公开(公告)号：US20130043128A1

公开(公告)日：2013-02-21

申请号：US13583417

申请日：2011-03-08

申请人： Akinori Ebe ,  Masanori Watanabe

发明人： Akinori Ebe ,  Masanori Watanabe

IPC分类号： C23C14/34

CPC分类号： C23C14/3407 ,  C23C14/3464 ,  H01J37/34 ,  H01J37/3488

摘要： The present invention aims at providing a sputtering system capable of efficiently generating high-density plasma near the surface of a sputter target and forming a film at a high rate. It also aims at providing a large-area sputtering system and a plasma processing system having a simple structure and allowing the sputter target to be easily attached/detached, maintained, or operated otherwise. The present invention provides a sputtering system in which an inductively-coupled antenna conductor plate is attached to a portion of a vacuum chamber, wherein: a sputter target plate is attached to the inductively-coupled antenna conductor on its plasma formation space side; one end of the antenna conductor is connected to a radio-frequency power source; and the other end is grounded through a capacitor. A plurality of antenna conductors may be provided to form a large-area sputtering system.

摘要翻译： 本发明的目的在于提供一种溅射系统，其能够在溅射靶的表面附近有效地生成高密度等离子体并以高速率形成膜。 它还旨在提供具有简单结构的大面积溅射系统和等离子体处理系统，并且允许溅射靶容易地附接/分离，维持或操作。 本发明提供一种溅射系统，其中感应耦合的天线导体板附着在真空室的一部分上，其中：溅射靶板安装在其等离子体形成空间侧的电感耦合天线导体上; 天线导体的一端连接到射频电源; 另一端通过电容器接地。 可以提供多个天线导体以形成大面积溅射系统。

公开(公告)号：US08917022B2

公开(公告)日：2014-12-23

申请号：US12993640

申请日：2009-05-21

申请人： Akinori Ebe ,  Yasunori Ando ,  Masanori Watanabe

发明人： Akinori Ebe ,  Yasunori Ando ,  Masanori Watanabe

IPC分类号： H01J7/24 ,  H05H1/46 ,  H01J37/32

CPC分类号： H05H1/46 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/3266

摘要： A flange, which forms a portion of a vacuum container, has a rectangular opening surrounded by an insulating frame. A plate-shaped radio-frequency antenna conductor 13 is provided so as to cover the opening, with the insulating frame clamped thereby. In this structure, a radio-frequency power source is connected via a matching box to one end along the length of the radio-frequency antenna conductor, the other end is connected to ground, and electric power is supplied so that a radio-frequency current flows from one end of the radio-frequency antenna conductor to the other. By this method, the impedance of the radio-frequency antenna conductor can be lowered, and high-density plasma with a low electron temperature can be efficiently generated.

摘要翻译： 形成真空容器的一部分的凸缘具有由绝缘框架包围的矩形开口。 设置板状射频天线导体13，以覆盖开口，绝缘框被夹持。 在这种结构中，射频电源经由匹配盒连接到沿着射频天线导体的长度的一端，另一端连接到地，并且提供电力使得射频电流 从射频天线导体的一端流向另一端。 通过该方法，可以降低射频天线导体的阻抗，能够有效地产生电子温度低的高密度等离子体。

公开(公告)号：US20140150975A1

公开(公告)日：2014-06-05

申请号：US13820876

申请日：2010-09-06

申请人： Akinori Ebe ,  Masanori Watanabe

发明人： Akinori Ebe ,  Masanori Watanabe

IPC分类号： H01J37/32

CPC分类号： H01J37/32082 ,  H01J37/3211 ,  H05H1/46 ,  H05H2001/4652

摘要： The present invention provides an internal antenna type plasma processing device which is easily maintained and capable of producing stable plasma. The plasma processing device has a plurality of antenna units 20 provided in the top wall 111 of a vacuum chamber 11. Each of the antenna units 20 includes: a dielectric housing 21 provided to protrude into the vacuum chamber 11 from the top wall 111 of the vacuum chamber 11; a cover 22 having a second gas discharge port 25 for discharging the atmosphere in the housing to the outside of the vacuum chamber; and a radio-frequency antenna 23 formed by a conductor tube which is fixed to the cover 22 by way of a feedthrough 24 and has gas passage holes 232 in its tube walls. An inert gas is supplied into the tube of the radio-frequency antenna 23, and the inside of the housing 21 is filled with the inert gas provided through the gas passage holes 232. The inert gas is discharged to the outside of the vacuum chamber 11 through the second gas discharge port 25.

摘要翻译： 本发明提供一种易于维护并能够产生稳定等离子体的内部天线型等离子体处理装置。 等离子体处理装置具有设置在真空室11的顶壁111中的多个天线单元20.每个天线单元20包括：电介质壳体21，其被设置为从顶壁111突出到真空室11中 真空室11; 具有用于将壳体中的气氛排出到真空室的外部的第二气体排出口25的盖22; 以及由导体管形成的射频天线23，该导体管通过馈通24固定到盖22，并且在其管壁中具有气体通过孔232。 惰性气体被供给到射频天线23的管中，并且壳体21的内部填充有通过气体通过孔232提供的惰性气体。惰性气体被排出到真空室11的外部 通过第二气体排出口25。

公开(公告)号：US20110115380A1

公开(公告)日：2011-05-19

申请号：US12993640

申请日：2009-05-21

申请人： Akinori Ebe ,  Yasunori Ando ,  Masanori Watanabe

发明人： Akinori Ebe ,  Yasunori Ando ,  Masanori Watanabe

IPC分类号： H05H1/46 ,  H05H1/24

CPC分类号： H05H1/46 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/3266

摘要： A flange, which forms a portion of a vacuum container, has a rectangular opening surrounded by an insulating frame. A plate-shaped radio-frequency antenna conductor 13 is provided so as to cover the opening, with the insulating frame clamped thereby. In this structure, a radio-frequency power source is connected via a matching box to one end along the length of the radio-frequency antenna conductor, the other end is connected to ground, and electric power is supplied so that a radio-frequency current flows from one end of the radio-frequency antenna conductor to the other. By this method, the impedance of the radio-frequency antenna conductor can be lowered, and high-density plasma with a low electron temperature can be efficiently generated.

摘要翻译： 形成真空容器的一部分的凸缘具有由绝缘框架包围的矩形开口。 设置板状射频天线导体13，以覆盖开口，绝缘框被夹持。 在这种结构中，射频电源经由匹配盒连接到沿着射频天线导体的长度的一端，另一端连接到地，并且提供电力使得射频电流 从射频天线导体的一端流向另一端。 通过该方法，可以降低射频天线导体的阻抗，能够有效地产生电子温度低的高密度等离子体。

公开(公告)号：US09078336B2

公开(公告)日：2015-07-07

申请号：US12921063

申请日：2009-03-03

申请人： Yuichi Setsuhara ,  Akinori Ebe

发明人： Yuichi Setsuhara ,  Akinori Ebe

IPC分类号： H01Q1/36 ,  H05H1/46 ,  H01J37/32

CPC分类号： H05H1/46 ,  H01J37/321 ,  H01J37/3211

摘要： The present invention aims at providing a radio-frequency antenna unit capable of generating a high-density discharge plasma in a vacuum chamber. The radio-frequency antenna unit according to the present invention includes: a radio-frequency antenna through which a radio-frequency electric current can flow; a protective tube made of an insulator provided around the portion of the radio-frequency antenna that is in the vacuum chamber; and a buffer area provided between the radio-frequency antenna and the protective tube. The “buffer area” refers to an area where an acceleration of electrons is suppressed, and it can be formed, for example, with a vacuum or an insulator. Such a configuration can suppress an occurrence of an electric discharge between the antenna and the protective tube, enabling the generation of a high-density discharge plasma in the vacuum chamber.

