公开(公告)号：US20210183680A1

公开(公告)日：2021-06-17

申请号：US17184454

申请日：2021-02-24

Applicant: Applied Materials, Inc.

Inventor： Hamid NOORBAKHSH ,  Ippei NAKAGAWA ,  Nobuhiro YOSHIDA

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/687

Abstract: Implementations described herein provide a substrate support assembly that includes a seal band. The seal band has a ring shaped body. The ring shaped body has an inner surface, a top surface, and a bottom surface. Each of the top surface and the bottom surface extend from the inner surface at a first angle of more than 110° from the inner surface. The seal band also has an outer surface that has an indent formed therein. The outer surface connects the top surface to the bottom surface. A second angle is formed between an imaginary line normal to the inner surface and the bottom surface. The second angle is between about 10° and about 30°. The ring shaped body has a cross-sectional profile forming a V-shape.

公开(公告)号：US20220165553A1

公开(公告)日：2022-05-26

申请号：US17183595

申请日：2021-02-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Hamid NOORBAKHSH ,  James Hugh ROGERS

IPC: H01J37/32

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes a slit door having an arcuate profile and including a first plate slidably coupled to a second plate, wherein the first plate is configured to be coupled to an actuator, wherein the second plate has an inner surface that includes silicon, and wherein the inner surface includes a plurality of grooves.

公开(公告)号：US20150041061A1

公开(公告)日：2015-02-12

申请号：US14452228

申请日：2014-08-05

Applicant: Applied Materials, Inc.

Inventor： Sergio Fukuda SHOJI ,  Hamid NOORBAKHSH ,  Jong Mun KIM ,  Jason Della ROSA ,  Ajit BALAKRISHNA

IPC: C23C16/455 ,  H01L21/67 ,  F15D1/02 ,  H01J37/32

CPC classification number: C23C16/45591 ,  C23C16/4412 ,  F15D1/025 ,  H01J37/32633 ,  H01J37/32834

Abstract: Embodiments of the present invention provide apparatus and methods for reducing non-uniformity and/or skews during substrate processing. One embodiment of the present invention provides a flow equalizer assembly for disposing between a vacuum port and a processing volume in a processing chamber. The flow equalizing assembly includes a first plate having at least one first opening, and a second plate having two or more second openings. The first and second plates define a flow redistributing volume therebetween, and the at least one first opening and the two or more second openings are staggered.

Abstract translation: 本发明的实施例提供了用于在衬底处理期间减少不均匀性和/或偏斜的装置和方法。 本发明的一个实施例提供了一种流量均衡器组件，用于在处理室中的真空口和处理容积之间设置。 流量均衡组件包括具有至少一个第一开口的第一板和具有两个或更多个第二开口的第二板。 第一和第二板限定其间的流动再分布体积，并且至少一个第一开口和两个或更多个第二开口交错。

公开(公告)号：US20210351014A1

公开(公告)日：2021-11-11

申请号：US16870740

申请日：2020-05-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Hamid NOORBAKHSH

IPC: H01J37/32 ,  H01L21/677

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit includes a slit door having an arcuate profile and including a first plate coupled to a second plate, wherein the first plate is configured to be coupled to an actuator, and wherein the second plate has a processing volume facing surface that includes silicon.

公开(公告)号：US20170101713A1

公开(公告)日：2017-04-13

申请号：US15219758

申请日：2016-07-26

Applicant: Applied Materials, Inc.

Inventor： Haitao WANG ,  Hamid NOORBAKHSH ,  Chunlei ZHANG ,  Sergio Fukuda SHOJI ,  Kartik RAMASWAMY ,  Roland SMITH ,  Brad L. MAYS

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/4401 ,  H01J37/3244

Abstract: Embodiments of the present disclosure relate to a showerhead assembly for use in a processing chamber. The showerhead assembly includes a porous insert disposed in a space defined between a gas distribution plate and a base plate to moderate the corrosive radicals resulting from plasma ignition to reduce particle issues and metal contamination in the chamber. The porous insert is a conductive material, such as metal, used to reduce the gap electrical field strength, or may be a dielectric material such as ceramic, polytetrafluoroethylene, polyamide-imide, or other materials with a low dielectric loss and high electrical field strength under conditions of high frequency and strong electric fields. As such, the electrical breakdown threshold is enhanced. The porous insert may reduce and/or eliminate showerhead backside plasma ignition and may include multiple concentric narrow rings that cover gas holes of the gas distribution plate.

公开(公告)号：US20160329256A1

公开(公告)日：2016-11-10

申请号：US15212938

申请日：2016-07-18

Applicant: Applied Materials, Inc.

