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1.发明授权Tandem coupled cavity lasers with separate current control and high parasitic resistance between them for bistability and negative resistance characteristics and use thereof for optical disc readout 失效串联耦合腔体激光器，具有独立的电流控制和它们之间的高寄生电阻，用于双稳态和负电阻特性，并用于光盘读出
公开(公告)号：US4562569A
公开(公告)日：1985-12-31
申请号：US337096
申请日：1982-01-05
申请人： Amnon Yariv , Christoph Harder , Kam-Yin Lau
发明人： Amnon Yariv , Christoph Harder , Kam-Yin Lau
CPC分类号： G11B7/13 , G02F3/026 , H01S3/1061 , H01S5/0601
摘要： A two-segment contact buried heterostructure (BH) laser is pumped by a current applied to its absorber contact from a source of high impedance on the order of 100K.OMEGA. or more. The parasitic resistance between the absorber contact and the gain contact is high on the order of 10K.OMEGA.. For a given absorber (bias) current the laser exhibits a relatively wide hysteresis on the order of 1 mA or more in the light vs. gain contact current. Such a laser is highly useful as a bistable optical element. The laser is also bistable with selected pump gain and absorber currents to exhibit a wide hysteresis of voltage across the absorber contact vs. relative amounts of light which is reflected back to the laser as feedback. The laser serve both as a light source and as a detector for reading out binary information stored as light reflective spots on a medium, e.g. a video disk.
摘要翻译： 双段触点掩埋异质结构（BH）激光器由施加到其吸收器触点的电流从大约100KΩ或更大的高阻抗源泵浦。 吸收器触点和增益触点之间的寄生电阻高达10K欧姆的数量级。 对于给定的吸收体（偏压）电流，激光器在光与增益接触电流之间呈现大约1mA或更大的滞后。 这样的激光器作为双稳态光学元件是非常有用的。 激光器还具有选定的泵浦增益和吸收器电流双稳态，以在吸收器接触之间表现出相对于作为反馈反射回激光器的相对光量的宽的滞后。 激光器既用作光源又用作检测器，用于读取存储在介质上的光反射点的二进制信息，例如， 一个视频盘。
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公开(公告)号：US5463705A
公开(公告)日：1995-10-31
申请号：US288639
申请日：1994-08-10
IPC分类号： G02B6/122 , G01C19/66 , G02B6/125 , G02B6/24 , H01S3/00 , H01S3/083 , H01S5/00 , H01S5/026 , H01S5/10 , G02B6/12
CPC分类号： H01S5/1071 , G02B6/125 , G02B6/243 , H01S3/0064 , H01S5/0064 , H01S5/026 , H01S5/1032
摘要： Optical waveguide isolator (121) for monolithic integration with semiconductor light emitting diodes such as Fabry-Perot or ring laser diodes. The present optical isolator (121), with optical input port (95) and output pod (96), comprises a branching waveguide coupler (56). This branching waveguide coupler (56) has a waveguide stem (60) splitted at one end into two waveguide branches (57, 58) such that a light wave fed via said input pod (95) into a first of these branches (58), is guided via the waveguide stem (60) and the output pod (96) out of the device. A light wave fed to the isolator's output pod (96) is guided along the stem (60) and coupled into the second waveguide branch (57).
摘要翻译： 用于与半导体发光二极管（例如法布里 - 珀罗）或环形激光二极管单片集成的光波导隔离器（121）。 具有光输入端口（95）和输出盒（96）的本光隔离器（121）包括分支波导耦合器（56）。 该分支波导耦合器（56）具有在一端分成两个波导分支（57,58）的波导管（60），使得经由所述输入容器（95）馈送到这些分支（58）中的第一个的光波， 经由波导管杆（60）和输出容器（96）引导出装置。 馈送到隔离器输出盒（96）的光波沿着杆（60）被引导并且耦合到第二波导支路（57）中。
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公开(公告)号：US5331655A
公开(公告)日：1994-07-19
申请号：US45772
申请日：1993-04-14
申请人： Christoph Harder , Stefan Hausser , Heinz Meier
发明人： Christoph Harder , Stefan Hausser , Heinz Meier
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/32 , H01S5/3434 , H01S5/2004 , H01S5/32391 , H01S5/34306
摘要： Laser diode with independent electronic and optical confinement, referred to as decoupled confinement, comprising an active region, i.e. an active layer, a single quantum well layer or a multi-quantum well layer, embedded in a carrier confinement structure providing for an energy barrier at least on one side of the active region. This energy barrier reduces carrier leakage out of the active region. The carrier confinement structure is embedded in an optical confinement structure which guides the optical light wave. The inventive laser diode is characterized in that the height of the energy barrier confining the carriers, and the refractive index step providing for optical waveguiding of the light wave are decoupled.
