公开(公告)号：US4238686A

公开(公告)日：1980-12-09

申请号：US72366

申请日：1979-09-05

申请人： Aland K. Chin ,  Gilbert Y. Chin ,  Henryk Temkin

发明人： Aland K. Chin ,  Gilbert Y. Chin ,  Henryk Temkin

IPC分类号： G01N27/00 ,  G01Q30/02 ,  G01Q30/04 ,  G01R31/265 ,  A61K27/02

CPC分类号： G01R31/2653

摘要： Localized nonuniformities in semiconductor crystals are analyzed by scanning the semiconductor surface with an electron beam and detecting and analyzing the radiation that is generated at the semiconductor surface by the electron beam and which passes through the semiconductor crystal.

摘要翻译： 通过用电子束扫描半导体表面来分析半导体晶体中的局部不均匀性，并通过电子束检测和分析在半导体表面处产生并穿过半导体晶体的辐射。

公开(公告)号：US4447822A

公开(公告)日：1984-05-08

申请号：US304175

申请日：1981-09-21

申请人： Aland K. Chin ,  Michael A. DiGiuseppe ,  Henryk Temkin

发明人： Aland K. Chin ,  Michael A. DiGiuseppe ,  Henryk Temkin

IPC分类号： H01L33/00 ,  H01L33/02 ,  H01L33/14 ,  H01L33/38

CPC分类号： H01L33/38 ,  H01L33/0025 ,  H01L33/02 ,  H01L33/14

摘要： A light emitting diode designed to emit primarily at 1.3 microns comprises a crystal having a plurality of lattice matched layers including an n-type indium phosphide front surface layer, an n-type indium phosphide buffer layer, a p-type indium gallium arsenide phosphide active layer, a p-type indium phosphide confining layer and an indium gallium arsenide back surface layer, and an annular front contact and a limited area back contact to the crystal.

摘要翻译： 设计为以1.3微米为单位发射的发光二极管包括具有多个晶格匹配层的晶体，包括n型磷化铟前表面层，n型磷化铟缓冲层，p型砷化铟镓磷化物活性物质 p型磷化铟封闭层和砷化铟镓背面层，以及环状前接触和与晶体有限区域的背接触。

公开(公告)号：US4510514A

公开(公告)日：1985-04-09

申请号：US521443

申请日：1983-08-08

申请人： Irfan Camlibel ,  Aland K. Chin

发明人： Irfan Camlibel ,  Aland K. Chin

IPC分类号： H01L29/45 ,  H01L31/0224 ,  H01L31/10 ,  H01L33/02 ,  H01L33/30 ,  H01L33/38 ,  H01L33/40 ,  H01L23/54

CPC分类号： H01L33/40 ,  H01L24/05 ,  H01L29/452 ,  H01L31/022416 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L33/02 ,  H01L33/30 ,  H01L33/38

摘要： Disclosed is an indium-containing semiconductor device which includes an ohmic contact formed by application of successive layers of Au-Sn-Cr-Au. The combination of Sn and Cr layers provides an effective barrier to the diffusion of indium to the surface of the contact so that bonding to the contact is not impeded.

摘要翻译： 公开了含铟半导体器件，其包括通过施加连续的Au-Sn-Cr-Au层形成的欧姆接触。 Sn和Cr层的组合提供了将铟扩散到接触表面的有效屏障，使得不会阻碍与接触的接合。

公开(公告)号：US5204927A

公开(公告)日：1993-04-20

申请号：US844216

申请日：1992-03-02

申请人： Aland K. Chin ,  Jeffrey E. Bisberg

发明人： Aland K. Chin ,  Jeffrey E. Bisberg

IPC分类号： G02B6/38 ,  G02B6/42

CPC分类号： G02B6/4249 ,  G02B6/3839 ,  G02B6/4204 ,  Y10S359/90

摘要： In one embodiment, a process for manufacturing an optical fiber coupler of the invention utilizes a rotating drum that has a sloted portion or stacking slot for receiving multiple lengths of fiber in a stack. A support for the input ends of the fibers is in the form of a block which is secured to the surface of the drum in spaced relation with the slot. The block has a plurality of shallow, parallel spaced apart grooves in parallel alignment with the stacking slot. An end of the fiber is initially threaded preferably into the stacking slot and then sequentially located alternately in vacant grooves in the support. As the drum is rotated, a positioner operates to move the fiber transversely in the direction parallel to the drum axis so as to align the fiber in each respective one of the grooves and the slot for each rotation of the drum. The process continues until all the grooves are all occupied and the stacking slot is filled with a corresponding number of fiber lengths. The stacked output ends of the fibers are secured together by an appropriate adhesive and the input ends of the fibers are likewise secured in the grooves of the block by an appropriate adhesive. The fibers are severed at the input and output ends to allow for removal of one or more devices from the drum. The invention also includes the apparatus for performing the process and the resulting optical fiber coupler.

