Semiconductor Package with Interface Substrate Having Interposer
    6.
    发明申请
    Semiconductor Package with Interface Substrate Having Interposer 有权
    具有插入式接口基板的半导体封装

    公开(公告)号:US20140035163A1

    公开(公告)日:2014-02-06

    申请号:US14052466

    申请日:2013-10-11

    IPC分类号: H01L23/48

    摘要: An interface substrate is disclosed which includes an interposer having through-semiconductor vias. An upper and a lower organic substrate are further built around the interposer. The disclosed interface substrate enables the continued use of low cost and widely deployed organic substrates for semiconductor packages while providing several advantages. The separation of the organic substrate into upper and lower substrates enables the cost effective matching of fabrication equipment. By providing an opening in one of the organic substrates, one or more semiconductor dies may be attached to exposed interconnect pads coupled to through-semiconductor vias of the interposer, enabling the use of flip chips with high-density microbump arrays and the accommodation of dies with varied bump pitches. By providing the opening specifically in the upper organic substrate, a package-on-package structure with optimized height may also be provided.

    摘要翻译: 公开了一种界面衬底,其包括具有贯通半导体通孔的插入件。 进一步围绕插入件构建上部和下部有机衬底。 所公开的接口衬底能够持续使用低成本且广泛部署的用于半导体封装的有机衬底,同时提供若干优点。 将有机基底分离成上下基板能够实现制造设备的成本有效匹配。 通过在一个有机衬底中设置一个开口,一个或多个半导体管芯可以附着到与插入器的通孔半导体连接的暴露的互连焊盘上,使得能够使用具有高密度微型阵列的倒装芯片和模具 具有不同的凸起间距。 通过在上部有机衬底中提供开口,还可以提供具有优化的高度的封装封装结构。

    Compliant dielectric layer for semiconductor device

    公开(公告)号:US09219054B2

    公开(公告)日:2015-12-22

    申请号:US14147237

    申请日:2014-01-03

    摘要: Systems, apparatuses, and methods provided for semiconductor devices and integrated circuit (IC) packages that include compliant dielectric layers. In a through silicon via interposer or substrate, a compliant dielectric material may be added to a surface of silicon material body to form a compliant dielectric layer. The compliant dielectric layer provides a thermal buffer and a stress buffer for a resulting IC package. The compliant dielectric material may be selected such that the coefficient of thermal expansion of the compliant dielectric material approximately matches the coefficient of thermal expansion of the circuit board on which the IC package is mounted. The compliant dielectric material may be selected such that it has a deformability that is greater than the silicon material body. Multiple sub-layers of compliant dielectric material may be used.