利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

26 条记录 (耗时 0.028 秒)

    Bonding of target tiles to backing plate with patterned bonding agent
    1.
    发明授权
    Bonding of target tiles to backing plate with patterned bonding agent 失效
    目标瓦片与带有图案化粘合剂的背板接合

    公开(公告)号：US07644745B2

    公开(公告)日：2010-01-12

    申请号：US11146763

    申请日：2005-06-06

    申请人： Hien-Minh Huu Le ,  Akihiro Hosokawa

    发明人： Hien-Minh Huu Le ,  Akihiro Hosokawa

    IPC分类号： C23C14/35

    CPC分类号： C23C14/3407 ,  H01J37/3435 ,  Y10T29/49856 ,  Y10T29/49863 ,  Y10T29/49865 ,  Y10T29/49885

    摘要： A target assembly including a plurality of target tiles bonded to a backing plate by adhesive, for example of indium or conductive polymer, filled into recesses in the backing plate formed beneath each of the target tiles. A sole peripheral recess formed as a rectangular close band may be formed inside the tile periphery. Additional recesses may be formed inside the peripheral recess, preferably symmetrically arranged about perpendicular bisectors of rectangular tiles. The depth and width of the recesses may be varied to control the amount of stress and the stress direction.

    摘要翻译： 包括通过粘合剂（例如铟或导电聚合物）粘合到背板的多个目标瓦片的目标组件填充到形成在每个目标瓦片下方的背板中的凹部中。 形成为矩形紧密带的唯一周边凹部可以形成在瓷砖周边内。 可以在周边凹部内部形成附加的凹槽，优选地围绕矩形瓦片的垂直平分线对称地布置。 可以改变凹部的深度和宽度以控制应力和应力方向的量。

    Multiple target tiles with complementary beveled edges forming a slanted gap therebetween
    2.
    发明授权
    Multiple target tiles with complementary beveled edges forming a slanted gap therebetween 有权
    具有互补的倾斜边缘的多个目标瓦片在它们之间形成倾斜的间隙

    公开(公告)号：US07316763B2

    公开(公告)日：2008-01-08

    申请号：US11137262

    申请日：2005-05-24

    申请人： Akihiro Hosokawa ,  Hien-Minh Huu Le

    发明人： Akihiro Hosokawa ,  Hien-Minh Huu Le

    IPC分类号： C23C14/35

    CPC分类号： C23C14/3407

    摘要： A target assembly composed of multiple target tiles bonded in an array to a backing plate of another material. The edges of the tile within the interior of the array are formed with complementary beveled edges to form slanted gaps between the tiles. The gaps may slant at an angle of between 10° and 55°, preferably 15° and 45°, with respect to the target normal. The facing sides of tiles may be roughened by bead blasting, for both perpendicular and sloping gaps. The area of the backing plate underlying the gap may be roughened or may coated or overlain with a region of the material of the target, for both perpendicular and sloping gaps.

    摘要翻译： 由多个靶阵列组成的目标组件，其以阵列的形式结合到另一材料的背板上。 在阵列内部的瓦片的边缘形成有互补的斜边以在瓦片之间形成倾斜的间隙。 间隙可以相对于目标法线在10°至55°之间，优选15°和45°的角度倾斜。 对于垂直和倾斜的间隙，瓷砖的面对侧可以通过珠粒喷砂粗糙化。 对于垂直和倾斜的间隙，在间隙下面的背板的区域可以被粗糙化或者可以涂覆或覆盖靶材料的区域。

    Sputtering target tiles having structured edges separated by a gap
    3.
    发明申请
    Sputtering target tiles having structured edges separated by a gap 审中-公开
    具有由间隙分隔的结构化边缘的溅射靶砖

    公开(公告)号：US20060266639A1

    公开(公告)日：2006-11-30

    申请号：US11414016

    申请日：2006-04-28

    申请人： Hien-Minh Huu Le ,  Bradley Stimson ,  Akihiro Hosokawa

    发明人： Hien-Minh Huu Le ,  Bradley Stimson ,  Akihiro Hosokawa

    IPC分类号： C23C14/32 ,  C23C14/00

    CPC分类号： C23C14/3407 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3491

    摘要： A target assembly composed of multiple target tiles bonded in an array to a backing plate of another material. The edges of the tile within the interior of the array are formed with complementary structure edges to form a gap between the tiles having at least a portion that is inclined to the target normal. The gap may be simply beveled and slant at an angle of between 10° and 55°, preferably 15° and 50°, with respect to the target normal or they may be convolute with one portion horizontal or otherwise inclined to prevent a line of sight from the bottom to top. The area of the backing plate underlying the gap may be coated or overlain with a foil of the material of the target, for both perpendicular and sloping gaps, and have a polymeric foil adjacent an elastomeric bonding layer to exclude bonding material from the gap.

