公开(公告)号：US20220189804A1

公开(公告)日：2022-06-16

申请号：US17549311

申请日：2021-12-13

申请人： ASM IP Holding B.V.

发明人： Siyao Luan ,  Peipei Gao ,  Xing Lin ,  Alexandros Demos ,  Kishor Patil

IPC分类号： H01L21/67 ,  C23C16/458 ,  C23C16/455

摘要： A fixture includes a frame, a leveling plate, a bracket, and a laser profiler. The frame is arranged for fixation above a reaction chamber arranged to deposit a film onto a substrate. The leveling plate is supported on the frame. The bracket is supported on the leveling plate. The laser profiler is suspended from the bracket, overlays the reaction chamber, and has a field of view that extends through the leveling plate and the frame to determine position of a target within the reaction chamber. Semiconductor processing systems and methods of determining position of targets within reaction chambers in semiconductor processing systems are also described.

公开(公告)号：US20210102292A1

公开(公告)日：2021-04-08

申请号：US17060507

申请日：2020-10-01

申请人： ASM IP Holding B.V.

发明人： Xing Lin ,  Peipei Gao ,  Prajwal Nagaraj ,  Mingyang Ma ,  Wentao Wang ,  Ion Hong Chao ,  Alexandros Demos ,  Paul Ma ,  Hichem M'Saad

IPC分类号： C23C16/455 ,  C23C16/40

摘要： A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

公开(公告)号：US20210310125A1

公开(公告)日：2021-10-07

申请号：US17352011

申请日：2021-06-18

申请人： ASM IP Holding B.V.

发明人： Mingyang Ma ,  Junwei Su ,  Alexandros Demos ,  Xing Lin ,  Sam Kim ,  Gregory Michael Bartlett

IPC分类号： C23C16/52 ,  C23C16/455 ,  B01J4/00 ,  C23C16/44 ,  H01J37/32

摘要： A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

公开(公告)号：US11053591B2

公开(公告)日：2021-07-06

申请号：US16055532

申请日：2018-08-06

申请人： ASM IP Holding B.V.

发明人： Mingyang Ma ,  Junwei Su ,  Alexandros Demos ,  Xing Lin ,  Sam Kim ,  Gregory Michael Bartlett

IPC分类号： H01J37/32 ,  C23C16/52 ,  C23C16/455 ,  B01J4/00 ,  C23C16/44

摘要： A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

公开(公告)号：US10797133B2

公开(公告)日：2020-10-06

申请号：US16014981

申请日：2018-06-21

申请人： ASM IP Holding B.V.

发明人： Chi-Wei Lo ,  Alexandros Demos ,  Raj Kumar

IPC分类号： H01L29/08 ,  H01L29/267 ,  H01L21/02 ,  C23C16/30 ,  H01L29/167 ,  H01L29/24

摘要： A method for depositing a phosphorus doped silicon arsenide film is disclosed. The method may include, providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor, and depositing the phosphorus doped silicon arsenide film over a surface of the substrate. Semiconductor device structures including a phosphorus doped silicon arsenide film deposited by the methods of the disclosure are also provided.

公开(公告)号：US20230125884A1

公开(公告)日：2023-04-27

申请号：US18048145

申请日：2022-10-20

申请人： ASM IP Holding, B.V.

发明人： Gregory Deye ,  Arun Murali ,  Frederick Aryeetey ,  Caleb Miskin ,  Alexandros Demos

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/67 ,  H01L21/687

摘要： A material layer deposition method includes supporting a substrate in a preclean module and exposing the substrate to a preclean etchant while supported within the preclean module. The substrate is transferred to a deposition module and exposed to an adsorbate while supported within the deposition module. A material layer is the deposited onto the substrate while supported within the deposition module subsequent to exposing the substrate to the adsorbate. Semiconductor processing systems and computer program products are also described.

公开(公告)号：US20230005744A1

公开(公告)日：2023-01-05

申请号：US17850370

申请日：2022-06-27

申请人： ASM IP Holding B.V.

