公开(公告)号：US07887691B2

公开(公告)日：2011-02-15

申请号：US10530694

申请日：2003-10-09

申请人： Alexander Giles Davies ,  Christoph Walti ,  Anton Peter Jacob Middelberg ,  Michael Pepper ,  Rene Wirtz

发明人： Alexander Giles Davies ,  Christoph Walti ,  Anton Peter Jacob Middelberg ,  Michael Pepper ,  Rene Wirtz

IPC分类号： C25D5/02

CPC分类号： B82Y30/00 ,  B01J19/0046 ,  B01J2219/00427 ,  B01J2219/005 ,  B01J2219/00529 ,  B01J2219/00596 ,  B01J2219/00608 ,  B01J2219/00612 ,  B01J2219/00626 ,  B01J2219/00637 ,  B01J2219/00648 ,  B01J2219/00653 ,  B01J2219/00659 ,  B01J2219/00722 ,  C12Q1/6837 ,  C40B40/06 ,  C40B60/14 ,  C12Q2565/607

摘要： The present invention provides a method of forming coatings of at least two different coating molecules on at least two electrodes, the method comprising: (a) providing an array of at least two individually-addressable electrodes, (b) allowing a layer of a masking molecule to adsorb onto all electrodes, (c) inducing electrochemical desorption of the masking molecule from at least one but not all electrodes to expose a first set of exposed electrodes, (d) allowing a first coating molecule to adsorb onto the first set of exposed electrodes, (e) exposing all electrodes to a masking molecule to allow adsorption of the masking molecule onto all electrodes, (f) inducing electrochemical desorption of masking molecule from a second set of electrodes to expose a second set of exposed electrodes, (g) allowing a second coating molecule to adsorb onto the second set of exposed electrodes.

摘要翻译： 本发明提供了一种在至少两个电极上形成至少两种不同涂层分子的涂层的方法，所述方法包括：（a）提供至少两个可单独寻址的电极的阵列，（b）允许掩模层 分子吸附到所有电极上，（c）从至少一个但不是全部电极诱导掩蔽分子的电化学解吸，以暴露出第一组暴露的电极，（d）允许第一涂层分子吸附到第一组曝光 （e）将所有电极暴露于掩蔽分子以允许掩蔽分子吸附到所有电极上，（f）从第二组电极诱导掩蔽分子的电化学解吸，以暴露第二组暴露电极，（g） 允许第二涂层分子吸附到第二组曝光电极上。

公开(公告)号：US20100234234A1

公开(公告)日：2010-09-16

申请号：US12440832

申请日：2007-09-13

申请人： Paul Ko Ferrigno ,  Christoph Walti ,  David Evans ,  Steven Johnson ,  Alexander Giles Davies

发明人： Paul Ko Ferrigno ,  Christoph Walti ,  David Evans ,  Steven Johnson ,  Alexander Giles Davies

IPC分类号： C40B30/00 ,  C40B40/10 ,  G01F1/64

CPC分类号： G01N33/5438 ,  B01J19/0046 ,  B01J2219/00653 ,  B01J2219/00659 ,  B01J2219/00704 ,  B01J2219/00725

摘要： The invention relates to a method of detecting a structural change in a molecule, said molecule being attached to a surface, said surface being electrically conductive, wherein the phase of the electrochemical impedance at said surface is monitored, and wherein a change in the phase in the electrochemical impedance at said surface indicates a change in the structure of said molecule. The invention further relates to methods for making arrays having molecules such as, polypeptides attached to electrically conductive surfaces such as electrodes, and to arrays.