    摘要翻译： 由多个靶阵列组成的目标组件，其以阵列的形式结合到另一材料的背板上。 在阵列内部的瓦片的边缘形成有互补的结构边缘，以在具有至少一部分倾斜于目标法线的瓦片之间形成间隙。 间隙可以简单地倾斜并相对于目标法线倾斜10°至55°，优选15°和50°之间的角度，或者它们可以与一部分水平或以其它方式倾斜以防止视线 从下到上。 在间隙下面的背板的区域可以对于垂直和倾斜的间隙进行涂覆或覆盖靶的材料的箔，并且具有邻近弹性体粘结层的聚合物箔，以从间隙排除粘合材料。

    Method for forming transparent conductive oxide
    4.
    发明授权
    Method for forming transparent conductive oxide 有权
    形成透明导电氧化物的方法

    公开(公告)号：US08361835B2

    公开(公告)日：2013-01-29

    申请号：US12748790

    申请日：2010-03-29

    申请人： Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

    发明人： Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

    IPC分类号： H01L21/00

    CPC分类号： C23C14/086 ,  C23C14/541 ,  C23C14/56 ,  C23C14/5846 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/548

    摘要： Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

    摘要翻译： 本文公开的实施例通常涉及在衬底上沉积透明导电氧化物层的工艺。 透明氧化物层有时沉积在衬底上，以供以后用于太阳能电池器件中。 可以通过冷溅射工艺沉积透明导电氧化物层。 换句话说，在溅射过程中，在处理室中点燃等离子体，其自然地加热基板。 在诸如从感受器的沉积期间不会向衬底提供额外的热量。 在沉积透明导电氧化物层之后，可以以任何顺序对衬底进行退火和蚀刻，以对透明导电氧化物层进行纹理化。 为了调整纹理的形状，可以使用不同的湿蚀刻化学物质。 可以使用不同的蚀刻化学物质来形成透明导电氧化物的表面和蚀刻速率。

    Forming metal silicide on silicon-containing features of a substrate
    6.
    发明授权
    Forming metal silicide on silicon-containing features of a substrate 失效
    在基底的含硅特征上形成金属硅化物

    公开(公告)号：US07485556B2

    公开(公告)日：2009-02-03

    申请号：US11084450

    申请日：2005-03-18

    申请人： Jeong Soo Byun ,  Jianxin Lei ,  Lisa Yang ,  Hien-Minh Huu Le

    发明人： Jeong Soo Byun ,  Jianxin Lei ,  Lisa Yang ,  Hien-Minh Huu Le

    IPC分类号： H01L21/28

    CPC分类号： C23C14/165 ,  H01L21/28518 ,  H01L21/2855 ,  H01L29/665 ,  H01L29/78

    摘要： A metal silicide layer is formed on silicon-containing features of a substrate in a chamber. A metal film is sputter deposited on the substrate and a portion of the sputter deposited metal film is silicided. In the process, sputtering gas is energized by applying an electrical bias potential across the metal sputtering target and the substrate support to sputter deposit metal from a target onto the substrate. At least a portion of the deposited sputtered metal is silicided by heating the substrate to a silicidation temperature exceeding about 200° C. to form a combined sputtered metal and metal silicide layer on the substrate. The remaining sputtered metal can be silicided by maintaining the substrate at the silicidation temperature to form the metal silicide layer.

    摘要翻译： 在室中的衬底的含硅特征上形成金属硅化物层。 金属膜被溅射沉积在衬底上，溅射沉积的金属膜的一部分被硅化。 在该过程中，溅射气体通过在金属溅射靶和衬底支撑件上施加电偏压来激发，以将金属从靶溅射到衬底上。 沉积的溅射金属的至少一部分通过将衬底加热到​​超过约200℃的硅化温度来硅化，以在衬底上形成组合的溅射金属和金属硅化物层。 剩余的溅射金属可以通过将衬底保持在硅化温度下来硅化，形成金属硅化物层。

    Remote plasma clean process with cycled high and low pressure clean steps
    8.
    发明授权
    Remote plasma clean process with cycled high and low pressure clean steps 失效
    远程等离子清洁工艺，循环高低压清洁步骤

    公开(公告)号：US07967913B2

    公开(公告)日：2011-06-28

    申请号：US12508381

    申请日：2009-07-23

    申请人： Zhong Qiang Hua ,  Sanjay Kamath ,  Young S. Lee ,  Ellie Y. Yieh ,  Hien-Minh Huu Le ,  Anjana M. Patel ,  Sudhir R. Gondhalekar

    发明人： Zhong Qiang Hua ,  Sanjay Kamath ,  Young S. Lee ,  Ellie Y. Yieh ,  Hien-Minh Huu Le ,  Anjana M. Patel ,  Sudhir R. Gondhalekar

    IPC分类号： B08B6/00

    CPC分类号： B08B7/0035 ,  C23C16/4405

    摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.

    摘要翻译： 一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不需要的沉积物。 在一个实施例中，将衬底转移出衬底处理室，并且将含氟蚀刻剂气体的流引入形成反应性物质的远程等离子体源中。 产生反应物质从远程等离子体源到基底处理室的连续流动，同时重复高低压清洁步骤的循环。 在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。 在低压清洁步骤期间，将反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

    Solar Cell Substrate and Methods of Manufacture
    9.
    发明申请
    Solar Cell Substrate and Methods of Manufacture 审中-公开
    太阳能电池基板和制造方法

    公开(公告)号：US20100313945A1

    公开(公告)日：2010-12-16

    申请号：US12196001

    申请日：2008-08-21

    申请人： Hien-Minh Huu Le ,  David Tanner

    发明人： Hien-Minh Huu Le ,  David Tanner

    IPC分类号： H01L31/0224 ,  H01L21/18

    CPC分类号： H01L31/022425 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/056 ,  H01L31/1888 ,  Y02E10/52

    摘要： Photovoltaic cells and methods for making photovoltaic cells are described. The methods include disposing an intermediate layer within the back contact at a thickness that does not negatively impact reflection or transmission of light through the solar cell. The intermediate layer prevents peeling of metal from the back contact during laser scribing.

    摘要翻译： 描述了用于制造光伏电池的光伏电池和方法。 所述方法包括以不负面影响通过太阳能电池的光的反射或透射的厚度来设置背面接触中的中间层。 中间层在激光划线期间防止金属从背面接触剥离。