摘要翻译： 在一个实施例中，本发明的光纤耦合器的制造方法利用旋转滚筒，该旋转滚筒具有用于在堆叠中接收多束纤维的折边部分或堆叠槽。 对于纤维的输入端的支撑件是以与槽成间隔开的方式固定到滚筒表面的块的形式。 该块具有与堆叠槽平行对准的多个浅的，平行的间隔开的槽。 纤维的端部最初被优选地插入到堆叠槽中，然后顺序地定位在支撑件中的空槽中。 当滚筒旋转时，定位器操作以沿着平行于鼓轴线的方向横向移动纤维，以便在滚筒的每个旋转中将纤维对准在每个相应的一个槽和槽中。 该过程一直持续到所有的凹槽全部被占用，并且堆叠槽被填充相应数量的光纤长度。 纤维的堆叠输出端通过适当的粘合剂固定在一起，并且纤维的输入端同样通过适当的粘合剂固定在块的凹槽中。 纤维在输入和输出端被切断，以允许一个或多个装置从滚筒中移出。 本发明还包括用于执行处理的装置和由此产生的光纤耦合器。

公开(公告)号：US4714518A

公开(公告)日：1987-12-22

申请号：US3317

申请日：1987-01-14

申请人： Arumugam Satyanarayan ,  Aland K. Chin

发明人： Arumugam Satyanarayan ,  Aland K. Chin

IPC分类号： H01L21/283 ,  H01L21/285 ,  H01L21/311 ,  H01L21/314 ,  H01L21/318 ,  H01L33/00 ,  B44C1/22

CPC分类号： H01L21/314 ,  H01L21/28575 ,  H01L21/31116 ,  H01L21/3185

摘要： A method for providing a dual layer diffusion mask or encapsulation coating for use with III-V compound semiconductors, the dual layer coating comprising an inner layer of silicon which closely matches the coefficient of thermal expansion of the III-V compound semiconductor and an outer layer of silicon nitride which is relatively impermeable to subsequent metallization and for thereafter applying metallized contacts to the III-V compound semiconductor through selectively etched openings in the diffusion mask or encapsulation coating.

公开(公告)号：US10120151B1

公开(公告)日：2018-11-06

申请号：US14640863

申请日：2015-03-06

申请人： Aland K. Chin ,  Richard H. Chin ,  Alan Nelson

发明人： Aland K. Chin ,  Richard H. Chin ,  Alan Nelson

IPC分类号： G02B6/42 ,  G02B6/38

摘要： A cooling device includes a thermally conductive object having an opening configured to receive an optical component, the opening being configured such that the optical component is thermally and optically operationally connected to the thermally conductive and electrically conductive object. One or more cooling components, microchannel coolers in one instance, are also thermally operationally connected to the thermally conductive and electrically conductive object. Methods of use are disclosed.

公开(公告)号：US4847119A

公开(公告)日：1989-07-11

申请号：US79583

申请日：1987-07-30

申请人： Aland K. Chin ,  John W. Ford, Jr. ,  Siamak Forouhar

发明人： Aland K. Chin ,  John W. Ford, Jr. ,  Siamak Forouhar

IPC分类号： B05C13/02 ,  G03F7/16 ,  H01L21/687

CPC分类号： G03F7/16 ,  B05C13/02 ,  H01L21/68707 ,  Y10T29/49998

摘要： There is disclosed a method and apparatus for easily mounting, holding and facilitating the coating of preselected areas of very thin semiconductor samples. The apparatus includes a base adapted for placement in a coating chamber. The base includes a pair of spaced apart supporting arms onto which a plurality of stacked samples can be loaded. A cover is then slidably positioned over the stacked samples to hold the stacked samples in position during coating. The cover in conjunction with the supporting arms define an open sided cavity to enable the samples to be coated. The apparatus also can be used to hold only one sample.

