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公开(公告)号：US5616937A
公开(公告)日：1997-04-01
申请号：US737706
申请日：1991-07-30
IPC分类号： H01L21/203 , H01L21/36 , H01L33/00 , H01L33/14 , H01L33/28 , H01L33/42 , H01L33/44 , H01S5/327 , H05B33/12 , H05B33/14
CPC分类号： H01L33/44 , H01L33/0037 , H01L33/28 , H01L33/285 , H01S5/327 , H05B33/12 , H05B33/145 , H01L33/14
摘要： A compound semiconductor luminescent device is disclosed which comprises a semiconductor substrate and a multi-layered structure disposed on the substrate, the multi-layered structure comprising at least one conductive layer, a luminescent layer, and a current injection layer, wherein the substrate and the layers are made of at least one kind of II-VI group compound semiconductor.
摘要翻译： 公开了一种化合物半导体发光装置，其包括半导体衬底和设置在衬底上的多层结构，所述多层结构包括至少一个导电层，发光层和电流注入层，其中衬底和 层由至少一种II-VI族化合物半导体制成。
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2.发明授权Method for producing a group II-VI compound semiconductor thin film and a group II-VI compound semiconductor device 失效II-VI族化合物半导体薄膜和II-VI族化合物半导体器件的制造方法
公开(公告)号：US5508522A
公开(公告)日：1996-04-16
申请号：US169299
申请日：1993-12-17
IPC分类号： H01L21/363 , H01L33/04 , H01L33/14 , H01L33/16 , H01L33/28 , H01L33/30 , H01L33/34 , H01L33/40 , H01L33/62 , H01S5/00 , H01S5/32 , H01S5/327 , H01L29/06
CPC分类号： H01L33/28 , H01L21/02395 , H01L21/02406 , H01L21/02433 , H01L21/02557 , H01L21/0256 , H01L21/02576 , H01L21/02631 , H01L33/16 , H01S5/327 , H01S5/3202
摘要： A method for fabricating a semiconductor thin film is disclosed. The method includes the step of epitaxially growing a semiconductor layer made of a group II-VI compound semiconductor to have a thickness of at least one atomic layer or more, on a main plane of a single-crystal semiconductor substrate, the semiconductor substrate having one of a diamond structure and a zinc blende structure, the main plane being inclined by an angle in the range of 2 to 16 degrees with respect to a (100) plane.
摘要翻译： 公开了半导体薄膜的制造方法。 该方法包括在单晶半导体衬底的主平面上外延生长由II-VI族化合物半导体制成的半导体层以具有至少一个原子层以上的厚度的步骤，该半导体衬底具有一个 的金刚石结构和闪锌矿结构，所述主平面相对于（100）面倾斜2至16度的范围内的角度。
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3.发明授权
公开(公告)号：US5187116A
公开(公告)日：1993-02-16
申请号：US547077
申请日：1990-07-03
IPC分类号： H01L21/203 , H01L21/28 , H01L21/285 , H01L33/14 , H01L33/28 , H01L33/40
CPC分类号： H01L33/40 , H01L33/005 , H01L33/0062 , H01L33/0083 , H01L33/145 , H01L33/285 , H01L33/38 , H01L33/08
摘要： A process for preparing an electroluminescent device of a compound semiconductor comprising a step (A) of epitaxially forming over a semiconductor substrate an electroconductive layer of a compound semiconductor and an electroluminescent layer of a p-n junction type compound semiconductor placed over the electroconductive layer and a step (B) of forming a pair of ohmic electrodes as electrically connected to each of said layers, both of the steps (A) and (B) being performed by using molecular beam growth under the irradiation with a light beam.
