公开(公告)号：US20240429044A1

公开(公告)日：2024-12-26

申请号：US18746827

申请日：2024-06-18

Applicant: ASM IP Holding B.V.

Inventor： Yan Zhang ,  Ryu Nakano

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/768

Abstract: Provided is a method of filling a gap formed on a substrate, the method comprising the steps of providing the substrate onto a substrate support in a reaction chamber, forming a film on the substrate comprising the steps of supplying a first gas to the reaction chamber and supplying a second gas to the reaction chamber, and treating the film formed on the substrate comprising the steps of supplying a third gas to the reaction chamber and supplying a fourth gas to the reaction chamber, wherein the second gas and the fourth gas are activated in-situ and the third gas is activated remotely.

公开(公告)号：US11830738B2

公开(公告)日：2023-11-28

申请号：US17220745

申请日：2021-04-01

Applicant: ASM IP Holding B.V.

Inventor： Ryu Nakano

IPC: H01L21/225 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L21/2254 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/02274 ,  H01L29/66803

Abstract: In a method for forming a barrier layer, the barrier layer is formed on a base layer having a three-dimensional structure before a dopant-containing layer is formed on the base layer. At this time, at least one of a film thickness, a film quality, and a film type of the barrier layer is controlled in a height direction of the three-dimensional structure by using an atomic layer deposition (ALD) process.

公开(公告)号：US20220216059A1

公开(公告)日：2022-07-07

申请号：US17568027

申请日：2022-01-04

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Takashi Yoshida ,  Ryu Nakano ,  Ivan Zyulkov ,  Yiting Sun ,  Yoann Francis Tomczak ,  David de Roest

IPC: H01L21/285 ,  H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/02 ,  C23C16/52

Abstract: Methods and related systems for lithographically defining patterns on a substrate are disclosed. An exemplary method includes forming a structure. The method includes providing a substrate to a reaction chamber. The substrate comprises a semiconductor and a surface layer. The surface layer comprises amorphous carbon. The method further comprises forming a barrier layer on the surface layer and depositing a metal-containing layer on the substrate. The metal- containing layer comprises oxygen and a metal.

公开(公告)号：US10043661B2

公开(公告)日：2018-08-07

申请号：US15254724

申请日：2016-09-01

Applicant: ASM IP Holding B.V.

Inventor： Richika Kato ,  Ryu Nakano

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L21/225

CPC classification number: H01L21/0228 ,  C23C16/34 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02359 ,  H01L21/02362 ,  H01L21/2254

Abstract: A method for protecting a layer includes: providing a substrate having a target layer; depositing a protective layer on the target layer, which protective layer contacts and covers the target layer and is constituted by a hydrocarbon-based layer; and depositing an oxide layer on the protective layer so that the protective layer in contact with the oxide layer is oxidized. The hydrocarbon-based layer is formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a noble gas without a reactant.

公开(公告)号：US09663857B2

公开(公告)日：2017-05-30

申请号：US14246969

申请日：2014-04-07

Applicant: ASM IP Holding B.V.

Inventor： Ryu Nakano ,  Wataru Adachi

IPC: C23C16/455

CPC classification number: C23C16/45557 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45561 ,  Y10T137/0396

Abstract: A method stabilizes pressure of a reaction chamber during a process using a first gas and a second gas, wherein a gas inlet line is connected to the reaction chamber, and a second gas line and a first gas line are connected to another end of the gas inlet line. The method includes: feeding a first gas in pulses according to a waveform to the reaction chamber through the first gas line and the gas inlet line; and feeding a second gas in pulses according to a reverse waveform to the reaction chamber through the second gas line and the gas inlet line, wherein superimposed waveforms of the waveform and reverse waveform are made substantially or nearly flat, thereby stabilizing pressure of the reaction chamber.

公开(公告)号：US20170018420A1

公开(公告)日：2017-01-19

申请号：US15254724

申请日：2016-09-01

Applicant: ASM IP Holding B.V.

