公开(公告)号：USD1031676S1

公开(公告)日：2024-06-18

申请号：US29760951

申请日：2020-12-04

Applicant: ASM IP HOLDING B.V.

Designer： Peipei Gao ,  Wentao Wang ,  Xing Lin ,  Han Ye ,  Ion Hong Chao ,  Siyao Luan ,  Alexandros Demos ,  Fan Gao

Abstract: FIG. 1 is a front perspective view of a combined susceptor, support, and lift system;
FIG. 2 is a back perspective view thereof;
FIG. 3 is a side view thereof;
FIG. 4 is a cross-sectional view taken along line 4-4 as indicated in FIG. 3;
FIG. 5 is an enlarged view of FIG. 4 shown without broken line environmental subject matter for clarity of the claimed subject matter;
FIG. 6 is a top perspective view of the lift pin thereof;
FIG. 7 is a bottom perspective view of the lift pin thereof;
FIG. 8 is a front view of the lift pin thereof;
FIG. 9 is a back view of the lift pin thereof;
FIG. 10 is a left view of the lift pin thereof;
FIG. 11 is a right view of the lift pin thereof;
FIG. 12 is a top view of the lift pin thereof; and,
FIG. 13 is a bottom view of the lift pin thereof.
The dash-dash broken lines within the shaded area and the dash-dash broken lines in FIGS. 1-13 depicting various components of the susceptor, support, and lift system are for the purpose of illustrating environmental subject matter and portions of the article that form no part of the claimed design. The dot-dash broken line in FIG. 3 is for the purpose of defining the cross-sectional view shown in FIG. 4.

公开(公告)号：US20240112946A1

公开(公告)日：2024-04-04

申请号：US18476067

申请日：2023-09-27

Applicant: ASM IP Holding, B.V.

Inventor： Bradley Wayne Evans ,  Shujin Huang ,  Junwei Su ,  Loc Tran ,  Xing Lin ,  Alexandros Demos

IPC: H01L21/687 ,  C23C16/458

CPC classification number: H01L21/68742 ,  C23C16/4585

Abstract: A lift pin actuator includes a castellated annulus, a first arm, a second arm, and a pin pad. The annulus arranged along a rotation axis and has a first merlon and a second merlon circumferentially separated by a crenel. The first arm is connected to the first merlon and extends outward from the annulus, the second arm is connected to the second merlon and extends outward from the annulus, and the second arm is circumferentially spaced from the first arm by a radial gap. The pin pad is connected to the annulus by the first arm and the second arm, is radially spaced from the annulus by the radial gap, and radially overlaps the crenel to nest a support member within the lift pin actuator during translation of the lift pin actuator along the rotation axis relative to the support member. Process kits, semiconductor processing systems, methods of making lift pin actuators and related material layer deposition methods are also described.

公开(公告)号：US20240068103A1

公开(公告)日：2024-02-29

申请号：US18458101

申请日：2023-08-29

Applicant: ASM IP Holding, B.V.

Inventor： Yanfu Lu ,  Caleb Miskin ,  Alexandros Demos ,  Amir Kajbafvala ,  Arun Murali

IPC: C23C16/52 ,  C23C16/30 ,  C23C16/458 ,  C23C16/46

CPC classification number: C23C16/52 ,  C23C16/30 ,  C23C16/4584 ,  C23C16/46 ,  G01K7/04

Abstract: A chamber arrangement has a chamber body with upper and lower walls. A substrate support is arranged within an interior of the chamber body and supported for rotation about a rotation axis. An upper heater element array is supported above the upper wall and a lower heater element array supported below the lower wall. A pyrometer is supported above the upper heater element array, is optically coupled to the interior of the chamber body, and is operably connected to the upper heater element array. A thermocouple is arranged within the interior of the chamber body, is in intimate mechanical contact with the substrate support, and is operably connected to the lower heater element array. Semiconductor processing systems and material layer deposition methods are also described.

公开(公告)号：US20230324227A1

公开(公告)日：2023-10-12

申请号：US18190696

申请日：2023-03-27

Applicant: ASM IP Holding, B.V.

Inventor： Ernesto Suarez ,  Amir Kajbafvala ,  Caleb Miskin ,  Bubesh Babu Jotheeswaran ,  Alexandros Demos

IPC: C23C16/52 ,  H01L21/67 ,  C23C16/44 ,  G01J5/00

CPC classification number: G01J5/0007 ,  C23C16/4407 ,  C23C16/52 ,  H01L21/67115 ,  H01L21/67248

Abstract: A method of depositing an epitaxial material layer using pyrometer-based control. The method includes cleaning a reaction chamber of a reactor system, and, after the cleaning, providing a substrate within the reaction chamber. The method includes stabilizing a temperature of the substrate relative to a target deposition temperature. During stabilization, the heater assembly is operated with control signals to operate heaters in the heater assembly that are generated based on a direct measurement of the temperature of the substrate, such as with one to three pyrometers. The method includes, after the stabilizing of the temperature of the substrate, depositing an epitaxial material layer on a surface of the substrate. Then, for an additional number of substrates, the method involves repeating the steps of providing a substrate within the reaction chamber, stabilizing the temperature of the substrate, and depositing an epitaxial material layer on the substrate followed by another chamber cleaning.

