公开(公告)号：US20190229007A1

公开(公告)日：2019-07-25

申请号：US16249716

申请日：2019-01-16

Applicant: APPLIED MATERIALS, INC.

Inventor： MUHANNAD MUSTAFA ,  MUHAMMAD M. RASHEED ,  YU LEI ,  AVGERINOS V. GELATOS ,  VIKASH BANTHIA ,  VICTOR H. CALDERON ,  SHI WEI TOH ,  YUNG-HSIN LEE ,  ANINDITA SEN

IPC: H01L21/687 ,  H01J37/32

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a process kit for a substrate support includes: an upper edge ring made of quartz and having an upper surface and a lower surface, wherein the upper surface is substantially planar and the lower surface includes a stepped lower surface to define a radially outermost portion and a radially innermost portion of the upper edge ring.

公开(公告)号：US20200251340A1

公开(公告)日：2020-08-06

申请号：US16775752

申请日：2020-01-29

Applicant: APPLIED MATERIALS, INC.

Inventor： ROEY SHAVIV ,  AVGERINOS V. GELATOS ,  ISMAIL EMESH ,  XIKUN WANG ,  YU LEI

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/02

Abstract: Methods and apparatus for filling a feature disposed in a substrate, including: depositing a first metal within the feature to a first predetermined thickness in a first process chamber; etching the first metal to remove a first portion of the metal at a top of the feature in a second process chamber different than the first process chamber to form an exposed surface of the first metal, and selectively depositing a second metal atop the exposed surface of the first metal within the feature to a second predetermined thickness in a third process chamber; wherein etching the first metal and selectively depositing a second metal are performed without oxygen contacting the top surface.

公开(公告)号：US20220359209A1

公开(公告)日：2022-11-10

申请号：US17869496

申请日：2022-07-20

Applicant: APPLIED MATERIALS, INC.

Inventor： TAKASHI KURATOMI ,  I-CHENG CHEN ,  AVGERINOS V. GELATOS ,  PINGYAN LEI ,  MEI CHANG ,  XIANMIN TANG

IPC: H01L21/285 ,  H01J37/32 ,  C23C16/42

Abstract: Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl4), hydrogen (H2) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees C.; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.

公开(公告)号：US20200211852A1

公开(公告)日：2020-07-02

申请号：US16705119

申请日：2019-12-05

Applicant: APPLIED MATERIALS, INC.

Inventor： TAKASHI KURATOMI ,  I-CHENG CHEN ,  AVGERINOS V. GELATOS ,  PINGYAN LEI ,  MEI CHANG ,  XIANMIN TANG

IPC: H01L21/285 ,  H01J37/32 ,  C23C16/42

Abstract: Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl4), hydrogen (H2) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees Celsius; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.

公开(公告)号：US20190078210A1

公开(公告)日：2019-03-14

申请号：US15702234

申请日：2017-09-12

Applicant: APPLIED MATERIALS, INC.

Inventor： FARUK GUNGOR ,  DIEN-YEH WU ,  JOEL M. HUSTON ,  MEI CHANG ,  XIAOXIONG YUAN ,  KAZUYA DAITO ,  AVGERINOS V. GELATOS ,  TAKASHI KURATOMI ,  YU CHANG ,  BIN CAO

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/458 ,  C23C16/505

Abstract: Apparatus for processing a substrate are provided herein. In some embodiments a showerhead assembly includes a gas distribution plate having a plurality of apertures; a holder having a wall, an radially inwardly extending flange extending from a lower portion of the wall and coupled to the gas distribution plate, and a radially outwardly extending flange extending from an upper portion of the wall, wherein the wall has a thickness between about 0.015 inches and about 0.2 inches; and a heating apparatus disposed above and spaced apart from the gas distribution plate, wherein the heating apparatus includes a heater configured to heat the gas distribution plate.

公开(公告)号：US20160133563A1

公开(公告)日：2016-05-12

申请号：US14931417

申请日：2015-11-03

Applicant: APPLIED MATERIALS, INC.

Inventor： HUA AI ,  JIANG LU ,  AVGERINOS V. GELATOS ,  PAUL F. MA ,  SANG HO YU ,  FENG Q. LIU ,  XINYU FU ,  WEIFENG YE

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L21/76879 ,  C23C16/04 ,  C23C16/06 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for selectively depositing a cobalt layer are provided herein. In some embodiments, methods for selectively depositing a cobalt layer include: exposing a substrate to a first process gas to passivate an exposed dielectric surface, wherein the substrate comprises a dielectric layer having an exposed dielectric surface and a metal layer having an exposed metal surface; and selectively depositing a cobalt layer atop the exposed metal surface using a thermal deposition process.

Abstract translation: 本文提供了选择性沉积钴层的方法。 在一些实施例中，用于选择性地沉积钴层的方法包括：将衬底暴露于第一工艺气体以钝化暴露的电介质表面，其中所述衬底包括具有暴露的电介质表面的电介质层和具有暴露的金属表面的金属层; 并且使用热沉积工艺选择性地在暴露的金属表面上沉积钴层。

公开(公告)号：US20150140812A1

公开(公告)日：2015-05-21

申请号：US14520989

申请日：2014-10-22

Applicant: APPLIED MATERIALS, INC.

