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公开(公告)号：US20120267340A1
公开(公告)日：2012-10-25
申请号：US13420723
申请日：2012-03-15
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/45546 , H01J37/32091 , H01J37/3244 , H01J37/32779 , H01L21/02337 , H01L21/31116 , H01L21/67109
摘要： A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching.
摘要翻译： 所公开的膜沉积方法包括加载多个基板的步骤，每个基板在支架的形式的反应室中包括包括凹部的图案; 通过向所述反应室供给含硅气体和含氧气体，在所述多个基板上沉积氧化硅膜; 在通过向反应室供给含氟气体和氨气的沉积步骤中蚀刻沉积在多个基板上的氧化硅膜; 并且交替地重复沉积步骤和蚀刻步骤。
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公开(公告)号：US09005459B2
公开(公告)日：2015-04-14
申请号：US13420723
申请日：2012-03-15
IPC分类号： B44C1/22 , B05C11/00 , H01L21/02 , C23C16/04 , C23C16/455 , H01J37/32 , H01L21/311 , H01L21/67
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/45546 , H01J37/32091 , H01J37/3244 , H01J37/32779 , H01L21/02337 , H01L21/31116 , H01L21/67109
摘要： A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching.
摘要翻译： 所公开的膜沉积方法包括加载多个基板的步骤，每个基板在支架的形式的反应室中包括包括凹部的图案; 通过向所述反应室供给含硅气体和含氧气体，在所述多个基板上沉积氧化硅膜; 在通过向反应室供给含氟气体和氨气的沉积步骤中蚀刻沉积在多个基板上的氧化硅膜; 并且交替地重复沉积步骤和蚀刻步骤。
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公开(公告)号：US08945339B2
公开(公告)日：2015-02-03
申请号：US13283869
申请日：2011-10-28
IPC分类号： C23C16/52 , C23C16/455 , C23C16/22 , H01L21/306 , C23F1/00 , H01L21/02 , C23C16/02 , C23C16/04 , C23C16/24 , H01L21/285 , H01L21/3065 , H01L21/3213 , H01L21/768 , C23C16/458 , C23C16/46
CPC分类号： H01L21/02057 , C23C16/0272 , C23C16/045 , C23C16/24 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/28525 , H01L21/28556 , H01L21/3065 , H01L21/32135 , H01L21/76805 , H01L21/76814 , H01L21/76876 , H01L21/76877 , H01L29/41766
摘要： A film formation apparatus includes a gas supply mechanism for supplying an aminosilane-based gas, and a silane-based gas that does not include an amino group. Processes of forming a seed layer on a surface of the insulation film having the opening reaching the conductive substance and on a bottom surface of the opening by supplying the aminosilane-based gas into the process chamber, and forming a silicon film on the seed layer by supplying the silane-based gas that does not include the amino group into the process chamber, are sequentially performed in the process chamber.
摘要翻译： 成膜装置包括用于供给氨基硅烷气体的气体供给机构和不包含氨基的硅烷系气体。 在具有开口到达导电物质的绝缘膜的表面上和在开口的底面上形成种子层的工艺，通过将氨基硅烷基气体供应到处理室中，并通过在晶种层上形成硅膜 将不含氨基的硅烷类气体供给到处理室中，在处理室中依次进行。
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公开(公告)号：US08586448B2
公开(公告)日：2013-11-19
申请号：US13537622
申请日：2012-06-29
IPC分类号： H01L21/76
CPC分类号： C23C16/24 , C23C16/045 , C23C16/45523 , H01L21/28556 , H01L21/32055 , H01L21/76876 , H01L21/76877
摘要： Provided is a method and apparatus for forming a silicon film, which are capable of suppressing generation of a void or seam. The method includes performing a first film-forming process, performing an etching process, performing a doping process, and performing a second film-forming process. In the first film-forming process, a non-doped silicon film that is not doped with an impurity is formed so as to embed a groove of an object. In the etching process, the non-doped silicon film formed via the first film-forming process is etched. In the doping process, the non-doped silicon film etched via the etching process is doped with an impurity. In the second film-forming process, an impurity-doped silicon film is formed so as to embed the silicon film doped via the doping process.