摘要翻译： 一种制备化合物半导体的电致发光器件的方法，包括在半导体衬底上外延形成化学半导体的导电层和置于导电层上的pn结型化合物半导体的电致发光层的步骤（A）和步骤 （B）形成一对欧姆电极，电连接到每个所述层，两个步骤（A）和（B）都是通过在光束照射下使用分子束生长进行的。
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公开(公告)号：US5237182A
公开(公告)日：1993-08-17
申请号：US798642
申请日：1991-11-26
CPC分类号： H01L33/28 , H01L33/007 , H01L33/0083 , H01L33/0087 , H01L33/285 , H01L33/32
摘要： An electroluminescent device of compound semiconductor including a semiconductor substrate, a buffer layer epitaxially grown on the semiconductor substrate and a luminescent layer epitaxially grown on the buffer layer, the substrate being formed from a single crystal of zinc sulfide, zinc selenide or a mixed crystal thereof, the luminescent layer being formed from aluminum nitride, indium nitride, gallium nitride or a mixed crystal of at least two of the nitrides.
摘要翻译： 一种化合物半导体的电致发光器件，包括半导体衬底，在半导体衬底上外延生长的缓冲层和在缓冲层上外延生长的发光层，所述衬底由硫化锌，硒化锌或其混合晶体的单晶形成 ，所述发光层由氮化铝，氮化铟，氮化镓或至少两个所述氮化物的混晶构成。
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公开(公告)号：US5554877A
公开(公告)日：1996-09-10
申请号：US938536
申请日：1992-09-02
IPC分类号： H01L27/15 , H01L33/00 , H01L33/08 , H01L33/14 , H01L33/20 , H01L33/28 , H01L33/30 , H01L33/40 , H01L33/62 , H01C29/78
CPC分类号： H01L27/156 , H01L24/49 , H01L33/0079 , H01L33/40 , H01L2224/45144 , H01L2224/48463 , H01L2224/4918 , H01L24/45 , H01L2924/01029 , H01L2924/12041 , H01L33/28 , H01L33/62
摘要： An electroluminescent device of compound semiconductor includes a compound semiconductor substrate having at least one through-hole, an electroluminescent part consisting of a plurality of epitaxial compound semiconductor layers formed on the substrate, and at least a pair of electrodes having external leads in which one electrode is connected to the uppermost layer of the electroluminescent part and another electrode is directly connected to the lowest layer of the electroluminescent part through the through-hole of the substrate. Thereby, a voltage from an external source is enabled to be directly applied to the electroluminescent part.
摘要翻译： 化合物半导体的电致发光器件包括具有至少一个通孔的化合物半导体衬底，由形成在衬底上的多个外延化合物半导体层组成的电致发光部分和至少一对具有外部引线的电极，其中一个电极 连接到电致发光部分的最上层，另一个电极通过基板的通孔直接连接到电致发光部分的最下层。 由此，能够将来自外部源的电压直接施加到电致发光部。
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公开(公告)号：US5057183A
公开(公告)日：1991-10-15
申请号：US446114
申请日：1989-12-05
IPC分类号： C30B23/08 , C30B29/48 , H01L21/203 , H01L21/363 , H01L29/22 , H01L31/18
CPC分类号： H01L33/0083 , H01L21/02406 , H01L21/02433 , H01L21/02474 , H01L21/02477 , H01L21/02507 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/02573 , H01L21/02631 , H01L29/22 , H01L31/1828 , H01L31/1832 , Y02E10/543
摘要： An improved process for the production of an epitaxial II-VI compound semiconductor containing sulfur as the VI element by molecular beam epitaxy employing a sulfur molecular beam and a II element molecular beam in which the sulfur molecular beam is provided from solid sulfur through a specific two-step heating.
摘要翻译： 通过使用硫分子束和II元素分子束通过分子束外延生产含有硫作为VI元素的外延II-VI化合物半导体的改进方法，其中硫分子束由固体硫通过特定的两个 - 步骤加热。
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公开(公告)号：US5055363A
公开(公告)日：1991-10-08
申请号：US382239
申请日：1989-07-19
IPC分类号： H05B33/10 , G09F13/22 , H01L21/203 , H01L21/363 , H01L27/15 , H01L33/00 , H01L33/08 , H01L33/14 , H01L33/20 , H01L33/28 , H01L33/30 , H01L33/34 , H01L33/38 , H01L33/40 , H01L33/42 , H01S5/00 , H01S5/327 , H05B33/12 , H05B33/14
CPC分类号： H01L33/145 , G09F13/22 , G09F2013/222 , H01L2224/48463 , H01L2224/49107 , H01L2224/4918 , H01L27/156 , H01L33/0037 , H01L33/285 , Y10S428/901 , Y10S428/917
摘要： The present invention provides an electroluminescent device of a Group II-VI compound semiconductor which comprises a substrate, a light-emitting portion, and a conductive portion provided at least between the substrate and the light-emitting portion for injecting into the light-emitting portion the current to be produced in the device by the application of an external voltage.
