公开(公告)号：US20070015367A1

公开(公告)日：2007-01-18

申请号：US11523206

申请日：2006-09-19

申请人： Adam Cohen ,  Dennis Smalley ,  Michael Lockard ,  Qui Le

发明人： Adam Cohen ,  Dennis Smalley ,  Michael Lockard ,  Qui Le

IPC分类号： H01L21/311

CPC分类号： H01L21/288 ,  B33Y10/00 ,  C23C18/1605 ,  C25D5/022 ,  C25D5/10 ,  H01L21/311 ,  H01L21/7682 ,  H01L21/76879

摘要： A method of fabricating three-dimensional structures from a plurality of adhered layers of at least a first and a second material wherein the first material is a conductive material and wherein each of a plurality of layers includes treating a surface of a first material prior to deposition of the second material. The treatment of the surface of the first material either (1) decreases the susceptibility of deposition of the second material onto the surface of the first material or (2) eases or quickens the removal of any second material deposited on the treated surface of the first material. In some embodiments the treatment of the first surface includes forming a dielectric coating over the surface and the second material is electrodeposited (e.g. using an electroplating or electrophoretic process). In other embodiments the first material is coated with a conductive material that doesn't readily accept deposits of electroplated or electroless deposited materials.

摘要翻译： 从至少第一和第二材料的多个粘附层制造三维结构的方法，其中所述第一材料是导电材料，并且其中多个层中的每一个包括在沉积之前处理第一材料的表面 的第二种材料。 第一材料的表面的处理（1）降低了将第二材料沉积到第一材料的表面上的敏感性，或（2）减轻或加快了沉积在第一材料的处理表面上的任何第二材料的去除 材料。 在一些实施例中，第一表面的处理包括在表面上形成电介质涂层，并且第二材料被电沉积（例如使用电镀或电泳工艺）。 在其它实施例中，第一材料涂覆有不容易接受电镀或无电沉积材料沉积物的导电材料。

公开(公告)号：US20050230261A1

公开(公告)日：2005-10-20

申请号：US11029216

申请日：2005-01-03

申请人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

发明人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25D5/02 ,  C25D5/10 ,  H01L21/44 ,  H01L21/4763

CPC分类号： C25D1/003 ,  C23C18/1605 ,  C23C18/1608 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/405 ,  C25D5/022 ,  C25D5/10

摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

摘要翻译： 本发明的一些实施例涉及在电介质或部分电介质基底上建立单层或多层结构的技术。 某些实施方案将种子层材料直接沉积到基底材料上，而其它实施例使用中间粘合层材料。 一些实施例使用不同种子层材料和/或用于牺牲和结构导电建筑材料的粘合层材料。 一些实施例将种子层和/或粘合层材料应用于有选择性的方式，而其它实施例以毯子的方式应用材料。 一些实施例通过平面化操作去除外来沉积物（例如沉积到不想要形成层的一部分的区域），而其他实施例通过蚀刻操作去除外来材料。 其它实施方案涉及使用至少一种导电结构材料，至少一种导电牺牲材料和至少一种电介质材料形成的多层中尺度或微结构结构的电化学制造。 在一些实施方案中，电介质材料是可UV固化的光聚合物。

公开(公告)号：US20050199583A1

公开(公告)日：2005-09-15

申请号：US11029218

申请日：2005-01-03

申请人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

发明人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25D5/02 ,  C25D5/10 ,  H01L21/44 ,  H01L21/4763

CPC分类号： C25D1/003 ,  B33Y10/00 ,  C23C18/1605 ,  C23C18/1608 ,  C23C18/1653 ,  C25D5/022 ,  C25D5/10

摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

公开(公告)号：US20050173374A1

公开(公告)日：2005-08-11

申请号：US11029014

申请日：2005-01-03

申请人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

发明人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23C18/16 ,  C23F1/00 ,  C25D5/02 ,  C25D5/10 ,  C25D5/34 ,  H01L21/288 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC分类号： B44C1/22 ,  B33Y10/00 ,  B81C1/00492 ,  C03C15/00 ,  C03C25/68 ,  C23C18/1605 ,  C23C18/161 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/405 ,  C23F1/00 ,  C25D1/003 ,  C25D5/02 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/76885

摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

公开(公告)号：US20050215046A1

公开(公告)日：2005-09-29

申请号：US11029215

申请日：2005-01-03

申请人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

发明人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25D5/02 ,  C25D5/10 ,  H01L21/44 ,  H01L21/4763

CPC分类号： C25D1/20 ,  C23C18/1605 ,  C23C18/1608 ,  C23C18/165 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10

摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

公开(公告)号：US20050194258A1

公开(公告)日：2005-09-08

申请号：US11029179

申请日：2005-01-03

申请人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

发明人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25D5/02 ,  C25D5/10 ,  H01L21/44 ,  H01L21/4763

CPC分类号： C25D1/003 ,  C23C18/1605 ,  C23C18/1608 ,  C23C18/165 ,  C23C18/405 ,  C25D5/022 ,  C25D5/10

摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

公开(公告)号：US20050176238A1

公开(公告)日：2005-08-11

申请号：US11029172

申请日：2005-01-03

申请人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

发明人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25D5/02 ,  C25D5/10 ,  H01L21/44 ,  H01L21/4763

CPC分类号： C25D1/003 ,  C23C18/1605 ,  C23C18/1608 ,  C23C18/165 ,  C23C18/405 ,  C25D5/022 ,  C25D5/10

摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

公开(公告)号：US20050032362A1

公开(公告)日：2005-02-10

申请号：US10841100

申请日：2004-05-07

申请人： Adam Cohen ,  Dennis Smalley ,  Michael Lockard ,  Qui Le

发明人： Adam Cohen ,  Dennis Smalley ,  Michael Lockard ,  Qui Le

IPC分类号： C23C18/16 ,  C25D5/02 ,  C25D5/10 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01L21/288 ,  B33Y10/00 ,  C23C18/1605 ,  C25D5/022 ,  C25D5/10 ,  H01L21/311 ,  H01L21/7682 ,  H01L21/76879

摘要： A method of fabricating three-dimensional structures from a plurality of adhered layers of at least a first and a second material wherein the first material is a conductive material and wherein each of a plurality of layers includes treating a surface of a first material prior to deposition of the second material. The treatment of the surface of the first material either (1) decreases the susceptibility of deposition of the second material onto the surface of the first material or (2) eases or quickens the removal of any second material deposited on the treated surface of the first material. In some embodiments the treatment of the first surface includes forming a dielectric coating over the surface and the second material is electrodeposited (e.g. using an electroplating or electrophoretic process). In other embodiments the first material is coated with a conductive material that doesn't readily accept deposits of electroplated or electroless deposited materials.

摘要翻译： 从至少第一和第二材料的多个粘附层制造三维结构的方法，其中所述第一材料是导电材料，并且其中多个层中的每一个包括在沉积之前处理第一材料的表面 的第二种材料。 第一材料的表面的处理（1）降低了将第二材料沉积到第一材料的表面上的敏感性，或（2）减轻或加快了沉积在第一材料的处理表面上的任何第二材料的去除 材料。 在一些实施例中，第一表面的处理包括在表面上形成电介质涂层，并且第二材料被电沉积（例如使用电镀或电泳工艺）。 在其它实施例中，第一材料涂覆有不容易接受电镀或无电沉积材料沉积物的导电材料。

公开(公告)号：US20060283710A1

公开(公告)日：2006-12-21

申请号：US10272254

申请日：2002-10-15

申请人： Adam Cohen ,  Gang Zhang ,  Qui Le

发明人： Adam Cohen ,  Gang Zhang ,  Qui Le

IPC分类号： C25D5/02

CPC分类号： B81C1/0038 ,  B33Y10/00 ,  B81C1/00619 ,  B81C2201/0197 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10 ,  C25D7/12 ,  C25D17/02 ,  C25D21/14 ,  H01L21/2885 ,  H01L21/76885 ,  H05K3/241

