公开(公告)号：US20110147921A1

公开(公告)日：2011-06-23

申请号：US12641496

申请日：2009-12-18

申请人： Anwar A. Mohammed ,  Soon Ing Chew ,  Donald Fowlkes ,  Alexander Komposch ,  Benjamin Pain-Fong Law ,  Michael Opiz Real

发明人： Anwar A. Mohammed ,  Soon Ing Chew ,  Donald Fowlkes ,  Alexander Komposch ,  Benjamin Pain-Fong Law ,  Michael Opiz Real

IPC分类号： H01L23/12 ,  H01L21/50 ,  H05K3/30 ,  B21D31/00

CPC分类号： B21D22/20 ,  H01L23/04 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/291 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2924/157 ,  H01L2924/161 ,  H01L2924/171 ,  H01L2924/3511 ,  H05K3/303 ,  H05K2201/10409 ,  H05K2201/10969 ,  Y02P70/613 ,  Y10T29/4913 ,  H01L2924/014

摘要： A semiconductor package includes a curved body and a plurality of semiconductor die. The curved body includes first and second opposing end regions and an intermediate center region. The curved body has a first inflection point at the center region, a second inflection point at the first end region and a third inflection point at the second end region. The center region has a convex curvature with a minimal extremum at the first inflection point, the first end region has a concave curvature with a maximal extremum at the second inflection point and the second end region has a concave curvature with a maximal extremum at the third inflection point. The plurality of semiconductor die are attached to an upper surface of the curved body between the maximal extrema.

摘要翻译： 半导体封装包括弯曲体和多个半导体管芯。 弯曲体包括第一和第二相对末端区域和中间中心区域。 弯曲体在中心区域具有第一拐点，在第一端部区域具有第二拐点，在第二端部区域具有第三拐点。 中心区域具有在第一拐点处具有最小极值的凸曲率，第一端区域具有在第二拐点处具有最大极值的凹曲率，并且第二端区域具有在第三拐点处具有最大极值的凹曲率 拐点。 多个半导体管芯在最大极值之间附接到弯曲体的上表面。

公开(公告)号：US08314487B2

公开(公告)日：2012-11-20

申请号：US12641496

申请日：2009-12-18

申请人： Anwar A. Mohammed ,  Soon Ing Chew ,  Donald Fowlkes ,  Alexander Komposch ,  Benjamin Pain-Fong Law ,  Michael Opiz Real

发明人： Anwar A. Mohammed ,  Soon Ing Chew ,  Donald Fowlkes ,  Alexander Komposch ,  Benjamin Pain-Fong Law ,  Michael Opiz Real

IPC分类号： H01L23/34

CPC分类号： B21D22/20 ,  H01L23/04 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/291 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2924/157 ,  H01L2924/161 ,  H01L2924/171 ,  H01L2924/3511 ,  H05K3/303 ,  H05K2201/10409 ,  H05K2201/10969 ,  Y02P70/613 ,  Y10T29/4913 ,  H01L2924/014

摘要： A semiconductor package includes a curved body and a plurality of semiconductor die. The curved body includes first and second opposing end regions and an intermediate center region. The curved body has a first inflection point at the center region, a second inflection point at the first end region and a third inflection point at the second end region. The center region has a convex curvature with a minimal extremum at the first inflection point, the first end region has a concave curvature with a maximal extremum at the second inflection point and the second end region has a concave curvature with a maximal extremum at the third inflection point. The plurality of semiconductor die are attached to an upper surface of the curved body between the maximal extrema.

摘要翻译： 半导体封装包括弯曲体和多个半导体管芯。 弯曲体包括第一和第二相对末端区域和中间中心区域。 弯曲体在中心区域具有第一拐点，在第一端部区域具有第二拐点，在第二端部区域具有第三拐点。 中心区域具有在第一拐点处具有最小极值的凸曲率，第一端区域具有在第二拐点处具有最大极值的凹曲率，并且第二端区域具有在第三拐点处具有最大极值的凹曲率 拐点。 多个半导体管芯在最大极值之间附接到弯曲体的上表面。

公开(公告)号：US08110445B2

公开(公告)日：2012-02-07

申请号：US12436652

申请日：2009-05-06

申请人： Anwar A. Mohammed ,  Soon Ing Chew ,  Donald Fowlkes

发明人： Anwar A. Mohammed ,  Soon Ing Chew ,  Donald Fowlkes

IPC分类号： H01L21/44

CPC分类号： H01L21/50 ,  H01L23/142 ,  H01L23/3735 ,  H01L24/28 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/29144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/3511 ,  H01L2924/0105 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to an embodiment of a high power package, the package includes a copper heat sink, a ceramic lead frame and a semiconductor chip. The copper heat sink has a thermal conductivity of at least 350 W/mK. The ceramic lead frame is attached to the copper heat sink with an epoxy. The semiconductor chip is attached to the copper heat sink on the same side as the lead frame with an electrically conductive material having a melting point of about 280° C. or greater.

