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公开(公告)号:US08987587B2
公开(公告)日:2015-03-24
申请号:US13615128
申请日:2012-09-13
申请人: Long Cheng , Akhlesh Gupta , Anke Abken , Benyamin Buller
发明人: Long Cheng , Akhlesh Gupta , Anke Abken , Benyamin Buller
IPC分类号: H01L31/00 , H01L21/00 , H01L31/0296 , H01L31/18 , H01L31/0224 , H01L31/073
CPC分类号: H01L31/0296 , H01L31/022425 , H01L31/022466 , H01L31/073 , H01L31/18 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要: A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.
摘要翻译: 光电器件可以包括与半导体吸收层相邻的本征金属层; 以及与本征金属层相邻的掺杂金属接触层,其中掺杂金属接触层包括金属基材和掺杂剂。
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公开(公告)号:US20100326491A1
公开(公告)日:2010-12-30
申请号:US12793456
申请日:2010-06-03
申请人: Long Cheng , Akhlesh Gupta , Anke Abken , Benyamin Buller
发明人: Long Cheng , Akhlesh Gupta , Anke Abken , Benyamin Buller
IPC分类号: H01L31/042 , H01L31/04 , H01L31/18
CPC分类号: H01L31/022425 , H01L31/022466 , H01L31/0236 , H01L31/0296 , H01L31/03682 , H01L31/03685 , H01L31/03762 , H01L31/03921 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/545 , Y02E10/546 , Y02E10/548
摘要: A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant.
摘要翻译: 光伏器件可以包括与半导体吸收层相邻的掺杂接触层,其中掺杂接触层包括金属基底材料和掺杂剂。
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公开(公告)号:US20100307568A1
公开(公告)日:2010-12-09
申请号:US12793469
申请日:2010-06-03
申请人: Long Cheng , Akhlesh Gupta , Anke Abken , Benyamin Buller
发明人: Long Cheng , Akhlesh Gupta , Anke Abken , Benyamin Buller
IPC分类号: H01L31/0203 , H01L31/0256 , H01L31/18
CPC分类号: H01L31/0296 , H01L31/022425 , H01L31/022466 , H01L31/073 , H01L31/18 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要: A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.
摘要翻译: 光电器件可以包括与半导体吸收层相邻的本征金属层; 以及与本征金属层相邻的掺杂金属接触层,其中掺杂金属接触层包括金属基材和掺杂剂。
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公开(公告)号:US08766088B2
公开(公告)日:2014-07-01
申请号:US12793456
申请日:2010-06-03
申请人: Long Cheng , Akhlesh Gupta , Anke Abken , Benyamin Buller
发明人: Long Cheng , Akhlesh Gupta , Anke Abken , Benyamin Buller
IPC分类号: H01L31/0224 , H01L31/0296
CPC分类号: H01L31/022425 , H01L31/022466 , H01L31/0236 , H01L31/0296 , H01L31/03682 , H01L31/03685 , H01L31/03762 , H01L31/03921 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/545 , Y02E10/546 , Y02E10/548
摘要: A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant.
摘要翻译: 光伏器件可以包括与半导体吸收层相邻的掺杂接触层,其中掺杂接触层包括金属基底材料和掺杂剂。
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公开(公告)号:US20100307561A1
公开(公告)日:2010-12-09
申请号:US12793461
申请日:2010-06-03
申请人: Benyamin Buller , Long Cheng , Akhlesh Gupta , Anke Abken
发明人: Benyamin Buller , Long Cheng , Akhlesh Gupta , Anke Abken
IPC分类号: H01L31/042 , H01L31/0256 , H01L31/0288 , H01L31/18
CPC分类号: H01L31/0392 , H01L31/03923 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要: A photovoltaic device can include a second metal layer adjacent to a first layer, where the first layer is positioned adjacent to a substrate, and where the second metal layer includes a dopant; and a copper-indium-gallium diselenide (CIGS) layer adjacent to the second metal layer.
