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公开(公告)号：US20100208493A1
公开(公告)日：2010-08-19
申请号：US12687290
申请日：2010-01-14
申请人： Byoung-lyong CHOI , Hong-seok LEE , Jong-min KIM , Eun-kyung LEE
发明人： Byoung-lyong CHOI , Hong-seok LEE , Jong-min KIM , Eun-kyung LEE
CPC分类号： G02B6/0035 , G02B6/0038
摘要： A light guide plate includes a plurality of quantum dots on at least one of a surface of the light guide plate and inside the light guide plate, wherein the plurality of quantum dots emit light having a different wavelength than a light incident thereto.
摘要翻译： 导光板在导光板的表面和导光板的至少一个上包括多个量子点，其中多个量子点发射具有与入射到其上的光不同的波长的光。
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2.发明申请公开(公告)号：US20110220165A1
公开(公告)日：2011-09-15
申请号：US13044878
申请日：2011-03-10
摘要： A thermoelectric device includes: a first region; a second region; and a thermoelectric body disposed between the first region and the second region, where the thermoelectric body includes a vacancy.
摘要翻译： 热电装置包括：第一区域; 第二区域 以及设置在所述第一区域和所述第二区域之间的热电体，其中所述热电体包括空位。
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公开(公告)号：US20100213438A1
公开(公告)日：2010-08-26
申请号：US12708664
申请日：2010-02-19
申请人： Kyung-sang CHO , Byoung-lyong CHOI , Eun-kyung LEE , Tae-ho KIM , Sang-jin LEE
发明人： Kyung-sang CHO , Byoung-lyong CHOI , Eun-kyung LEE , Tae-ho KIM , Sang-jin LEE
IPC分类号： H01L33/06
CPC分类号： H01L51/502 , B82Y20/00 , B82Y30/00 , H01L33/14 , H01L51/0003 , H01L51/0007 , H01L51/5036 , H01L51/5048 , H01L51/5096
摘要： A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer.
摘要翻译： 量子点发光器件包括： 衬底，设置在衬底上的第一电极，与第一电极基本相对设置的第二电极，设置在第一电极和第二电极之间的第一电荷传输层，设置在第一电荷传输层之间的量子点发光层 和第一电极和第二电极中的一个以及设置在量子点发光层和第一电荷传输层之间的至少一个量子点包括层，其中所述至少一个量子点包含层具有与 量子点发光层的能带水平。
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公开(公告)号：US20110244662A1
公开(公告)日：2011-10-06
申请号：US12976874
申请日：2010-12-22
申请人： Eun-kyung LEE , Byoung-lyong CHOI , Dong-mok WHANG , Jae-hyun LEE
发明人： Eun-kyung LEE , Byoung-lyong CHOI , Dong-mok WHANG , Jae-hyun LEE
IPC分类号： H01L21/20
CPC分类号： H01L21/02527 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B2204/04 , C23C16/0272 , C23C16/26 , C30B25/02 , C30B29/08 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/0262
摘要： A method of manufacturing graphene includes forming a germanium layer on a surface of a substrate, and forming the graphene directly on the germanium layer by supplying carbon-containing gas into a chamber in which the substrate is disposed.
摘要翻译： 制造石墨烯的方法包括在基板的表面上形成锗层，并且通过将含碳气体供给到其中设置基板的室中，直接在锗层上形成石墨烯。
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公开(公告)号：US20110133153A1
公开(公告)日：2011-06-09
申请号：US12959501
申请日：2010-12-03
申请人： Eun-kyung LEE , Dong-mok WHANG , Byoung-lyong CHOI , Sun-hwak WOO
发明人： Eun-kyung LEE , Dong-mok WHANG , Byoung-lyong CHOI , Sun-hwak WOO
CPC分类号： B82Y40/00 , B82Y10/00 , B82Y30/00 , H01L29/0665 , H01L31/035209 , H01L31/035227
摘要： Provided are a porous nanostructure and a method of manufacturing the same. The porous nanostructure includes a plurality of pores disposed on an exterior surface of a nanostructure, wherein at least a portion of the plurality of pores extend inside the nanostructure.