摘要翻译： 本发明涉及一种检测分子中的结构变化的方法，所述分子附着于表面，所述表面是导电的，其中监测所述表面处的电化学阻抗的相位，并且其中相的变化 所述表面的电化学阻抗表示所述分子的结构的变化。 本发明还涉及制备具有分子的阵列的方法，所述分子例如附着到诸如电极的导电表面上的多肽，以及阵列。

公开(公告)号：US06388799B1

公开(公告)日：2002-05-14

申请号：US09432762

申请日：1999-11-03

申请人： Donald Dominic Arnone ,  Andrew James Shields ,  Richard Andrew Hogg ,  Craig Michael Ciesla ,  David Mark Whittaker ,  Edmund Harold Linfield ,  Alexander Giles Davies

发明人： Donald Dominic Arnone ,  Andrew James Shields ,  Richard Andrew Hogg ,  Craig Michael Ciesla ,  David Mark Whittaker ,  Edmund Harold Linfield ,  Alexander Giles Davies

IPC分类号： G02F0135

CPC分类号： H01S3/108 ,  G01N21/3581 ,  H01S1/02 ,  H01S3/109 ,  H01S3/1109

摘要： An optical device for efficient radiation emission having a modulation region with phase matching means (1) for enhancing the phase matching between two different frequency signals propagating in the optical modulation region (1) in response to illumination by at least one incident beam (7, 8), the phase matching means (1), having a spatial variation in its refractive index (5) along the path of the incident radiation beam (7, 8). The device may be configured as a radiation source comprising a frequency conversion member (C2) for emitting a beam of radiation (553) in response to irradiation by one or more input beams (507), the emitted beam (553) having a frequency different to that of the one or more input beams (507), the one or more input beams (507) all being produced within a lasing cavity (defined by M3, M4, M5, M6 and output coupler (523)) and said frequency conversion member (C2) being located within said lasing cavity. The invention also extends to an imaging system using the radiation source.

摘要翻译： 一种用于高效辐射发射的光学装置，其具有带有相位匹配装置（1）的调制区域，用于响应于至少一个入射光束（7,7）的光照而增强在光学调制区域（1）中传播的两个不同频率信号之间的相位匹配， 8），相位匹配装置（1）沿着入射辐射束（7,8）的路径具有其折射率（5）的空间变化。 该装置可以被配置为包括用于响应于一个或多个输入光束（507）的照射而发射辐射束（553）的频率转换部件（C2）的辐射源，发射的光束（553）具有不同的频率 与一个或多个输入光束（507）的输入光束（507）的一个或多个输入光束（507）全部在激光腔（由M3，M4，M5，M6和输出耦合器（523）定义）内产生，并且所述频率转换 构件（C2）位于所述激光腔内。 本发明还延伸到使用辐射源的成像系统。

公开(公告)号：US20110310379A1

公开(公告)日：2011-12-22

申请号：US13058403

申请日：2009-08-05

申请人： Matthew Byrne ,  Edmund Linfield ,  Christopher Wood ,  Alexander Giles Davies ,  John Cunningham

发明人： Matthew Byrne ,  Edmund Linfield ,  Christopher Wood ,  Alexander Giles Davies ,  John Cunningham

IPC分类号： G01N21/25 ,  G01J3/00

CPC分类号： G01N21/3581 ,  G01J3/42 ,  G01N21/3563 ,  G01N21/552 ,  H01L31/0352 ,  H01L31/09

摘要： A method for measuring an absorption characteristic of a sample comprises: providing a microstrip waveguide comprising a ground plane, an elongate conductive strip having a first end and a second end, and a dielectric substrate separating the ground plane from the elongate strip such that the strip extends from its first end to its second end in a plane substantially parallel to the ground plane; emitting electromagnetic radiation from a first intermediate position along the microstrip waveguide, said first intermediate position being a position between the first and second ends of the strip, such that said radiation propagates along the waveguide in a direction towards the second end; positioning a sample at a position external to the microstrip waveguide and between the first intermediate position and a second intermediate position along the microstrip waveguide, the second intermediate position being a position between the first intermediate position and the second end, such that at least a portion of the sample is exposed to the evanescent electric field of the propagating radiation; and detecting at least one characteristic of the propagating radiation at said second intermediate position. Corresponding apparatus is also disclosed.

