公开(公告)号：US10715666B2

公开(公告)日：2020-07-14

申请号：US15746936

申请日：2016-05-16

申请人： Atsuhiro Fujii ,  Takeshi Fujita ,  Yoshinaga Kato ,  Kiyoshi Kasatani

发明人： Atsuhiro Fujii ,  Takeshi Fujita ,  Yoshinaga Kato ,  Kiyoshi Kasatani

IPC分类号： H04M3/51 ,  H04M3/56 ,  H04W4/08 ,  H04M3/42 ,  H04W28/02

摘要： While using a communication system in which groups of destinations on a network are managed, and any one of the groups can be specified as a destination, if a group needs to be changed, added, or deleted, updating the system on the network is required, which increases load of maintenance. To address such a problem, an operation input receiving unit of a terminal receives selection of a group including destination information that represents destination candidates of communication. A destination management unit of the terminal determines a destination among the destination candidates represented by the destination information included in the selected group. A sending and receiving unit of the terminal makes a request for starting communication with the determined destination, to a management system.

公开(公告)号：US6140656A

公开(公告)日：2000-10-31

申请号：US554015

申请日：1995-11-06

申请人： Atsuhiro Fujii

发明人： Atsuhiro Fujii

IPC分类号： H01J37/317 ,  H01J27/24 ,  H01J37/08 ,  H01L21/265

CPC分类号： H01J37/08 ,  H01J27/24 ,  H01J2237/0815 ,  H01J2237/31705

摘要： An ion generator vessel can be filled up with raw material gas containing a specific gas component. The ion generator vessel can be irradiated with a laser beam from a laser oscillator. Due to the beam which is applied into the ion generator vessel, only the specific gas component is selectively excited by multi-photon absorption, to generate ions. Thus, a semiconductor substrate can be inhibited from damage in ion implantation, and processability such as the throughput etc. can be improved.

摘要翻译： 离子发生器容器可以填充含有特定气体组分的原料气体。 可以用来自激光振荡器的激光束照射离子发生器容器。 由于施加到离子发生器容器中的光束，仅通过多光子吸收选择性地激发特定气体成分以产生离子。 因此，可以抑制半导体衬底在离子注入中的损伤，并且可以提高诸如生产量等的加工性能。

公开(公告)号：US5250468A

公开(公告)日：1993-10-05

申请号：US857141

申请日：1992-03-25

申请人： Masazumi Matsuura ,  Hideo Kotani ,  Atsuhiro Fujii ,  Shigeo Nagao ,  Hideki Genjo

发明人： Masazumi Matsuura ,  Hideo Kotani ,  Atsuhiro Fujii ,  Shigeo Nagao ,  Hideki Genjo

IPC分类号： H01L21/02 ,  H01L21/316 ,  H01L21/768 ,  H01L21/441

CPC分类号： H01L28/40 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834

摘要： The method of forming an interlayer insulating film insulating first and second layers of conductor patterns in a semiconductor device includes the steps of preparing a reaction gas including at least ozone and silicon alkoxide, wherein the ratio of ozone with respect to silicon alkoxide is adjusted to be not less than 5 within the reaction gas, and forming an insulating film by CVD reacting the reaction gas at atmospheric pressure at the temperature of 350.degree. C.- 450.degree. C., whereupon the interlayer insulating film includes at least the insulating film formed by atmospheric pressure CVD reaction.

摘要翻译： 在半导体器件中形成绝缘第一和第二导体图案层的层间绝缘膜的方法包括以下步骤：制备至少包括臭氧和硅氧烷的反应气体，其中臭氧与烷氧基硅的比例调节为 在反应气体内不少于5个，并通过在350℃-450℃的温度下在大气压下使反应气体进行CVD反应形成绝缘膜，由此层间绝缘膜至少包括由 大气压CVD反应。

公开(公告)号：US20180077206A1

公开(公告)日：2018-03-15

申请号：US15705924

申请日：2017-09-15

申请人： Takeru INOUE ,  Takeshi Koyama ,  Atsuhiro Fujii

发明人： Takeru INOUE ,  Takeshi Koyama ,  Atsuhiro Fujii

IPC分类号： H04L29/06 ,  H04N7/15 ,  H04N7/14

摘要： An information processing terminal includes: circuitry to receive from a management system via a network, a candidate identifier of each one of one or more candidate counterpart information processing terminals that are previously registered for the information processing terminal; and to determine, in response to acceptance of an identifier that has been input, whether the accepted identifier matches any one of the candidate identifiers being received. Based on a determination indicating that the accepted identifier matches any one of the candidate identifiers, the circuitry transmits to the management system first request information requesting to start communication with the candidate counterpart information processing terminal identified with the accepted identifier. Based on a determination indicating that the accepted identifier does not match any one of the candidate identifiers, transmit to the management system second request information requesting to start communication with a counterpart information processing terminal identified with the accepted identifier, the circuitry transmits the second request information including destination information that differs from destination information included in the first request information.