摘要翻译： 具有独立的电子和光限制的激光二极管，被称为解耦约束，其包括有源区，即活性层，单量子阱层或多量子阱层，其嵌入到提供能量势垒的载流子限制结构中 最少在活动区域的一侧。 该能量屏障将载流子泄漏减少到有源区域外。 载体限制结构被嵌入到引导光波的光限制结构中。 本发明的激光二极管的特征在于限制载流子的能量势垒的高度以及为光波的光波导提供的折射率步骤是去耦合的。
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4.发明授权
公开(公告)号：US5305340A
公开(公告)日：1994-04-19
申请号：US991009
申请日：1992-12-16
申请人： Arsam Antreasyan , Myra N. Boenke , Greg Costrini , Kurt R. Grebe , Christoph Harder , Peter D. Hoh
发明人： Arsam Antreasyan , Myra N. Boenke , Greg Costrini , Kurt R. Grebe , Christoph Harder , Peter D. Hoh
CPC分类号： H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S5/22
摘要： A protection configuration for a semiconductor ridge waveguide laser structure is disclosed wherein layers of protective metal in the form of walls, is applied on each side of the ridge element of the ridged layer of the laser structure. The laser structure is then bonded to a mounting plate in a junction side down orientation by solder or a junction side up orientation by wire bonding. The metal layer may be composed of gold.
摘要翻译： 公开了一种用于半导体脊形波导激光器结构的保护配置，其中以壁形式的保护金属层施加在激光结构的脊状脊的脊元件的每一侧上。 然后将激光结构通过焊料或接合面向上取向通过引线接合而以接合面向下取向粘合到安装板。 金属层可以由金构成。
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公开(公告)号：US08908729B2
公开(公告)日：2014-12-09
申请号：US11993304
申请日：2006-06-28
CPC分类号： H01S5/0425 , H01L2224/48463 , H01S5/02276 , H01S5/1039 , H01S5/16 , H01S5/2036 , H01S5/22
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection.
摘要翻译： 半导体激光二极管，特别是具有高光输出功率的广域单发射器（BASE）激光二极管通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的，并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计，特别地通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下，特别地显着地最小化或避免（前）端部部分退化的改进。 这通过以新颖的方式通过沿着激光二极管的纵向延伸，例如通过产生单电流注入点来控制载流子注入即注入电流来实现。 沿着波导。 此外，每个单个或一组电流注入点的供电电流/电压可以单独调节，进一步增强了载流子注入的可控性。
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公开(公告)号：US06782024B2
公开(公告)日：2004-08-24
申请号：US09852994
申请日：2001-05-10
IPC分类号： H01S500
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/168 , H01S5/2216 , H01S5/32316
摘要： Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular significantly minimizing or avoiding (front) end section degradation of such a laser diode and significantly increasing long-term stability compared to prior art designs. This is achieved by establishing one or two “unpumped end sections” of the laser diode. One preferred way of providing such an unpumped end section at one of the laser facets (10, 12) is to insert an isolation layer (11, 13) of predetermined position, size, and shape between the laser diode's semiconductor material and the usually existing metallization (6).
摘要翻译： 半导体激光二极管，特别是大功率AlGaAs基脊波导激光二极管，通常用作光电子学中所谓的用于光通信线路中的光纤放大器的泵激光二极管。 为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化，本发明涉及这种器件的改进的设计，特别地显着地最小化或避免了这种激光（前端）部分退化的改进 二极管，并且与现有技术设计相比显着提高了长期稳定性。 这是通过建立激光二极管的一个或两个“未使用的端部”来实现的。 在激光刻面（10,12）中的一个上提供这种未卷边端部的一种优选方式是将预定位置，尺寸和形状的隔离层（11,13）插入激光二极管的半导体材料和通常存在的 金属化（6）。
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公开(公告)号：US20100220762A1
公开(公告)日：2010-09-02
申请号：US11993247
申请日：2006-06-28
IPC分类号： H01S5/042
CPC分类号： H01S5/0425 , H01S5/1053 , H01S5/1064 , H01S5/168 , H01S5/2036 , H01S5/2216 , H01S5/2231
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided. To this, a current-blocking isolation layer (14) is shaped at its edge or border in such a way that it shows an uneven or partly discontinuous mechanical structure leading to a decreasing effective isolation towards the edge of said isolation layer, thus providing an essentially non-abrupt or even approximately continuous transition between isolated and non-isolated areas.
摘要翻译： 半导体激光二极管，特别是具有高光输出功率的广域单发射极（BASE）激光二极管，通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的，并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计，特别是通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下显着地最小化或避免这种激光二极管的劣化的改进。 与现有技术的设计相比，这种激光二极管（前端）部分退化的最小化或避免显着增加了长期稳定性。 这是通过控制在其小面附近的激光二极管的载流子注入，以避免突然的注入电流峰值来实现的。 为此，电流阻挡隔离层（14）在其边缘或边界处成形为使得其显示不均匀或部分不连续的机械结构，导致朝向所述隔离层的边缘的有效隔离减小，从而提供 在隔离区域和非隔离区域之间基本上非突然或甚至近似连续的过渡。
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公开(公告)号：US5284792A
公开(公告)日：1994-02-08
申请号：US74530
申请日：1993-06-11
CPC分类号： H01S5/0201 , H01S5/0202 , Y10S148/028
摘要： A method for full-wafer processing of laser diodes with cleaved facets combining the advantages of full-wafer processing, to date known from processing lasers with etched facets, with the advantages of cleaved facets. The steps being: defining the position of the facets to be cleaved by scribing marks into the top surface of a laser structure comprising epitaxially grown layers, these scribed marks being perpendicular to the optical axis of the lasers to be made, the scribed marks being parallel, their distance (l.sub.c) defining the length of the laser cavities and the distance (l.sub.b) between the facets of neighboring laser diodes; and covering the uppermost portion with an etch mask pattern which provides for etch windows between the scribed marks defining the position of facets of neighboring lasers; and etching trenches into an upper portion of the structure defined by the etch windows; and partly underetching the upper portion during a second etch step such that the laser facets can be defined by cleaving the upper portion along the scribed marks without cleaving the whole laser structure; and ultrasonically or mechanically cleaving the upper portions being underetched along the scribed marks; and separating the laser diodes by cleaving them between neighboring lasers.
摘要翻译： 具有切割面的激光二极管的全晶片处理方法，其结合了全晶片处理的优点，至今已知从具有蚀刻面的加工激光器以及切割面的优点。 步骤是：通过将标记划分成包括外延生长层的激光器结构的顶表面来界定要切割的刻面的位置，这些划线标记垂直于待制造的激光器的光轴，划线标记是平行的 ，它们的距离（lc）限定激光腔的长度和相邻激光二极管的面之间的距离（lb）; 并用蚀刻掩模图案覆盖最上部分，该蚀刻掩模图案在限定相邻激光器的小面的位置的划线标记之间提供蚀刻窗口; 并将沟槽蚀刻成由蚀刻窗口限定的结构的上部; 并且在第二蚀刻步骤期间部分地去除所述上部，使得所述激光刻面可以通过沿着所述划刻标记断开所述上部而不使所述整个激光结构断裂来限定; 并且超声或机械地切割沿所述划线标记未被去除的上部; 并通过在相邻激光器之间切割激光二极管来分离激光二极管。
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公开(公告)号：US08111727B2
公开(公告)日：2012-02-07
申请号：US11993247
申请日：2006-06-28
IPC分类号： H01S5/00
CPC分类号： H01S5/0425 , H01S5/1053 , H01S5/1064 , H01S5/168 , H01S5/2036 , H01S5/2216 , H01S5/2231
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided. To this, a current-blocking isolation layer (14) is shaped at its edge or border in such a way that it shows an uneven or partly discontinuous mechanical structure leading to a decreasing effective isolation towards the edge of said isolation layer, thus providing an essentially non-abrupt or even approximately continuous transition between isolated and non-isolated areas.
摘要翻译： 半导体激光二极管，特别是具有高光输出功率的广域单发射极（BASE）激光二极管，通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的，并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计，特别是通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下显着地最小化或避免这种激光二极管的劣化的改进。 与现有技术的设计相比，这种激光二极管（前端）部分退化的最小化或避免显着增加了长期稳定性。 这是通过控制在其小面附近的激光二极管的载流子注入，以避免突然的注入电流峰值来实现的。 为此，电流阻挡隔离层（14）在其边缘或边界处成形为使得其显示不均匀或部分不连续的机械结构，导致朝向所述隔离层的边缘的有效隔离减小，从而提供 在隔离区域和非隔离区域之间基本上非突然或甚至近似连续的过渡。
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公开(公告)号：US20100189152A1
公开(公告)日：2010-07-29
申请号：US11993304
申请日：2006-06-28
CPC分类号： H01S5/0425 , H01L2224/48463 , H01S5/02276 , H01S5/1039 , H01S5/16 , H01S5/2036 , H01S5/22
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection.
摘要翻译： 半导体激光二极管，特别是具有高光输出功率的广域单发射器（BASE）激光二极管通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的，并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计，特别地通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下，特别地显着地最小化或避免（前）端部部分退化的改进。 这通过以新颖的方式通过沿着激光二极管的纵向延伸，例如通过产生单电流注入点来控制载流子注入即注入电流来实现。 沿着波导。 此外，每个单个或一组电流注入点的供电电流/电压可以单独调节，进一步增强了载流子注入的可控性。
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