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10 条记录 (耗时 0.025 秒)

    Processes for removing residue from a workpiece
    1.
    发明申请
    Processes for removing residue from a workpiece 审中-公开
    从工件上清除残留物的工艺

    公开(公告)号：US20050233589A1

    公开(公告)日：2005-10-20

    申请号：US11151896

    申请日：2005-06-14

    申请人： Brian Aegerter ,  Curt Dundas ,  Tom Ritzdorf ,  Gary Curtis ,  Michael Jolley

    发明人： Brian Aegerter ,  Curt Dundas ,  Tom Ritzdorf ,  Gary Curtis ,  Michael Jolley

    IPC分类号： B08B3/00 ,  B44C1/22 ,  H01L21/00 ,  H01L21/302 ,  H01L21/311 ,  H01L21/3213

    CPC分类号： H01L21/31111 ,  H01L21/32134 ,  H01L21/67051 ,  H01L21/6708

    摘要： In a process for removing etch residue, liquid including an acid and an oxidizer is applied to the back side and peripheral edge of a wafer. The front or device side of the wafer is left unprocessed, or may be exposed to an inert fluid such as a purge gas (e.g., nitrogen or helium), to a rinse such as deionized water, or to another processing fluid such as a more highly diluted etchant. The front side of the wafer is either left unprocessed, or is processed to a lesser degree without damage to the underlying devices, metal interconnects or semiconductor layers.

    摘要翻译： 在去除蚀刻残留物的方法中，将包含酸和氧化剂的液体施加到晶片的背面和周缘。 晶片的前部或装置侧未被处理，或者可以暴露于诸如清除气体（例如氮气或氦气）的惰性流体到漂洗液如去离子水，或者暴露于另一种处理流体，例如更多 高度稀释的蚀刻剂。 晶片的前侧要么是未加工的，要么被加工程度较小，而不会损坏底层器件，金属互连或半导体层。

    Methods and apparatus for rinsing and drying
    2.
    发明申请
    Methods and apparatus for rinsing and drying 有权
    冲洗和干燥的方法和设备

    公开(公告)号：US20060070638A1

    公开(公告)日：2006-04-06

    申请号：US11292823

    申请日：2005-12-02

    申请人： Brian Aegerter ,  Curt Dundas ,  Tom Ritzdorf ,  Gary Curtis ,  Michael Jolley

    发明人： Brian Aegerter ,  Curt Dundas ,  Tom Ritzdorf ,  Gary Curtis ,  Michael Jolley

    IPC分类号： B08B3/00 ,  B08B7/00

    CPC分类号： H01L21/67051 ,  B08B3/02 ,  H01L21/67028

    摘要： A method for rinsing and drying a workpiece includes placing the workpiece into a chamber and spinning the workpiece. A rinsing fluid, such as water, is applied onto the workpiece through a first outlet in the chamber, with the rinsing fluid moving outwardly towards the edge of the workpiece via centrifugal force, to rinse the workpiece. A drying fluid, such as an alcohol vapor, is applied onto the workpiece through the first outlet, with the drying fluid moving outwardly towards the edge of the workpiece via centrifugal force, to dry the workpiece. The drying fluid advantageously follows a meniscus of the rinsing fluid across the workpiece surface. The rinsing fluid, or the drying fluid, or both fluids, may be applied near or at a central area of the workpiece.

    摘要翻译： 用于冲洗和干燥工件的方法包括将工件放置在室中并旋转工件。 冲洗流体例如水通过腔室中的第一出口施加到工件上，漂洗流体通过离心力向外移动到工件的边缘，以冲洗工件。 干燥流体，例如醇蒸汽，通过第一出口施加到工件上，干燥流体通过离心力向外移动到工件的边缘，以干燥工件。 干燥流体有利地沿着穿过工件表面的冲洗流体的弯液面。 冲洗流体或干燥流体或两种流体可以施加在工件的中心区域附近或其附近。

    Method for applying metal features onto barrier layers using ion permeable barriers
    7.
    发明申请
    Method for applying metal features onto barrier layers using ion permeable barriers 审中-公开
    使用离子渗透屏障将金属特征施加到阻挡层上的方法

    公开(公告)号：US20060189129A1

    公开(公告)日：2006-08-24

    申请号：US11413228

    申请日：2006-04-28

    申请人： Rajesh Baskaran ,  Bioh Kim ,  Robert Batz ,  Tom Ritzdorf ,  John Klocke ,  Kyle Hanson

    发明人： Rajesh Baskaran ,  Bioh Kim ,  Robert Batz ,  Tom Ritzdorf ,  John Klocke ,  Kyle Hanson

    IPC分类号： C25D5/34 ,  H01L21/44

    CPC分类号： C25D3/02 ,  C25D5/38 ,  C25D5/54 ,  C25D7/123 ,  C25D17/00 ,  C25D17/001 ,  C25D17/002 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76885

    摘要： The methods described are directed to processes for producing structures containing metallized features for use in microelectronic workpieces. The processes treat a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The processes described modify an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process. According to the processes described metallized features are formed on the treated barrier layers using processes that employ ion permeable barriers.

    摘要翻译： 所描述的方法涉及用于生产用于微电子工件的包含金属化特征的结构的方法。 该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。 用于促进阻挡层和金属化特征之间的粘合的合适方式包括阻挡层的酸处理，阻挡层的电解处理，或阻挡层和金属化特征之间的结合层的沉积。 所描述的方法改变了阻挡层的外表面，使得其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。 根据所述方法，使用采用离子可渗透屏障的方法在经处理的阻挡层上形成金属化特征。

    Copper electrolytic process using cation permeable barrier
    8.
    发明申请
    Copper electrolytic process using cation permeable barrier 审中-公开
    铜电解工艺采用阳离子渗透屏障

    公开(公告)号：US20060260946A1

    公开(公告)日：2006-11-23

    申请号：US11414535

    申请日：2006-04-28

    申请人： Rajesh Baskaran ,  Robert Batz ,  Bioh Kim ,  Tom Ritzdorf ,  John Klocke ,  Kyle Hanson

    发明人： Rajesh Baskaran ,  Robert Batz ,  Bioh Kim ,  Tom Ritzdorf ,  John Klocke ,  Kyle Hanson

    IPC分类号： C25D5/02

    CPC分类号： C25F3/02 ,  C25D3/02 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25F7/00 ,  H01L21/2885

    摘要： Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and a cation permeable barrier layer. The cation permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain cationic species to transfer between the two fluids. The described processes produce deposits over repeated plating cycles that exhibit deposit properties (e.g., resistivity) within desired ranges.

    摘要翻译： 描述了利用第一处理流体和阳极电解处理微特征工件的工艺和系统。 使用第一处理流体，阳极，第二处理流体和阳离子可渗透阻挡层对微特征工件进行电解处理。 阳离子可渗透阻隔层将第一处理流体与第二处理流体分离，同时允许某些阳离子物质在两种流体之间转移。 所描述的方法在反复电镀循环中产生沉积物，其在所需范围内具有沉积性质（例如电阻率）。