公开(公告)号：US5882418A

公开(公告)日：1999-03-16

申请号：US905396

申请日：1997-08-04

申请人： Atsuhiro Fujii ,  Kazuo Kobayashi ,  Yasuhiko Horie ,  Hiroshi Ohnishi ,  Seiichi Mimura

发明人： Atsuhiro Fujii ,  Kazuo Kobayashi ,  Yasuhiko Horie ,  Hiroshi Ohnishi ,  Seiichi Mimura

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/458 ,  C23C16/00

CPC分类号： C23C16/4404 ,  C23C16/4581

摘要： It is an object to improve the corrosion resistance of a CVD jig made of quartz to prevent exfoliation of a film attached on the surface to prevent dust. The surface of a quartz CVD jig is burned with an arc plasma torch 14 so that the OH concentration in the quartz surface remains under 30 ppm.

摘要翻译： 本发明的目的是提高由石英制成的CVD夹具的耐腐蚀性，以防止附着在表面上的膜的剥离以防止灰尘。 石英CVD夹具的表面用电弧等离子体焰炬14燃烧，使得石英表面中的OH浓度保持在30ppm以下。

公开(公告)号：US5262356A

公开(公告)日：1993-11-16

申请号：US674978

申请日：1991-03-26

申请人： Atsuhiro Fujii

发明人： Atsuhiro Fujii

IPC分类号： H01L21/205 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/52 ,  H01L21/31 ,  H01L21/316 ,  G01L21/00 ,  G01L21/02 ,  G01L21/302 ,  G01L21/463

CPC分类号： C23C16/45512 ,  C23C16/401 ,  C23C16/4482 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/31604

摘要： A method of treating a substrate with substantially equal flow rates of treatment gases in a treatment chamber containing the substrate. Because the times during which the treatment gases pass through pipes are controlled, even when the flow rates of the treatment gases differ appreciably, the impurity concentration in a film near the interface between the substrate and the film reaches a desired concentration. Also, when the times during which the treatment gases pass through the pipes are short, the treatment gases are unlikely to adhere to the walls of the pipes. It is thus possible to reduce the frequency of dummy runs.

摘要翻译： 一种在含有基材的处理室中以基本上相等的处理气体流量处理基材的方法。 由于处理气体通过管道的时间受到控制，即使处理气体的流量明显不同，基板和膜之间的界面附近的膜中的杂质浓度达到期望的浓度。 此外，当处理气体通过管道的时间短时，处理气体不可能附着在管壁上。 因此可以降低虚拟运行的频率。

公开(公告)号：US5077238A

公开(公告)日：1991-12-31

申请号：US353892

申请日：1989-05-18

申请人： Atsuhiro Fujii ,  Toshihiko Minami ,  Hideki Genjo

发明人： Atsuhiro Fujii ,  Toshihiko Minami ,  Hideki Genjo

IPC分类号： H01L21/3105 ,  H01L21/311 ,  H01L21/312 ,  H01L21/768

CPC分类号： H01L21/31111 ,  H01L21/31055 ,  H01L21/312 ,  H01L21/76819 ,  H01L21/76804 ,  Y10S148/133 ,  Y10S438/98

摘要： A method of manufacturing a semiconductor device in which an element is flattened by improving a technique of forming an interlayer insulating film. A thick insulating film having a film thickness necessary for a convexo-concave pattern to be flattened is deposited on a semiconductor substrate comprising the convexo-concave pattern of an element, a wiring and the like. Then, the thick insulating film is etched until it becomes a predetermined film thickness to form an interlayer insulating film having a predetermined film thickness from said thick insulating film. At this time, since acid and water are attached on the surface of the interlayer insulating film, a new film is formed on the surface of the interlayer insulating film to cover this water and acid. Then, a resist pattern having a desired configuration is formed on this new film. A contact hole is formed on the interlayer insulating film using this resist pattern. Thereafter, a wiring pattern electrically connected to the element is formed on the interlayer insulating film through the contact hole. According to this method, since the acid and water attached on the interlayer insulating film are covered with the new film, the adhesion between the interlayer insulating film and the resist is improved. As a result, the contact hole can be opened reliably, whereby the element is surely connected to the wiring pattern and a semiconductor device can be provided with high reliability.

