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公开(公告)号：US20140053779A1
公开(公告)日：2014-02-27
申请号：US13591498
申请日：2012-08-22
CPC分类号： C23C16/45525 , C23C16/52
摘要： The invention is directed to QCM measurements in monitoring ALD processes. Previously, significant barriers remain in the ALD processes and accurate execution. To turn this exclusively dedicated in situ technique into a routine characterization method, an integral QCM fixture was developed. This new design is easily implemented on a variety of ALD tools, allows rapid sample exchange, prevents backside deposition, and minimizes both the footprint and flow disturbance. Unlike previous QCM designs, the fast thermal equilibration enables tasks such as temperature-dependent studies and ex situ sample exchange, further highlighting the feasibility of this QCM design for day-to-day use. Finally, the in situ mapping of thin film growth rates across the ALD reactor was demonstrated in a popular commercial tool operating in both continuous and quasi-static ALD modes.
摘要翻译： 本发明涉及在监测ALD过程中的QCM测量。 此前，ALD流程仍然存在重大障碍，准确执行。 将这种专门的原位技术转化为常规表征方法，开发了一个完整的QCM夹具。 这种新设计可以在各种ALD工具上轻松实现，允许快速进行样品交换，防止背面沉积，并最大限度地减少占地面积和流量扰动。 与以前的QCM设计不同，快速热平衡使得诸如温度依赖性研究和非原位样品交换等任务进一步凸显了该QCM设计的日常使用的可行性。 最后，在连续和准静态ALD模式下工作的流行商业工具中，证明了ALD反应器中薄膜生长速率的原位测绘。
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公开(公告)号：US09856563B2
公开(公告)日：2018-01-02
申请号：US13591498
申请日：2012-08-22
IPC分类号： C23C16/00 , C23C16/455 , C23C16/52
CPC分类号： C23C16/45525 , C23C16/52
摘要： The invention is directed to QCM measurements in monitoring ALD processes. Previously, significant barriers remain in the ALD processes and accurate execution. To turn this exclusively dedicated in situ technique into a routine characterization method, an integral QCM fixture was developed. This new design is easily implemented on a variety of ALD tools, allows rapid sample exchange, prevents backside deposition, and minimizes both the footprint and flow disturbance. Unlike previous QCM designs, the fast thermal equilibration enables tasks such as temperature-dependent studies and ex situ sample exchange, further highlighting the feasibility of this QCM design for day-to-day use. Finally, the in situ mapping of thin film growth rates across the ALD reactor was demonstrated in a popular commercial tool operating in both continuous and quasi-static ALD modes.
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公开(公告)号：US08741386B2
公开(公告)日：2014-06-03
申请号：US13631135
申请日：2012-09-28
申请人： Elijah J. Thimsen , Shannon C. Riha , Alex B. F. Martinson , Jeffrey W. Elam , Michael J. Pellin
发明人： Elijah J. Thimsen , Shannon C. Riha , Alex B. F. Martinson , Jeffrey W. Elam , Michael J. Pellin
IPC分类号： C23C16/00
CPC分类号： C23C16/305 , C23C16/306 , C23C16/45529 , C23C16/45531 , C23C16/56
摘要： Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu2ZnSnS4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.
摘要翻译： 提供了硫族化合物（包括Cu2ZnSnS4）的合成和沉积的方法和系统。 二元化合物，例如金属硫化物，可通过将衬底交替暴露于金属阳离子前体和硫族元素阴离子前体之间进行沉积，其间具有吹扫步骤。
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公开(公告)号：US07709056B2
公开(公告)日：2010-05-04
申请号：US11804059
申请日：2007-05-16
IPC分类号： B05D1/00
CPC分类号： C23C16/407 , C23C16/45527
摘要： A method and system for preparing a light transmitting and electrically conductive oxide film. The method and system includes providing an atomic layer deposition system, providing a first precursor selected from the group of cyclopentadienyl indium, tetrakis (dimethylamino) tin and mixtures thereof, inputting to the deposition system the first precursor for reaction for a first selected time, providing a purge gas for a selected time, providing a second precursor comprised of an oxidizer, and optionally inputting a second precursor into the deposition system for reaction and alternating for a predetermined number of cycles each of the first precursor, the purge gas and the second precursor to produce the oxide film.