摘要翻译: 光伏器件可以包括与第一层相邻的第二金属层,其中第一层邻近衬底定位,并且其中第二金属层包括掺杂剂; 和与第二金属层相邻的铜铟镓二硒化物(CIGS)层。
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公开(公告)号:US20130005075A1
公开(公告)日:2013-01-03
申请号:US13615128
申请日:2012-09-13
申请人: Long Chen , Akhlesh Gupta , Anke Abken , Benyamin Buller
发明人: Long Chen , Akhlesh Gupta , Anke Abken , Benyamin Buller
IPC分类号: H01L31/18
CPC分类号: H01L31/0296 , H01L31/022425 , H01L31/022466 , H01L31/073 , H01L31/18 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要: A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.
摘要翻译: 光电器件可以包括与半导体吸收层相邻的本征金属层; 以及与本征金属层相邻的掺杂金属接触层,其中掺杂金属接触层包括金属基材和掺杂剂。
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公开(公告)号:US20110030776A1
公开(公告)日:2011-02-10
申请号:US12805626
申请日:2010-08-10
申请人: Benyamin Buller , Akhlesh Gupta , Syed Zafar
发明人: Benyamin Buller , Akhlesh Gupta , Syed Zafar
IPC分类号: H01L31/0232 , H01L31/18
CPC分类号: H01L31/022425 , H01L31/073 , Y02E10/543 , Y02P70/521
摘要: A photovoltaic device back contact is disclosed. The back contact can include an indium nitride.
摘要翻译: 公开了一种光电器件背面接触。 背面接触可以包括氮化铟。
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公开(公告)号:US20110277812A1
公开(公告)日:2011-11-17
申请号:US13107222
申请日:2011-05-13
申请人: Benyamin Buller , Akhlesh Gupta
发明人: Benyamin Buller , Akhlesh Gupta
IPC分类号: H01L31/05 , C23C14/06 , C23C14/14 , H01L31/18 , B05D3/00 , C23C4/06 , B22F7/06 , B22F3/03 , H01L31/02 , C23C14/08
CPC分类号: H01L31/02963 , B22F3/03 , B22F3/15 , B22F7/08 , C23C14/08 , C23C14/086 , C23C14/3407 , C23C14/3414 , C23C26/00 , C23C28/04 , H01L31/022466 , H01L31/0232 , H01L31/0296 , H01L31/03925 , H01L31/073 , H01L31/1828 , H01L31/1864 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要: A multilayered structure may include a doped buffer layer on a transparent conductive oxide layer.
摘要翻译: 多层结构可以包括在透明导电氧化物层上的掺杂缓冲层。
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公开(公告)号:US09246330B2
公开(公告)日:2016-01-26
申请号:US13457155
申请日:2012-04-26
申请人: Benyamin Buller , Dmitriy Marinskiy
发明人: Benyamin Buller , Dmitriy Marinskiy
CPC分类号: H02J1/06 , Y10T307/50
摘要: A method and system for operating a photovoltaic module includes providing a reversed electrical bias to the photovoltaic module.
摘要翻译: 用于操作光伏模块的方法和系统包括向光伏模块提供反向的电偏压。
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公开(公告)号:US20120118348A1
公开(公告)日:2012-05-17
申请号:US12946935
申请日:2010-11-16
申请人: Benyamin Buller
发明人: Benyamin Buller
IPC分类号: H01L31/042 , H02H9/04
CPC分类号: H02H7/20 , H01L31/02021 , Y02E10/50
摘要: An apparatus and method for reducing the voltage in a photovoltaic system to allow servicing of solar modules. The apparatus includes a switch that electrically shorts conductors of the system, thereby reducing high voltage conditions at the modules. The apparatus and method can also include use of a detector that measures voltage and/or current in the system to control switch operations.
摘要翻译: 一种用于降低光伏系统中的电压以允许维修太阳能模块的装置和方法。 该装置包括一个使系统的导线电短路的开关,从而降低模块的高电压条件。 该装置和方法还可以包括使用测量系统中的电压和/或电流以控制开关操作的检测器。
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