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1.发明申请Method for Integrating Functional Nanostructures Into Microelectric and Nanoelectric circuits 审中-公开将功能纳米结构纳入微电和纳米电路的方法公开(公告)号：US20090173527A1
公开(公告)日：2009-07-09
申请号：US11990265
申请日：2006-07-27
申请人： Annegret Benke , Gerald Eckstein , Oliver Jost , Michael Mertig , Daniel Sickert , Sebastian Taeger
发明人： Annegret Benke , Gerald Eckstein , Oliver Jost , Michael Mertig , Daniel Sickert , Sebastian Taeger
CPC分类号： H01L51/102 , B82Y10/00 , B82Y30/00 , H01L51/0048
摘要： A nanostructure is provided on a substrate by forming at least one multi-electrode arrangement on the substrate, wherein said electrodes comprise respective electrode areas projected with respect to the opposite electrode ends which extend along a line in such a way that the adjacent ends produce a respectively frequency time-variable potential difference. A suspension of nano-object such as nanotubes, nanowires and/or carbon nanotubes is produced and then transferred to the substrate between the adjacent ends. The assembly of respective individual nano-objects is dielectrophoreticly deposited on the line between said adjacent ends, and the assembly of respective nano-objects is fused in the area of the ends in such a way that the nanostructure is formed.
摘要翻译： 通过在衬底上形成至少一个多电极布置在衬底上提供纳米结构，其中所述电极包括相对于相对电极端部突出的相应电极区域，所述相对电极端部沿着一条线延伸，使得相邻端部产生 分别为频率时变电位差。 产生纳米材料如纳米管，纳米线和/或碳纳米管的悬浮液，然后转移到相邻端之间的基底。 各个单独的纳米物体的组件被介电电泳沉积在所述相邻端之间的线上，并且各个纳米物体的组件以端部的区域融合，使得形成纳米结构。
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2.发明授权公开(公告)号：US08896019B2
公开(公告)日：2014-11-25
申请号：US13821281
申请日：2011-08-16
CPC分类号： H01L33/52 , H01L33/42 , H01L33/46 , H01L33/56 , H01L2924/0002 , H01L2933/0016 , H01L2933/005 , H01L2924/00
摘要： A thin-film encapsulation for an optoelectronic semiconductor body includes a PVD layer deposited by a PVD method, and a CVD layer deposited by a CVD method, wherein the CVD layer is applied directly on the PVD layer, and the CVD layer is etched back such that the CVD layer only fills weak points in the PVD layer.
摘要翻译： 用于光电子半导体器件的薄膜封装包括通过PVD方法沉积的PVD层和通过CVD法沉积的CVD层，其中CVD层直接施加在PVD层上，并且CVD层被蚀刻回 CVD层仅填充PVD层中的弱点。
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3.发明申请公开(公告)号：US20130292736A1
公开(公告)日：2013-11-07
申请号：US13821281
申请日：2011-08-16
IPC分类号： H01L31/0203
CPC分类号： H01L33/52 , H01L33/42 , H01L33/46 , H01L33/56 , H01L2924/0002 , H01L2933/0016 , H01L2933/005 , H01L2924/00
摘要： A thin-film encapsulation for an optoelectronic semiconductor body includes a PVD layer deposited by a PVD method, and a CVD layer deposited by a CVD method, wherein the CVD layer is applied directly on the PVD layer, and the CVD layer is etched back such that the CVD layer only fills weak points in the PVD layer.
摘要翻译： 用于光电子半导体器件的薄膜封装包括通过PVD方法沉积的PVD层和通过CVD法沉积的CVD层，其中CVD层直接施加在PVD层上，并且CVD层被蚀刻回 CVD层仅填充PVD层中的弱点。
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4.发明授权公开(公告)号：US09570662B2
公开(公告)日：2017-02-14
申请号：US14413029
申请日：2012-07-10
申请人： Sebastian Taeger , Michael Huber , Martin Welzel , Karl Engl
发明人： Sebastian Taeger , Michael Huber , Martin Welzel , Karl Engl
CPC分类号： H01L33/54 , H01L33/44 , H01L33/56 , H01L2933/0025 , H01L2933/005
摘要： A method of encapsulating an optoelectronic device includes providing a surface intended to be encapsulated, the surface containing platinum, generating reactive oxygen groups and/or reactive hydroxyl groups on the surface, and depositing a passivation layer by atomic layer deposition on the surface.
