公开(公告)号：US06541398B2

公开(公告)日：2003-04-01

申请号：US10176438

申请日：2002-06-19

申请人： Alfred Grill ,  David R. Medeiros ,  Vishnubhai V. Patel

发明人： Alfred Grill ,  David R. Medeiros ,  Vishnubhai V. Patel

IPC分类号： H01L21311

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31633 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcyclotetrasiloxane and cyclopentene oxide.

公开(公告)号：US07312524B2

公开(公告)日：2007-12-25

申请号：US11324479

申请日：2006-01-03

申请人： Stephen M. Gates ,  Alfred Grill ,  David R. Medeiros ,  Deborah Newmayer ,  Son Van Nguyen ,  Vishnubhai V. Patel ,  Xinhui Wang

发明人： Stephen M. Gates ,  Alfred Grill ,  David R. Medeiros ,  Deborah Newmayer ,  Son Van Nguyen ,  Vishnubhai V. Patel ,  Xinhui Wang

IPC分类号： H01L23/12 ,  H01L23/053

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/31695

摘要： A method for fabricating a thermally stable ultralow dielectric constant film including Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

摘要翻译： 公开了一种在使用等离子体增强化学气相沉积（“PECVD”）工艺的平行板化学气相沉积工艺中制造包括Si，C，O和H原子的热稳定超低介电常数膜的方法。 还公开了通过该方法制备的包含热稳定的超低介电常数材料的绝缘层的电子器件。 为了制造热稳定的超低介电常数膜，使用特定的前体材料，例如硅烷衍生物，例如二乙氧基甲基硅烷（DEMS）和有机分子，例如双环庚二烯和环戊烯氧化物。

公开(公告)号：US07049247B2

公开(公告)日：2006-05-23

申请号：US10838849

申请日：2004-05-03

申请人： Stephen M. Gates ,  Alfred Grill ,  David R. Medeiros ,  Deborah Neumayer ,  Son Van Nguyen ,  Vishnubhai V. Patel ,  Xinhui Wang

发明人： Stephen M. Gates ,  Alfred Grill ,  David R. Medeiros ,  Deborah Neumayer ,  Son Van Nguyen ,  Vishnubhai V. Patel ,  Xinhui Wang

IPC分类号： H01L21/31

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/31695

摘要： A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

摘要翻译： 公开了一种使用等离子体增强化学气相沉积（“PECVD”）工艺在平行板化学气相沉积工艺中制造包含Si，C，O和H原子的热稳定超低介电常数膜的方法。 还公开了通过该方法制备的包含热稳定的超低介电常数材料的绝缘层的电子器件。 为了制造热稳定的超低介电常数膜，使用特定的前体材料，例如硅烷衍生物，例如二乙氧基甲基硅烷（DEMS）和有机分子，例如双环庚二烯和环戊烯氧化物。

公开(公告)号：US06441491B1

公开(公告)日：2002-08-27

申请号：US09769089

申请日：2001-01-25

申请人： Alfred Grill ,  David R. Medeiros ,  Vishnubhai V. Patel

发明人： Alfred Grill ,  David R. Medeiros ,  Vishnubhai V. Patel

IPC分类号： H01L2348

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31633 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcyclotetrasiloxane and cyclopentene oxide.

摘要翻译： 公开了一种使用等离子体增强化学气相沉积（“PECVD”）工艺在平行板化学气相沉积工艺中制造包含Si，C，O和H原子的热稳定超低介电常数膜的方法。 还公开了通过该方法制备的包含热稳定的超低介电常数材料的绝缘层的电子器件。 为了制造热稳定的超低介电常数膜，使用特定的前体材料，例如环状硅氧烷和含有环结构的有机分子，例如四甲基环四硅氧烷和环戊烯氧化物。

公开(公告)号：US07875408B2

公开(公告)日：2011-01-25

申请号：US11698182

申请日：2007-01-25

申请人： John A. Hoffnagle ,  David R. Medeiros ,  Robert D. Miller ,  Libor Vycklicky ,  Gregory M. Wallraff

发明人： John A. Hoffnagle ,  David R. Medeiros ,  Robert D. Miller ,  Libor Vycklicky ,  Gregory M. Wallraff

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/031 ,  G03F7/075

CPC分类号： G03F7/091 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/106 ,  Y10S430/146