摘要翻译： 提供一种能够抑制空隙或接缝的产生的用于形成硅膜的方法和装置。 该方法包括进行第一成膜处理，进行蚀刻处理，进行掺杂工序，以及进行第二成膜工序。 在第一成膜工艺中，形成未掺杂有杂质的非掺杂硅膜，从而嵌入物体的凹槽。 在蚀刻工艺中，蚀刻经由第一成膜工艺形成的非掺杂硅膜。 在掺杂工艺中，通过蚀刻工艺蚀刻的非掺杂硅膜掺杂有杂质。 在第二成膜工艺中，形成杂质掺杂硅膜，以便嵌入通过掺杂工艺掺杂的硅膜。
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公开(公告)号：US20130005142A1
公开(公告)日：2013-01-03
申请号：US13537622
申请日：2012-06-29
IPC分类号： H01L21/283
CPC分类号： C23C16/24 , C23C16/045 , C23C16/45523 , H01L21/28556 , H01L21/32055 , H01L21/76876 , H01L21/76877
摘要： Provided is a method and apparatus for forming a silicon film, which are capable of suppressing generation of a void or seam. The method includes performing a first film-forming process, performing an etching process, performing a doping process, and performing a second film-forming process. In the first film-forming process, a non-doped silicon film that is not doped with an impurity is formed so as to embed a groove of an object. In the etching process, the non-doped silicon film formed via the first film-forming process is etched. In the doping process, the non-doped silicon film etched via the etching process is doped with an impurity. In the second film-forming process, an impurity-doped silicon film is formed so as to embed the silicon film doped via the doping process.
摘要翻译： 提供一种能够抑制空隙或接缝的产生的用于形成硅膜的方法和装置。 该方法包括进行第一成膜处理，进行蚀刻处理，进行掺杂工序，以及进行第二成膜工序。 在第一成膜工艺中，形成未掺杂有杂质的非掺杂硅膜，从而嵌入物体的凹槽。 在蚀刻工艺中，蚀刻经由第一成膜工艺形成的非掺杂硅膜。 在掺杂工艺中，通过蚀刻工艺蚀刻的非掺杂硅膜掺杂有杂质。 在第二成膜工艺中，形成杂质掺杂硅膜，以便嵌入通过掺杂工艺掺杂的硅膜。
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6.发明授权公开(公告)号：US09006021B2
公开(公告)日：2015-04-14
申请号：US13094043
申请日：2011-04-26
CPC分类号： H01L21/76843 , C23C16/0272 , C23C16/24 , C23C16/52 , H01L21/76876
摘要： The amorphous silicon film formation method includes forming a seed layer on the surface of a base by heating the base and flowing aminosilane-based gas onto the heated base; and forming an amorphous silicon film on the seed layer by heating the base, supplying silane-based gas containing no amino group onto the seed layer on the surface of the heated base, and thermally decomposing the silane-based gas containing no amino group.
摘要翻译： 非晶硅膜形成方法包括通过加热基底并将氨基硅烷基气体流动到加热的基底上在基底的表面上形成籽晶层; 通过加热基底，在加热的基体的表面上的种子层上供给不含氨基的硅烷系气体，将不含氨基的硅烷类气体进行热分解，在种子层上形成非晶硅膜。
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公开(公告)号：US08728957B2
公开(公告)日：2014-05-20
申请号：US13095503
申请日：2011-04-27
申请人： Kazuhide Hasebe , Akinobu Kakimoto
发明人： Kazuhide Hasebe , Akinobu Kakimoto
CPC分类号： H01L21/02636 , C23C16/22 , C23C16/24 , C23C16/45525 , C23C16/481 , H01L21/02425 , H01L21/0243 , H01L21/0245 , H01L21/02491 , H01L21/02502 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02592 , H01L21/0262
摘要： A thin film formation method to form a silicon film containing an impurity on a surface of an object to be processed in a process chamber that allows vacuum exhaust includes alternately and repeatedly performing a first gas supply process in which a silane-based gas composed of silicon and hydrogen is supplied into the process chamber in a state that the silane-based gas is adsorbed onto the surface of the object to be processed and a second gas supply process in which an impurity-containing gas is supplied into the process chamber, to form an amorphous silicon film containing an impurity. Accordingly, an amorphous silicon film containing an impurity having good filling characteristics can be formed even at a relatively low temperature.
