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    METHOD FOR MANUFACTURING BATTERY PROTECTION DEVICE AND BATTERY PROTECTION DEVICE
    1.
    发明申请
    METHOD FOR MANUFACTURING BATTERY PROTECTION DEVICE AND BATTERY PROTECTION DEVICE 审中-公开
    用于制造电池保护装置和电池保护装置的方法

    公开(公告)号：US20160133911A1

    公开(公告)日：2016-05-12

    申请号：US14759197

    申请日：2014-03-28

    申请人： Young Dae KIM ,  TES CO., LTD

    发明人： Young Dae KIM

    IPC分类号： H01M2/34 ,  H05K3/46 ,  H05K3/40 ,  H05K1/14

    CPC分类号： H01M2/34 ,  H01M10/425 ,  H01M10/4257 ,  H01M2200/00 ,  H01M2200/10 ,  H01M2200/108 ,  H05K1/053 ,  H05K1/144 ,  H05K3/4038 ,  H05K3/46 ,  H05K3/4608 ,  H05K2201/041

    摘要： The present invention relates to a method for manufacturing a battery protection apparatus capable of reducing a defect rate and improving productivity by reducing work time and a battery protection apparatus. The method for manufacturing the battery protection apparatus, according to one aspect of the present invention, comprises the steps of: (a) preparing an upper PCB plate having a metallic thin film formed on an upper surface thereof, a lower PCB plate having a metallic thin film formed on a lower surface thereof, and a metal plate for a spacer having at least one side which protrudes toward lateral surfaces of the upper PCB plate and the lower PCB plate and has at least one insulation hole; (b) attaching the upper PCB plate and the lower PCB plate to each other in a state where the metal plate for the spacer is inserted; (c) forming circuit patterns on the upper PCB plate and the lower PCB plate; (d) forming a through-hole which is smaller than the insulation hole and penetrates the upper PCB plate and the lower PCB plate, and electrically connecting the upper PCB plate with the lower PCB plate through the through-hole; (e) forming an exposure hole at the upper PCB plate so as to expose the metal plate for the spacer, and electrically connecting the metal plate for the spacer with the upper PCB plate through the exposure hole; and (f) forming a vertical extension part and a horizontal extension part by bending a protrusion part of the metal plate for the spacer in two stages.

    摘要翻译： 电池保护装置的制造方法技术领域本发明涉及一种电池保护装置的制造方法，其能够通过减少工作时间来减少缺陷率并提高生产率和电池保护装置。 根据本发明的一个方面的用于制造电池保护装置的方法包括以下步骤：（a）制备具有形成在其上表面上的金属薄膜的上PCB板，具有金属 形成在其下表面上的薄膜和用于间隔物的金属板，具有至少一侧朝向上PCB板和下PCB板的侧表面突出并具有至少一个绝缘孔; （b）在插入用于间隔件的金属板的状态下将上PCB板和下PCB板彼此连接; （c）在上PCB板和下PCB板上形成电路图案; （d）形成比绝缘孔小的贯通孔，穿过上PCB板和下PCB板，并通过通孔将上PCB板与下PCB板电连接; （e）在上PCB板上形成曝光孔，露出用于间隔物的金属板，并通过曝光孔将间隔物用金属板与上PCB板电连接; 和（f）通过两个阶段弯曲用于间隔件的金属板的突出部分来形成垂直延伸部分和水平延伸部分。

    EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR
    2.
    发明申请
    EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR 审中-公开
    制造半导体设备

    公开(公告)号：US20140190410A1

    公开(公告)日：2014-07-10

    申请号：US14235896

    申请日：2012-07-31

    申请人： Young Dae Kim ,  Jun Jin Hyon ,  Sang Ho Woo ,  Seung Woo Shin ,  Hai Won Kim

    发明人： Young Dae Kim ,  Jun Jin Hyon ,  Sang Ho Woo ,  Seung Woo Shin ,  Hai Won Kim

    IPC分类号： C30B25/10

    CPC分类号： C30B25/10 ,  C30B25/08 ,  C30B29/06 ,  C30B35/00 ,  H01L21/02046 ,  H01L21/67178 ,  H01L21/67207 ,  H01L21/67757

    摘要： Provided is an equipment for manufacturing a semiconductor. The equipment for manufacturing a semiconductor includes a cleaning chamber in which a cleaning process is performed on substrates, an epitaxial chamber in which an epitaxial process for forming an epitaxial layer on each of the substrates is performed, and a transfer chamber to which the cleaning chamber and the epitaxial chamber are connected to sides surfaces thereof, the transfer chamber including a substrate handler for transferring the substrates, on which the cleaning process is completed, into the epitaxial chamber.