摘要翻译： 用于测量样品的吸收特性的方法包括：提供包括接地平面的微带波导，具有第一端和第二端的细长导电条，以及将接地平面与细长条分开的电介质基板，使得带 在基本上平行于接地平面的平面中从其第一端延伸到其第二端; 沿着所述微带波导从第一中间位置发射电磁辐射，所述第一中间位置是所述带的第一和第二端之间的位置，使得所述辐射沿着所述波导在朝向所述第二端的方向上传播; 将样品定位在微带波导外部的位置处，并且沿着微带波导在第一中间位置和第二中间位置之间，第二中间位置是位于第一中间位置和第二端之间的位置，使得至少一部分 的样品暴露于传播辐射的ev逝电场; 并且检测所述第二中间位置处的传播辐射的至少一个特性。 还公开了相应的装置。

公开(公告)号：US07382806B2

公开(公告)日：2008-06-03

申请号：US10508996

申请日：2003-03-24

申请人： Alessandro Tredicucci ,  Fabio Beltram ,  Harvey Edward Beere ,  Alexander Giles Davies ,  Ruedeger Koehler ,  Edmund Harold Linfield

发明人： Alessandro Tredicucci ,  Fabio Beltram ,  Harvey Edward Beere ,  Alexander Giles Davies ,  Ruedeger Koehler ,  Edmund Harold Linfield

IPC分类号： H01S3/30

CPC分类号： B82Y20/00 ,  H01S5/1046 ,  H01S5/2054 ,  H01S5/22 ,  H01S5/3213 ,  H01S5/3402

摘要： A semiconductor laser comprises an active region (12) which, in response to a pumping energy applied thereto, can produce a stimulated emission of radiation with a central wavelength (λ) in the far infrared region, and a confinement region (16, 18, 22) suitable for confining the radiation in the active region (12), and comprising at least one interface (16a, 16b, 22a) between adjacent layers that is capable of supporting surface plasmon modes generated by an interaction of the interface with the radiation. The confinement region (16, 18, 22) comprises a wave-guide layer (16) which is delimited on opposite sides by a first interface and by a second interface (16a, 16b). The guide layer (16) is doped in a manner such that the first and second interfaces (16a, 16b) are capable of supporting the plasmon modes, respectively, and is of a thickness (d) such as to bring about the accumulation of the plasmon modes in proximity to the first and second interfaces (16a, 16b), outside the layer (16), and substantially a suppression of the plasmon modes, inside the layer.

摘要翻译： 半导体激光器包括有源区域（12），其响应于施加到其上的泵送能量，可产生受激发射的远红外区域中具有中心波长（λ）的辐射，以及约束区域（16,18， 22），其适于将辐射限制在有源区域（12）中，并且包括相邻层之间的至少一个界面（16a，16b，22a），其能够支持通过界面与 辐射。 所述限制区域（16,18,22）包括波导层（16），所述波导层（16）由相对侧由第一界面和第二界面（16a，16b）限定。 引导层（16）以使得第一和第二界面（16a，16b）能够分别支撑等离子体模式并且具有厚度（d）的方式被掺杂，以便产生积累 在层（16）外部的第一和第二界面（16a，16b）附近的等离子体激元模式，以及基本上抑制层内的等离子体激元模式。

公开(公告)号：US20120113417A1

公开(公告)日：2012-05-10

申请号：US13384214

申请日：2010-07-19

申请人： Edmund Linfield ,  John Cunningham ,  Alexander Giles Davies ,  Christopher Wood ,  Paul John Cannard ,  David Graham Moodie ,  Xin Chen ,  Michael James Robertson

发明人： Edmund Linfield ,  John Cunningham ,  Alexander Giles Davies ,  Christopher Wood ,  Paul John Cannard ,  David Graham Moodie ,  Xin Chen ,  Michael James Robertson