摘要翻译： 公开了一种用于容易地安装，保持和促进非常薄的半导体样品的预选区域的涂覆的方法和装置。 该装置包括适于放置在涂布室中的底座。 底座包括一对间隔开的支撑臂，多个堆叠的样品可以在其上装载。 然后将覆盖物可滑动地定位在堆叠的样品之上，以在涂覆期间将堆叠的样品保持在适当的位置。 与支撑臂结合的盖限定了敞开的侧面空腔，以使样品能够被涂覆。 该装置也可用于仅容纳一个样品。

公开(公告)号：US4749255A

公开(公告)日：1988-06-07

申请号：US806492

申请日：1985-12-09

申请人： Utpal K. Chakrabarti ,  Aland K. Chin ,  George J. Przybylek ,  LeGrand G. Van Uitert ,  George J. Zydzik

发明人： Utpal K. Chakrabarti ,  Aland K. Chin ,  George J. Przybylek ,  LeGrand G. Van Uitert ,  George J. Zydzik

IPC分类号： H01L31/0264 ,  C23C14/08 ,  C23C14/30 ,  G02B1/11 ,  H01L21/314 ,  H01L21/316 ,  H01L31/04 ,  H01L33/00 ,  H01S5/00 ,  H01S5/028 ,  G02B1/10

CPC分类号： H01S5/028 ,  C23C14/083 ,  C23C14/30 ,  G02B1/113

摘要： Disclosed is a device including a surface coating for passivation or anti-reflection, and a method of manufacture. The coating comprises ZrO.sub.2 doped with yttrium, magnesium or calcium. The doped ZrO.sub.2 is preferably deposited on the device surface by electron-beam evaporation from a single crystal source of ZrO.sub.2 and Y.sub.2 O.sub.3, MgO or CaO.

摘要翻译： 公开了一种包括用于钝化或抗反射的表面涂层的装置及其制造方法。 该涂层包含掺杂有钇，镁或钙的ZrO 2。 掺杂的ZrO 2优选通过从ZrO 2和Y 2 O 3，MgO或CaO的单晶源的电子束蒸发沉积在器件表面上。

公开(公告)号：US4605942A

公开(公告)日：1986-08-12

申请号：US658568

申请日：1984-10-09

申请人： Irfan Camlibel ,  Aland K. Chin ,  Brymer H. Chin

发明人： Irfan Camlibel ,  Aland K. Chin ,  Brymer H. Chin

IPC分类号： G02B6/42 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01S5/00 ,  H01S5/02 ,  H01S5/40 ,  H01S3/19

CPC分类号： H01L33/0016 ,  G02B6/423 ,  G02B6/4249 ,  H01L25/0756 ,  H01L27/15 ,  H01L2924/0002

摘要： Presented is a dual wavelength structure wherein two edge-emitting devices are bonded with p-regions adjacent. The bonding medium is a conductive compound that forms a common electrode between the devices. Each device is separately addressable. Efficient coupling of emitted light into a single fiber is accomplished by restricting the vertical and horizontal separation of the light emitting stripes.

摘要翻译： 提出了双波长结构，其中两个边缘发射器件与邻近的p-区结合。 接合介质是在器件之间形成公共电极的导电化合物。 每个设备可单独寻址。 通过限制发光条纹的垂直和水平间隔来实现将发射的光有效地耦合到单个光纤中。

公开(公告)号：US4443809A

公开(公告)日：1984-04-17

申请号：US402921

申请日：1982-07-29

申请人： Aland K. Chin ,  Bulusu V. Dutt

发明人： Aland K. Chin ,  Bulusu V. Dutt

IPC分类号： H01L31/0304 ,  H01L31/105 ,  H01L29/161

CPC分类号： H01L31/0304 ,  H01L31/105 ,  Y02E10/544

摘要： Photodiodes (10) are fabricated in a single step diffusion process which exploits the characteristic of certain acceptors to form an anomalous diffusion profile (VI) including shallow and deep fronts (VIa and b) joined by an upwardly concave segment (VIc). By performing this type of diffusion into a low-doped n.sup.- -type body (12) with a carrier concentration (VII) below that of the concave segment, a p.sup.+ -p.sup.- junction (15) is formed at the depth of the concave segment and a p.sup.- -n.sup.- junction (17) is formed at a greater depth. The zone (16) between the junctions is at least partially depleted and forms the active region of a p.sup.+ -p.sup.- -n.sup.- photodiode. Specifically described are InP:Cd photodiodes.

摘要翻译： 光电二极管（10）以单步扩散工艺制造，其利用某些受体的特性形成包括通过向上凹的段（VIc）连接的浅和深的前部（VIa和b）的异常扩散分布（VI）。 通过将这种类型的扩散进行到具有低于凹形段的载流子浓度（VII）的低掺杂n型体（12）中，在凹部的深度处形成p + - - 结（15） 段和p-n-结（17）形成在更大的深度。 结之间的区域（16）至少部分耗尽并形成p + -p-n-光电二极管的有源区。 具体描述了InP：Cd光电二极管。