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公开(公告)号：US20160264426A1
公开(公告)日：2016-09-15
申请号：US15159454
申请日：2016-05-19
申请人： Air Liquide Advanced Materials, Inc. , L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
发明人： Sean KERRIGAN , Zhiwen WAN , Jean-Marc GIRARD
IPC分类号： C01B33/107
CPC分类号： C01B33/107
摘要： Disclosed are methods of selectively synthesizing inorganic silanes, such as halosilane and dihalosilane, comprising the step of reacting the halide or halogen (i.e., HX or X2 wherein X is Cl, Br, or I) with RSiH3, wherein R is an unsaturated C4 to C8 cyclic hydrocarbon or heterocycle group, provided that a C6 cyclic aromatic includes at least one hydrocarbyl ligand, in the presence of a catalyst, to produce RH and the inorganic silane having the formula SixHaXb, wherein x=1-4; a=1-9; b=1-9; and a+b=2x+2.
摘要翻译： 公开了选择合成无机硅烷如卤代硅烷和二卤代硅烷的方法，包括使卤化物或卤素（即HX或X 2，其中X为Cl，Br或I）与RSiH 3反应的步骤，其中R为不饱和的C4至 C8环状烃基或杂环基团，条件是C6环状芳族化合物在催化剂存在下包含至少一种烃基配位体，以制备RH和具有式SixHaXb的无机硅烷，其中x = 1-4; a = 1-9; b = 1-9; 和a + b = 2x + 2。
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2.发明申请公开(公告)号：US20180072571A1
公开(公告)日：2018-03-15
申请号：US15661412
申请日：2017-07-27
申请人： Air Liquide Advanced Materials Inc. , L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , Air Liquide Electronics U.S. LP , American Air Liquide, Inc. , Air Liquide Advanced Materials LLC
发明人： Antonio SANCHEZ , Gennadiy ITOV , Manish KHANDELWAL , Cole RITTER , Peng ZHANG , Jean-Marc GIRARD , Zhiwen WAN , Glenn KUCHENBEISER , David ORBAN , Sean KERRIGAN , Reno PESARESI , Matthew Damien STEPHENS , Yang WANG , Guillaume HUSSON
IPC分类号： C01B21/087 , C04B35/589 , C04B35/597 , C04B35/14 , C09D1/00 , C01B21/082 , B05D1/02 , B05D1/00 , B05D1/18 , C23C16/24
摘要： Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.
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3.发明申请公开(公告)号：US20200277315A1
公开(公告)日：2020-09-03
申请号：US16871862
申请日：2020-05-11
IPC分类号： C07F7/28 , C23C16/455 , C23C16/14 , C23C16/34
摘要： Titanium-containing film forming compositions comprising titanium halide-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.
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公开(公告)号：US20190330077A1
公开(公告)日：2019-10-31
申请号：US15966924
申请日：2018-04-30
发明人： Feng LI , Sonia PLAZA , Jean-Marc GIRARD , Nicolas BLASCO , Yumin LIU
摘要： Conditioning of tungsten pentachloride to form specific crystalline phases is disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.
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5.发明申请HAFNIUM-CONTAINING FILM FORMING COMPOSITIONS FOR VAPOR DEPOSITION OF HAFNIUM-CONTAINING FILMS 审中-公开含铪膜的成膜组合物用于含铪膜的蒸气沉积公开(公告)号：US20170044664A1
公开(公告)日：2017-02-16
申请号：US15337765
申请日：2016-10-28
发明人： Christian DUSSARRAT , Jean-Marc GIRARD , Hana ISHII , Clément LANSALOT-MATRAS , Julien LIEFFRIG
CPC分类号： C23C16/40 , C07F7/30 , C23C16/405 , C23C16/45525 , H01L21/02181 , H01L21/02274 , H01L21/0228 , H01L28/40
摘要： Disclosed are Hafnium-containing film forming compositions comprising Germanium- and Hafnium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed compositions and using the same to deposit Hafnium-containing films on substrates via vapor deposition processes.
摘要翻译： 其中每个R 1，R 2，R 3，R 4，R 5，R 6，R 7，R 8，R 9和R 10独立地选自H; C1-C5直链，支链或环状烷基; 和C 1 -C 5直链，支链或环状氟代烷基。 还公开了合成所公开的组合物并使用其的方法来通过气相沉积工艺在基底上沉积含铪膜。
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6.发明申请公开(公告)号：US20210198429A1
公开(公告)日：2021-07-01
申请号：US16731728
申请日：2019-12-31
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
发明人： Yumin LIU , Jean-Marc GIRARD , Peng ZHANG , Fan QIN , Gennadiy ITOV , Fabrizio MARCHEGIANI , Thomas J. LARRABEE
摘要： Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH2— moieties, either as terminal groups (—SiH3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C1-C6 linear, branched, or cyclic alkyl- group, a C1-C6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.
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公开(公告)号：US20200373148A1
公开(公告)日：2020-11-26
申请号：US16718369
申请日：2019-12-18
发明人： Naoto NODA , Ivan OSHCHEPKOV , Jean-Marc GIRARD
IPC分类号： H01L21/02 , C23C16/455 , C23C16/34 , C23C16/30
摘要： Disclosed is a method for forming Si-containing films, such as SiN film, by PEALD using trisilylamine (TSA) at ultralow temperature, such as a temperature below 250° C.
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8.发明申请公开(公告)号：US20190161507A1
公开(公告)日：2019-05-30
申请号：US15968099
申请日：2018-05-01
IPC分类号： C07F7/28 , C23C16/14 , C23C16/455
摘要： Titanium-containing film forming compositions comprising titanium halide-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.
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公开(公告)号：US20170186597A1
公开(公告)日：2017-06-29
申请号：US15459158
申请日：2017-03-15
发明人： Jean-Marc GIRARD , Changhee KO , Ivan OSHCHEPKOV , Kazutaka YANAGITA , Shingo OKUBO , Naoto NODA , Julien GATINEAU
IPC分类号： H01L21/02
CPC分类号： H01L21/0228 , C23C16/24 , C23C16/325 , C23C16/345 , C23C16/36 , C23C16/402 , C23C16/45553 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02208 , H01L21/02211 , H01L21/02236 , H01L21/02247 , H01L21/02271 , H01L21/02274 , H01L21/02277 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/32055
摘要： Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.
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10.发明申请公开(公告)号：US20230095074A1
公开(公告)日：2023-03-30
申请号：US17977619
申请日：2022-10-31
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
发明人： Yumin LIU , Jean-Marc GIRARD , Peng ZHANG , Fan QIN , Gennadiy ITOV , Fabrizio MARCHEGIANI , Thomas J. LARRABEE , Venkateswara R. PALLEM
IPC分类号： C09D183/14
摘要： A method of forming a gap filling on a substrate, the substrate having gaps formed therein, comprises: producing a gap filling polycarbosilazane polymer or oligomer by a polymerization of a reaction mixture of carbosilanes with amines; forming a solution containing the gap filling polycarbosilazane polymer or oligomer; and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to fill the gaps in the substrate forming the silicon and carbon containing gap filling, wherein a concentration of the gap filling polycarbosilazane polymer or oligomer in the solution ranges from 1 to 60 wt %.
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