摘要:
A surface termination of a compound semiconductor is provided wherein conditions are provided for a pristine surface to be retained in an unpinned condition and a surface layer of a non-metallic material is provided. A GaAs substrate is heated in an oxygen-free atmosphere at high temperature with hydrogen sulfide, producing a pristine surface with a coating of gallium sulfide covered with a 1,000 nanometer covering of low temperature plasma enhanced chemical vapor deposited silicon dioxide.
摘要:
A process for defining small dimensions by forming a vertical step in an etchable material; edge depositing a masking material by angularly evaporating a metal; and etching away all of the first material not covered by the masking material; and device obtained by depositing source, drain, and gate defining material.
摘要:
In a transistor structure a buried gate positioned in the layer above a conduction channel and below a broad gate which overlaps the source and drain, when the voltages applied to the buried gate and the overlapping gate are varied independently, a potential well between two barriers can be established which permits conduction by the physical mechanism of resonant transmission. The potential well between two barriers required for the resonant transmission mechanism is achieved in one structure by a buried gate under an overlapping gate with both width and separation dimension control and in a second structure using split-buried gate under an overlapping gate that is embossed in the region of the split gate. With gate and separation dimensions of the order of 1000 .ANG. switching speeds of the order of 10.sup.-12 seconds are achieved.
摘要:
A method for the fabrication of a gallium arsenide (GaAs) metal-semiconductor field effect transistor (MESFET) is described. The method requires the step of providing a semi-insulating GaAs substrate having thereon a layer of n doped GaAs and another layer of n+ doped Ga.sub.1-x Al.sub.x As, the latter being used as a diffusion source for n dopants in selectively doping the n GaAs layer underneath. The fabrication method further includes the step of employing highly directional reactive ion etching on silicon nitride to build insulating side walls thereby to effect the self-alignment of the gate of the MESFET with respect to its source and drain. GaAs MESFET fabricated using this method has its source and drain in close proximity having its gate therebetween. Utilizing the disclosed method, conventional photolithographic techniques can be employed to produce submicron self-aligned GaAs MESFETs.
摘要翻译:描述了制造砷化镓(GaAs)金属 - 半导体场效应晶体管(MESFET)的方法。 该方法需要提供半绝缘GaAs衬底,其上具有n个掺杂GaAs的层和另一层n +掺杂的Ga 1-x Al x As,后者被用作n掺杂剂在下面的n个GaAs层中选择性掺杂的扩散源 。 该制造方法还包括在氮化硅上采用高度定向的反应离子蚀刻来构建绝缘侧壁的步骤,从而相对于其源极和漏极实现MESFET的栅极的自对准。 使用该方法制造的GaAs MESFET的源极和漏极在其间具有栅极。 利用所公开的方法,可以采用常规光刻技术来产生亚微米自对准GaAs MESFET。
摘要:
A high aspect ratio collimating mask for use in ion beam epitaxy or ion implantation doping is formed through the use of damage-trail-forming materials which are irradiated through a mask and then etched. The high aspect ratio is obtained in part by the sequential formation of a plurality of spaced mask plates. The mask is useful in producing large scale integrated circuits by ion implantation during epitaxial growth of a crystal wafer.
摘要:
A quantum well type signal translating device is constructed by providing an appendage in which a reflected wave can be employed to introduce constructive or destructive interference in electron wave conduction at the heterojunction.
摘要:
An interferometer is constructed by providing a bifurcated branch conductive path coplanar with a heterojunction in a semiconductor with a band discontinuity that produces a potential well so that electron wave conduction at the heterojunction can be locally influence with an electric field applied to one branch of the bifurcated path.
摘要:
The invention is a three-terminal transistor structure having five layers of materials that in combination provide conduction by high mobility carrier transport across the base in an energy valley above the conduction band. The conduction is by majority carrier tunneling injection from the emitter and transport at an upper valley level across the base. The resulting structure is capable of switching in times of 10.sup.-12 seconds.