摘要翻译： 本发明旨在提供一种能够在真空室中产生高密度放电等离子体的射频天线单元。 根据本发明的射频天线单元包括：射频电天线可以流过的射频天线; 由位于真空室内的射频天线部分周围设置的保护管， 以及设置在射频天线与保护管之间的缓冲区。 “缓冲区”是指抑制电子加速的区域，例如可以用真空或绝缘体形成。 这样的结构可以抑制天线与保护管之间的放电的发生，能够在真空室中产生高密度放电等离子体。

公开(公告)号：US08916034B2

公开(公告)日：2014-12-23

申请号：US13059318

申请日：2009-08-25

申请人： Yuichi Setsuhara ,  Akinori Ebe ,  Jeon Geon Han

发明人： Yuichi Setsuhara ,  Akinori Ebe ,  Jeon Geon Han

IPC分类号： C23C14/35 ,  H01J37/34 ,  H01J37/32 ,  C23C14/34

CPC分类号： H01J37/3408 ,  C23C14/3407 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3411 ,  H01J37/3417

摘要： A thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system includes: a vacuum container; a target holder located inside the vacuum container; a target holder located inside the vacuum container; a substrate holder opposed to the target holder; a power source for applying a voltage between the target holder and the substrate holder; a magnetron-sputtering magnet provided behind the target holder, for generating a magnetic field having a component parallel to a target; and radio-frequency antennae for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target where the magnetic field generated by the magnetron-sputtering magnet has a strength equal to or higher than a predetermined level. The radio-frequency inductively-coupled plasma generated by the radio-frequency antennae promotes the supply of electrons into the aforementioned magnetic field, so that the sputtering process can be performed at a high rate.

摘要翻译： 能够高速溅射工艺的薄膜形成溅射系统。 薄膜形成溅射系统包括：真空容器; 位于真空容器内的目标支架; 位于真空容器内的目标支架; 与靶保持器相对的衬底保持器; 用于在所述目标保持器和所述基板保持器之间施加电压的电源; 设置在目标支架后面的磁控溅射磁体，用于产生具有平行于目标的分量的磁场; 以及用于在由磁控溅射磁体产生的磁场具有等于或高于预定水平的强度的目标附近的空间内产生射频感应耦合等离子体的射频天线。 由射频天线产生的射频感应耦合等离子体促进电子向上述磁场的供给，从而可以高速率进行溅射处理。

公开(公告)号：US20120031562A1

公开(公告)日：2012-02-09

申请号：US13255200

申请日：2010-03-10

申请人： Yuichi Setsuhara ,  Akinori Ebe

发明人： Yuichi Setsuhara ,  Akinori Ebe

IPC分类号： C23F1/08

CPC分类号： H01J37/321 ,  H01J37/3211 ,  H01J37/32477 ,  H05H1/46 ,  H05H2001/4667

摘要： The present invention provides a plasma processing device capable of inducing a strong radio-frequency electric field within a vacuum container while preventing sputtering of the antenna conductor, an increase in the temperature of the antenna conductor and the formation of particles. A plasma processing device according to the present invention includes a vacuum container, a radio-frequency antenna placed between an inner surface and an outer surface of a wall of the vacuum container, and a dielectric separating member for separating the radio-frequency antenna from an internal space of the vacuum container. As compared to a device using an external antenna, the present device can induce a stronger magnetic field in the vacuum container. The separating member has the effects of preventing the radio-frequency antenna from undergoing sputtering by the plasma produced in the vacuum container, suppressing an increase in the temperature of the radio-frequency antenna, and preventing the formation of particles.

摘要翻译： 本发明提供一种等离子体处理装置，其能够在防止天线导体的溅射，天线导体的温度升高和颗粒的形成的同时在真空容器内产生强的射频电场。 根据本发明的等离子体处理装置包括真空容器，放置在真空容器的壁的内表面和外表面之间的射频天线以及用于将射频天线与 真空容器的内部空间。 与使用外部天线的装置相比，本装置可以在真空容器中引起更强的磁场。 分离部件具有防止射频天线由真空容器内产生的等离子体进行溅射，抑制高频天线的温度上升，防止形成粒子的效果。

公开(公告)号：US5496772A

公开(公告)日：1996-03-05

申请号：US892380

申请日：1992-06-04

申请人： Akinori Ebe ,  Kiyoshi Ogata ,  Satoshi Nishiyama

发明人： Akinori Ebe ,  Kiyoshi Ogata ,  Satoshi Nishiyama

IPC分类号： H01L21/48 ,  H05K1/00 ,  H05K3/02 ,  H05K3/38 ,  H01L21/44

CPC分类号： H05K3/388 ,  H01L21/4846 ,  H05K1/0393 ,  H05K2201/2063 ,  H05K3/022

摘要： A film carrier type substrate includes a film made of organic high molecular substance, a metal layer formed over the film by depositing metal vapor and irradiating nitrogen gas ions on the film and a mixing layer made of a mixture of the materials of both the metal layer and the film formed in the interface between the metal layer and the film. Prior to forming the metal layer, inert gas ions and/or nitrogen gas ions may be irradiated on the film in advance.