摘要翻译： 根据高功率封装的实施例，封装包括铜散热器，陶瓷引线框架和半导体芯片。 铜散热器的热导率至少为350W / mK。 陶瓷引线框架通过环氧树脂连接到铜散热器。 半导体芯片与具有熔点约280℃或更高的导电材料的引线框架在同一侧的铜散热器上附接。

公开(公告)号：US08013429B2

公开(公告)日：2011-09-06

申请号：US12502440

申请日：2009-07-14

申请人： Anwar A. Mohammed ,  Soon Ing Chew ,  Alexander Komposch ,  Christian Andrada

发明人： Anwar A. Mohammed ,  Soon Ing Chew ,  Alexander Komposch ,  Christian Andrada

IPC分类号： H01L23/495

CPC分类号： H01L23/047 ,  H01L23/10 ,  H01L23/36 ,  H01L24/17 ,  H01L2223/6644 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00

摘要： An air cavity package is manufactured by attaching a die to a surface of a copper heat sink, dispensing a bead of epoxy around a periphery of the heat sink surface after the die is attached to the copper heat sink so that the bead of epoxy generally surrounds the die and placing a ceramic window frame on the bead of epoxy. The epoxy is cured to attach a bottom surface of the ceramic window frame to the copper heat sink.

摘要翻译： 通过将模具附接到铜散热器的表面来制造空气腔封装，在裸片附接到铜散热器之后，在散热器表面的周围分配环氧树脂珠，使得环氧树脂通常围绕 模具，并将陶瓷窗框放置在环氧树脂珠上。 固化环氧树脂以将陶瓷窗框的底面附着在铜散热片上。

公开(公告)号：US08110915B2

公开(公告)日：2012-02-07

申请号：US12580304

申请日：2009-10-16

申请人： Donald Fowlkes ,  Soon Ing Chew

发明人： Donald Fowlkes ,  Soon Ing Chew

IPC分类号： H01L23/48 ,  H01L21/52

CPC分类号： H01L23/66 ,  H01L23/3677 ,  H01L23/49861 ,  H01L23/60 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0655 ,  H01L25/16 ,  H01L2223/6655 ,  H01L2224/32188 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/45099

摘要： An RF semiconductor package includes a substrate having generally planar top and bottom surfaces. The substrate includes a metallic base region and one or more metallic signal terminal regions extending from the top surface to the bottom surface, and an insulative material separating the metallic regions from one another. The bottom surface of an RF semiconductor die is surface-mounted to the base region at the top substrate surface. The RF semiconductor die has a terminal pad disposed at a top surface of the RF semiconductor die. The terminal pad is electrically connected to one of the signal terminal regions at the top substrate surface. A lid is attached to the top substrate surface so that the RF semiconductor die is enclosed by the lid to form an open-cavity around the RF semiconductor die. The base and signal terminal regions are configured for surface-mounting at the bottom substrate surface.

摘要翻译： RF半导体封装包括具有大致平坦的顶表面和底表面的基板。 基板包括金属基区域和从顶表面延伸到底表面的一个或多个金属信号端子区域和将金属区域彼此分开的绝缘材料。 RF半导体管芯的底表面被表面安装到顶部衬底表面的基底区域。 RF半导体管芯具有设置在RF半导体管芯的顶表面处的端子焊盘。 端子焊盘电连接到顶部衬底表面处的信号端子区域之一。 将盖子附接到顶部衬底表面，使得RF半导体管芯由盖子封闭以在RF半导体管芯周围形成开放空腔。 基极和信号端子区域被配置为在底部基板表面处表面安装。

公开(公告)号：US20110089529A1

公开(公告)日：2011-04-21

申请号：US12580304

申请日：2009-10-16

申请人： Donald Fowlkes ,  Soon Ing Chew

发明人： Donald Fowlkes ,  Soon Ing Chew

IPC分类号： H01L23/48 ,  H01L27/10 ,  H01L21/98

CPC分类号： H01L23/66 ,  H01L23/3677 ,  H01L23/49861 ,  H01L23/60 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0655 ,  H01L25/16 ,  H01L2223/6655 ,  H01L2224/32188 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/45099

摘要： An RF semiconductor package includes a substrate having generally planar top and bottom surfaces. The substrate includes a metallic base region and one or more metallic signal terminal regions extending from the top surface to the bottom surface, and an insulative material separating the metallic regions from one another. The bottom surface of an RF semiconductor die is surface-mounted to the base region at the top substrate surface. The RF semiconductor die has a terminal pad disposed at a top surface of the RF semiconductor die. The terminal pad is electrically connected to one of the signal terminal regions at the top substrate surface. A lid is attached to the top substrate surface so that the RF semiconductor die is enclosed by the lid to form an open-cavity around the RF semiconductor die. The base and signal terminal regions are configured for surface-mounting at the bottom substrate surface.

