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    SUSCEPTOR TRANSFER FOR PROCESS CHAMBER
    2.
    发明公开
    SUSCEPTOR TRANSFER FOR PROCESS CHAMBER 审中-公开

    公开(公告)号：US20240105485A1

    公开(公告)日：2024-03-28

    申请号：US18299119

    申请日：2023-04-12

    Applicant: Applied Materials, Inc.

    Inventor： Ribhu GAUTAM ,  Shu-Kwan LAU ,  Masato ISHII ,  Miao-Chun CHEN ,  Kuan Chien SHEN

    IPC: H01L21/677 ,  H01L21/687

    CPC classification number: H01L21/67748 ,  H01L21/68707

    Abstract: A method of moving a susceptor in a processing system, suitable for use in semiconductor processing, is provided. The method includes: moving a first susceptor from an interior volume of a first enclosure to an interior volume of a process chamber during a first time period; and positioning, during a second time period, a first substrate on the first susceptor when the first susceptor is in the process chamber, wherein the interior volume of the first enclosure and interior volume of the process chamber are maintained at a non-atmospheric pressure from the beginning of the first time period until the end of the second time period.

    SUSCEPTOR
    4.
    发明公开
    SUSCEPTOR 审中-公开

    公开(公告)号：US20240347372A1

    公开(公告)日：2024-10-17

    申请号：US18632421

    申请日：2024-04-11

    Applicant: Applied Materials, Inc.

    Inventor： Balakrishnam R. JAMPANA ,  Masato ISHII ,  Zhepeng CONG

    IPC: H01L21/687 ,  C23C16/458 ,  C30B25/12

    CPC classification number: H01L21/68785 ,  C23C16/4583 ,  H01L21/6875 ,  C30B25/12

    Abstract: Described herein are a susceptor, processing chambers having the same, and method for substrate processing using the same. In one example, a susceptor for supporting a substrate during processing is provided. The susceptor has a disk shaped body that includes a rim circumscribing an inner region. The inner region is recessed to form a recessed pocket that is configured to receive a substrate. A plurality of bumps extend radially into the inner region that are configured to contact an outer edge of the substrate when the substrate is disposed in the recessed pocket. A venting region is defined within the inner region. The venting region is defined by a plurality of vent holes formed through the body. The venting region terminates at a radius originating from a centerline of the body that is at least 4.0 millimeter less than a radius defining an inner wall of the rim.

    CHAMBER PRESSURE CONTROL APPARATUS FOR NEAR ATMOSPHERIC EPITAXIAL GROWTH SYSTEM
    6.
    发明申请
    CHAMBER PRESSURE CONTROL APPARATUS FOR NEAR ATMOSPHERIC EPITAXIAL GROWTH SYSTEM 审中-公开
    大气环境生长系统的室内压力控制装置

    公开(公告)号：US20150013604A1

    公开(公告)日：2015-01-15

    申请号：US14305022

    申请日：2014-06-16

    Applicant: Applied Materials, Inc.

    Inventor： Toshiyuki NAKAGAWA ,  Koji NAKANISHI ,  Tetsunori SASAYAMA ,  Masato ISHII

    IPC: C30B25/16

    CPC classification number: C30B25/165 ,  C23C16/4412 ,  C23C16/45557 ,  C30B29/36

    Abstract: The embodiments described herein generally relate to devices and systems for increased pressure control of near atmospheric deposition processes. Devices and systems disclosed herein generally include an exhaust apparatus for a processing chamber in connection with an automated valve which is positioned between the exhaust port and the abatement system. The processing chamber can generally be maintained at a pressure above atmospheric pressure while the automated valve controls the flow of gases leaving the chamber to keep the pressure constant in the chamber.

    Abstract translation: 本文描述的实施例通常涉及用于增加近大气沉积过程的压力控制的装置和系统。 本文公开的装置和系统通常包括用于处理室的排气装置，其与定位在排气口和减排系统之间的自动阀连接。 处理室通常可以保持在高于大气压的压力下，同时自动阀控制离开室的气体流，以保持室内的压力恒定。

    GAS FLOW CONTROL FOR EPI THICKNESS UNIFORMITY IMPROVEMENT
    8.
    发明申请
    GAS FLOW CONTROL FOR EPI THICKNESS UNIFORMITY IMPROVEMENT 审中-公开

    公开(公告)号：US20180053653A1

    公开(公告)日：2018-02-22

    申请号：US15682171

    申请日：2017-08-21

    Applicant: Applied Materials, Inc.

    Inventor： Masato ISHII

    IPC: H01L21/205

    CPC classification number: H01L21/2053 ,  C23C16/45504 ,  C23C16/4558 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2686 ,  H01L21/67115 ,  H01L21/67207 ,  H01L21/67253

    Abstract: One implementation provides a method including providing a substrate into a processing chamber through a loading port, rotating the substrate clockwise, providing a gas mixture into a processing region through an inject insert comprising a first, second, and third sets of inject inlets, wherein the first set of inject inlets creates an inner zone inside the processing region, the second set of inject inlets creates a middle zone radially outward of the inner zone, and the third set of inject inlets creates an outer zone radially outward the middle zone, the gas mixture is provided by flowing the gas mixture through the first and second sets of inject inlets, and inject inlets of the third set of inject inlets that are away from the loading port, while blocking flow of the gas mixture into inject inlets of the third set of inject inlets that are closer to the loading port.

    CLUSTER TOOLS, SYSTEMS, AND METHODS HAVING ONE OR MORE PRESSURE STABILIZATION CHAMBERS
    10.
    发明申请
    CLUSTER TOOLS, SYSTEMS, AND METHODS HAVING ONE OR MORE PRESSURE STABILIZATION CHAMBERS 有权

    公开(公告)号：US20230075715A1

    公开(公告)日：2023-03-09

    申请号：US17869529

    申请日：2022-07-20

    Applicant: Applied Materials, Inc.

    Inventor： Saurabh CHOPRA ,  Martin Jeffrey SALINAS ,  Masato ISHII ,  Sheng-Chen TWAN ,  Srividya NATARAJAN

    IPC: C23C16/44 ,  H01L21/02 ,  H01L21/67

    Abstract: In one aspect, a process operation is conducted at a first pressure in a process chamber, and an epitaxial deposition operation is conducted at an atmospheric pressure in an epitaxial deposition chamber. The atmospheric pressure is greater than the first pressure. The process chamber is mounted to a first mainframe that operates at the first pressure (a reduced pressure), and the epitaxial deposition chamber is mounted to a second mainframe that operates at the atmospheric chamber. In one aspect, the process chamber is a cleaning chamber (such as a pre-clean chamber) and the process operation is a cleaning operation. In one aspect, the process chamber is an atmospheric pressure epitaxial deposition chamber and the process operation is an atmospheric pressure epitaxial deposition operation.

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