公开(公告)号：US09017776B2

公开(公告)日：2015-04-28

申请号：US13625229

申请日：2012-09-24

Applicant: Applied Materials, Inc.

Inventor： Hyman W. H. Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

IPC: H05H1/24 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C23C16/00

CPC classification number: C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

Abstract translation: 本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。 在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。 在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔， 集中通道侧壁，集中通道。 腔室盖组件还包括设置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS） 与集中通道的流体通信。

公开(公告)号：US20160064275A1

公开(公告)日：2016-03-03

申请号：US14469980

申请日：2014-08-27

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Paul F. Ma ,  Hua Ai ,  Jiang Lu ,  Mei Chang ,  David Thompson

IPC: H01L21/768 ,  H01L21/311

CPC classification number: H01L21/76826 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76849 ,  H01L21/76883

Abstract: Methods of selectively depositing a metal selectively onto a metal surface relative to a dielectric surface. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon.

Abstract translation: 相对于电介质表面选择性地将金属选择性地沉积到金属表面上的方法。 方法包括将金属氧化物表面还原成金属表面并保护电介质表面以使其上的沉积最小化。

公开(公告)号：US10043709B2

公开(公告)日：2018-08-07

申请号：US14931417

申请日：2015-11-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Hua Ai ,  Jiang Lu ,  Avgerinos V. Gelatos ,  Paul F. Ma ,  Sang Ho Yu ,  Feng Q. Liu ,  Xinyu Fu ,  Weifeng Ye

IPC: H01L21/768 ,  C23C16/06 ,  H01L21/285 ,  C23C16/04 ,  H01L23/532

Abstract: Methods for selectively depositing a cobalt layer are provided herein. In some embodiments, methods for selectively depositing a cobalt layer include: exposing a substrate to a first process gas to passivate an exposed dielectric surface, wherein the substrate comprises a dielectric layer having an exposed dielectric surface and a metal layer having an exposed metal surface; and selectively depositing a cobalt layer atop the exposed metal surface using a thermal deposition process.

公开(公告)号：US10727119B2

公开(公告)日：2020-07-28

申请号：US16252100

申请日：2019-01-18

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Feiyue Ma ,  Yu Lei ,  Kai Wu ,  Mehul B. Naik ,  Zhiyuan Wu ,  Vikash Banthia ,  Hua Ai

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L23/522

Abstract: Interconnects and methods for forming interconnects are described and disclosed herein. The interconnect contains a stack formed on a substrate having a via and a trench formed therein, a first metal formed from a first material of a first type deposited in the via, and a second metal formed from a second material of a second type deposited in the trench.

公开(公告)号：US20180144973A1

公开(公告)日：2018-05-24

申请号：US15800784

申请日：2017-11-01

Applicant: Applied Materials, Inc.

Inventor： Weifeng Ye ,  Jiang Lu ,  Feng Chen ,  Zhiyuan Wu ,  Kai Wu ,  Vikash Banthia ,  He Ren ,  Sang Ho Yu ,  Mei Chang ,  Feiyue Ma ,  Yu Lei ,  Keyvan Kashefizadeh ,  Kevin Moraes ,  Paul F. Ma ,  Hua Ai

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/7685 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/53238

Abstract: Methods to selectively deposit capping layers on a copper surface relative to a dielectric surface comprising separately the copper surface to a cobalt precursor gas and a tungsten precursor gas, each in a separate processing chamber. The copper surface and the dielectric surfaces can be substantially coplanar. The combined thickness of cobalt and tungsten capping films is in the range of about 2 Å to about 60 Å.

公开(公告)号：US20140087091A1

公开(公告)日：2014-03-27

申请号：US13625229

申请日：2012-09-24

Applicant: Applied Materials, Inc.

Inventor： Hyman W.H. Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong Yuan ,  Hougong Wang ,  Salvador P. Umotoy ,  San H. Yu

IPC: B05B1/14 ,  C23C16/34

CPC classification number: C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

Abstract translation: 本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。 在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。 在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔， 集中通道侧壁，集中通道。 室盖组件还包括布置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS） 与集中通道的流体通信。