摘要翻译： 在允许真空排气的处理室中形成在待处理物体的表面上含有杂质的硅膜的薄膜形成方法包括交替地和反复地进行第一气体供给处理，其中由硅构成的硅烷系气体 并且将氢气以硅烷类气体吸附在待处理物体的表面上的状态供给至处理室，第二气体供给工序将含有杂质的气体供给至处理室，形成 含有杂质的非晶硅膜。 因此，即使在相对较低的温度下也可以形成含有具有良好填充特性的杂质的非晶硅膜。
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公开(公告)号：US20110269315A1
公开(公告)日：2011-11-03
申请号：US13095503
申请日：2011-04-27
申请人： Kazuhide Hasebe , Akinobu Kakimoto
发明人： Kazuhide Hasebe , Akinobu Kakimoto
IPC分类号： H01L21/18 , C23C16/52 , C23C16/46 , C23C16/455 , C23C16/458
CPC分类号： H01L21/02636 , C23C16/22 , C23C16/24 , C23C16/45525 , C23C16/481 , H01L21/02425 , H01L21/0243 , H01L21/0245 , H01L21/02491 , H01L21/02502 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02592 , H01L21/0262
摘要： A thin film formation method to form a silicon film containing an impurity on a surface of an object to be processed in a process chamber that allows vacuum exhaust includes alternately and repeatedly performing a first gas supply process in which a silane-based gas composed of silicon and hydrogen is supplied into the process chamber in a state that the silane-based gas is adsorbed onto the surface of the object to be processed and a second gas supply process in which an impurity-containing gas is supplied into the process chamber, to form an amorphous silicon film containing an impurity. Accordingly, an amorphous silicon film containing an impurity having good filling characteristics can be formed even at a relatively low temperature.
摘要翻译： 在允许真空排气的处理室中形成在待处理物体的表面上含有杂质的硅膜的薄膜形成方法包括交替地和反复地进行第一气体供给处理，其中由硅构成的硅烷系气体 并且将氢气以硅烷类气体吸附在待处理物体的表面上的状态供给至处理室，第二气体供给工序将含有杂质的气体供给至处理室，形成 含有杂质的非晶硅膜。 因此，即使在相对较低的温度下也可以形成含有具有良好填充特性的杂质的非晶硅膜。
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公开(公告)号：US20090104760A1
公开(公告)日：2009-04-23
申请号：US12341642
申请日：2008-12-22
申请人： Masaki KUROKAWA , Katsuhiko Komori , Norifumi Kimura , Kazuhide Hasebe , Takehiko Fujita , Akitake Tamura , Yoshikazu Furusawa
发明人： Masaki KUROKAWA , Katsuhiko Komori , Norifumi Kimura , Kazuhide Hasebe , Takehiko Fujita , Akitake Tamura , Yoshikazu Furusawa
IPC分类号： H01L21/205
CPC分类号： C23C16/22 , C23C16/45578
摘要： A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.
摘要翻译： 布置垂直CVD装置以一起处理多个目标基板以形成硅锗膜。 该装置包括反应容器，其具有被配置为容纳目标基板的过程区域，以及配置成将混合气体供应到过程区域中的公共供应系统。 混合气体包括硅烷族的第一工艺气体和锗族的第二工艺气体。 共同供应系统包括设置在不同高度的多个供应口。
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公开(公告)号：US07125811B2
公开(公告)日：2006-10-24
申请号：US10924853
申请日：2004-08-25
IPC分类号： H01L21/31
CPC分类号： C23C8/16 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidation method for a semiconductor process, which oxidizes a surface of a target substrate, includes heating a process container that accommodates the target substrate, and supplying hydrogen gas and oxygen gas into the process container while exhausting the process container. The oxidation method also includes causing the hydrogen gas and the oxygen gas to react with each other in the process container at a process temperature and a process pressure to generate water vapor, and oxidizing the surface of the target substrate by the water vapor. The process pressure is set at 2000 Pa (15 Torr) or more.
摘要翻译： 用于对目标基板的表面进行氧化的半导体工艺的氧化方法包括加热容纳目标基板的处理容器，并且在排出处理容器的同时将氢气和氧气供给到处理容器中。 氧化方法还包括使氢气和氧气在处理容器中在处理温度和工艺压力下彼此反应以产生水蒸汽，并通过水蒸汽氧化目标基底的表面。 工艺压力设定为2000Pa（15Torr）以上。
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