公开(公告)号：US20050199583A1

公开(公告)日：2005-09-15

申请号：US11029218

申请日：2005-01-03

申请人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

发明人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25D5/02 ,  C25D5/10 ,  H01L21/44 ,  H01L21/4763

CPC分类号： C25D1/003 ,  B33Y10/00 ,  C23C18/1605 ,  C23C18/1608 ,  C23C18/1653 ,  C25D5/022 ,  C25D5/10

摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

公开(公告)号：US20050173374A1

公开(公告)日：2005-08-11

申请号：US11029014

申请日：2005-01-03

申请人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

发明人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23C18/16 ,  C23F1/00 ,  C25D5/02 ,  C25D5/10 ,  C25D5/34 ,  H01L21/288 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC分类号： B44C1/22 ,  B33Y10/00 ,  B81C1/00492 ,  C03C15/00 ,  C03C25/68 ,  C23C18/1605 ,  C23C18/161 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/405 ,  C23F1/00 ,  C25D1/003 ,  C25D5/02 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/76885

摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

公开(公告)号：US20050215046A1

公开(公告)日：2005-09-29

申请号：US11029215

申请日：2005-01-03

申请人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

发明人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25D5/02 ,  C25D5/10 ,  H01L21/44 ,  H01L21/4763

CPC分类号： C25D1/20 ,  C23C18/1605 ,  C23C18/1608 ,  C23C18/165 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10

摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

公开(公告)号：US20050194258A1

公开(公告)日：2005-09-08

申请号：US11029179

申请日：2005-01-03

申请人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

发明人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25D5/02 ,  C25D5/10 ,  H01L21/44 ,  H01L21/4763

CPC分类号： C25D1/003 ,  C23C18/1605 ,  C23C18/1608 ,  C23C18/165 ,  C23C18/405 ,  C25D5/022 ,  C25D5/10

摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

公开(公告)号：US20050176238A1

公开(公告)日：2005-08-11

申请号：US11029172

申请日：2005-01-03

申请人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

发明人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25D5/02 ,  C25D5/10 ,  H01L21/44 ,  H01L21/4763

CPC分类号： C25D1/003 ,  C23C18/1605 ,  C23C18/1608 ,  C23C18/165 ,  C23C18/405 ,  C25D5/022 ,  C25D5/10

摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

公开(公告)号：US20050032362A1

公开(公告)日：2005-02-10

申请号：US10841100

申请日：2004-05-07

申请人： Adam Cohen ,  Dennis Smalley ,  Michael Lockard ,  Qui Le

发明人： Adam Cohen ,  Dennis Smalley ,  Michael Lockard ,  Qui Le

IPC分类号： C23C18/16 ,  C25D5/02 ,  C25D5/10 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01L21/288 ,  B33Y10/00 ,  C23C18/1605 ,  C25D5/022 ,  C25D5/10 ,  H01L21/311 ,  H01L21/7682 ,  H01L21/76879

摘要： A method of fabricating three-dimensional structures from a plurality of adhered layers of at least a first and a second material wherein the first material is a conductive material and wherein each of a plurality of layers includes treating a surface of a first material prior to deposition of the second material. The treatment of the surface of the first material either (1) decreases the susceptibility of deposition of the second material onto the surface of the first material or (2) eases or quickens the removal of any second material deposited on the treated surface of the first material. In some embodiments the treatment of the first surface includes forming a dielectric coating over the surface and the second material is electrodeposited (e.g. using an electroplating or electrophoretic process). In other embodiments the first material is coated with a conductive material that doesn't readily accept deposits of electroplated or electroless deposited materials.