摘要： Compositions comprising photobleachable organic materials can be bleached by 193 nm light, and brought back to their original state by stimuli after exposure. (reversible photobleaching). We use these compositions in art-known contrast enhancement layers and as a part of a photoresist, especially in optical lithography processes for semiconductor fabrication. They may comprise polymers such as organo-silicon polymers, polymers comprising polymers of aromatic hydroxyl compounds such as phenol and naphthol such as phenol formaldehyde polymers and naphthol formaldehyde polymers styrene polymers and phenolic acrylate polymers or cyclic materials comprising: where the radicals “R” and “Y” represent organo, or substituted organo moieties, Structures I, II, and III represent basic organic skeletons and can be unsubstituted or substituted in any available position with any one or combinations of multiple substituents.

摘要翻译： 包含可光漂白有机材料的组合物可以用193nm的光漂白，并且在曝光后通过刺激使其恢复到其初始状态。 （可逆光漂白）。 我们将这些组合物用于本领域已知的对比增强层和作为光致抗蚀剂的一部分，特别是在用于半导体制造的光刻工艺中。 它们可以包括聚合物，例如有机硅聚合物，包含芳族羟基化合物如苯酚和萘酚的聚合物的聚合物，例如苯酚甲醛聚合物和萘酚甲醛聚合物苯乙烯聚合物和酚醛丙烯酸酯聚合物或环状材料，其包括：其中基团“R”和 “Y”表示有机或取代的有机部分，结构I，II和III表示碱性有机骨架，并且可以在任何可用位置被未取代或被任何一个或多个取代基的组合取代。

公开(公告)号：US07563558B2

公开(公告)日：2009-07-21

申请号：US11924005

申请日：2007-10-25

申请人： Robert David Allen ,  Gregory Breyta ,  Phillip Joe Brock ,  Richard A. DiPietro ,  David R. Medeiros ,  Ratnam Sooriyakumaran

发明人： Robert David Allen ,  Gregory Breyta ,  Phillip Joe Brock ,  Richard A. DiPietro ,  David R. Medeiros ,  Ratnam Sooriyakumaran

IPC分类号： G03F7/00 ,  G03F7/004 ,  C08F214/18

CPC分类号： G03F7/0046 ,  C08F220/24 ,  C08F222/06 ,  C08F232/08 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0395

摘要： The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.

摘要翻译： 本发明提供了可用于负性抗蚀剂组合物的聚合物。 本发明的聚合物包含（1）具有极性官能团的第一单体; （2）第二单体; 和（3）赋予选自可交联官能团，耐蚀刻性和溶解度调制中的至少一种特性的第三单体。 第一单体在消除极性官能团时提供酸催化的极性开关，而第二单体提供水溶解。 本发明的聚合物可以并入负性抗蚀剂组合物，其还可以包括光酸产生剂，交联剂，碱性化合物，溶剂，溶解促进剂，光碱产生剂，潜碱性化合物，表面活性剂，粘合促进剂和消泡剂。

公开(公告)号：US07300739B2

公开(公告)日：2007-11-27

申请号：US10449181

申请日：2003-05-29

申请人： Robert David Allen ,  Gregory Breyta ,  Phillip Joe Brock ,  Richard A. DiPietro ,  David R. Medeiros ,  Ratnam Sooriyakumaran

发明人： Robert David Allen ,  Gregory Breyta ,  Phillip Joe Brock ,  Richard A. DiPietro ,  David R. Medeiros ,  Ratnam Sooriyakumaran

IPC分类号： G03F7/004 ,  C08F14/00 ,  C08F14/18

CPC分类号： G03F7/0046 ,  C08F220/24 ,  C08F222/06 ,  C08F232/08 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0395

摘要： The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.