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公开(公告)号：US5037709A
公开(公告)日：1991-08-06
申请号：US382238
申请日：1989-07-19
IPC分类号： H05B33/10 , G09F13/22 , H01L21/203 , H01L21/363 , H01L27/15 , H01L33/00 , H01L33/08 , H01L33/14 , H01L33/20 , H01L33/28 , H01L33/30 , H01L33/34 , H01L33/38 , H01L33/40 , H01L33/42 , H01S5/00 , H01S5/327 , H05B33/12 , H05B33/14
CPC分类号： H01L33/145 , G09F13/22 , G09F2013/222 , H01L2224/48463 , H01L2224/49107 , H01L2224/4918 , H01L27/156 , H01L33/0037 , H01L33/285 , Y10S428/901 , Y10S428/917
摘要： The present invention provides an electroluminescent device of Group II-VI compound semiconductor which comprises a substrate, a light-emitting portion, and a conductive portion provided at least between the substrate and the light-emitting portion for injecting into the light-emitting portion the current to be produced in the device by the application of an external voltage.
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公开(公告)号：US5416884A
公开(公告)日：1995-05-16
申请号：US245556
申请日：1994-05-18
摘要： A semiconductor waveguide structure of the II-VI group compound semiconductor made of the II group element and the VI group element. The waveguide structure includes a waveguide layer and clad layers which puts the waveguide layer therebetween. The waveguide layer has a refractive index larger than a refractive index of each clad layer. At least one of the clad layers contains the element Cd. With such an arrangement, the refractive index of one clad layer is established to be different from that of the other clad layer. In such a case, it is preferable that the semiconductor waveguide structure comprises at least two waveguide layers which are adjacent to each other and that the structure has either one of the features as follows: each refractive index of the waveguide layers varies stepwise at each boundary surface of the layers; the refractive index of at least one of the waveguide layers varies so as to be inclined; and super lattice layers are formed between the clad layer and the waveguide layers. Further, in the arrangement, more than two waveguide layers and clad layers may be formed in such a manner that each of the waveguide layer is put between the clad layers.
摘要翻译： 由II族元素和VI族元素构成的II-VI族化合物半导体的半导体波导结构。 波导结构包括波导层和将波导层置于其间的包覆层。 波导层的折射率大于每个包覆层的折射率。 包层中的至少一个包含元素Cd。 通过这样的布置，确定了一个包覆层的折射率与另一个覆盖层的折射率不同。 在这种情况下，优选半导体波导结构包括彼此相邻的至少两个波导层，并且该结构具有以下特征之一：波导层的每个折射率在每个边界处逐步变化 层的表面; 至少一个波导层的折射率变化以倾斜; 并且在覆盖层和波导层之间形成超晶格层。 此外，在该布置中，可以以使每个波导层放置在包层之间的方式形成多于两个的波导层和包层。
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公开(公告)号：US5204283A
公开(公告)日：1993-04-20
申请号：US750432
申请日：1991-08-20
IPC分类号： H01L21/363
CPC分类号： H01L21/02406 , H01L21/02409 , H01L21/02433 , H01L21/02557 , H01L21/0256 , H01L21/02576 , H01L21/02631 , H01L21/02634 , Y10S148/064
摘要： A high-purity II-VI semiconducting compound can be produced by initially preparing a substrate of a II-VI semiconducting compound by a chemical transport method with a halogen as transport medium and then epitaxially growing a layer of a II-VI compound on this substrate.
摘要翻译： 可以通过首先通过化学传递方法用卤素作为传输介质制备II-VI半导体化合物的底物，然后在该衬底上外延生长一层II-VI化合物来制备高纯度II-VI半导体化合物 。
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