公开(公告)号：US20120267340A1

公开(公告)日：2012-10-25

申请号：US13420723

申请日：2012-03-15

申请人： Akinobu KAKIMOTO ,  Satoshi Takagi ,  Toshiyuki Ikeuchi ,  Katsuhiko Komori ,  Kazuhide Hasebe

发明人： Akinobu KAKIMOTO ,  Satoshi Takagi ,  Toshiyuki Ikeuchi ,  Katsuhiko Komori ,  Kazuhide Hasebe

IPC分类号： B44C1/22 ,  B05C11/00

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/45546 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32779 ,  H01L21/02337 ,  H01L21/31116 ,  H01L21/67109

摘要： A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching.

摘要翻译： 所公开的膜沉积方法包括加载多个基板的步骤，每个基板在支架的形式的反应室中包括包括凹部的图案; 通过向所述反应室供给含硅气体和含氧气体，在所述多个基板上沉积氧化硅膜; 在通过向反应室供给含氟气体和氨气的沉积步骤中蚀刻沉积在多个基板上的氧化硅膜; 并且交替地重复沉积步骤和蚀刻步骤。

公开(公告)号：US09005459B2

公开(公告)日：2015-04-14

申请号：US13420723

申请日：2012-03-15

申请人： Akinobu Kakimoto ,  Satoshi Takagi ,  Toshiyuki Ikeuchi ,  Katsuhiko Komori ,  Kazuhide Hasebe

发明人： Akinobu Kakimoto ,  Satoshi Takagi ,  Toshiyuki Ikeuchi ,  Katsuhiko Komori ,  Kazuhide Hasebe

IPC分类号： B44C1/22 ,  B05C11/00 ,  H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/45546 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32779 ,  H01L21/02337 ,  H01L21/31116 ,  H01L21/67109

摘要： A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching.

摘要翻译： 所公开的膜沉积方法包括加载多个基板的步骤，每个基板在支架的形式的反应室中包括包括凹部的图案; 通过向所述反应室供给含硅气体和含氧气体，在所述多个基板上沉积氧化硅膜; 在通过向反应室供给含氟气体和氨气的沉积步骤中蚀刻沉积在多个基板上的氧化硅膜; 并且交替地重复沉积步骤和蚀刻步骤。

公开(公告)号：US08945339B2

公开(公告)日：2015-02-03

申请号：US13283869

申请日：2011-10-28

申请人： Akinobu Kakimoto ,  Katsuhiko Komori ,  Kazuhide Hasebe

发明人： Akinobu Kakimoto ,  Katsuhiko Komori ,  Kazuhide Hasebe

IPC分类号： C23C16/52 ,  C23C16/455 ,  C23C16/22 ,  H01L21/306 ,  C23F1/00 ,  H01L21/02 ,  C23C16/02 ,  C23C16/04 ,  C23C16/24 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  C23C16/458 ,  C23C16/46

CPC分类号： H01L21/02057 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/24 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76876 ,  H01L21/76877 ,  H01L29/41766

摘要： A film formation apparatus includes a gas supply mechanism for supplying an aminosilane-based gas, and a silane-based gas that does not include an amino group. Processes of forming a seed layer on a surface of the insulation film having the opening reaching the conductive substance and on a bottom surface of the opening by supplying the aminosilane-based gas into the process chamber, and forming a silicon film on the seed layer by supplying the silane-based gas that does not include the amino group into the process chamber, are sequentially performed in the process chamber.

