公开(公告)号：US20170131389A1

公开(公告)日：2017-05-11

申请号：US15338660

申请日：2016-10-31

申请人： Artilux Corporation ,  Artilux Inc.

发明人： Yun-Chung Na ,  Che-Fu Liang

IPC分类号： G01S7/486 ,  G01S17/10 ,  H01L29/161 ,  H01L31/103 ,  H01L27/146

CPC分类号： G01S7/4863 ,  G01S17/10 ,  G01S17/89 ,  H01L27/14609 ,  H01L27/14629 ,  H01L27/14643 ,  H01L29/161 ,  H01L31/1037

摘要： An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.

公开(公告)号：US20190033432A1

公开(公告)日：2019-01-31

申请号：US16146656

申请日：2018-09-28

申请人： Artilux Corporation ,  Artilux Inc.

发明人： Yun-Chung Na ,  Che-Fu Liang

IPC分类号： G01S7/486 ,  G01S17/89 ,  G01S17/10 ,  H01L29/161 ,  H01L27/146 ,  H01L31/103

CPC分类号： G01S7/4863 ,  G01S17/10 ,  G01S17/89 ,  H01L27/14609 ,  H01L27/14629 ,  H01L27/14643 ,  H01L29/161 ,  H01L31/1037

摘要： An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.

公开(公告)号：US10353056B2

公开(公告)日：2019-07-16

申请号：US16146656

申请日：2018-09-28

申请人： Artilux Corporation ,  Artilux Inc.

发明人： Yun-Chung Na ,  Che-Fu Liang

IPC分类号： G01C3/08 ,  G01S7/486 ,  G01S17/10 ,  H01L27/146 ,  H01L29/161 ,  H01L31/103 ,  G01S17/89

摘要： An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.

公开(公告)号：US10310060B2

公开(公告)日：2019-06-04

申请号：US16153631

申请日：2018-10-05

申请人： Artilux Corporation ,  Artilux Inc.

发明人： Yun-Chung Na ,  Che-Fu Liang

IPC分类号： G01C3/08 ,  G01S7/486 ,  H01L29/161 ,  H01L27/146 ,  H01L31/103 ,  G01S17/10 ,  G01S17/89

摘要： An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.

公开(公告)号：US20190049564A1

公开(公告)日：2019-02-14

申请号：US16153631

申请日：2018-10-05

申请人： Artilux Corporation ,  Artilux Inc.

发明人： Yun-Chung Na ,  Che-Fu Liang

IPC分类号： G01S7/486 ,  H01L29/161 ,  H01L27/146 ,  H01L31/103 ,  G01S17/89 ,  G01S17/10

摘要： An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.

公开(公告)号：US10254389B2

公开(公告)日：2019-04-09

申请号：US15338660

申请日：2016-10-31

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Che-Fu Liang

IPC分类号： G01C3/08 ,  G01S7/486 ,  G01S17/10 ,  H01L27/146 ,  H01L29/161 ,  H01L31/103 ,  G01S17/89

摘要： An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.

公开(公告)号：US20180061883A1

公开(公告)日：2018-03-01

申请号：US15803591

申请日：2017-11-03

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC分类号： H01L27/146 ,  H01L31/105 ,  H01L31/103 ,  H01L27/144 ,  H01L31/028 ,  H01L31/0352

CPC分类号： H01L27/14647 ,  H01L27/1443 ,  H01L27/14652 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1013 ,  H01L31/103 ,  H01L31/105

摘要： An optical sensor including a semiconductor substrate; a first light absorption region formed in the semiconductor substrate, the first light absorption region configured to absorb photons at a first wavelength range and to generate photo-carriers from the absorbed photons; a second light absorption region formed on the first light absorption region, the second light absorption region configured to absorb photons at a second wavelength range and to generate photo-carriers from the absorbed photons; and a sensor control signal coupled to the second light absorption region, the sensor control signal configured to provide at least a first control level and a second control level.

公开(公告)号：US20180269239A1

公开(公告)日：2018-09-20

申请号：US15982559

申请日：2018-05-17

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L31/09 ,  H01L31/0312 ,  H01L31/0232

摘要： A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including forming a germanium-silicon layer for the second group of photodiodes on a first semiconductor donor wafer; defining a first interconnect layer on the germanium-silicon layer; defining integrated circuitry for controlling pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer; bonding the first interconnect layer with the second interconnect layer; defining the pixels of an image sensor array on a second semiconductor donor wafer; defining a third interconnect layer on the image sensor array; and bonding the third interconnect layer with the germanium-silicon layer.

公开(公告)号：US20180233521A1

公开(公告)日：2018-08-16

申请号：US15952053

申请日：2018-04-12

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang ,  Yuan-Fu Lyu ,  Chien-Lung Chen ,  Chung-Chih Lin ,  Kuan-Chen Chu

IPC分类号： H01L27/146 ,  G02B1/11 ,  H04N5/359 ,  H04N5/378 ,  G01J1/44 ,  G01J1/04 ,  G01S17/36

CPC分类号： H01L27/1461 ,  G01J1/0411 ,  G01J1/44 ,  G01J3/0208 ,  G01J3/0259 ,  G01J2001/446 ,  G01J2003/2806 ,  G01S7/4914 ,  G01S7/4915 ,  G01S17/023 ,  G01S17/36 ,  G01S17/89 ,  G02B1/11 ,  G02B3/0006 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/1469 ,  H01L31/02162 ,  H01L31/02325 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/0336 ,  H01L31/1055 ,  H01L31/113 ,  H04N5/359 ,  H04N5/378 ,  H04N9/04553

摘要： An optical apparatus that includes: a semiconductor substrate formed from a first material, the semiconductor substrate including a first n-doped region; and a photodiode supported by the semiconductor substrate, the photodiode including an absorption region configured to absorb photons and to generate photo-carriers from the absorbed photons, the absorption region being formed from a second material different than the first material and including: a first p-doped region; and a second n-doped region coupled to the first n-doped region, wherein a second doping concentration of the second n-doped region is less than or substantially equal to a first doping concentration of the first n-doped region.

公开(公告)号：US09954016B2

公开(公告)日：2018-04-24

申请号：US15228282

申请日：2016-08-04

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC分类号： H01L27/146 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/18 ,  H01L31/0232

CPC分类号： H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/1465 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14698 ,  H01L31/02327 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/1812 ,  H01L31/1876 ,  H01L31/1892

摘要： An image sensor array including a carrier substrate; a first group of photodiodes coupled to the carrier substrate, where the first group of photodiodes include a first photodiode, and where the first photodiode includes a semiconductor layer configured to absorb photons at visible wavelengths and to generate photo-carriers from the absorbed photons; and a second group of photodiodes coupled to the carrier substrate, where the second group of photodiodes include a second photodiode, and where the second photodiode includes a germanium-silicon region fabricated on the semiconductor layer, the germanium-silicon region configured to absorb photons at infrared or near-infrared wavelengths and to generate photo-carriers from the absorbed photons.