摘要： Various embodiments of the invention provide techniques for forming structures (e.g. HARMS-type structures) via an electrochemical extrusion process. Preferred embodiments perform the extrusion processes via depositions through anodeless conformable contact masks that are initially pressed against substrates that are then progressively pulled away or separated as the depositions thicken. A pattern of deposition may vary over the course of deposition by including more complex relative motion between the mask and the substrate elements. Such complex motion may include rotational components or translational motions having components that are not parallel to an axis of separation. More complex structures may be formed by combining the electrochemical extrusion process with the selective deposition, blanket deposition, planarization, etching, and multi-layer operations of a multi-layer electrochemical fabrication process.

摘要翻译： 本发明的各种实施例提供了通过电化学挤出方法形成结构（例如HARMS型结构）的技术。 优选的实施方案通过沉积通过无阳极适应的接触掩模进行挤出过程，其最初被压在基底上，然后随着沉积增厚逐渐拉开或分离。 沉积图案可以通过在掩模和衬底元件之间包括更复杂的相对运动而在沉积过程中变化。 这种复杂运动可以包括旋转分量或具有不与分离轴平行的分量的平移运动。 可以通过将电化学挤出工艺与多层电化学制造工艺的选择性沉积，覆盖沉积，平坦化，蚀刻和多层操作组合来形成更复杂的结构。

公开(公告)号：US5543599A

公开(公告)日：1996-08-06

申请号：US355584

申请日：1994-12-14

申请人： William G. Cole ,  Jeffrey E. Hydeman ,  James M. Gunsallus, Jr. ,  Qui Le

发明人： William G. Cole ,  Jeffrey E. Hydeman ,  James M. Gunsallus, Jr. ,  Qui Le

IPC分类号： B23H9/00 ,  F22B37/00 ,  B23H1/00 ,  B23H7/26

CPC分类号： B23H9/00 ,  F22B37/003

摘要： Electric discharge machining apparatus and method. An electron discharge machining apparatus and method is provided for precisely machining a wall of a tubular member to form a wall portion thereof defined by a slot of predetermined configuration at a predetermined location in a wall of the tubular member. The tubular member may be a nuclear steam generator tube. The apparatus includes a housing sized to be disposed in the tube, the housing having an opening therethrough capable of being aligned with the predetermined location in the tube wall to be electro-machined. An electrode is housed in the housing for generating an electric discharge arc between the electrode and the wall of the tube in order to machine the slot at the predetermined location. A rotator is connected to the housing for precisely rotating the housing, so that the opening formed through the housing is rotated into registry with the predetermined location to be electro-machined. An extender mechanism housed in the housing is connected to the electrode for precisely extending the electrode through the opening of the housing as the electrode machines the tube wall. As the electrode forms the slot in the wall of the tube, the extender mechanism, which includes a worm gear, gear wheel and threaded axle combination connected to the electrode, precisely advances the electrode to precisely electro-machine the slot in the wall of the tube.

摘要翻译： 放电加工装置及方法。 提供一种电子放电加工装置和方法，用于精确地加工管状构件的壁，以在管状构件的壁中的预定位置处形成由预定构造的狭槽限定的壁部。 管状构件可以是核蒸汽发生器管。 该装置包括尺寸适于设置在管中的壳体，壳体具有穿过其中的开口，其能够与要被电加工的管壁中的预定位置对齐。 电极被容纳在壳体中，用于在电极和管的壁之间产生放电电弧，以便在预定位置加工槽。 旋转器连接到壳体以精确地旋转壳体，使得通过壳体形成的开口旋转成与预定位置对准以进行电加工。 当电极加工管壁时，容纳在壳体中的延伸机构连接到电极，用于将电极精确地延伸穿过壳体的开口。 当电极在管的壁上形成狭槽时，包括连接到电极的蜗轮，齿轮和螺纹轴组合的扩展器机构精确地前进电极以精确地电动机器的壁中的槽 管。