ELECTROPLATING WITH REDUCED AIR BUBBLE DEFECTS
    3.
    发明申请
    ELECTROPLATING WITH REDUCED AIR BUBBLE DEFECTS 审中-公开
    电镀具有减少的空气泡沫缺陷

    公开(公告)号:US20160237584A1

    公开(公告)日:2016-08-18

    申请号:US14620984

    申请日:2015-02-12

    CPC classification number: C25D5/34 C25D5/022 C25D7/12 C25D17/001 C25D17/004

    Abstract: A method for processing a wafer includes holding the wafer in a face-up position with a seal ring contacting the wafer on a contact circumference. A bead of liquid is applied onto the entire contact circumference, with the bead of liquid contacting the wafer and the seal ring. The wafer is then inverted into a head-down position, lowered into contact with electrolyte and plated with a conductive film. Formation of the bead of liquid helps to displace air bubbles as the wafer is immersed into the electrolyte which reduces plating defects.

    Abstract translation: 一种用于处理晶片的方法包括将晶片保持在面朝上位置,其中密封环在接触圆周上接触晶片。 液体珠被施加到整个接触圆周上,液体珠接触晶片和密封环。 然后将晶片倒置成下降位置,降低成与电解质接触并镀上导电膜。 当晶片浸入电解质中时,液体珠的形成有助于置换气泡,这减少了电镀缺陷。

Patent Agency Ranking