SPATIALLY CONTROLLED ATOMIC LAYER DEPOSITION IN POROUS MATERIALS
    1.
    发明申请
    SPATIALLY CONTROLLED ATOMIC LAYER DEPOSITION IN POROUS MATERIALS 有权
    空间控制原子层沉积在多孔材料中

    公开(公告)号:US20090304920A1

    公开(公告)日:2009-12-10

    申请号:US12478578

    申请日:2009-06-04

    摘要: Methods for the selective deposition of materials within a porous substrate. The methods use the passivating effects of masking precursors applied to the porous substrate. A portion of a pore surface within the substrate is masked by exposing the substrate to one or more masking precursors. The depth of the pore surface that is masked is controllable by regulating the exposure of the substrate to the masking precursor. Application of the masking precursor prevents adsorption of one or more subsequently applied metal precursors about a portion of the pore surface coated by the masking precursor. Less than an entirety of the unmasked pore surface is coated by the metal precursor, forming a metal stripe on a portion of the pore surface. The depth of the metal stripe is controllable by regulating exposure of the porous substrate to the metal precursor. Subsequent exposure of the substrate to a saturating water application oxidizes the deposited precursors.

    摘要翻译: 在多孔基材内选择性沉积材料的方法。 该方法使用掩蔽前体施加到多孔基材上的钝化作用。 通过将衬底暴露于一个或多个掩模前体来掩蔽衬底内的孔表面的一部分。 被掩蔽的孔表面的深度可通过调节衬底对掩蔽前体的曝光来控制。 掩蔽前体的应用防止一个或多个随后施加的金属前体在被掩蔽前体涂覆的孔表面的一部分附近吸附。 小于整个未掩模的孔表面被金属前体涂覆,在孔表面的一部分上形成金属条纹。 通过调节多孔基材对金属前体的曝光来控制金属条纹的深度。 随后将底物暴露于饱和水中,使沉积的前体氧化。

    Metal containing composites
    7.
    发明授权
    Metal containing composites 有权
    含金属复合材料

    公开(公告)号:US08815766B2

    公开(公告)日:2014-08-26

    申请号:US13394881

    申请日:2010-06-11

    IPC分类号: B01J21/00

    摘要: Embodiments include metal (102) containing composites (100) and methods of forming metal containing composites. A metal containing composite can be formed by contacting an oxide support surface (104) with coordination compounds having metal atoms for a first predetermined time, where the metal atoms of the coordination compounds deposit on the oxide support surface; contacting the oxide support surface with a first reagent for a second predetermined time; and contacting the first reagent with a second reagent for a third predetermined time, where the first reagent and the second reagent react to form another layer of the oxide support surface.

    摘要翻译: 实施方案包括含有复合材料(100)的金属(102)和形成含金属复合材料的方法。 可以通过使氧化物载体表面(104)与具有金属原子的配位化合物接触第一预定时间来形成含金属的复合材料,其中配位化合物的金属原子沉积在氧化物载体表面上; 使氧化物载体表面与第一试剂接触第二预定时间; 以及使第一试剂与第二试剂接触第三预定时间,其中第一试剂和第二试剂反应形成另一层氧化物载体表面。

    Spatially controlled atomic layer deposition in porous materials
    9.
    发明授权
    Spatially controlled atomic layer deposition in porous materials 有权
    多孔材料中的空间控制原子层沉积

    公开(公告)号:US08318248B2

    公开(公告)日:2012-11-27

    申请号:US12478578

    申请日:2009-06-04

    IPC分类号: C23C16/00

    摘要: Methods for the selective deposition of materials within a porous substrate. The methods use the passivating effects of masking precursors applied to the porous substrate. A portion of a pore surface within the substrate is masked by exposing the substrate to one or more masking precursors. The depth of the pore surface that is masked is controllable by regulating the exposure of the substrate to the masking precursor. Application of the masking precursor prevents adsorption of one or more subsequently applied metal precursors about a portion of the pore surface coated by the masking precursor. Less than an entirety of the unmasked pore surface is coated by the metal precursor, forming a metal stripe on a portion of the pore surface. The depth of the metal stripe is controllable by regulating exposure of the porous substrate to the metal precursor. Subsequent exposure of the substrate to a saturating water application oxidizes the deposited precursors.

    摘要翻译: 在多孔基材内选择性沉积材料的方法。 该方法使用掩蔽前体施加到多孔基材上的钝化作用。 通过将衬底暴露于一个或多个掩模前体来掩蔽衬底内的孔表面的一部分。 被掩蔽的孔表面的深度可通过调节衬底对掩蔽前体的曝光来控制。 掩蔽前体的应用防止一个或多个随后施加的金属前体在被掩蔽前体涂覆的孔表面的一部分附近吸附。 小于整个未掩模的孔表面被金属前体涂覆,在孔表面的一部分上形成金属条纹。 通过调节多孔基材对金属前体的曝光来控制金属条纹的深度。 随后将底物暴露于饱和水中,使沉积的前体氧化。