摘要翻译： 成膜装置包括用于供给氨基硅烷气体的气体供给机构和不包含氨基的硅烷系气体。 在具有开口到达导电物质的绝缘膜的表面上和在开口的底面上形成种子层的工艺，通过将氨基硅烷基气体供应到处理室中，并通过在晶种层上形成硅膜 将不含氨基的硅烷类气体供给到处理室中，在处理室中依次进行。

公开(公告)号：US20090104760A1

公开(公告)日：2009-04-23

申请号：US12341642

申请日：2008-12-22

申请人： Masaki KUROKAWA ,  Katsuhiko Komori ,  Norifumi Kimura ,  Kazuhide Hasebe ,  Takehiko Fujita ,  Akitake Tamura ,  Yoshikazu Furusawa

发明人： Masaki KUROKAWA ,  Katsuhiko Komori ,  Norifumi Kimura ,  Kazuhide Hasebe ,  Takehiko Fujita ,  Akitake Tamura ,  Yoshikazu Furusawa

IPC分类号： H01L21/205

CPC分类号： C23C16/22 ,  C23C16/45578

摘要： A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.

摘要翻译： 布置垂直CVD装置以一起处理多个目标基板以形成硅锗膜。 该装置包括反应容器，其具有被配置为容纳目标基板的过程区域，以及配置成将混合气体供应到过程区域中的公共供应系统。 混合气体包括硅烷族的第一工艺气体和锗族的第二工艺气体。 共同供应系统包括设置在不同高度的多个供应口。

公开(公告)号：US07273818B2

公开(公告)日：2007-09-25

申请号：US10965819

申请日：2004-10-18

申请人： Masaki Kurokawa ,  Norifumi Kimura ,  Takehiko Fujita ,  Yoshikazu Furusawa ,  Katsuhiko Komori ,  Kazuhide Hasebe

发明人： Masaki Kurokawa ,  Norifumi Kimura ,  Takehiko Fujita ,  Yoshikazu Furusawa ,  Katsuhiko Komori ,  Kazuhide Hasebe

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： C23C16/0272 ,  C23C16/24 ,  C23C16/42 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2807 ,  H01L21/324 ,  H01L29/4966

摘要： In a film-formation method for a semiconductor process, a silicon germanium film is formed on a target substrate by CVD in a process field within a reaction container. Then, a silicon coating film is formed to cover the silicon germanium film by CVD in the process field, while increasing temperature of the process field from the first temperature to a second temperature. Then, a silicon film is formed on the coating film by CVD in the process field.

摘要翻译： 在半导体工艺的成膜方法中，在反应容器内的工艺场中通过CVD在靶基板上形成硅锗膜。 然后，在工艺领域中通过CVD覆盖硅锗膜，同时将工艺场的温度从第一温度升至第二温度。 然后，通过CVD法在涂膜上形成硅膜。

公开(公告)号：US07648895B2

公开(公告)日：2010-01-19

申请号：US12341642

申请日：2008-12-22

申请人： Masaki Kurokawa ,  Katsuhiko Komori ,  Norifumi Kimura ,  Kazuhide Hasebe ,  Takehiko Fujita ,  Akitake Tamura ,  Yoshikazu Furusawa

发明人： Masaki Kurokawa ,  Katsuhiko Komori ,  Norifumi Kimura ,  Kazuhide Hasebe ,  Takehiko Fujita ,  Akitake Tamura ,  Yoshikazu Furusawa

IPC分类号： H01L21/00

CPC分类号： C23C16/22 ,  C23C16/45578

摘要： A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.

摘要翻译： 布置垂直CVD装置以一起处理多个目标基板以形成硅锗膜。 该装置包括反应容器，其具有被配置为容纳目标基板的过程区域，以及配置成将混合气体供应到过程区域中的公共供应系统。 混合气体包括硅烷族的第一工艺气体和锗族的第二工艺气体。 共同供应系统包括设置在不同高度的多个供应口。

公开(公告)号：US20050181586A1

公开(公告)日：2005-08-18

申请号：US10965789

申请日：2004-10-18

申请人： Masaki Kurokawa ,  Katsuhiko Komori ,  Norifumi Kimura ,  Kazuhide Hasebe ,  Takehiko Fujita ,  Akitake Tamura ,  Yoshikazu Furusawa

发明人： Masaki Kurokawa ,  Katsuhiko Komori ,  Norifumi Kimura ,  Kazuhide Hasebe ,  Takehiko Fujita ,  Akitake Tamura ,  Yoshikazu Furusawa

IPC分类号： C23C16/42 ,  C23C16/22 ,  C23C16/455 ,  H01L21/205 ,  H01L21/265 ,  H01L21/285

CPC分类号： C23C16/22 ,  C23C16/45578

摘要： A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.

