公开(公告)号：US20200235006A1

公开(公告)日：2020-07-23

申请号：US16564489

申请日：2019-09-09

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan WU ,  Nikolaos BEKIARIS ,  Mehul B. NAIK ,  Jin Hee PARK ,  Mark Hyun LEE

IPC: H01L21/768 ,  H01L21/67 ,  H01L21/285 ,  H01L21/288 ,  H01L23/528 ,  H01L23/532

Abstract: In one implementation, a method of forming a cobalt layer on a substrate is provided. The method comprises forming a barrier and/or liner layer on a substrate having a feature definition formed in a first surface of the substrate, wherein the barrier and/or liner layer is formed on a sidewall and bottom surface of the feature definition. The method further comprises exposing the substrate to a ruthenium precursor to form a ruthenium-containing layer on the barrier and/or liner layer. The method further comprises exposing the substrate to a cobalt precursor to form a cobalt seed layer atop the ruthenium-containing layer. The method further comprises forming a bulk cobalt layer on the cobalt seed layer to fill the feature definition.

公开(公告)号：US20170178956A1

公开(公告)日：2017-06-22

申请号：US15384219

申请日：2016-12-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Jin Hee PARK ,  Tae Hong HA ,  Sang-Hyeob LEE ,  Thomas Jongwan KWON ,  Jaesoo AHN ,  Xianmin TANG ,  Er-Xuan PING ,  Sree KESAPRAGADA

IPC: H01L21/768 ,  C23C16/458 ,  C23C16/48 ,  C23C16/455 ,  H01L21/285 ,  H01L21/67

CPC classification number: H01L21/76879 ,  C23C16/045 ,  C23C16/16 ,  C23C16/18 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/481 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76882 ,  H01L21/76883 ,  H01L23/53209 ,  H01L27/11556 ,  H01L27/11582

Abstract: Methods and apparatus for depositing a cobalt layer in a feature, such as, a word line formed in a substrate, are provided herein. In some embodiments, method of processing a substrate includes: exposing a substrate at a first temperature to a cobalt containing precursor to deposit a cobalt layer within a word line feature formed in the substrate, wherein the word line feature is part of a 3D NAND device; and annealing the substrate to remove contaminants from the cobalt layer and to reflow the cobalt layer into the word line feature, wherein the substrate is at a second temperature greater than the first temperature during the annealing.

公开(公告)号：US20180211872A1

公开(公告)日：2018-07-26

申请号：US15874041

申请日：2018-01-18

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan WU ,  Nikolaos BEKIARIS ,  Mehul B. NAIK ,  Jin Hee PARK ,  Mark Hyun LEE

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L21/288 ,  H01L21/285

CPC classification number: H01L21/76846 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/2885 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76882 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53252

Abstract: In one implementation, a method of forming a cobalt layer on a substrate is provided. The method comprises forming a barrier and/or liner layer on a substrate having a feature definition formed in a first surface of the substrate, wherein the barrier and/or liner layer is formed on a sidewall and bottom surface of the feature definition. The method further comprises exposing the substrate to a ruthenium precursor to form a ruthenium-containing layer on the barrier and/or liner layer. The method further comprises exposing the substrate to a cobalt precursor to form a cobalt seed layer atop the ruthenium-containing layer. The method further comprises forming a bulk cobalt layer on the cobalt seed layer to fill the feature definition.