摘要翻译： 通过改进形成层间绝缘膜的技术来制造半导体器件的方法，其中元件被平坦化。 在包含元件的凸凹图形，布线等的半导体衬底上沉积具有要平坦化的凹凸图案所需的膜厚度的厚绝缘膜。 然后，对厚的绝缘膜进行蚀刻，直至其变为预定的膜厚度，以从所述厚绝缘膜形成具有预定膜厚度的层间绝缘膜。 此时，由于酸和水附着在层间绝缘膜的表面上，所以在层间绝缘膜的表面上形成新的膜以覆盖该水和酸。 然后，在该新膜上形成具有所需结构的抗蚀剂图案。 使用该抗蚀剂图案在层间绝缘膜上形成接触孔。 此后，通过接触孔在层间绝缘膜上形成与元件电连接的布线图案。 根据该方法，由于附着在层间绝缘膜上的酸和水被新的膜覆盖，所以层间绝缘膜和抗蚀剂之间的粘合性提高。 结果，可以可靠地打开接触孔，从而元件可靠地连接到布线图案，并且可以提供高可靠性的半导体器件。

公开(公告)号：US10581936B2

公开(公告)日：2020-03-03

申请号：US15705924

申请日：2017-09-15

申请人： Takeru Inoue ,  Takeshi Koyama ,  Atsuhiro Fujii

发明人： Takeru Inoue ,  Takeshi Koyama ,  Atsuhiro Fujii

IPC分类号： H04L29/06 ,  H04N7/14 ,  H04N7/15 ,  H04L12/28

摘要： An information processing terminal includes: circuitry to receive from a management system via a network, a candidate identifier of each one of one or more candidate counterpart information processing terminals that are previously registered for the information processing terminal; and to determine, in response to acceptance of an identifier that has been input, whether the accepted identifier matches any one of the candidate identifiers being received. Based on a determination indicating that the accepted identifier matches any one of the candidate identifiers, the circuitry transmits to the management system first request information requesting to start communication with the candidate counterpart information processing terminal identified with the accepted identifier. Based on a determination indicating that the accepted identifier does not match any one of the candidate identifiers, transmit to the management system second request information requesting to start communication with a counterpart information processing terminal identified with the accepted identifier, the circuitry transmits the second request information including destination information that differs from destination information included in the first request information.

公开(公告)号：US07377736B1

公开(公告)日：2008-05-27

申请号：US09561634

申请日：2000-05-02

申请人： Atsuhiro Fujii ,  Norio Kajita ,  Mitsuyasu Okabe ,  Shoji Komatsu

发明人： Atsuhiro Fujii ,  Norio Kajita ,  Mitsuyasu Okabe ,  Shoji Komatsu

IPC分类号： H01L21/677

CPC分类号： F15B15/261 ,  H01L21/67772 ,  Y10S414/135

摘要： A cylinder which can precisely feed a piston rod 3 into three different positions. The cylinder includes a spring receiving member 14 which is placed coaxially with the piston rod in a piston room. Movement of the piston 4 is limited by one end of the piston room and a stopper 8 formed on the piston rod which prevents the piston from moving in the opposite direction. A first spring member 15 is disposed in the cylinder tube 2 to separate the spring receiving member from the piston. A hollow 9 is formed on the periphery of the piston rod at a further position from the piston than the stopper and a stop pin 11 in the cylinder tube 2 which is biased in the direction of the hollow by a second spring member 12 engages with the hollow. A load port utilizes the cylinder for a production system.

摘要翻译： 可将活塞杆3精确地供给到三个不同位置的气缸。 气缸包括弹簧接收构件14，弹簧接收构件14与活塞杆同轴地放置在活塞室中。 活塞4的移动被活塞室的一端限制，并且形成在活塞杆上的止动件8阻止活塞沿相反方向移动。 第一弹簧构件15设置在气缸管2中以将弹簧接收构件与活塞分离。 在活塞杆的外周上形成有比止动件更远的活塞杆的周边上的中空部9，并且通过第二弹簧部件12向中空部的方向偏置的气缸筒2内的停止销11与 空心 负载端口将气缸用于生产系统。

公开(公告)号：US06760115B2

公开(公告)日：2004-07-06

申请号：US09863512

申请日：2001-05-24

申请人： Fusao Shimizu ,  Atsuhiro Fujii

发明人： Fusao Shimizu ,  Atsuhiro Fujii

IPC分类号： G01N2188

CPC分类号： G01B11/005 ,  G01B11/24

摘要： A carrier shape measurement device includes: a stage which supports a carrier which is to be a subject of measurement; and a measurement section which measures a shape of the carrier, and the stage comprises kinematic coupling pins to support the carrier by a kinematic coupling.

摘要翻译： 载体形状测量装置包括：支撑作为测量对象的载体的载物台; 以及测量载体的形状的测量部分，并且该载物台包括通过运动耦合支撑载体的运动学连接销。