公开(公告)号：US20090146161A1

公开(公告)日：2009-06-11

申请号：US12300306

申请日：2007-05-08

申请人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

发明人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

IPC分类号： H01L29/205 ,  H01L21/20 ,  H01L33/00

CPC分类号： C23C16/303 ,  C23C16/0272 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2.

摘要翻译： 本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。 本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层包含具有确定的晶体界面的柱状晶体，并且柱状晶体密度为1×10 3〜1×10 5个晶体/ m 2。

公开(公告)号：US08148712B2

公开(公告)日：2012-04-03

申请号：US12300306

申请日：2007-05-08

申请人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

发明人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

IPC分类号： H01L29/06

CPC分类号： C23C16/303 ,  C23C16/0272 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2.

摘要翻译： 本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。 本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层含有具有确定的结晶界面的柱状晶体，柱状晶体密度为1×10 3〜1×10 5个晶体/μm2。

公开(公告)号：US08802187B2

公开(公告)日：2014-08-12

申请号：US12820892

申请日：2010-06-22

申请人： Yoshiaki Ikenoue ,  Hisayuki Miki ,  Kenzo Hanawa ,  Yasumasa Sasaki ,  Hitoshi Yokouchi ,  Ryoko Konta ,  Hiroaki Kaji

发明人： Yoshiaki Ikenoue ,  Hisayuki Miki ,  Kenzo Hanawa ,  Yasumasa Sasaki ,  Hitoshi Yokouchi ,  Ryoko Konta ,  Hiroaki Kaji

IPC分类号： H01L21/203 ,  H01L51/00

CPC分类号： H01L51/0008 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/022425 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

摘要： The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.

摘要翻译： 本发明提供一种太阳能电池的制造方法，其特征在于，使用溅射法在基板上形成由III族氮化物半导体构成的缓冲层，在所述缓冲层上形成III族氮化物半导体层和电极。 III族氮化物半导体层通过选自溅射法，MOCVD法，MBE法，CBE法和MLE法中的至少一种形成在缓冲层上，电极形成在 III族氮化物半导体层。

公开(公告)号：US20100261308A1

公开(公告)日：2010-10-14

申请号：US12820892

申请日：2010-06-22

申请人： Yoshiaki IKENOUE ,  Hisayuki Miki ,  Kenzo Hanawa ,  Yasumasa Sasaki ,  Hitoshi Yokouchi ,  Ryoko Konta ,  Hiroaki Kaji

发明人： Yoshiaki IKENOUE ,  Hisayuki Miki ,  Kenzo Hanawa ,  Yasumasa Sasaki ,  Hitoshi Yokouchi ,  Ryoko Konta ,  Hiroaki Kaji

IPC分类号： H01L31/18

CPC分类号： H01L51/0008 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/022425 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

摘要： The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.

摘要翻译： 本发明提供一种太阳能电池的制造方法，其特征在于，使用溅射法在基板上形成由III族氮化物半导体构成的缓冲层，在所述缓冲层上形成III族氮化物半导体层和电极。 III族氮化物半导体层通过选自溅射法，MOCVD法，MBE法，CBE法和MLE法中的至少一种形成在缓冲层上，电极形成在 III族氮化物半导体层。

公开(公告)号：US20080223434A1

公开(公告)日：2008-09-18

申请号：US12033603

申请日：2008-02-19

申请人： Yoshiaki Ikenoue ,  Hisayuki Miki ,  Kenzo Hanawa ,  Yasumasa Sasaki ,  Hitoshi Yokouchi ,  Ryoko Konta ,  Hiroaki Kaji

发明人： Yoshiaki Ikenoue ,  Hisayuki Miki ,  Kenzo Hanawa ,  Yasumasa Sasaki ,  Hitoshi Yokouchi ,  Ryoko Konta ,  Hiroaki Kaji

IPC分类号： H01L31/06 ,  H01L31/0264 ,  H01L31/18

CPC分类号： H01L51/0008 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/022425 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

摘要： The present invention provides a solar cell that is useful for industry and has high photoelectric conversion efficiency and a method of manufacturing the same. A solar cell according to an aspect of the invention includes: a substrate; a buffer layer that is formed on the substrate and is composed of a group-III nitride semiconductor; and a group-III nitride semiconductor layer (p-type layer/an n-type layer) that has a p-n junction therein and is formed on the buffer layer. At least one of the buffer layer and the group-III nitride semiconductor layer having the p-n junction therein has a compound semiconductor layer formed by a sputtering method.