公开(公告)号：US20230203706A1

公开(公告)日：2023-06-29

申请号：US18086734

申请日：2022-12-22

Applicant: ASM IP Holding B.V.

Inventor： Alexandros Demos ,  Hichem M'Saad ,  Xing Lin ,  Caleb Miskin ,  Shivaji Peddeti ,  Amir Kajbafvala

IPC: C30B25/14 ,  C30B25/12 ,  C30B25/16 ,  C30B25/18 ,  C30B29/06 ,  C30B29/08

CPC classification number: C30B25/14 ,  C30B25/12 ,  C30B25/165 ,  C30B25/186 ,  C30B29/06 ,  C30B29/08

Abstract: A reactor system may comprise a first reaction chamber and a second reaction chamber. The first and second reaction chambers may each comprise a reaction space enclosed therein, a susceptor disposed within the reaction space, and a fluid distribution system in fluid communication with the reaction space. The susceptor in each reaction chamber may be configured to support a substrate. The reactor system may further comprise a first reactant source, wherein the first reaction chamber and the second reaction chamber are fluidly coupled to the first reactant source at least partially by a first reactant shared line. The reactor system may be configured to deliver a first reactant from the first reactant source to the first reaction chamber and a second reaction chamber through the first reactant shared line.

公开(公告)号：US20230193475A1

公开(公告)日：2023-06-22

申请号：US18068399

申请日：2022-12-19

Applicant: ASM IP Holding, B.V.

Inventor： Gregory Deye ,  Caleb Miskin ,  Hichem M'Saad ,  Steven Reiter ,  Alexandros Demos ,  Fei Wang

IPC: C23F1/12

CPC classification number: C23F1/12

Abstract: A method of processing a silicon surface includes using a first radical species to remove contamination from the surface and to roughen the surface; and using a second radical species to smooth the roughened surface. Reaction systems for performing such a method, and silicon surfaces prepared using such a method, also are provided.

公开(公告)号：US20220189804A1

公开(公告)日：2022-06-16

申请号：US17549311

申请日：2021-12-13

Applicant: ASM IP Holding B.V.

Inventor： Siyao Luan ,  Peipei Gao ,  Xing Lin ,  Alexandros Demos ,  Kishor Patil

IPC: H01L21/67 ,  C23C16/458 ,  C23C16/455

Abstract: A fixture includes a frame, a leveling plate, a bracket, and a laser profiler. The frame is arranged for fixation above a reaction chamber arranged to deposit a film onto a substrate. The leveling plate is supported on the frame. The bracket is supported on the leveling plate. The laser profiler is suspended from the bracket, overlays the reaction chamber, and has a field of view that extends through the leveling plate and the frame to determine position of a target within the reaction chamber. Semiconductor processing systems and methods of determining position of targets within reaction chambers in semiconductor processing systems are also described.

公开(公告)号：US20210102292A1

公开(公告)日：2021-04-08

申请号：US17060507

申请日：2020-10-01

Applicant: ASM IP Holding B.V.

Inventor： Xing Lin ,  Peipei Gao ,  Prajwal Nagaraj ,  Mingyang Ma ,  Wentao Wang ,  Ion Hong Chao ,  Alexandros Demos ,  Paul Ma ,  Hichem M'Saad

IPC: C23C16/455 ,  C23C16/40

Abstract: A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

公开(公告)号：US20240331984A1

公开(公告)日：2024-10-03

申请号：US18620464

申请日：2024-03-28

Applicant: ASM IP Holding B.V.

Inventor： Yanfu Lu ,  Alexandros Demos

IPC: H01J37/32 ,  C23C16/24 ,  C23C16/46 ,  H01L21/02

CPC classification number: H01J37/32522 ,  C23C16/24 ,  C23C16/46 ,  H01J37/32357 ,  H01L21/02532 ,  H01L21/0262 ,  H01J2237/3321

Abstract: Methods and apparatuses for a material layer deposition method in a semiconductor manufacturing system. A controller may seat a substrate on a substrate support. A silicon-containing material layer precursor may be provided to a remote plasma unit, which may decompose at least a portion of the silicon-containing material layer precursor. An epitaxial material layer comprising silicon may be deposited onto the substrate using a decomposition product. The deposition rate and/or growth rate may be increased at a given deposition temperature.

公开(公告)号：US20240203733A1

公开(公告)日：2024-06-20

申请号：US18535715

申请日：2023-12-11

Applicant: ASM IP Holding B.V.

Inventor： Omar Elleuch ,  Yanfu Lu ,  Caleb Miskin ,  Alexandros Demos

IPC: H01L21/02 ,  C23C16/52

CPC classification number: H01L21/0262 ,  C23C16/52 ,  H01L21/02532

Abstract: A material layer deposition method includes supporting one and only one substrate in a chamber arrangement, exposing the substrate to a first material layer precursor and a second material layer precursor, and forming a first material layer overlaying the substrate using the first material layer precursor and the second material layer precursor. The first material layer is exposed to the first material layer to the first material layer precursor and a second material layer formed onto the first material layer using the first material layer precursor. The second material layer precursor includes a germanium-containing material layer precursor and the first material layer precursor includes at least one of trisilane (Si3H8) and tetrasilane (Si4H10). Material layer stacks, semiconductor processing systems, and computer program products are also described.