摘要翻译： 一种制备透光导电氧化膜的方法和系统。 该方法和系统包括提供原子层沉积系统，提供选自环戊二烯基铟，四（二甲基氨基）锡及其混合物的第一前体，向沉积系统输入第一前体进行反应第一选定时间，提供 提供选定时间的吹扫气体，提供由氧化剂组成的第二前体，以及任选地将第二前体输入到沉积系统中进行反应并交替预定数量的循环，每个循环中的每个第一前体，吹扫气体和第二前体 以产生氧化膜。
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公开(公告)号：US20090000660A1
公开(公告)日：2009-01-01
申请号：US11823789
申请日：2007-06-28
IPC分类号： H01L31/0216 , H01L31/0224
CPC分类号： H01G9/2031 , H01G9/2059 , Y02E10/542
摘要： A heterojunction photovoltaic cell. The cell includes a nanoporous substrate, a transparent conducting oxide disposed on the nanoporous substrate, a nanolaminate film deposited on the nanoporous substrate surface, a sensitizer dye disposed on a wide band gap semiconducting oxide and a redox shuttle positioned within the layer structure.
摘要翻译： 异质结光伏电池。 该电池包括纳米孔基材，设置在纳米多孔基材上的透明导电氧化物，沉积在纳米多孔基材表面上的纳米级胺膜，设置在宽带隙半导体氧化物上的敏化剂染料和位于层结构内的氧化还原梭。
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6.发明授权Atomic layer deposition of metal sulfide thin films using non-halogenated precursors 有权使用非卤化前体的金属硫化物薄膜的原子层沉积公开(公告)号：US09040113B2
公开(公告)日：2015-05-26
申请号：US12780664
申请日：2010-05-14
IPC分类号： B05D5/12 , H01L21/02 , C23C16/30 , C23C16/455 , H01L31/0224 , H01L31/032 , H01L31/0336 , H01L31/0352 , H01L31/072
CPC分类号： H01L21/0243 , C23C16/305 , C23C16/45553 , H01L21/02557 , H01L21/02568 , H01L21/0262 , H01L31/022425 , H01L31/032 , H01L31/0336 , H01L31/03529 , H01L31/072 , Y02E10/50
摘要： A method for preparing a metal sulfide thin film using ALD and structures incorporating the metal sulfide thin film. The method includes providing an ALD reactor, a substrate, a first precursor comprising a metal and a second precursor comprising a sulfur compound. The first and the second precursors are reacted in the ALD precursor to form a metal sulfide thin film on the substrate. In a particular embodiment, the metal compound comprises Bis(N,N′-di-sec-butylacetamidinato)dicopper(I) and the sulfur compound comprises hydrogen sulfide (H2S) to prepare a Cu2S film. The resulting metal sulfide thin film may be used in among other devices, photovoltaic devices, including interdigitated photovoltaic devices that may use relatively abundant materials for electrical energy production.
摘要翻译： 使用ALD制备金属硫化物薄膜的方法和结合金属硫化物薄膜的结构。 该方法包括提供ALD反应器，底物，包含金属的第一前体和包含硫化合物的第二前体。 第一和第二前体在ALD前体中反应以在基底上形成金属硫化物薄膜。 在一个具体实施方案中，金属化合物包括双（N，N'-二仲丁基乙酰胺基）二苯醚（I），硫化合物包含硫化氢（H 2 S）以制备Cu 2 S膜。 所得到的金属硫化物薄膜可以用于其他装置中，包括可以使用相对丰富的材料用于电能产生的交叉指向的光伏器件的光伏器件。
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公开(公告)号：US08258398B2
公开(公告)日：2012-09-04
申请号：US11823789
申请日：2007-06-28
IPC分类号： H01L31/00
CPC分类号： H01G9/2031 , H01G9/2059 , Y02E10/542
摘要： A heterojunction photovoltaic cell. The cell includes a nanoporous substrate, a transparent conducting oxide disposed on the nanoporous substrate, a nanolaminate film deposited on the nanoporous substrate surface, a sensitizer dye disposed on a wide band gap semiconducting oxide and a redox shuttle positioned within the layer structure.