摘要翻译： 提供一种多孔纳米结构及其制造方法。 多孔纳米结构包括设置在纳米结构的外表面上的多个孔，其中多个孔的至少一部分在纳米结构内部延伸。
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公开(公告)号：US20100213434A1
公开(公告)日：2010-08-26
申请号：US12560768
申请日：2009-09-16
IPC分类号： H01L29/16 , H01L21/205
CPC分类号： H01L21/02532 , H01L21/0242 , H01L21/02422 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02521 , H01L21/02603 , H01L21/0262 , H01L21/02639
摘要： A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition (“CVD”) method.
摘要翻译： 一种合成纳米线的方法。 该方法包括在基板上设置包括锗（Ge）的第一氧化物层，通过退火第一氧化物层形成包括核的第二氧化物层，并通过化学气相沉积（“CVD”）从核中生长包括锗的纳米线 ） 方法。
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7.发明申请公开(公告)号：US20120326115A1
公开(公告)日：2012-12-27
申请号：US13470487
申请日：2012-05-14
申请人： Byoung-lyong CHOI , Eun-kyung LEE , Dong-mok WHANG
发明人： Byoung-lyong CHOI , Eun-kyung LEE , Dong-mok WHANG
CPC分类号： H01L29/1606 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02164 , H01L21/02381 , H01L21/0245 , H01L21/02491 , H01L21/02527 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L29/0673 , H01L29/66045 , H01L29/66439 , H01L29/66742 , H01L29/775 , H01L29/785 , H01L29/78684 , H01L29/78696
摘要： A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces of the growth layer.
摘要翻译： 石墨烯结构和石墨烯结构的制造方法以及石墨烯装置和石墨烯装置的制造方法。 石墨烯结构包括基材; 生长层，其设置在所述基板上并且具有暴露的侧表面; 以及设置在生长层的侧表面上的石墨烯层。
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8.发明申请COMPOSITE STRUCTURE OF GRAPHENE AND NANOSTRUCTURE AND METHOD OF MANUFACTURING THE SAME 审中-公开石墨和纳米结构的复合结构及其制造方法公开(公告)号：US20110121264A1
公开(公告)日：2011-05-26
申请号：US12765930
申请日：2010-04-23
CPC分类号： H01L21/02639 , B82Y10/00 , H01B1/04 , H01L21/02376 , H01L21/02444 , H01L21/02521 , H01L21/02653 , H01L29/0665 , H01L29/1606
摘要： A composite structure includes; graphene and at least one substantially one-dimensional nanostructure disposed on the graphene.
摘要翻译： 复合结构包括： 石墨烯和设置在石墨烯上的至少一个基本上一维的纳米结构。
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公开(公告)号：US20110114894A1
公开(公告)日：2011-05-19
申请号：US12766258
申请日：2010-04-23
CPC分类号： H01L29/413 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/194 , H01L21/02381 , H01L21/02422 , H01L21/02521 , H01L21/02527 , H01L21/02554 , H01L21/02639 , H01L21/02653 , H01L29/0665 , H01L29/0676 , H01L29/1606 , H01L51/0048
摘要： A composite structure and a method of manufacturing the composite structure. The composite structure includes a graphene sheet; and a nanostructure oriented through the graphene sheet and having a substantially one-dimensional shape.
摘要翻译： 复合结构和复合结构的制造方法。 复合结构包括石墨烯片; 以及通过石墨烯片取向并具有基本上一维形状的纳米结构。
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公开(公告)号：US20120141700A1
公开(公告)日：2012-06-07
申请号：US13229183
申请日：2011-09-09
申请人： Byoung-lyong CHOI , Eun-kyung LEE , Dong-mok WHANG
发明人： Byoung-lyong CHOI , Eun-kyung LEE , Dong-mok WHANG
CPC分类号： H01L21/02381 , C01B32/182 , H01L21/02428 , H01L21/02444 , H01L21/0245 , H01L21/02502 , H01L21/02505 , H01L21/02527 , H01L21/0259 , H01L21/02606 , H01L21/02664 , Y10T428/13 , Y10T428/24273 , Y10T428/24479 , Y10T428/30
摘要： A graphene structure and a method of forming the same may include a graphene formed in a three-dimensional (3D) shape, e.g., a column shape, a stacking structure, and a three-dimensionally connected structure. The graphene structure can be formed by using Ge.
摘要翻译： 石墨烯结构及其形成方法可以包括以三维（3D）形状形成的石墨烯，例如柱状，堆叠结构和三维连接的结构。 可以使用Ge形成石墨烯结构。
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