    摘要翻译： 提供了一种用于制造半导体的设备。 用于制造半导体的设备包括其中对基板进行清洁处理的清洁室，其中执行在每个基板上形成外延层的外延工艺的外延室，以及清洁室 并且外延室连接到其侧表面，转移室包括用于将完成清洁处理的基板转移到外延室中的基板处理器。

    Hydrogen generating apparatus using steam reforming reaction
    3.
    发明授权
    Hydrogen generating apparatus using steam reforming reaction 有权
    使用蒸汽重整反应的氢发生装置

    公开(公告)号：US08617266B2

    公开(公告)日：2013-12-31

    申请号：US12734446

    申请日：2008-10-21

    申请人： Jin Hwan Bang ,  Young Dae Kim ,  Myung Jun Kim

    发明人： Jin Hwan Bang ,  Young Dae Kim ,  Myung Jun Kim

    IPC分类号： C01B3/02 ,  C01B3/36 ,  B01J7/00

    CPC分类号： C01B3/384 ,  B01J8/025 ,  B01J8/0257 ,  B01J8/062 ,  B01J2208/00495 ,  B01J2208/00504 ,  B01J2208/00539 ,  C01B2203/0233 ,  C01B2203/0816 ,  C01B2203/1235 ,  C01B2203/1628 ,  C01B2203/1633

    摘要： Disclosed herein is a hydrogen generating apparatus for producing hydrogen from a hydrocarbon feed through a steam reforming reaction, in which a pressure drop device is installed between a feed distributor and each of reactor tubes in order to prevent the feed from being unevenly distributed to the reactor tubes. In the hydrogen generating apparatus, the pressure drop device for artificially dropping the supply pressure of the feed is installed between the feed distributor and each of the reactor tubes which are concentrically arranged with respect to a heat source. Accordingly, if the feed is unevenly distributed, the pressure drop device can suppress an abnormal temperature rise in some of the reactor tubes to induce the smooth production of hydrogen and to greatly improve the operational safety of the hydrogen generating apparatus.

    摘要翻译： 本文公开了一种用于通过蒸汽重整反应从烃进料产生氢气的氢气生成装置，其中在进料分配器和每个反应器管之间安装压降装置，以防止进料不均匀地分布到反应器 管。 在氢生成装置中，用于人为地降低进料供给压力的压降装置安装在进料分配器和相对于热源同心布置的每个反应器管之间。 因此，如果进料分布不均匀，则压降装置可以抑制一些反应器管中的异常升温，引起氢气的平稳生产并大大提高氢气发生装置的操作安全性。

    Organic Light-Emitting Display Apparatus and Method of Manufacturing the Same
    5.
    发明申请
    Organic Light-Emitting Display Apparatus and Method of Manufacturing the Same 有权
    有机发光显示装置及其制造方法

    公开(公告)号：US20120292621A1

    公开(公告)日：2012-11-22

    申请号：US13238928

    申请日：2011-09-21

    申请人： Jong-Yun Kim ,  Il-Jeong Lee ,  Young-Dae Kim

    发明人： Jong-Yun Kim ,  Il-Jeong Lee ,  Young-Dae Kim

    IPC分类号： H01L51/10 ,  H01L51/56

    CPC分类号： H01L27/3258 ,  H01L27/3223 ,  H01L27/3246

    摘要： An organic light-emitting display apparatus may include: a planarization layer disposed on a substrate and covering a plurality of thin film transistors; pixel electrodes, each comprising a light emission portion and anon-light emission portion, the light emission portion being arranged on the planarization layer in a first grid pattern; via-holes, each connecting one thin film transistor and one pixel electrode through the planarization layer, and arranged in a second grid pattern offset from the first grid pattern; dummy via-holes spaced apart from the via-holes; a pixel-defining layer (PDL) disposed on the planarization layer and covering the via-holes, the dummy via-holes, and the non-light emission portion of the pixel electrodes; an organic layer disposed on the light emission portion and comprising an emissive layer; and an opposite electrode disposed on the organic layer.