摘要翻译： 从至少第一和第二材料的多个粘附层制造三维结构的方法，其中所述第一材料是导电材料，并且其中多个层中的每一个包括在沉积之前处理第一材料的表面 的第二种材料。 第一材料的表面的处理（1）降低了将第二材料沉积到第一材料的表面上的敏感性，或（2）减轻或加快了沉积在第一材料的处理表面上的任何第二材料的去除 材料。 在一些实施例中，第一表面的处理包括在表面上形成电介质涂层，并且第二材料被电沉积（例如使用电镀或电泳工艺）。 在其它实施例中，第一材料涂覆有不容易接受电镀或无电沉积材料沉积物的导电材料。

公开(公告)号：US20070015367A1

公开(公告)日：2007-01-18

申请号：US11523206

申请日：2006-09-19

申请人： Adam Cohen ,  Dennis Smalley ,  Michael Lockard ,  Qui Le

发明人： Adam Cohen ,  Dennis Smalley ,  Michael Lockard ,  Qui Le

IPC分类号： H01L21/311

CPC分类号： H01L21/288 ,  B33Y10/00 ,  C23C18/1605 ,  C25D5/022 ,  C25D5/10 ,  H01L21/311 ,  H01L21/7682 ,  H01L21/76879

摘要： A method of fabricating three-dimensional structures from a plurality of adhered layers of at least a first and a second material wherein the first material is a conductive material and wherein each of a plurality of layers includes treating a surface of a first material prior to deposition of the second material. The treatment of the surface of the first material either (1) decreases the susceptibility of deposition of the second material onto the surface of the first material or (2) eases or quickens the removal of any second material deposited on the treated surface of the first material. In some embodiments the treatment of the first surface includes forming a dielectric coating over the surface and the second material is electrodeposited (e.g. using an electroplating or electrophoretic process). In other embodiments the first material is coated with a conductive material that doesn't readily accept deposits of electroplated or electroless deposited materials.

摘要翻译： 从至少第一和第二材料的多个粘附层制造三维结构的方法，其中所述第一材料是导电材料，并且其中多个层中的每一个包括在沉积之前处理第一材料的表面 的第二种材料。 第一材料的表面的处理（1）降低了将第二材料沉积到第一材料的表面上的敏感性，或（2）减轻或加快了沉积在第一材料的处理表面上的任何第二材料的去除 材料。 在一些实施例中，第一表面的处理包括在表面上形成电介质涂层，并且第二材料被电沉积（例如使用电镀或电泳工艺）。 在其它实施例中，第一材料涂覆有不容易接受电镀或无电沉积材料沉积物的导电材料。

公开(公告)号：US20050230261A1

公开(公告)日：2005-10-20

申请号：US11029216

申请日：2005-01-03

申请人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

发明人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25D5/02 ,  C25D5/10 ,  H01L21/44 ,  H01L21/4763

CPC分类号： C25D1/003 ,  C23C18/1605 ,  C23C18/1608 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/405 ,  C25D5/022 ,  C25D5/10

摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

摘要翻译： 本发明的一些实施例涉及在电介质或部分电介质基底上建立单层或多层结构的技术。 某些实施方案将种子层材料直接沉积到基底材料上，而其它实施例使用中间粘合层材料。 一些实施例使用不同种子层材料和/或用于牺牲和结构导电建筑材料的粘合层材料。 一些实施例将种子层和/或粘合层材料应用于有选择性的方式，而其它实施例以毯子的方式应用材料。 一些实施例通过平面化操作去除外来沉积物（例如沉积到不想要形成层的一部分的区域），而其他实施例通过蚀刻操作去除外来材料。 其它实施方案涉及使用至少一种导电结构材料，至少一种导电牺牲材料和至少一种电介质材料形成的多层中尺度或微结构结构的电化学制造。 在一些实施方案中，电介质材料是可UV固化的光聚合物。

公开(公告)号：US20080105558A1

公开(公告)日：2008-05-08

申请号：US11927680

申请日：2007-10-30

申请人： Adam Cohen ,  Michael Lockard ,  Dennis Smalley ,  Vacit Arat ,  Christopher Bang ,  John Dixon

发明人： Adam Cohen ,  Michael Lockard ,  Dennis Smalley ,  Vacit Arat ,  Christopher Bang ,  John Dixon