摘要翻译： 异质结光伏电池。 该电池包括纳米孔基材，设置在纳米多孔基材上的透明导电氧化物，沉积在纳米多孔基材表面上的纳米级胺膜，设置在宽带隙半导体氧化物上的敏化剂染料和位于层结构内的氧化还原梭。
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公开(公告)号：US08741800B2
公开(公告)日：2014-06-03
申请号：US12841805
申请日：2010-07-22
申请人： Jeffrey W. Elam , Christopher L. Marshall , Joseph A. Libera , James A. Dumesic , Yomaira J. Pagan-Torres
发明人： Jeffrey W. Elam , Christopher L. Marshall , Joseph A. Libera , James A. Dumesic , Yomaira J. Pagan-Torres
CPC分类号： B01J29/78 , B01J21/063 , B01J21/066 , B01J23/20 , B01J29/041 , B01J29/06 , B01J29/061 , B01J35/002 , B01J35/1019 , B01J35/1023 , B01J35/1042 , B01J35/1047 , B01J35/1061 , B01J37/0215 , B01J37/14 , B01J37/348 , B01J2229/186
摘要： A high surface area catalyst with a mesoporous support structure and a thin conformal coating over the surface of the support structure. The high surface area catalyst support is adapted for carrying out a reaction in a reaction environment where the thin conformal coating protects the support structure within the reaction environment. In various embodiments, the support structure is a mesoporous silica catalytic support and the thin conformal coating comprises a layer of metal oxide resistant to the reaction environment which may be a hydrothermal environment.
摘要翻译： 具有介孔载体结构的高表面积催化剂和在支撑结构表面上的薄的共形涂层。 高表面积催化剂载体适于在反应环境中进行反应，其中薄的共形涂层保护反应环境内的载体结构。 在各种实施方案中，支撑结构是介孔二氧化硅催化载体，并且薄的共形涂层包含对可能是水热环境的反应环境有抗性的金属氧化物层。
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公开(公告)号：US08318248B2
公开(公告)日：2012-11-27
申请号：US12478578
申请日：2009-06-04
IPC分类号： C23C16/00
CPC分类号： B01J37/0226 , B01J35/065 , C23C16/042 , C23C16/045 , C23C16/403 , C23C16/405 , C23C16/407 , C23C16/45525 , C23C16/45555
摘要： Methods for the selective deposition of materials within a porous substrate. The methods use the passivating effects of masking precursors applied to the porous substrate. A portion of a pore surface within the substrate is masked by exposing the substrate to one or more masking precursors. The depth of the pore surface that is masked is controllable by regulating the exposure of the substrate to the masking precursor. Application of the masking precursor prevents adsorption of one or more subsequently applied metal precursors about a portion of the pore surface coated by the masking precursor. Less than an entirety of the unmasked pore surface is coated by the metal precursor, forming a metal stripe on a portion of the pore surface. The depth of the metal stripe is controllable by regulating exposure of the porous substrate to the metal precursor. Subsequent exposure of the substrate to a saturating water application oxidizes the deposited precursors.
摘要翻译： 在多孔基材内选择性沉积材料的方法。 该方法使用掩蔽前体施加到多孔基材上的钝化作用。 通过将衬底暴露于一个或多个掩模前体来掩蔽衬底内的孔表面的一部分。 被掩蔽的孔表面的深度可通过调节衬底对掩蔽前体的曝光来控制。 掩蔽前体的应用防止一个或多个随后施加的金属前体在被掩蔽前体涂覆的孔表面的一部分附近吸附。 小于整个未掩模的孔表面被金属前体涂覆，在孔表面的一部分上形成金属条纹。 通过调节多孔基材对金属前体的曝光来控制金属条纹的深度。 随后将底物暴露于饱和水中，使沉积的前体氧化。
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公开(公告)号：US10131991B2
公开(公告)日：2018-11-20
申请号：US12895305
申请日：2010-09-30
申请人： Jeffrey W. Elam , Joseph A. Libera
发明人： Jeffrey W. Elam , Joseph A. Libera
IPC分类号： C23C16/455 , C23C16/40
摘要： A method of preparing light transmitting conducting metal oxide (TCO) films using atomic layer deposition (ALD) of a metal precursor multiple oxidizing reactants. The multiple metal oxidizing reactants may be selected to enhance growth of the TCO film. In a particular embodiment, an indium oxide TCO film is prepared using a cyclopentadienyl indium precursor and a combination of water and oxygen.
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