Inventor： Richika Kato ,  Ryu Nakano

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/34 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02359 ,  H01L21/02362 ,  H01L21/2254

Abstract: A method for protecting a layer includes: providing a substrate having a target layer; depositing a protective layer on the target layer, which protective layer contacts and covers the target layer and is constituted by a hydrocarbon-based layer; and depositing an oxide layer on the protective layer so that the protective layer in contact with the oxide layer is oxidized. The hydrocarbon-based layer is formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a noble gas without a reactant.

Abstract translation: 一种保护层的方法包括：提供具有目标层的衬底; 在目标层上沉积保护层，该保护层与目标层接触并覆盖目标层，并由烃基层构成; 以及在所述保护层上沉积氧化物层，使得与氧化物层接触的保护层被氧化。 烃基层通过使用烷基氨基硅烷前体的等离子体增强原子层沉积（PEALD）和没有反应物的惰性气体形成。

公开(公告)号：US09464352B2

公开(公告)日：2016-10-11

申请号：US14268348

申请日：2014-05-02

Applicant: ASM IP Holding B.V.

Inventor： Ryu Nakano ,  Naoki Inoue ,  Kunitoshi Namba

IPC: C23C16/455 ,  C23C16/505 ,  C23C16/40 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02 ,  H01L21/033

CPC classification number: C23C16/45538 ,  C23C16/40 ,  C23C16/402 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32137 ,  H01J37/32146 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337

Abstract: A method for forming an oxide film by plasma-assisted cyclic processing, includes: (i) supplying a precursor to a reaction space wherein a substrate is placed; (ii) applying a first RF power to the reaction space for a first period of time without supplying a precursor; and (iii) applying a second RF power to the reaction space for a second period of time without supplying the precursor, wherein the first RF power is lower than the second RF power, and/or the first period of time is shorter than the second period of time.

Abstract translation: 通过等离子体辅助循环处理形成氧化膜的方法包括：（i）向放置基板的反应空间供给前体; （ii）在不提供前体的情况下将第一RF功率施加到所述反应空间第一时间段; 和（iii）在不提供所述前体的情况下将第二RF功率施加到所述反应空间而不提供所述前体，其中所述第一RF功率低于所述第二RF功率，和/或所述第一时间段短于所述第二RF功率 一段的时间。

公开(公告)号：US20230040728A1

公开(公告)日：2023-02-09

申请号：US17969227

申请日：2022-10-19

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Toshihisa Nozawa ,  Ryu Nakano

IPC: H01L21/033 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/027 ,  C23C16/00 ,  H01L21/02 ,  H01L21/311 ,  C23C16/455

Abstract: Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

公开(公告)号：US11482418B2

公开(公告)日：2022-10-25

申请号：US15925532

申请日：2018-03-19

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Toshihisa Nozawa ,  Ryu Nakano

IPC: C23C16/455 ,  H01L21/033 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/027 ,  C23C16/00 ,  H01L21/02 ,  H01L21/311

Abstract: Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

公开(公告)号：US20210348273A1

公开(公告)日：2021-11-11

申请号：US17307643

申请日：2021-05-04

Applicant: ASM IP Holding B.V.

Inventor： Ryu Nakano ,  Fumitaka Shoji

IPC: C23C16/458 ,  H01L21/683

Abstract: A susceptor assembly for a reactor system may comprise a susceptor body defined by a susceptor outer edge, the susceptor body comprising a susceptor outer portion and a susceptor inner portion, wherein the susceptor outer portion is proximate the susceptor outer edge, and the susceptor inner portion is at least partially enclosed within the susceptor outer portion; a first tuning circuit comprising an edge electrode and a first resonance circuit coupled to the edge electrode, wherein the edge electrode is coupled to the susceptor body; a second tuning circuit comprising a center electrode and a second resonance circuit coupled to the center electrode, wherein the center electrode is coupled to the susceptor body; wherein the edge electrode is disposed more proximate the susceptor outer edge than the center electrode.