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    Method for applying metal features onto barrier layers using ion permeable barriers
    2.
    发明申请
    Method for applying metal features onto barrier layers using ion permeable barriers 审中-公开
    使用离子渗透屏障将金属特征施加到阻挡层上的方法

    公开(公告)号：US20060189129A1

    公开(公告)日：2006-08-24

    申请号：US11413228

    申请日：2006-04-28

    申请人： Rajesh Baskaran ,  Bioh Kim ,  Robert Batz ,  Tom Ritzdorf ,  John Klocke ,  Kyle Hanson

    发明人： Rajesh Baskaran ,  Bioh Kim ,  Robert Batz ,  Tom Ritzdorf ,  John Klocke ,  Kyle Hanson

    IPC分类号： C25D5/34 ,  H01L21/44

    CPC分类号： C25D3/02 ,  C25D5/38 ,  C25D5/54 ,  C25D7/123 ,  C25D17/00 ,  C25D17/001 ,  C25D17/002 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76885

    摘要： The methods described are directed to processes for producing structures containing metallized features for use in microelectronic workpieces. The processes treat a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The processes described modify an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process. According to the processes described metallized features are formed on the treated barrier layers using processes that employ ion permeable barriers.

    摘要翻译： 所描述的方法涉及用于生产用于微电子工件的包含金属化特征的结构的方法。 该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。 用于促进阻挡层和金属化特征之间的粘合的合适方式包括阻挡层的酸处理，阻挡层的电解处理，或阻挡层和金属化特征之间的结合层的沉积。 所描述的方法改变了阻挡层的外表面，使得其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。 根据所述方法，使用采用离子可渗透屏障的方法在经处理的阻挡层上形成金属化特征。

    Copper electrolytic process using cation permeable barrier
    5.
    发明申请
    Copper electrolytic process using cation permeable barrier 审中-公开
    铜电解工艺采用阳离子渗透屏障

    公开(公告)号：US20060260946A1

    公开(公告)日：2006-11-23

    申请号：US11414535

    申请日：2006-04-28

    申请人： Rajesh Baskaran ,  Robert Batz ,  Bioh Kim ,  Tom Ritzdorf ,  John Klocke ,  Kyle Hanson

    发明人： Rajesh Baskaran ,  Robert Batz ,  Bioh Kim ,  Tom Ritzdorf ,  John Klocke ,  Kyle Hanson

    IPC分类号： C25D5/02

    CPC分类号： C25F3/02 ,  C25D3/02 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25F7/00 ,  H01L21/2885

    摘要： Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and a cation permeable barrier layer. The cation permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain cationic species to transfer between the two fluids. The described processes produce deposits over repeated plating cycles that exhibit deposit properties (e.g., resistivity) within desired ranges.

    摘要翻译： 描述了利用第一处理流体和阳极电解处理微特征工件的工艺和系统。 使用第一处理流体，阳极，第二处理流体和阳离子可渗透阻挡层对微特征工件进行电解处理。 阳离子可渗透阻隔层将第一处理流体与第二处理流体分离，同时允许某些阳离子物质在两种流体之间转移。 所描述的方法在反复电镀循环中产生沉积物，其在所需范围内具有沉积性质（例如电阻率）。