摘要翻译： 本发明提供了一种对工业有用并具有高光电转换效率的太阳能电池及其制造方法。 根据本发明的一个方面的太阳能电池包括：基板; 形成在基板上并由III族氮化物半导体构成的缓冲层; 以及在缓冲层上形成有p-n结的III族氮化物半导体层（p型层/ n型层）。 具有p-n结的缓冲层和III-III族氮化物半导体层中的至少一个具有通过溅射法形成的化合物半导体层。

公开(公告)号：US20090205707A1

公开(公告)日：2009-08-20

申请号：US12388145

申请日：2009-02-18

申请人： Yoshiaki IKENOUE ,  Naoki Fukunaga ,  Hironao Shinohara ,  Hisayuki Miki ,  Kenzo Hanawa ,  Hiroaki Kaji ,  Hitoshi Yokouchi ,  Ryoko Konta

发明人： Yoshiaki IKENOUE ,  Naoki Fukunaga ,  Hironao Shinohara ,  Hisayuki Miki ,  Kenzo Hanawa ,  Hiroaki Kaji ,  Hitoshi Yokouchi ,  Ryoko Konta

IPC分类号： H01L31/00 ,  H01L21/306

CPC分类号： H01L31/022466 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/1852 ,  H01L31/186 ,  H01L31/1884 ,  Y02E10/544 ,  Y02P70/521

摘要： The object of the present invention is to provide a solar cell which is industrially beneficial and has high light conversion efficiency; and a method for producing a solar cell; and the present invention provides a solar cell comprising a substrate, a power generation layer for converting received light into electrical power, a translucent electrode, and another electrode, when light travels through each member from a first surface thereof, a surface opposite to the first surface is defined as a second surface, the power generation layer is formed at a second surface side of the substrate, the translucent electrode is formed on one surface of the power generation layer, and another electrode is formed on the other surface of the power generation layer, wherein the translucent electrode comprises hexagonal In2O3 crystal.

摘要翻译： 本发明的目的是提供一种在工业上有益且具有高的光转换效率的太阳能电池; 以及太阳能电池的制造方法。 并且本发明提供了一种太阳能电池，其包括基板，用于将接收的光转换为电力的发电层，透光性电极和另一电极，当光从其第一表面穿过各构件时，与第一 表面被定义为第二表面，发电层形成在基板的第二表面侧，透光性电极形成在发电层的一个表面上，另一个电极形成在发电的另一个表面上 层，其中所述透光性电极包含六方晶In2O3晶体。

公开(公告)号：US20090194784A1

公开(公告)日：2009-08-06

申请号：US12306609

申请日：2008-01-15

申请人： Hiroaki Kaji ,  Yasunori Yokoyama ,  Hiromitsu Sakai

发明人： Hiroaki Kaji ,  Yasunori Yokoyama ,  Hiromitsu Sakai

IPC分类号： H01L33/00 ,  H01L29/205 ,  H01L29/20 ,  H01L21/20

CPC分类号： C23C16/34 ,  B82Y20/00 ,  C23C14/0617 ,  C23C14/0641 ,  C23C16/303 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/34333 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A group-III nitride compound semiconductor device of the present invention comprises a substrate, an intermediate layer provided on the substrate, and a base layer provided on the intermediate layer in which a full width at half maximum in rocking curve of a (0002) plane is 100 arcsec or lower and a full width at half maximum in rocking curve of a (10-10) plane is 300 arcsec or lower. Also, a production method of a group-III nitride compound semiconductor device of the present invention comprises forming the intermediate layer by using a sputtering method.

摘要翻译： 本发明的III族氮化物化合物半导体器件包括衬底，设置在衬底上的中间层和设置在中间层上的基底层，其中在（0002）平面的摇摆曲线中半高的全宽度 （10-10）平面的摆动曲线为100弧度以下，半高的全宽为300弧度以下。 此外，本发明的III族氮化物化合物半导体器件的制造方法包括使用溅射法形成中间层。

公开(公告)号：US08674398B2

公开(公告)日：2014-03-18

申请号：US12666594

申请日：2008-07-03

申请人： Hiroaki Kaji ,  Hisayuki Miki

发明人： Hiroaki Kaji ,  Hisayuki Miki

IPC分类号： H01L33/30

CPC分类号： H01L21/02658 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/025 ,  H01L33/12 ,  H01L33/16 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/181 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/173 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： There are provided a group III nitride semiconductor light emitting device which is constituted of a substrate, an intermediate layer formed thereon having a favorable level of orientation properties, and a group III nitride semiconductor formed thereon having a favorable level of crystallinity, and having excellent levels of light emitting properties and productivity; a production method thereof; and a lamp, the group III nitride semiconductor light emitting device configured so that at least an intermediate layer 12 composed of a group III nitride compound is laminated on a substrate 11, and an n-type semiconductor layer 14 having a base layer 14a, a light emitting layer 15 and a p-type semiconductor layer 16 are sequentially laminated on the intermediate layer 12, wherein when components are separated, based on a peak separation technique using an X-ray rocking curve of the intermediate layer 12, into a broad component having the full width at half maximum of 720 arcsec or more and a narrow component, a non-orientating component that corresponds to the broad component is included in a crystal organization of the intermediate layer 12, and a proportion of the non-orientating component within the crystal organization of the intermediate layer 12 is 30% or less in terms of an area ratio of the intermediate layer 12.

