摘要:
A photopolymerization photoresist composition having a binder resin, a multifunctional compound, a photopolymerization initiator, a sensitizer and other additives. The photopolymerization initiator has one or more 4,6-bis(chloromethyl)-s-triazine compound containing a diazophenyl group. The initiator acts as a chromophore and is represented by the following general formula I: ##STR1## wherein the position at which the diazo group bonds to phenyl group may be changed. R is an aliphatic radical or an unsubstituted- or substituted aromatic radical and n is an integer of 0 to 2.
摘要:
The present invention disclosed an organic thin film transistor, an organic thin film transistor array substrate and an organic thin film transistor display. The present invention disclosed organic materials which is proper for the application to a large screen display. The presentation also disclosed structures and a method for manufacturing such an organic thin film transistor, the organic thin film transistor array substrate and the organic thin film transistor display.
摘要:
A method for manufacturing a semiconductor device including forming a first wire on a substrate, forming a lower film on the first wire, forming a photosensitive pattern on the lower film using a photosensitive material, forming contact holes for exposing the first wire by etching the lower film using the photosensitive film as an etching mask, removing part of the photosensitive film pattern by an ashing process to expose a borderline of the lower film defining the contact holes and forming second wire connected to the first wire via the contact holes.
摘要:
Provided is a method of controlling a portable terminal having a projector module using a headset, which includes: receiving a command signal from the headset; determining whether the projector module is in an execution or driving state; recognizing the command signal as a signal for controlling the projector module, in case the projector module is in the driving state; and controlling the projector module according to the recognized signal.
摘要:
Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1. MAn (Formula 1) Herein, M is a metal ion, A is an organic ligand which includes α-substituted carboxylate, and n is a natural number.
摘要:
A method of controlling a screen of a mobile terminal having a projector function and an apparatus permits outputs of common screen data and dual-processed data output by a display screen and an external screen. A method of outputting screen data in a mobile terminal having a projector function includes: activating a projector module; generating screen data for a display unit displayed on a display unit and screen data for a projector based on the projector module; and performing dual-processing of the generated screen data and outputting the dual-processed screen data to the display unit and the projector module.
摘要:
An organic thin film transistor (TFT) substrate with a simplified fabrication process is disclosed. The TFT substrate includes a gate line and a data line and an organic TFT connected to the gate line and the data line. The gate line and the data line define a pixel region where a pixel electrode is formed. A first contact portion connects the data line to the organic TFT, and a second contact portion connects the pixel electrode to the organic TFT. A passivation layer covers the organic TFT. The organic TFT substrate also includes a bank insulating layer with a first contact hole for connecting the first contact portion to the organic TFT, a second contact hole for connecting the second contact portion to the organic TFT, a first sub bank defining a location of the gate insulating layer, and a second sub bank defining a location of the passivation layer.
摘要:
An optimized Mobile Industry Processor Interface (MIPI) includes a transmitter physical (PHY) layer configured to convert input data into serial data and transmit the serial data in synchronization with a high-speed clock, a receiver PHY layer configured to convert the serial data into 8-bit parallel data in synchronization with the clock received from the transmitter, a bit merge block configured to merge the parallel data received from the receiver PHY layer so as to form 32-bit data using multiple lanes and to transmit the 32-bit data to a receiver protocol layer, the receiver protocol layer being configured to decode and recognize the data received from the bit merge block.
摘要:
The present invention provides a writing/reading control method of HD stream in a DVD recorder, by which HD broadcast signals are write in a DVD medium. The present invention includes the steps of storing a plurality of HD streams in the HDD by demodulating HD broadcast signals received from a tuner/demodulator, creating a stream file in a DVD medium to record a specific one of a plurality of the HD streams stored in the HDD, recording the specific HD stream in the stream file, opening to read the HD steam file recorded in the DVD medium, buffering the read HD stream file in the HDD, and reading the buffered HD stream file using a video decoder.
摘要:
A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon.