公开(公告)号：US10697063B2

公开(公告)日：2020-06-30

申请号：US14610489

申请日：2015-01-30

Applicant: Applied Materials, Inc.

Inventor： Lai Zhao ,  Gaku Furuta ,  Qunhua Wang ,  Robin L. Tiner ,  Beom Soo Park ,  Soo Young Choi ,  Sanjay D. Yadav

IPC: C23C16/00 ,  C23C16/455 ,  H01J37/32 ,  C23C16/458

Abstract: The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body.

公开(公告)号：US10087524B2

公开(公告)日：2018-10-02

申请号：US14275835

申请日：2014-05-12

Applicant: Applied Materials, Inc.

Inventor： Robin L. Tiner ,  Soo Young Choi ,  Qunhua Wang ,  Jrjyan Jerry Chen

IPC: B05B1/00 ,  C23C16/455 ,  H01J37/32

Abstract: Embodiments of the present invention generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber is provided. The gas distribution showerhead comprises a body having a first side and a second side opposite the first side, and a plurality of gas passages formed through the body, the gas passages comprising a first bore formed in the first side that is fluidly coupled to a second bore formed in the second side by a restricting orifice, and a suspension feature formed in the first bore of at least one of the gas passages.

公开(公告)号：US10312058B2

公开(公告)日：2019-06-04

申请号：US15719465

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC: H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/509

Abstract: Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support.

公开(公告)号：US10262837B2

公开(公告)日：2019-04-16

申请号：US14932618

申请日：2015-11-04

Applicant: Applied Materials, Inc.

Inventor： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC: H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/509

Abstract: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

公开(公告)号：US09818606B2

公开(公告)日：2017-11-14

申请号：US14281492

申请日：2014-05-19

Applicant: Applied Materials, Inc.

Inventor： Qunhua Wang ,  Lai Zhao ,  Soo Young Choi

IPC: H01L21/00 ,  H01L21/02 ,  C23C16/24 ,  C23C16/56

CPC classification number: H01L21/02595 ,  C23C16/24 ,  C23C16/56 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02686

Abstract: The embodiments described herein generally relate to methods for forming an amorphous silicon structure that may be used in thin film transistor devices. In embodiments disclosed herein, the amorphous silicon layer is deposited using a silicon-based gas with an activation gas comprising a high concentration of inert gas and a low concentration of hydrogen-based gas. The activation gas combination allows for a good deposition profile of the amorphous silicon layer from the edge of the shadow frame which is translated to the polycrystalline silicon layer post-annealing.

公开(公告)号：US11773489B2

公开(公告)日：2023-10-03

申请号：US14610531

申请日：2015-01-30

Applicant: Applied Materials, Inc.

Inventor： Lai Zhao ,  Qunhua Wang ,  Robin L. Tiner ,  Soo Young Choi ,  Beom Soo Park

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/458

CPC classification number: C23C16/45591 ,  C23C16/4585 ,  H01J37/32449 ,  H01J37/32715

Abstract: The present disclosure relates to a gas confiner assembly designed to reduce the non-uniform deposition rates by confining the gas flow and changing the local gas flow distribution near the edge regions of the substrate. The material, size, shape and other features of the gas confiner assembly can be varied based on the processing requirements and associated deposition rates. In one embodiment, a gas confiner assembly for a processing chamber comprises a gas confiner configured to decrease gas flow and compensate for high deposition rates on edge regions of substrates. The gas confiner assembly also comprises a cover disposed below the gas confiner. The cover is configured to prevent a substrate support from being exposed to plasma.

公开(公告)号：US09299558B2

公开(公告)日：2016-03-29

申请号：US14221421

申请日：2014-03-21

Applicant: Applied Materials, Inc.

Inventor： Lai Zhao ,  Gaku Furuta ,  Qunhua Wang ,  Soo Young Choi

IPC: H01L21/44 ,  H01L21/02 ,  H01J37/32

CPC classification number: H01L21/02211 ,  C23C16/402 ,  C23C16/4404 ,  H01J37/32853 ,  H01J37/32862 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02301 ,  H01L29/4908 ,  H01L29/7869

Abstract: A method of depositing a film that includes heterogeneously seasoning a processing chamber is provided. After a processing chamber is cleaned, a heterogeneous seasoning deposition is performed to stabilize the deposition rate drift before a substrate may be positioned therein. A film, such as a SiOx film, may then be deposited on the substrate. The substrate may then be removed from the processing chamber and replaced with a second substrate. A film may then be deposited on the second substrate. The substrate positioning, deposition, and substrate removal cycle may be repeated until the cleaning cycle is complete. The processing chamber may be cleaned a second time, and another series of substrates may be similarly processed.

Abstract translation: 提供了一种沉积包括不均匀调味处理室的膜的方法。 在清洁处理室之后，执行异质调味沉积以在沉积速率漂移之前稳定基底可能位于其中。 然后可以将诸如SiOx膜的膜沉积在基底上。 然后可以将基板从处理室移除并用第二基板代替。 然后可以在第二基板上沉积膜。 可以重复衬底定位，沉积和衬底去除循环，直到清洁循环完成。 可以第二次清洁处理室，并且可以类似地处理另一系列的基板。

公开(公告)号：US09048099B2

公开(公告)日：2015-06-02

申请号：US14049197

申请日：2013-10-08

Applicant: Applied Materials, Inc.

Inventor： Qunhua Wang ,  Lai Zhao ,  Soo Young Choi

IPC: H01L21/02

CPC classification number: H01L21/0262 ,  C23C16/24 ,  C23C16/4405 ,  C23C16/56 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675

Abstract: The embodiments described herein generally relate to methods for forming a multi-layer amorphous silicon structure that may be used in thin film transistor devices. In one embodiment, a method includes positioning a substrate comprising a buffer layer in a process chamber, the process chamber comprising a processing region, forming a plurality of amorphous silicon layers and annealing the amorphous silicon layers to form a polycrystalline silicon layer. Forming the plurality of layers includes delivering a silicon-containing precursor and a first activation gas to the processing region to deposit a first amorphous silicon layer over the buffer layer, the silicon-containing precursor and the first activation gas being activated by a plasma and maintaining a continuous flow of the silicon-containing precursor while delivering a second activation gas, without the first activation gas, to the processing region to deposit a second silicon layer on the first silicon layer.

Abstract translation: 本文描述的实施例通常涉及用于形成可用于薄膜晶体管器件的多层非晶硅结构的方法。 在一个实施例中，一种方法包括将包括缓冲层的衬底定位在处理室中，所述处理室包括处理区域，形成多个非晶硅层并退火非晶硅层以形成多晶硅层。 形成多个层包括将含硅前体和第一活化气体输送到处理区域以在缓冲层上沉积第一非晶硅层，含硅前体和第一活化气体被等离子体激活并维持 连续流动的含硅前体，同时将没有第一活化气体的第二活化气体输送到处理区域，以在第一硅层上沉积第二硅层。