摘要翻译： 布置垂直CVD装置以一起处理多个目标基板以形成硅锗膜。 该装置包括反应容器，其具有被配置为容纳目标基板的过程区域，以及配置成将混合气体供应到过程区域中的公共供应系统。 混合气体包括硅烷族的第一工艺气体和锗族的第二工艺气体。 共同供应系统包括设置在不同高度的多个供应口。

公开(公告)号：US20050170617A1

公开(公告)日：2005-08-04

申请号：US10965819

申请日：2004-10-18

申请人： Masaki Kurokawa ,  Norifumi Kimura ,  Takehiko Fujita ,  Yoshikazu Furusawa ,  Katsuhiko Komori ,  Kazuhide Hasebe

发明人： Masaki Kurokawa ,  Norifumi Kimura ,  Takehiko Fujita ,  Yoshikazu Furusawa ,  Katsuhiko Komori ,  Kazuhide Hasebe

IPC分类号： C23C16/02 ,  C23C16/24 ,  C23C16/42 ,  C23C16/56 ,  H01L21/205 ,  H01L21/28 ,  H01L21/324 ,  H01L29/49 ,  C30B1/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： C23C16/0272 ,  C23C16/24 ,  C23C16/42 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2807 ,  H01L21/324 ,  H01L29/4966

摘要： In a film-formation method for a semiconductor process, a silicon germanium film is formed on a target substrate by CVD in a process field within a reaction container. Then, a silicon coating film is formed to cover the silicon germanium film by CVD in the process field, while increasing temperature of the process field from the first temperature to a second temperature. Then, a silicon film is formed on the coating film by CVD in the process field.

摘要翻译： 在半导体工艺的成膜方法中，在反应容器内的工艺场中通过CVD在靶基板上形成硅锗膜。 然后，在工艺领域中通过CVD覆盖硅锗膜，同时将工艺场的温度从第一温度升至第二温度。 然后，通过CVD法在涂膜上形成硅膜。

公开(公告)号：US5695528A

公开(公告)日：1997-12-09

申请号：US659765

申请日：1996-06-06

申请人： Katsuhiko Komori ,  Akira Saito ,  Seiji Shimura

发明人： Katsuhiko Komori ,  Akira Saito ,  Seiji Shimura

IPC分类号： D06M13/192 ,  D06M13/203 ,  D06M13/285 ,  D06M13/00

CPC分类号： D06M13/285 ,  D06M13/192 ,  D06M13/203 ,  D06M13/2035 ,  D06M2101/06

摘要： A treating agent for cellulosic textile materials includes a water-soluble phosphonium salt of phosphorus-containing oxoacid and polycarboxylic acid as active ingredients, and a process of treating cellulosic textile materials uses the treating agent. The treating agent eliminates the necessity of the use of a substance releasing formaldehyde during wash and wear treatment and enables non-formaldehyde wash and wear treatment, and the cellulosic textile material treated by the treating agent is completely free from formaldehyde, retains enough of the strength thereof, and undergoes neither discoloration nor fibrillation.

摘要翻译： 纤维素纺织品的处理剂包括含磷含氧酸的水溶性鏻盐和多元羧酸作为活性成分，处理纤维素纺织品的方法使用处理剂。 处理剂消除了在洗涤和磨损处理期间使用释放甲醛的物质的必要性，并且能够进行非甲醛洗涤和磨损处理，并且由处理剂处理的纤维素纺织材料完全不含甲醛，保留足够的强度 并且既不发生变色也不起纤维化。