发明人： Caleb Miskin ,  Omar Elleuch ,  Peter Westrom ,  Rami Khazaka ,  Qi Xie ,  Alexandros Demos

IPC分类号： H01L21/02 ,  C23C16/455

摘要： A method of forming a structure includes supporting a substrate within a reaction chamber of a semiconductor processing system, the substrate having a recess with a bottom surface and a sidewall surface extending upwards from the bottom surface of the recess. A film is deposited within the recess and onto the bottom surface and the sidewall surface of the recess, the film having a bottom segment overlaying the bottom surface of the recess and a sidewall segment deposited onto the sidewall surface of the recess. The sidewall segment of the film is removed while at least a portion bottom segment of the film is retained within the recess, the sidewall segment of the film removed from the sidewall surface more rapidly than removing the bottom segment of the film from the bottom surface of the recess. Semiconductor processing systems and structures formed using the method are also described.

公开(公告)号：US20220301905A1

公开(公告)日：2022-09-22

申请号：US17697145

申请日：2022-03-17

申请人： ASM IP Holding B.V.

发明人： Han Ye ,  Kai Zhou ,  Peipei Gao ,  Wentao Wang ,  Kishor Patil ,  Fan Gao ,  Krishnaswamy Mahadevan ,  Xing Lin ,  Alexandros Demos

IPC分类号： H01L21/67 ,  H01L21/66 ,  C23C16/46 ,  C23C16/52

摘要： A method of operating a reactor system to provide multi-zone substrate temperature control. The method includes, with a first pyrometer, sensing a temperature of a first zone of a substrate supported in the reactor system, and, with a second pyrometer, sensing a temperature of a second zone of the substrate. The method further includes, with a controller, comparing the temperatures of the first and second zones to setpoint temperatures for the first and second zones and, in response, generating control signals to control heating of the substrate. The method also includes controlling, based on the control signals, operations of a heater assembly operating to heat the substrate.

公开(公告)号：US20220181193A1

公开(公告)日：2022-06-09

申请号：US17457605

申请日：2021-12-03

申请人： ASM IP HOLDING B.V.

发明人： Peipei Gao ,  Wentao Wang ,  Xing Lin ,  Han Ye ,  Ion Hong Chao ,  Siyao Luan ,  Alexandros Demos ,  Fan Gao

IPC分类号： H01L21/687

摘要： A substrate support and lift assembly configured to support and lift a substrate from a susceptor is disclosed. The substrate support and lift assembly can include a susceptor support and a lift pin. The susceptor support can be configured to support the susceptor thereon. The susceptor support includes a plurality of support arms each extending radially from a central portion of the susceptor support to a terminus. Each of the plurality of support arms includes an aperture extending therethrough. The lift pin can be configured to fit through the aperture of a corresponding support arm to lift a substrate on the susceptor.

公开(公告)号：US20210125853A1

公开(公告)日：2021-04-29

申请号：US17075504

申请日：2020-10-20

申请人： ASM IP HOLDING B.V.

发明人： Saket Rathi ,  Shiva K.T. Rajavelu Muralidhar ,  Siyao Luan ,  Alexandros Demos ,  Xing Lin

IPC分类号： H01L21/687 ,  H01L21/324 ,  H01L21/67 ,  H01L21/268

摘要： A susceptor for semiconductor substrate processing is disclosed herein. In some embodiments, the susceptor may comprise an inner susceptor portion and an outer susceptor portion. The susceptor portions may self-align via complementary features, such as tabs on the outer susceptor and recesses on the inner susceptor portion. The inner susceptor portion may contain several contact pads with which to support a wafer during semiconductor processing. In some embodiments, the contact pads are hemispherical to reduce contact area with the wafer, thereby reducing risk of backside damage. The inner susceptor portion may contain a cavity with which to receive a thermocouple. In some embodiments, the diameter of the cavity is greater than the diameter of the thermocouple such that the thermocouple does not contact the walls of the cavity during processing, thereby providing highly accurate temperature measurements.