    摘要翻译： 有机发光显示装置可以包括：设置在基板上并覆盖多个薄膜晶体管的平坦化层; 每个像素电极包括发光部分和阴极发射部分，所述发光部分以第一格子图案布置在所述平坦化层上; 通孔，每个通过所述平坦化层连接一个薄膜晶体管和一个像素电极，并且以与所述第一格栅图案偏移的第二格栅图案布置; 与通孔间隔开的虚拟通孔; 设置在平坦化层上并覆盖像素电极的通孔，虚拟通孔和非发光部分的像素限定层（PDL）; 设置在所述发光部分上并包括发光层的有机层; 以及设置在有机层上的相对电极。

    Method for fabricating capacitor utilizes a sacrificial pattern enclosing the upper outer walls of the storage nodes
    8.
    发明授权
    Method for fabricating capacitor utilizes a sacrificial pattern enclosing the upper outer walls of the storage nodes 失效
    用于制造电容器的方法利用包围存储节点的上外壁的牺牲图案

    公开(公告)号：US08048757B2

    公开(公告)日：2011-11-01

    申请号：US13069290

    申请日：2011-03-22

    申请人： Jae-Sung Roh ,  Kee-Jeung Lee ,  Han-Sang Song ,  Seung-Jin Yeom ,  Deok-Sin Kil ,  Young-Dae Kim ,  Jin-Hyock Kim

    发明人： Jae-Sung Roh ,  Kee-Jeung Lee ,  Han-Sang Song ,  Seung-Jin Yeom ,  Deok-Sin Kil ,  Young-Dae Kim ,  Jin-Hyock Kim

    IPC分类号： H01L21/20

    CPC分类号： H01L28/91 ,  H01L27/10852 ,  H01L28/65

    摘要： A method for fabricating a capacitor includes forming an isolation layer over a cell region and a peripheral region of a substrate. The isolation layer forms a plurality of open regions in the cell region. Storage nodes are formed on surfaces of the open regions. An upper portion of the isolation layer is etched to expose upper outer walls of the storage nodes. A sacrificial pattern is formed over the isolation layer to enclose the upper outer walls of the storage nodes. The isolation layer in the peripheral region is etched to expose side portions of the resulting structure obtained after forming the sacrificial pattern in the cell region. With the sacrificial pattern supporting the storage nodes, the isolation layer in the cell region is removed. The sacrificial pattern is then removed.

    摘要翻译： 制造电容器的方法包括在衬底的单元区域和周边区域上形成隔离层。 隔离层在单元区域中形成多个开放区域。 存储节点形成在开放区域的表面上。 蚀刻隔离层的上部以露出存储节点的上部外壁。 在隔离层上形成牺牲图案以封闭存储节点的上外壁。 对外围区域中的隔离层进行蚀刻，以在单元区域中形成牺牲图案之后获得的所得结构的侧面露出。 利用支持存储节点的牺牲图案，移除单元区域中的隔离层。 然后去除牺牲图案。

    METHOD FOR FABRICATING CAPACITOR
    9.
    发明申请
    METHOD FOR FABRICATING CAPACITOR 失效
    电容器制作方法

    公开(公告)号：US20110171807A1

    公开(公告)日：2011-07-14

    申请号：US13069290

    申请日：2011-03-22

    申请人： Jae-Sung Roh ,  Kee-Jeung Lee ,  Han-Sang Song ,  Seung-Jin Yeom ,  Deok-Sin Kil ,  Young-Dae Kim ,  Jin-Hyock Kim

    发明人： Jae-Sung Roh ,  Kee-Jeung Lee ,  Han-Sang Song ,  Seung-Jin Yeom ,  Deok-Sin Kil ,  Young-Dae Kim ,  Jin-Hyock Kim

    IPC分类号： H01L21/02

    CPC分类号： H01L28/91 ,  H01L27/10852 ,  H01L28/65

    摘要： A method for fabricating a capacitor includes forming an isolation layer over a cell region and a peripheral region of a substrate. The isolation layer forms a plurality of open regions in the cell region. Storage nodes are formed on surfaces of the open regions. An upper portion of the isolation layer is etched to expose upper outer walls of the storage nodes. A sacrificial pattern is formed over the isolation layer to enclose the upper outer walls of the storage nodes. The isolation layer in the peripheral region is etched to expose side portions of the resulting structure obtained after forming the sacrificial pattern in the cell region. With the sacrificial pattern supporting the storage nodes, the isolation layer in the cell region is removed. The sacrificial pattern is then removed.

    摘要翻译： 制造电容器的方法包括在衬底的单元区域和周边区域上形成隔离层。 隔离层在单元区域中形成多个开放区域。 存储节点形成在开放区域的表面上。 蚀刻隔离层的上部以露出存储节点的上部外壁。 在隔离层上形成牺牲图案以封闭存储节点的上外壁。 对外围区域中的隔离层进行蚀刻，以在单元区域中形成牺牲图案之后获得的所得结构的侧面露出。 利用支持存储节点的牺牲图案，移除单元区域中的隔离层。 然后去除牺牲图案。