Inventor： BHUSHAN N. ZOPE ,  AVGERINOS V. GELATOS

IPC: H01L21/3213 ,  H01L29/66

CPC classification number: H01L21/32136 ,  C23F4/00 ,  H01J37/32082 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/32115 ,  H01L21/7684 ,  H01L23/53257 ,  H01L29/66545 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of methods for etching cobalt metal using fluorine radicals are provided herein. In some embodiments, a method of etching a cobalt layer in a substrate processing chamber includes: forming a plasma from a process gas comprising a fluorine-containing gas; and exposing the cobalt layer to fluorine radicals from the plasma while maintaining the cobalt layer at a temperature of about 50 to about 500 degrees Celsius to etch the cobalt layer.

Abstract translation: 本文提供了使用氟自由基蚀刻钴金属的方法的实施例。 在一些实施例中，蚀刻衬底处理室中的钴层的方法包括：从包含含氟气体的工艺气体形成等离子体; 并将钴层从等离子体暴露于氟自由基，同时将钴层保持在约50至约500摄氏度的温度以蚀刻钴层。

公开(公告)号：US20150140233A1

公开(公告)日：2015-05-21

申请号：US14543064

申请日：2014-11-17

Applicant: APPLIED MATERIALS, INC.

Inventor： BHUSHAN N. ZOPE ,  AVGERINOS V. GELATOS

IPC: C23C16/50 ,  C23C16/505 ,  C23C16/24 ,  C23C16/06

CPC classification number: C23C16/045 ,  C23C14/046 ,  C23C16/0281 ,  C23C16/06 ,  C23C16/24 ,  C23C16/50

Abstract: Methods for depositing cobalt in features of a substrate include providing a substrate to a process chamber, the substrate having a first surface, a feature formed in the first surface comprising an opening defined by one or more sidewalls, a bottom surface, and upper corners, and the substrate having a first layer formed atop the first surface and the opening, wherein a thickness of the first layer is greater proximate the upper corners of the opening than at the sidewalls and bottom of the opening; exposing the substrate to a plasma formed from a silicon-containing gas to deposit a silicon layer predominantly onto a portion of the first layer atop the first surface of the substrate; and depositing a cobalt layer atop the substrate to fill the opening, wherein the silicon layer inhibits deposition of cobalt on the portion of the first layer atop the first surface of the substrate.

Abstract translation: 在基板的特征中沉积钴的方法包括向处理室提供基板，所述基板具有第一表面，形成在第一表面中的特征包括由一个或多个侧壁限定的开口，底表面和上角， 并且所述基板具有形成在所述第一表面和所述开口顶部的第一层，其中所述第一层的厚度在所述开口的所述上角附近大于所述开口的侧壁和底部; 将衬底暴露于由含硅气体形成的等离子体，以将硅层主要沉积在衬底的第一表面顶部的第一层的一部分上; 以及在所述衬底顶部沉积钴层以填充所述开口，其中所述硅层抑制在所述衬底的所述第一表面顶部的所述第一层的所述部分上的钴沉积。

公开(公告)号：US20140273515A1

公开(公告)日：2014-09-18

申请号：US14211156

申请日：2014-03-14

Applicant: Applied Materials, Inc.

Inventor： AVGERINOS V. GELATOS ,  SRINIVAS GANDIKOTA ,  SESHADRI GANGULI ,  XINYU FU ,  BO ZHENG ,  YU LEI

IPC: H01L21/67 ,  H01L21/285

CPC classification number: H01L21/6723 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/285 ,  H01L21/28525 ,  H01L21/28568 ,  H01L21/6719 ,  H01L21/67207 ,  H01L29/4958 ,  H01L29/4966

Abstract: Embodiments of an integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices are provided herein. In some embodiments, an integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices may include a first deposition chamber configured to deposit a first layer atop the substrate, the first layer comprising titanium oxide (TiO2) or selenium (Se); a second deposition chamber configured to deposit a second layer atop the first layer, the second layer comprising titanium; a third deposition chamber configured to deposit a third layer atop the second layer, the third layer comprising one of titanium nitride (TiN) or tungsten nitride (WN).

Abstract translation: 本文提供了用于制造n型金属氧化物半导体（NMOS）器件的集成平台的实施例。 在一些实施例中，用于制造n型金属氧化物半导体（NMOS）器件的集成平台可以包括第一沉积室，其被配置为在衬底顶部沉积第一层，第一层包含氧化钛（TiO 2）或硒（Se）; 第二沉积室，被配置为在所述第一层顶部沉积第二层，所述第二层包含钛; 第三沉积室，被配置为在所述第二层顶部沉积第三层，所述第三层包括氮化钛（TiN）或氮化钨（WN）之一。