摘要翻译： 提供了一种III族氮化物半导体发光器件，其由基板，其上形成的具有良好取向性能的中间层和在其上形成的具有良好结晶度的III族氮化物半导体构成，并且具有优异的等级 的发光性能和生产率; 其制造方法; 以及灯，所述III族氮化物半导体发光器件被配置为使得至少由III族氮化物化合物构成的中间层12层压在基板11上，并且n型半导体层14具有基极层14a， 发光层15和p型半导体层16依次层叠在中间层12上，其中当将元件分离时，基于使用中间层12的X射线摇摆曲线的峰值分离技术，形成宽分量 具有720秒或更大的半高全宽和窄分量，对应于宽分量的非取向组分包括在中间层12的晶体组织中，并且非取向组分的比例在 中间层12的晶体结构以中间层12的面积比计为30％以下。

公开(公告)号：US20100327311A1

公开(公告)日：2010-12-30

申请号：US12666594

申请日：2008-07-03

申请人： Hiroaki Kaji ,  Hisayuki Miki

发明人： Hiroaki Kaji ,  Hisayuki Miki

IPC分类号： H01L33/30 ,  H01L33/32

CPC分类号： H01L21/02658 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/025 ,  H01L33/12 ,  H01L33/16 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/181 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/173 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： There are provided a group III nitride semiconductor light emitting device which is constituted of a substrate, an intermediate layer formed thereon having a favorable level of orientation properties, and a group III nitride semiconductor formed thereon having a favorable level of crystallinity, and having excellent levels of light emitting properties and productivity; a production method thereof; and a lamp, the group III nitride semiconductor light emitting device configured so that at least an intermediate layer 12 composed of a group III nitride compound is laminated on a substrate 11, and an n-type semiconductor layer 14 having a base layer 14a, a light emitting layer 15 and a p-type semiconductor layer 16 are sequentially laminated on the intermediate layer 12, wherein when components are separated, based on a peak separation technique using an X-ray rocking curve of the intermediate layer 12, into a broad component having the full width at half maximum of 720 arcsec or more and a narrow component, a non-orientating component that corresponds to the broad component is included in a crystal organization of the intermediate layer 12, and a proportion of the non-orientating component within the crystal organization of the intermediate layer 12 is 30% or less in terms of an area ratio of the intermediate layer 12.

摘要翻译： 提供了一种III族氮化物半导体发光器件，其由基板，其上形成的具有良好取向性能的中间层和在其上形成的具有良好结晶度的III族氮化物半导体构成，并且具有优异的等级 的发光性能和生产率; 其制造方法; 以及灯，所述III族氮化物半导体发光器件被配置为使得至少由III族氮化物化合物构成的中间层12层压在基板11上，并且n型半导体层14具有基极层14a， 发光层15和p型半导体层16依次层叠在中间层12上，其中当将元件分离时，基于使用中间层12的X射线摇摆曲线的峰值分离技术，形成宽分量 具有720秒或更大的半高全宽和窄分量，对应于宽分量的非取向组分包括在中间层12的晶体组织中，并且非取向组分的比例在 中间层12的晶体结构以中间层12的面积比计为30％以下。

公开(公告)号：US06390229B1

公开(公告)日：2002-05-21

申请号：US09599006

申请日：2000-06-22

申请人： Hiroaki Kaji

发明人： Hiroaki Kaji

IPC分类号： B62D506

CPC分类号： B62D5/0463

摘要： An electric power steering system is provided, which employs an electric motor as a drive source to apply a steering assist force to a steering mechanism mounted on a motor vehicle in accordance with the operation of an operation member. The electric power steering system includes: a torque sensor which detects a steering torque applied to the operation member and outputs a torque signal in accordance with the detected steering torque; and a motor driving control circuit which outputs a motor driving command signal for driving the electric motor on the basis of the torque signal outputted from the torque sensor. At start or stop of the operation of the electric power steering system, the motor driving command signal is limited in accordance with the magnitude of the steering torque detected by the torque sensor.

摘要翻译： 提供了一种电动助力转向系统，其使用电动机作为驱动源，以根据操作构件的操作向安装在机动车辆上的转向机构施加转向辅助力。 电动助力转向系统包括：转矩传感器，其检测施加到操作构件的转向转矩，并根据检测到的转向转矩输出转矩信号; 以及电动机驱动控制电路，其基于从转矩传感器输出的转矩信号输出用于驱动电动机的电动机驱动指令信号。 在电动助力转向系统的运转开始或停止时，根据由转矩传感器检测出的转向转矩的大小来限制电动机驱动指令信号。