IPC分类号： C25D5/10

CPC分类号： B81C1/00293 ,  B81B2201/042 ,  B81C1/00333 ,  B81C2201/0197 ,  B81C2203/0145 ,  C25D1/003 ,  G01P15/0802 ,  G01P15/125 ,  H01P1/202 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00 ,  H01P11/005 ,  H05K3/4647

摘要： In some embodiments, multilayer structures are electrochemically fabricated from at least one structural material (e.g. nickel), at least one sacrificial material (e.g. copper), and at least one sealing material (e.g. solder). In some embodiments, the layered structure is made to have a desired configuration which is at least partially and immediately surrounded by sacrificial material which is in turn surrounded almost entirely by structural material. The surrounding structural material includes openings in the surface through which etchant can attack and remove trapped sacrificial material found within. Sealing material is located near the openings. After removal of the sacrificial material, the box is evacuated or filled with a desired gas or liquid. Thereafter, the sealing material is made to flow, seal the openings, and resolidify. In other embodiments, a post-layer formation lid or other enclosure completing structure is added.

摘要翻译： 在一些实施例中，多层结构由至少一种结构材料（例如镍），至少一种牺牲材料（例如铜）和至少一种密封材料（例如焊料）进行电化学制造。 在一些实施例中，层状结构被制成具有至少部分地且立即被牺牲材料包围的期望构型，牺牲材料又被几乎完全由结构材料包围。 周围的结构材料包括在表面中的开口，蚀刻剂可以通过该开口攻击和去除在其内发现的被捕获的牺牲材料。 密封材料位于开口附近。 在除去牺牲材料之后，将盒子抽空或填充所需的气体或液体。 此后，使密封材料流动，密封开口并重新固化。 在其他实施例中，添加了后层形成盖或其它外壳完成结构。

公开(公告)号：US20070045121A1

公开(公告)日：2007-03-01

申请号：US11435809

申请日：2006-05-16

申请人： Adam Cohen ,  Michael Lockard ,  Dennis Smalley ,  Vacit Arat ,  Christopher Bang ,  John Dixon

发明人： Adam Cohen ,  Michael Lockard ,  Dennis Smalley ,  Vacit Arat ,  Christopher Bang ,  John Dixon

IPC分类号： C25D5/02

CPC分类号： B81C1/00293 ,  B81B2201/042 ,  B81C1/00333 ,  B81C2201/0197 ,  B81C2203/0145 ,  C25D1/003 ,  G01P15/0802 ,  G01P15/125 ,  H01P1/202 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00 ,  H01P11/005 ,  H05K3/4647

摘要： In some embodiments, multilayer structures are electrochemically fabricated from at least one structural material (e.g. nickel), at least one sacrificial material (e.g. copper), and at least one sealing material (e.g. solder). In some embodiments, the layered structure is made to have a desired configuration which is at least partially and immediately surrounded by sacrificial material which is in turn surrounded almost entirely by structural material. The surrounding structural material includes openings in the surface through which etchant can attack and remove trapped sacrificial material found within. Sealing material is located near the openings. After removal of the sacrificial material, the box is evacuated or filled with a desired gas or liquid. Thereafter, the sealing material is made to flow, seal the openings, and resolidify. In other embodiments, a post-layer formation lid or other enclosure completing structure is added.

摘要翻译： 在一些实施例中，多层结构由至少一种结构材料（例如镍），至少一种牺牲材料（例如铜）和至少一种密封材料（例如焊料）进行电化学制造。 在一些实施例中，层状结构被制成具有至少部分地且立即被牺牲材料包围的期望构型，牺牲材料又被几乎完全由结构材料包围。 周围的结构材料包括在表面中的开口，蚀刻剂可以通过该开口攻击和去除在其内发现的被捕获的牺牲材料。 密封材料位于开口附近。 在除去牺牲材料之后，将盒子抽空或填充所需的气体或液体。 此后，使密封材料流动，密封开口并重新固化。 在其他实施例中，添加了后层形成盖或其它外壳完成结构。