公开(公告)号：US20140124940A1

公开(公告)日：2014-05-08

申请号：US13713407

申请日：2012-12-13

Applicant: BROADCOM CORPORATION

Inventor： Milind S. Bhagavat ,  Javed Iqbal Sandhu ,  Rezaur Rahman Khan ,  Teck Yang Tan

IPC: H01L23/485 ,  H01L21/768

CPC classification number: H01L23/147 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/49827 ,  H01L23/525 ,  H01L23/528 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/02335 ,  H01L2224/02375 ,  H01L2224/024 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05568 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2224/05552

Abstract: Methods, systems, and apparatuses for semiconductor devices are provided herein. A semiconductor device includes an array of conductive pads for signals. One or more non-linear compliant springs may be present to route signals from the conductive pads to interconnect pads formed on the semiconductor device to attach bump interconnects. Each non-linear compliant spring may include one or more routing segments. The semiconductor device may be mounted to a circuit board by the bump interconnects. When the semiconductor device operates, heat may be generated by the semiconductor device, causing thermal expansion by the semiconductor device and the circuit board. The semiconductor device and circuit board may expand by different amounts due to differences in their thermal coefficients of expansion. The non-linear compliant springs provide for compliance between the conductive pads and bump interconnects to allow for the different rates of expansion.

Abstract translation: 本文提供了用于半导体器件的方法，系统和装置。 半导体器件包括用于信号的导电焊盘阵列。 可以存在一个或多个非线性柔性弹簧以将信号从导电焊盘传送到在半导体器件上形成的互连焊盘以附接凸起互连。 每个非线性顺应弹簧可以包括一个或多个路线段。 半导体器件可以通过凸块互连来安装到电路板。 当半导体器件工作时，可能由半导体器件产生热量，引起半导体器件和电路板的热膨胀。 由于其热膨胀系数的差异，半导体器件和电路板可以扩展不同的量。 非线性柔性弹簧提供导电焊盘和凸块互连之间的顺应性，以允许不同的膨胀率。

公开(公告)号：US09236442B2

公开(公告)日：2016-01-12

申请号：US13725699

申请日：2012-12-21

Applicant: Broadcom Corporation

Inventor： Milind S. Bhagavat ,  Sampath Komarapalayam Velayudham Karikalan ,  Rezaur Rahman Khan

IPC: H01L29/00 ,  H01L29/66 ,  H01L27/08 ,  H01L29/94 ,  H01L21/48 ,  H01L25/16 ,  H01L21/768 ,  H01L23/14 ,  H01L23/498 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L29/66181 ,  H01L21/486 ,  H01L21/568 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/16 ,  H01L27/0805 ,  H01L29/945 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/11 ,  H01L2924/00 ,  H01L2224/05552

Abstract: Methods and apparatuses are described for integration of integrated circuit die and silicon-based trench capacitors using silicon-level connections to reduce connection lengths, parasitics and necessary capacitance magnitudes and volumes. A trench capacitor can be fabricated on silicon and mounted on or embedded in a chip or one or more sides of a through silicon interposer (TSI) for silicon-level connections to chip circuitry. Aspect ratio dependent, as opposed to trench diameter or trench depth dependent, trench capacitors formed by a dense array of high aspect ratio trenches with thin, high permittivity dielectric increase capacitance per unit area and volume, resulting in thin, high capacitance trench capacitors having thickness equal to or less than chip thickness.

Abstract translation: 描述了集成电路管芯和使用硅层连接的硅基沟槽电容器的方法和装置，以减少连接长度，寄生效应和必要的电容量值和体积。 沟槽电容器可以在硅上制造并且安装在或嵌入在芯片或芯片插入器（TSI）的一侧或多侧上，用于与芯片电路的硅层连接。 长宽比取决于与沟槽直径或沟槽深度相关的沟槽电容器，其由具有薄的高介电常数介电常数的高纵横比沟槽的密集阵列形成，增加了每单位面积和体积的电容，导致薄的高电容沟槽电容器具有厚度 等于或小于芯片厚度。

公开(公告)号：US09287189B2

公开(公告)日：2016-03-15

申请号：US13713407

申请日：2012-12-13

Applicant: Broadcom Corporation

Inventor： Milind S. Bhagavat ,  Javed Iqbal Sandhu ,  Rezaur Rahman Khan ,  Teck Yang Tan

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/14 ,  H01L23/31 ,  H01L23/498 ,  H01L23/525 ,  H01L23/528 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L23/147 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/49827 ,  H01L23/525 ,  H01L23/528 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/02335 ,  H01L2224/02375 ,  H01L2224/024 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05568 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2224/05552