Inventor： S. M. Reza SADJADI ,  Dmitry LUBOMIRSKY ,  Hamid NOORBAKHSH ,  John Zheng YE ,  David H. QUACH ,  Sean S. KANG

IPC: H01L21/66 ,  H01L21/3065 ,  C23C14/22 ,  H01L21/683 ,  H01J37/32 ,  C23C16/44 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L22/20 ,  C23C14/22 ,  C23C16/44 ,  H01J37/32082 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32605 ,  H01J37/32642 ,  H01J37/32697 ,  H01J2237/334 ,  H01L21/02104 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6833 ,  H01L21/68735

Abstract: A dynamically tunable process kit, a processing chamber having a dynamically tunable process kit, and a method for processing a substrate using a dynamically tunable process kit are provided. The dynamically tunable process kit allows one or both of the electrical and thermal state of the process kit to be changed without changing the phyisical construction of the process kit, thereby allowing plasma properties, and hence processing results, to be easily changed without replacing the process kit. The processing chamber having a dynamically tunable process kit includes a chamber body that includes a portion of a conductive side wall configured to be electrically controlled, and a process kit. The processing chamber includes a first control system operable to control one or both of an electrical and thermal state of the process kit and a second control system operable to control an electrical state of the portion of the side wall.

公开(公告)号：US20160155612A1

公开(公告)日：2016-06-02

申请号：US15013795

申请日：2016-02-02

Applicant: Applied Materials, Inc.

Inventor： Chetan MAHADESWARASWAMY ,  Walter R. MERRY ,  Sergio Fukuda SHOJI ,  Chunlei ZHANG ,  Yashaswini PATTAR ,  Duy D. NGUYEN ,  Tina TSONG ,  Shane C. NEVIL ,  Douglas A. BUCHBERGER, JR. ,  Fernando M. SILVEIRA ,  Brad L. MAYS ,  Kartik RAMASWAMY ,  Hamid NOORBAKHSH

IPC: H01J37/32 ,  G05B6/02

CPC classification number: H01J37/32009 ,  G05B6/02 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32935 ,  H01J2237/334 ,  H05H1/0081

Abstract: Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

Abstract translation: 用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。 温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。

公开(公告)号：US20200381282A1

公开(公告)日：2020-12-03

申请号：US15930562

申请日：2020-05-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Anwar HUSAIN ,  Hamid NOORBAKHSH ,  Kartik RAMASWAMY

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32

Abstract: Methods and apparatus for preventing or reducing arcing of an electrostatic chuck in a process chamber. In some embodiments, a method of preventing or reducing arcing of an electrostatic chuck includes forming a first recess in at least a portion of a sidewall of the electrostatic chuck and filling the first recess with a conformable dielectric material that remains conformable (elastic) over a temperature range of at least approximately zero degrees Celsius to approximately 80 degrees Celsius. In some embodiments, the first recess is filled with the conformable dielectric material such that the conformable dielectric material does not bond to at least one surface of the first recess. The conformable dielectric material may also be used to fill a second recess in a dielectric sleeve adjacent to the electrostatic chuck.

公开(公告)号：US20200238303A1

公开(公告)日：2020-07-30

申请号：US16846000

申请日：2020-04-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Dmitry LUBOMIRSKY ,  Vladimir KNYAZIK ,  Hamid NOORBAKHSH ,  Jason DELLA ROSA ,  Zheng John YE ,  Jennifer Y. SUN ,  Sumanth BANDA

IPC: B05B1/00 ,  H01J37/32 ,  B05B1/18 ,  C23C16/455

Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a substrate processing chamber includes a body having a first side and an opposing second side; a gas distribution plate disposed proximate the second side of the body; and a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body, wherein the body is electrically coupled to the gas distribution plate through the clamp.

公开(公告)号：US20200066495A1

公开(公告)日：2020-02-27

申请号：US16415723

申请日：2019-05-17

Applicant: Applied Materials, Inc.

Inventor： Hamid NOORBAKHSH ,  Anwar HUSAIN ,  Reyn WAKABAYASHI

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687

Abstract: The present disclosure generally relates to apparatuses and methods for controlling a plasma sheath near a substrate edge. The apparatus relates to a processing chamber and/or a substrate support that includes an edge ring assembly with an edge ring electrode and an electrostatic chuck with a chucking electrode. The edge ring assembly is positioned adjacent the electrostatic chuck, such as with the edge ring assembly positioned exterior to or about the electrostatic chuck. The edge ring assembly includes a base and a cap positioned above the base with the edge ring electrode positioned between the cap and the base. The base of the edge ring electrode may include an inner recess and/or an outer recess with the cap including one or more lips that extend into the inner recess and/or the outer recess. One or more silicon rings and/or insulating rings are positioned adjacent the edge ring assembly.