摘要翻译： 一种封装光电子器件的方法包括：提供待包封的表面，含有铂的表面，在表面上产生活性氧基和/或反应性羟基，以及通过原子层沉积在表面上沉积钝化层。
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5.发明申请Method for Producing a Light-Emitting Semiconductor Component and Light-Emitting Semiconductor Component 审中-公开产生发光半导体元件和发光半导体元件的方法公开(公告)号：US20130313604A1
公开(公告)日：2013-11-28
申请号：US13991135
申请日：2012-04-11
申请人： Karl Engl , Richard Baisl , Tilman Schlenker , Lutz Hoeppel , Sebastian Taeger , Christian Gaertner
发明人： Karl Engl , Richard Baisl , Tilman Schlenker , Lutz Hoeppel , Sebastian Taeger , Christian Gaertner
CPC分类号： H01L33/52 , H01L33/44 , H01L33/60 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2933/0025 , H01L2924/00014
摘要： A method for producing a light-emitting semiconductor component is specified. A light-emitting semiconductor chip is arranged on a mounting area of a carrier. The semiconductor chip is electrically connected to electrical contact regions on the mounting area. An encapsulation layer is applied to the semiconductor chip by means of atomic layer deposition. All surfaces of the semiconductor chip which are free after mounting and electrical connection are covered with an encapsulation layer. Furthermore, a light-emitting semiconductor component is specified.
摘要翻译： 规定了发光半导体元件的制造方法。 发光半导体芯片布置在载体的安装区域上。 半导体芯片电连接到安装区域上的电接触区域。 通过原子层沉积将封装层施加到半导体芯片。 半导体芯片的安装和电连接后的所有表面都被封装层覆盖。 此外，规定了发光半导体元件。
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公开(公告)号：US08552459B2
公开(公告)日：2013-10-08
申请号：US13129018
申请日：2009-11-05
CPC分类号： H01L33/44 , C08G61/02 , H01L24/24 , H01L24/82 , H01L33/62 , H01L2224/24051 , H01L2924/01327 , H01L2924/12036 , H01L2924/12041 , H01L2924/00
摘要： A radiation-emitting component includes a carrier, a semi-conductor chip arranged on the carrier, wherein the semi-conductor chip includes an active layer to generate electromagnetic radiation and a radiation exit surface, a first and a second contact structure for the electrical contacting of the semi-conductor chip, a first and a second contact layer, wherein the semi-conductor chip is electrically conductively connected to the first contact structure via the first contact layer and to the second contact structure via the second contact layer, a passivation layer arranged on the semi-conductor chip.
摘要翻译： 辐射发射部件包括载体，布置在载体上的半导体芯片，其中半导体芯片包括产生电磁辐射的有源层和辐射出射表面，用于电接触的第一和第二接触结构 所述半导体芯片具有第一和第二接触层，其中所述半导体芯片经由所述第一接触层和所述第二接触结构经由所述第二接触层导电地连接到所述第一接触结构，钝化层 布置在半导体芯片上。
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公开(公告)号：US09373765B2
公开(公告)日：2016-06-21
申请号：US14122134
申请日：2012-04-26
申请人： Markus Maute , Karl Engl , Sebastian Taeger , Robert Walter , Johannes Stocker
发明人： Markus Maute , Karl Engl , Sebastian Taeger , Robert Walter , Johannes Stocker
CPC分类号： H01L33/46 , H01L33/06 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.
摘要翻译： 光电半导体芯片包括半导体材料的半导体本体，p接触层和n接触层。 半导体主体包括用于产生辐射的有源层。 半导体本体包括p侧和n侧，其间布置有源层。 p接触层用于电接触p侧。 n接触层用于电接触n侧1b。 n接触层包含TCO层和镜层，TCO层布置在半导体主体的n侧和镜面层之间。
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公开(公告)号：US20110278621A1
公开(公告)日：2011-11-17
申请号：US13129018
申请日：2009-11-05
CPC分类号： H01L33/44 , C08G61/02 , H01L24/24 , H01L24/82 , H01L33/62 , H01L2224/24051 , H01L2924/01327 , H01L2924/12036 , H01L2924/12041 , H01L2924/00
摘要： A radiation-emitting component includes a carrier, a semi-conductor chip arranged on the carrier, wherein the semi-conductor chip includes an active layer to generate electromagnetic radiation and a radiation exit surface, a first and a second contact structure for the electrical contacting of the semi-conductor chip, a first and a second contact layer, wherein the semi-conductor chip is electrically conductively connected to the first contact structure via the first, contact layer and to the second contact structure via the second contact layer, a passivation layer arranged on the semi-conductor chip.
摘要翻译： 辐射发射部件包括载体，布置在载体上的半导体芯片，其中半导体芯片包括产生电磁辐射的有源层和辐射出射表面，用于电接触的第一和第二接触结构 半导体芯片的第一和第二接触层，其中半导体芯片经由第一接触层和第二接触结构经由第二接触层导电连接到第一接触结构，钝化层 层布置在半导体芯片上。
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