48

CPC classification number: H01L23/66 ,  G01S7/032 ,  G01S19/36 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/552 ,  H01L24/19 ,  H01L24/24 ,  H01L24/48 ,  H01L24/82 ,  H01L24/96 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/2402 ,  H01L2224/24137 ,  H01L2224/24226 ,  H01L2224/48091 ,  H01L2224/73253 ,  H01L2224/73267 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/1903 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01Q1/2283 ,  H01Q1/44 ,  H01Q9/0407 ,  H01Q9/0457 ,  H01Q19/00 ,  H01Q21/0087 ,  H01Q23/00 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor module (1) has components (6) for microwave engineering in a plastic casing (7). The semiconductor module (1) has a principal surface (8) with an upper side (9) of a plastic package molding compound (10) and at least one active upper side (11) of a semiconductor chip (12). Disposed on the principal surface (8) is a multilayered conductor track structure (13) which alternately comprises structured metal layers (14, 15) and structured insulation layers (16, 17), where at least one of the insulation layers (16, 17) and/or the plastic package molding compound (10) has at least one microwave insulation region.

Abstract translation: 半导体模块（1）在塑料外壳（7）中具有用于微波工程的部件（6）。 半导体模块（1）具有主表面（8），其具有塑料封装模制化合物（10）的上侧（9）和半导体芯片（12）的至少一个有源上侧面（11）。 设置在主表面（8）上的是多层导体轨道结构（13），其交替地包括结构化金属层（14,15）和结构化绝缘层（16,17），其中至少一个绝缘层（16,17） ）和/或塑料包装模塑料（10）具有至少一个微波绝缘区域。

公开(公告)号：US07477105B2

公开(公告)日：2009-01-13

申请号：US11517782

申请日：2006-09-08

Applicant: Werner Simbuerger ,  Winfried Bakalski ,  Ronald Thüringer ,  Marc Jan Georges Tiebout

Inventor： Werner Simbuerger ,  Winfried Bakalski ,  Ronald Thüringer ,  Marc Jan Georges Tiebout

IPC: H03F3/68

CPC classification number: H03F1/223 ,  H03F1/0277 ,  H03F3/211 ,  H03F3/72

Abstract: A power amplifier comprises a control signal generator providing a first and a second signal, a first amplifier comprising a first transistor and a first cascode transistor for the amplification of the first signal, a second amplifier comprising a second transistor and a second cascode transistor for the amplification of the second signal, and an output coupler which couples an output of the first amplifier and an output of the second amplifier to an output terminal of the amplifier arrangement.

Abstract translation: 功率放大器包括提供第一和第二信号的控制信号发生器，包括用于放大第一信号的第一晶体管和第一共源共栅晶体管的第一放大器，包括第二晶体管和第二共源共栅晶体管的第二放大器， 放大第二信号，以及输出耦合器，其将第一放大器的输出和第二放大器的输出耦合到放大器装置的输出端。