摘要翻译： 本发明提供了可用于负性抗蚀剂组合物的聚合物。 本发明的聚合物包含（1）具有极性官能团的第一单体; （2）第二单体; 和（3）赋予选自可交联官能团，耐蚀刻性和溶解度调制中的至少一种特性的第三单体。 第一单体在消除极性官能团时提供酸催化的极性开关，而第二单体提供水溶解。 本发明的聚合物可以并入负性抗蚀剂组合物中，其还可以包括光酸产生剂，交联剂，碱性化合物，溶剂，溶解促进剂，光碱产生剂，潜碱性化合物，表面活性剂，粘合促进剂和消泡剂。

公开(公告)号：US07053401B2

公开(公告)日：2006-05-30

申请号：US10323899

申请日：2002-12-20

申请人： Ali Afzali Ardakani ,  Christos D. Dimitrakopoulos ,  Teresita O. Graham ,  David R. Medeiros

发明人： Ali Afzali Ardakani ,  Christos D. Dimitrakopoulos ,  Teresita O. Graham ,  David R. Medeiros

IPC分类号： H01L35/24

CPC分类号： H01L51/0055 ,  H01L51/0003 ,  H01L51/0015 ,  H01L51/0016

摘要： Soluble, photosensitive precursors of pentacene are synthesized by a one-step Diels-Alder reaction of pentacene with N-sulfinylamides. These precursors may include a photopolymerizable group, which renders the pentacene precursor as a negative tone resist. The pentacene precursor may also include an acid-sensitive protecting group, which in the presence of a photoacid generator and upon exposure to UV light, is removed and the product becomes base soluble. Patterned pentacene thin films may be obtained by exposure to UV light through a mask and/or heating, and used as an active channel material for an organic field effect transistor.

摘要翻译： 并五苯的可溶性光敏前体通过并五苯与N-亚磺酰胺的一步Diels-Alder反应合成。 这些前体可以包括可光聚合基团，其使并五苯前体作为负性抗拒剂。 并五苯前体还可以包含酸敏感的保护基团，其在光酸产生剂存在下和暴露于UV光下被除去并且产物变得可溶于碱。 图案化的并五苯薄膜可以通过掩模和/或加热曝光于UV光下获得，并用作有机场效应晶体管的有源沟道材料。

公开(公告)号：US06730454B2

公开(公告)日：2004-05-04

申请号：US10124087

申请日：2002-04-16

申请人： Dirk Pfeiffer ,  Marie Angelopoulos ,  Katherina Babich ,  Phillip Brock ,  Wu-Song Huang ,  Arpan P. Mahorowala ,  David R. Medeiros ,  Ratnam Sooriyakumaran

发明人： Dirk Pfeiffer ,  Marie Angelopoulos ,  Katherina Babich ,  Phillip Brock ,  Wu-Song Huang ,  Arpan P. Mahorowala ,  David R. Medeiros ,  Ratnam Sooriyakumaran

IPC分类号： G03F700

CPC分类号： H01L21/0276 ,  G03F7/0045 ,  G03F7/0757 ,  G03F7/091 ,  Y10S430/151

摘要： Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.

摘要翻译： 存在具有发色团部分和透明部分的含SiO聚合物的抗反射组合物是光刻工艺中有用的抗反射硬掩模组​​合物。 这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。 本发明的组合物有利地用于较短波长的光刻工艺和/或具有最小的残留酸含量。

公开(公告)号：US06641971B2

公开(公告)日：2003-11-04

申请号：US09882234

申请日：2001-06-15

申请人： Wu-Song Huang ,  David R. Medeiros

发明人： Wu-Song Huang ,  David R. Medeiros

IPC分类号： G03F7023

CPC分类号： G03F7/0758 ,  G03F7/0045 ,  Y10S430/106

摘要： A chemically amplified resist composition comprises an aqueous base soluble polymer or copolymer having one or more polar functional groups, wherein at least one of the functional groups is protected with a cycloaliphatic silyl ketal group but may also include other protecting groups as well as unprotected acidic functionalities. A ratio of protected to unprotected acidic functionalities is preferably selected to most effectively modulate a solubility of the resist composition in an aqueous base or other developer. The resist composition further comprises an acid generator, preferably a photoacid generator (PAG), and a casting solvent, and may also include other components, such as, a base additive and/or surfactant.

摘要翻译： 化学放大抗蚀剂组合物包含具有一个或多个极性官能团的碱性水溶性聚合物或共聚物，其中至少一个官能团用脂环族甲硅烷基缩酮基团保护，但也可包括其它保护基团以及未保护的酸性官能团 。 优选选择被保护的与未保护的酸性官能度的比例以最有效地调节抗蚀剂组合物在碱性水溶液或其它显影剂中的溶解度。 抗蚀剂组合物还包含酸产生剂，优选光酸产生剂（PAG）和浇铸溶剂，并且还可以包括其它组分，例如碱添加剂和/或表面活性剂。