Abstract: Methods, systems, and apparatuses for semiconductor devices are provided herein. A semiconductor device includes an array of conductive pads for signals. One or more non-linear compliant springs may be present to route signals from the conductive pads to interconnect pads formed on the semiconductor device to attach bump interconnects. Each non-linear compliant spring may include one or more routing segments. The semiconductor device may be mounted to a circuit board by the bump interconnects. When the semiconductor device operates, heat may be generated by the semiconductor device, causing thermal expansion by the semiconductor device and the circuit board. The semiconductor device and circuit board may expand by different amounts due to differences in their thermal coefficients of expansion. The non-linear compliant springs provide for compliance between the conductive pads and bump interconnects to allow for the different rates of expansion.

Abstract translation: 本文提供了用于半导体器件的方法，系统和装置。 半导体器件包括用于信号的导电焊盘阵列。 可以存在一个或多个非线性柔性弹簧以将信号从导电焊盘传送到在半导体器件上形成的互连焊盘以附接凸起互连。 每个非线性顺应弹簧可以包括一个或多个路线段。 半导体器件可以通过凸块互连件安装到电路板。 当半导体器件工作时，可能由半导体器件产生热量，引起半导体器件和电路板的热膨胀。 由于其热膨胀系数的差异，半导体器件和电路板可以扩展不同的量。 非线性柔性弹簧提供导电焊盘和凸块互连之间的顺应性，以允许不同的膨胀率。

公开(公告)号：US20140145300A1

公开(公告)日：2014-05-29

申请号：US13725699

申请日：2012-12-21

Applicant: BROADCOM CORPORATION

Inventor： Milind S. Bhagavat ,  Sampath Komarapalayam Velayudham Karikalan ,  Rezaur Rahman Khan

IPC: H01L27/04 ,  H01L21/77

CPC classification number: H01L29/66181 ,  H01L21/486 ,  H01L21/568 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/16 ,  H01L27/0805 ,  H01L29/945 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/11 ,  H01L2924/00 ,  H01L2224/05552

Abstract: Methods and apparatuses are described for integration of integrated circuit die and silicon-based trench capacitors using silicon-level connections to reduce connection lengths, parasitics and necessary capacitance magnitudes and volumes. A trench capacitor can be fabricated on silicon and mounted on or embedded in a chip or one or more sides of a through silicon interposer (TSI) for silicon-level connections to chip circuitry. Aspect ratio dependent, as opposed to trench diameter or trench depth dependent, trench capacitors formed by a dense array of high aspect ratio trenches with thin, high permittivity dielectric increase capacitance per unit area and volume, resulting in thin, high capacitance trench capacitors having thickness equal to or less than chip thickness.

Abstract translation: 描述了集成电路管芯和使用硅层连接的硅基沟槽电容器的方法和装置，以减少连接长度，寄生效应和必要的电容量值和体积。 沟槽电容器可以在硅上制造并且安装在或嵌入在芯片或芯片插入器（TSI）的一侧或多侧上，用于与芯片电路的硅层连接。 长宽比取决于与沟槽直径或沟槽深度相关的沟槽电容器，其由具有薄的高介电常数介电常数的高纵横比沟槽的密集阵列形成，增加了每单位面积和体积的电容，导致薄的高电容沟槽电容器具有厚度 等于或小于芯片厚度。

公开(公告)号：US20150318230A1

公开(公告)日：2015-11-05

申请号：US14801377

申请日：2015-07-16

Applicant: Broadcom Corporation

Inventor： Milind S. Bhagavat ,  Mehdi Saeidi ,  Tak Sang Yeung

IPC: H01L23/467 ,  H05K7/20 ,  H01L23/367

CPC classification number: H01L23/467 ,  H01L23/3675 ,  H01L2924/0002 ,  H05K7/20136 ,  H05K7/20145 ,  H05K7/20154 ,  H01L2924/00

Abstract: Methods, systems, and apparatuses are described for cooling electronic devices. The electrical device includes an integrated circuit die (IC) having opposing first and second surfaces, a plurality of interconnects on the second surface of the IC die that enable the IC die to be coupled to a substrate, and a flexural plate wave device. The flexural plate wave device is configured to generate a stream of air to flow across the electrical device to cool the IC die during operation of the IC die.

Abstract translation: 描述了用于冷却电子设备的方法，系统和装置。 电气装置包括具有相对的第一和第二表面的集成电路管芯（IC），IC模头的第二表面上的使得IC管芯能够耦接到衬底的多个互连件，以及弯曲板形波装置。 弯曲板波装置被配置为产生流过电气装置的空气流，以在IC管芯的工作期间冷却IC管芯。