摘要翻译： RF半导体封装包括具有大致平坦的顶表面和底表面的基板。 基板包括金属基区域和从顶表面延伸到底表面的一个或多个金属信号端子区域和将金属区域彼此分开的绝缘材料。 RF半导体管芯的底表面被表面安装到顶部衬底表面的基底区域。 RF半导体管芯具有设置在RF半导体管芯的顶表面处的端子焊盘。 端子焊盘电连接到顶部衬底表面处的信号端子区域之一。 将盖子附接到顶部衬底表面，使得RF半导体管芯由盖子封闭以在RF半导体管芯周围形成开放空腔。 基极和信号端子区域被配置为在底部基板表面处表面安装。

公开(公告)号：US20130256858A1

公开(公告)日：2013-10-03

申请号：US13432333

申请日：2012-03-28

申请人： Alexander Komposch ,  Soon Ing Chew ,  Brian Condie

发明人： Alexander Komposch ,  Soon Ing Chew ,  Brian Condie

IPC分类号： H01L23/495 ,  H01L21/60

CPC分类号： H01L23/49844 ,  H01L21/76898 ,  H01L23/047 ,  H01L23/06 ,  H01L23/10 ,  H01L23/13 ,  H01L23/142 ,  H01L23/345 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/5226 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2224/8385 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/1304 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/1531 ,  H01L2924/16251 ,  H01L2924/16787 ,  H01L2924/19041 ,  H01L2924/19105 ,  Y02P80/30 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor package includes a baseplate having a die attach region and a peripheral region, a transistor die having a first terminal attached to the die attach region, and a second terminal and a third terminal facing away from the baseplate, and a frame including an electrically insulative member having a first side attached to the peripheral region of the baseplate, a second side facing away from the baseplate, a first metallization at the first side of the insulative member and a second metallization at the second side of the insulative member. The insulative member extends outward beyond a lateral sidewall of the baseplate. The first metallization is attached to the part of the first side which extends outward beyond the lateral sidewall of the baseplate. The first and second metallizations are electrically connected at a region of the insulative member spaced apart from the lateral sidewall of the baseplate.

公开(公告)号：US08907467B2

公开(公告)日：2014-12-09

申请号：US13432333

申请日：2012-03-28

申请人： Alexander Komposch ,  Soon Ing Chew ,  Brian Condie

发明人： Alexander Komposch ,  Soon Ing Chew ,  Brian Condie

IPC分类号： H01L23/48 ,  H01L21/00 ,  H05K7/00 ,  H01L21/768

CPC分类号： H01L23/49844 ,  H01L21/76898 ,  H01L23/047 ,  H01L23/06 ,  H01L23/10 ,  H01L23/13 ,  H01L23/142 ,  H01L23/345 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/5226 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2224/8385 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/1304 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/1531 ,  H01L2924/16251 ,  H01L2924/16787 ,  H01L2924/19041 ,  H01L2924/19105 ,  Y02P80/30 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor package includes a baseplate having a die attach region and a peripheral region, a transistor die having a first terminal attached to the die attach region, and a second terminal and a third terminal facing away from the baseplate, and a frame including an electrically insulative member having a first side attached to the peripheral region of the baseplate, a second side facing away from the baseplate, a first metallization at the first side of the insulative member and a second metallization at the second side of the insulative member. The insulative member extends outward beyond a lateral sidewall of the baseplate. The first metallization is attached to the part of the first side which extends outward beyond the lateral sidewall of the baseplate. The first and second metallizations are electrically connected at a region of the insulative member spaced apart from the lateral sidewall of the baseplate.

摘要翻译： 半导体封装包括具有管芯附着区域和外围区域的基板，具有附接到管芯附接区域的第一端子的晶体管管芯以及背离所述基板的第二端子和第三端子，以及框架， 绝缘构件，其具有附接到所述基板的周边区域的第一侧，远离所述基板的第二侧，所述绝缘构件的所述第一侧处的第一金属化层和所述绝缘构件的第二侧的第二金属化。 绝缘构件向外延伸超过基板的侧向侧壁。 第一金属化附接到第一侧的部分，其向外延伸超过基板的侧向侧壁。 第一和第二金属化物在与基板的侧向侧壁间隔开的绝缘构件的区域处电连接。

公开(公告)号：US07811862B2

公开(公告)日：2010-10-12

申请号：US12337347

申请日：2008-12-17

申请人： Anwar A. Mohammad ,  Soon Ing Chew

发明人： Anwar A. Mohammad ,  Soon Ing Chew

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L23/3735 ,  H01L23/3736 ,  H01L23/49513 ,  H01L24/27 ,  H01L24/29 ,  H01L24/31 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/274 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/83201 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to one embodiment, an electronic package includes a semiconductor die, a heat sink and a metallization layer interposed between the semiconductor die and the heat sink. The metallization layer attaches the semiconductor die to the heat sink. The metallization layer has a thickness of about 5 μm or less and a thermal conductivity of about 60 W/m·K or greater.

摘要翻译： 根据一个实施例，电子封装包括插入在半导体管芯和散热器之间的半导体管芯，散热器和金属化层。 金属化层将半导体管芯附接到散热器。 金属化层的厚度为约5μm以下，导热率为约60W / m·K以上。