摘要翻译： 膜载体型基板包括由有机高分子物质制成的膜，通过沉积金属蒸气并在膜上照射氮气离子在该膜上形成的金属层和由金属层的材料的混合物制成的混合层 并且在金属层和膜之间的界面中形成膜。 在形成金属层之前，可以预先将惰性气体离子和/或氮气离子照射在膜上。

公开(公告)号：US20130192759A1

公开(公告)日：2013-08-01

申请号：US13813602

申请日：2011-08-02

申请人： Yuichi Setsuhara ,  Akinori Ebe

发明人： Yuichi Setsuhara ,  Akinori Ebe

IPC分类号： H01L21/02 ,  H01L21/465

CPC分类号： H01L21/02104 ,  C23C16/24 ,  C23C16/509 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32834 ,  H01J37/32899 ,  H01J37/32954 ,  H01L21/465 ,  H05H1/46 ,  H05H2001/4667

摘要： A plasma processing device according to the present invention includes a plasma processing chamber, a plasma producing chamber communicating with the plasma processing chamber, a radio-frequency antenna for producing plasma, a plasma control plate for controlling the energy of electrons in the plasma, as well as an operation rod and a moving mechanism for regulating the position of the plasma control plate. In this plasma processing device, the energy distribution of the electrons of the plasma produced in the plasma producing chamber can be controlled by regulating the distance between the radio-frequency antenna 16 and the plasma control plate by simply moving the operation rod in its longitudinal direction by the moving mechanism. Therefore, a plasma process suitable for the kind of gas molecules to be dissociated and/or their dissociation energy can be easily performed.

摘要翻译： 根据本发明的等离子体处理装置包括等离子体处理室，与等离子体处理室连通的等离子体产生室，用于产生等离子体的射频天线，用于控制等离子体中的电子能量的等离子体控制板，如 以及用于调节等离子体控制板的位置的操作杆和移动机构。 在该等离子体处理装置中，等离子体生成室中产生的等离子体的电子的能量分布可以通过简单地使操作杆沿其纵向移动来调节射频天线16和等离子体控制板之间的距离来控制 通过移动机制。 因此，可以容易地进行适合于要离解的气体分子种类和/或其解离能的等离子体工艺。

公开(公告)号：US20110080094A1

公开(公告)日：2011-04-07

申请号：US12921063

申请日：2009-03-03

申请人： Yuichi Setsuhara ,  Akinori Ebe

发明人： Yuichi Setsuhara ,  Akinori Ebe

IPC分类号： H01J7/24

CPC分类号： H05H1/46 ,  H01J37/321 ,  H01J37/3211

摘要： The present invention aims at providing a radio-frequency antenna unit capable of generating a high-density discharge plasma in a vacuum chamber. The radio-frequency antenna unit according to the present invention includes: a radio-frequency antenna through which a radio-frequency electric current can flow; a protective tube made of an insulator provided around the portion of the radio-frequency antenna that is in the vacuum chamber; and a buffer area provided between the radio-frequency antenna and the protective tube. The “buffer area” refers to an area where an acceleration of electrons is suppressed, and it can be formed, for example, with a vacuum or an insulator. Such a configuration can suppress an occurrence of an electric discharge between the antenna and the protective tube, enabling the generation of a high-density discharge plasma in the vacuum chamber.

摘要翻译： 本发明旨在提供一种能够在真空室中产生高密度放电等离子体的射频天线单元。 根据本发明的射频天线单元包括：射频电天线可以流过的射频天线; 由位于真空室内的射频天线部分周围设置的保护管， 以及设置在射频天线与保护管之间的缓冲区。 “缓冲区”是指电子加速度被抑制的区域，例如可以用真空或绝缘体形成。 这样的结构可以抑制天线与保护管之间的放电的发生，能够在真空室中产生高密度放电等离子体。