IPC分类号： G01J3/00 ,  H01L33/58 ,  H01L33/02 ,  G01J1/42

CPC分类号： G02F2/00 ,  C30B25/02 ,  C30B29/40 ,  G01J3/10 ,  G01J3/42 ,  G01N21/3586 ,  G01S17/88 ,  G02F2202/10 ,  G02F2203/13 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02581 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/09 ,  Y02E10/544

摘要： A method of generating radiation comprises: manufacturing a structure comprising a substrate supporting a layer of InGaAs, InGaAsP, or InGaAlAs material doped with a dopant, said manufacturing comprising growing said layer such that said dopant is incorporated in said layer during growth of the layer; illuminating a portion of a surface of the structure with radiation having photon energies greater than or equal to a band gap of the doped InGaAs, InGaAsP, or InGaAlAs material so as to create electron-hole pairs in the layer of doped material; and accelerating the electrons and holes of said pairs with an electric field so as to generate radiation. In certain embodiments the dopant is Fe. Corresponding radiation detecting apparatus, spectroscopy systems, and antennas are described.

摘要翻译： 产生辐射的方法包括：制造包括支撑掺杂有掺杂剂的InGaAs，InGaAsP或InGaAlAs材料的衬底的衬底的结构，所述制造包括使所述层生长，使得所述掺杂剂在所述层的生长期间并入所述层中; 用大于或等于掺杂InGaAs，InGaAsP或InGaAlAs材料的带隙的光子能量的辐射照射结构的表面的一部分，以便在掺杂材料层中产生电子 - 空穴对; 并用电场加速所述对的电子和空穴，以产生辐射。 在某些实施方案中，掺杂剂是Fe。 描述了相应的辐射检测装置，光谱系统和天线。

公开(公告)号：US08809092B2

公开(公告)日：2014-08-19

申请号：US13384214

申请日：2010-07-19

申请人： Edmund Linfield ,  John Cunningham ,  Alexander Giles Davies ,  Christopher Wood ,  Paul John Cannard ,  David Graham Moodie ,  Xin Chen ,  Michael James Robertson

发明人： Edmund Linfield ,  John Cunningham ,  Alexander Giles Davies ,  Christopher Wood ,  Paul John Cannard ,  David Graham Moodie ,  Xin Chen ,  Michael James Robertson

IPC分类号： H01L21/00

CPC分类号： G02F2/00 ,  C30B25/02 ,  C30B29/40 ,  G01J3/10 ,  G01J3/42 ,  G01N21/3586 ,  G01S17/88 ,  G02F2202/10 ,  G02F2203/13 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02581 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/09 ,  Y02E10/544

摘要： A method of generating radiation comprises: manufacturing a structure comprising a substrate supporting a layer of InGaAs, InGaAsP, or InGaAlAs material doped with a dopant, said manufacturing comprising growing said layer such that said dopant is incorporated in said layer during growth of the layer; illuminating a portion of a surface of the structure with radiation having photon energies greater than or equal to a band gap of the doped InGaAs, InGaAsP, or InGaAlAs material so as to create electron-hole pairs in the layer of doped material; and accelerating the electrons and holes of said pairs with an electric field so as to generate radiation. In certain embodiments the dopant is Fe. Corresponding radiation detecting apparatus, spectroscopy systems, and antennas are described.

摘要翻译： 产生辐射的方法包括：制造包括支撑掺杂有掺杂剂的InGaAs，InGaAsP或InGaAlAs材料的衬底的衬底的结构，所述制造包括使所述层生长，使得所述掺杂剂在所述层的生长期间并入所述层中; 用大于或等于掺杂InGaAs，InGaAsP或InGaAlAs材料的带隙的光子能量的辐射照射结构的表面的一部分，以便在掺杂材料层中产生电子 - 空穴对; 并用电场加速所述对的电子和空穴，以产生辐射。 在某些实施方案中，掺杂剂是Fe。 描述了相应的辐射检测装置，光谱系统和天线。