摘要:
An integrated circuit (IC) package includes an IC die having a first surface and a second surface opposite of the first surface. The IC package includes first contact members coupled to the second surface of the IC die. The IC package includes a bottom substrate having a first surface and a second surface opposite of the first surface, where the first surface of the bottom substrate is coupled to the second surface of the IC die via the first contact members. The IC package includes an interposer substrate coupled to the first surface of the IC die via an adhesive material, where the adhesive material is disposed on at least a surface of the interposer substrate. The IC package includes second contact members coupled along a periphery of the interposer substrate, where the interposer substrate is coupled to the first surface of the bottom substrate via the second contact members.
摘要:
An exemplary implementation of the present disclosure includes a stacked package having a top die from a top reconstituted wafer situated over a bottom die from a bottom reconstituted wafer. The top die and the bottom die are insulated from one another by an insulation arrangement. The top die and the bottom die are also interconnected through the insulation arrangement. The insulation arrangement can include a top molding compound that flanks the top die and a bottom molding compound that flanks the bottom die. The top die and the bottom die can be interconnected through at least the top molding compound. Furthermore, the top die and the bottom die can be interconnected through a conductive via that extends within the insulation arrangement.
摘要:
Various examples are provided for interconnection structures for molded IC packages. In one example, among others, an IC package includes a substrate and an interposer. A plurality of conductive elements provide physical and electrical contact between a surface of the substrate and a surface of the interposer. A standoff element disposed between the surfaces of the substrate and interposer provides a minimum spacing between the surfaces of the substrate and interposer. In some implementations, a standoff element is disposed between an IC die disposed on the surface of the substrate and the surface of the interposer. In another example, a method includes coupling conductive elements to a surface of an interposer, attaching a standoff element, coupling the conductive elements to a surface of a substrate, and forming an embedded layer between the interposer and substrate. The standoff element defines a minimum gap between the interposer and the substrate.
摘要:
An exemplary implementation of the present disclosure includes a stacked package having a top die from a top reconstituted wafer situated over a bottom die from a bottom reconstituted wafer. The top die and the bottom die are insulated from one another by an insulation arrangement. The top die and the bottom die are also interconnected through the insulation arrangement. The insulation arrangement can include a top molding compound that flanks the top die and a bottom molding compound that flanks the bottom die. The top die and the bottom die can be interconnected through at least the top molding compound. Furthermore, the top die and the bottom die can be interconnected through a conductive via that extends within the insulation arrangement.
摘要:
The present application discloses various implementations of a semiconductor package including an organic substrate and one or more interposers having through-semiconductor vias (TSVs). Such a semiconductor package may include a contiguous organic substrate having a lower substrate segment including first and second pluralities of lower interconnect pads, the second plurality of lower interconnect pads being disposed in an opening of the lower substrate segment. The contiguous organic substrate may also include an upper substrate segment having an upper width and including first and second pluralities of upper interconnect pads. In addition, the semiconductor package may include at least one interposer having TSVs for electrically connecting the first and second pluralities of lower interconnect pads to the first and second pluralities of upper interconnect pads. The interposer has an interposer width less than the upper width of the upper substrate segment.
摘要:
An interface substrate is disclosed which includes an interposer having through-semiconductor vias. An upper and a lower organic substrate are further built around the interposer. The disclosed interface substrate enables the continued use of low cost and widely deployed organic substrates for semiconductor packages while providing several advantages. The separation of the organic substrate into upper and lower substrates enables the cost effective matching of fabrication equipment. By providing an opening in one of the organic substrates, one or more semiconductor dies may be attached to exposed interconnect pads coupled to through-semiconductor vias of the interposer, enabling the use of flip chips with high-density microbump arrays and the accommodation of dies with varied bump pitches. By providing the opening specifically in the upper organic substrate, a package-on-package structure with optimized height may also be provided.
摘要:
Systems, apparatuses, and methods provided for semiconductor devices and integrated circuit (IC) packages that include compliant dielectric layers. In a through silicon via interposer or substrate, a compliant dielectric material may be added to a surface of silicon material body to form a compliant dielectric layer. The compliant dielectric layer provides a thermal buffer and a stress buffer for a resulting IC package. The compliant dielectric material may be selected such that the coefficient of thermal expansion of the compliant dielectric material approximately matches the coefficient of thermal expansion of the circuit board on which the IC package is mounted. The compliant dielectric material may be selected such that it has a deformability that is greater than the silicon material body. Multiple sub-layers of compliant dielectric material may be used.
摘要:
Systems, apparatuses, and methods provided for semiconductor devices and integrated circuit (IC) packages that include compliant dielectric layers. In a through silicon via interposer or substrate, a compliant dielectric material may be added to a surface of silicon material body to form a compliant dielectric layer. The compliant dielectric layer provides a thermal buffer and a stress buffer for a resulting IC package. The compliant dielectric material may be selected such that the coefficient of thermal expansion of the compliant dielectric material approximately matches the coefficient of thermal expansion of the circuit board on which the IC package is mounted. The compliant dielectric material may be selected such that it has a deformability that is greater than the silicon material body. Multiple sub-layers of compliant dielectric material may be used.
摘要:
Reconstitution techniques for semiconductor packages are provided. One reconstitution technique is used to encapsulate a plurality of semiconductor packages into a single multi-chip module. Solder balls coupled to each package may be partially exposed after reconstitution, which enables the packages to be coupled to another device. Another reconstitution technique is used to couple a plurality of semiconductor packages into a package-on-package module using self-alignment feature(s). The self-alignment feature(s) are exposed solder ball(s) that are included in the bottom package of the package-on-package module. The exposed solder ball(s) serve as a frame of reference to other solder balls that are encapsulated by an encapsulation material. After the location of these other solders balls are determined, through-mold vias may be formed in the encapsulation material at locations corresponding to the other solder balls. The top package of the package-on-package module may then be coupled to the bottom package using these solder balls.
摘要:
Embodiments of provide an integrated circuit (IC) device. The IC device can include a substrate having first and second opposing surfaces, an IC die electrically coupled to the first surface of the substrate, a plurality of contact members coupled to the first surface of the substrate, and an interposer. The interposer can include a plurality of contact elements located on a first surface thereof, each conductive element being coupled to a respective one of the plurality of contact members, and an antenna formed using a conductive layer of the interposer, the antenna being electrically coupled to the IC die through at least one of the plurality of contact elements and at least one of the plurality of contact members.