中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.019 seconds)

    CMP COMPOSITIONS SELECTIVE FOR OXIDE AND NITRIDE WITH HIGH REMOVAL RATE AND LOW DEFECTIVITY
    4.
    发明申请
    CMP COMPOSITIONS SELECTIVE FOR OXIDE AND NITRIDE WITH HIGH REMOVAL RATE AND LOW DEFECTIVITY 有权
    选择具有高去除率和低缺陷度的氧化物和硝酸盐的CMP组合物

    公开(公告)号：US20130244433A1

    公开(公告)日：2013-09-19

    申请号：US13799920

    申请日：2013-03-13

    Applicant: CABOT MICROELECTRONICS CORPORATION

    Inventor： Brian Reiss ,  Glenn Whitener

    IPC: C09G1/02 ,  H01L21/306

    CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

    Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, one or more nonionic polymers, optionally one or more phosphonic acids, optionally one or more nitrogen-containing zwitterionic compounds, optionally one or more sulfonic acid copolymers, optionally one or more anionic copolymers, optionally one or more polymers comprising quaternary amines, optionally one or more compounds that adjust the pH of the polishing compositions, water, and optionally one or more additives. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

    Abstract translation: 本发明提供了一种化学机械抛光组合物，其含有二氧化铈研磨剂，一种或多种非离子聚合物，任选的一种或多种膦酸，任选的一种或多种含氮两性离子化合物，任选的一种或多种磺酸共聚物，任选的一种或多种阴离子 共聚物，任选的一种或多种包含季胺的聚合物，任选的一种或多种调节抛光组合物的pH的化合物，水和任选的一种或多种添加剂。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。

    Mixed abrasive polishing compositions
    7.
    发明授权
    Mixed abrasive polishing compositions 有权
    混合研磨抛光组合物

    公开(公告)号：US09340706B2

    公开(公告)日：2016-05-17

    申请号：US14051121

    申请日：2013-10-10

    Applicant: Cabot Microelectronics Corporation

    Inventor： Brian Reiss ,  Jakub Nalaskowski ,  Viet Lam ,  Renhe Jia ,  Jeffrey Dysard

    IPC: C09G1/02 ,  H01L21/306 ,  H01L21/02

    CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02013 ,  H01L21/30625 ,  H01L21/31053

    Abstract: The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are ceria particles, second abrasive particles, wherein the second abrasive particles are ceria particles, surface-modified silica particles, or organic particles, a pH-adjusting agent, and an aqueous carrier. The polishing compositions also exhibit multimodal particle size distributions.

    Abstract translation: 本发明提供化学 - 机械抛光组合物和用化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 抛光组合物包括第一磨料颗粒，其中第一磨料颗粒是二氧化铈颗粒，第二磨料颗粒，其中第二磨料颗粒是二氧化铈颗粒，表面改性二氧化硅颗粒或有机颗粒，pH调节剂和含水载体 。 抛光组合物还表现出多峰粒度分布。

    Wet-process ceria compositions for polishing substrates, and methods related thereto
    8.
    发明授权
    Wet-process ceria compositions for polishing substrates, and methods related thereto 有权
    用于抛光基底的湿法二氧化铈组合物及其相关方法

    公开(公告)号：US09281210B2

    公开(公告)日：2016-03-08

    申请号：US14050977

    申请日：2013-10-10

    Applicant: Cabot Microelectronics Corporation

    Inventor： Brian Reiss ,  Jeffrey Dysard ,  Sairam Shekhar

    IPC: H01L21/306 ,  H01L21/3105

    CPC classification number: H01L21/31053 ,  C09G1/02 ,  C09K3/1463

    Abstract: Disclosed are a chemical-mechanical polishing composition and a method of polishing a substrate. The polishing composition comprises low average particle size (e.g., 30 nm or less) wet-process ceria abrasive particles, at least one alcohol amine, and water, wherein said polishing composition has a pH of about 6. The polishing composition can be used, e.g., to polish any suitable substrate, such as a polysilicon wafer used in the semiconductor industry.

    Abstract translation: 公开了化学机械抛光组合物和抛光基材的方法。 抛光组合物包含低平均粒度（例如，30nm或更小）的湿法二氧化铈磨料颗粒，至少一种醇胺和水，其中所述抛光组合物的pH值约为6.抛光组合物可以使用， 例如，以抛光任何合适的衬底，例如在半导体工业中使用的多晶硅晶片。

    Wet-process ceria compositions for polishing substrates, and methods related thereto
    9.
    发明授权
    Wet-process ceria compositions for polishing substrates, and methods related thereto 有权
    用于抛光基底的湿法二氧化铈组合物及其相关方法

    公开(公告)号：US09279067B2

    公开(公告)日：2016-03-08

    申请号：US14050722

    申请日：2013-10-10

    Applicant: Cabot Microelectronics Corporation

    Inventor： Brian Reiss

    IPC: C09G1/02 ,  B24B1/00

    CPC classification number: C09G1/02 ,  B24B1/00

    Abstract: Disclosed are a chemical-mechanical polishing composition and a method of polishing a substrate. The polishing composition comprises wet-process ceria abrasive particles, (e.g., about 120 nm or less), at least one alcohol amine, at least one surfactant having at least one hydrophilic moiety and at least one hydrophobic moiety, the surfactant having a molecular weight of about 1000, and water, wherein the polishing composition has a pH of about 6. The polishing composition can be used, e.g., to polish any suitable substrate, such as a polysilicon wafer used in the semiconductor industry.

    Abstract translation: 公开了化学机械抛光组合物和抛光基材的方法。 抛光组合物包括湿法二氧化铈磨料颗粒（例如，约120nm或更小），至少一种醇胺，至少一种具有至少一个亲水部分和至少一个疏水部分的表面活性剂，所述表面活性剂具有分子量 约1000，和水，其中抛光组合物具有约6的pH。抛光组合物可以用于例如抛光任何合适的基底，例如在半导体工业中使用的多晶硅晶片。

    CMP compositions selective for oxide and nitride with high removal rate and low defectivity
    10.
    发明授权
    CMP compositions selective for oxide and nitride with high removal rate and low defectivity 有权
    对于具有高去除率和低缺陷率的氧化物和氮化物选择性的CMP组合物

    公开(公告)号：US08916061B2

    公开(公告)日：2014-12-23

    申请号：US13799680

    申请日：2013-03-13

    Applicant: Cabot Microelectronics Corporation

    Inventor： Brian Reiss ,  Michael Willhoff ,  Daniel Mateja

    IPC: H01L21/3063 ,  H01L21/306 ,  C09K3/14 ,  H01L21/3105 ,  C09G1/02

    CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

    Abstract: The invention relates to a chemical-mechanical polishing composition comprising a ceria abrasive, cations of one or more lanthanide metals, one or more nonionic polymers, water, and optionally one or more additives. The invention further relates to a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises one or more of silicon oxide, silicon nitride, and polysilicon.

    Abstract translation: 本发明涉及一种化学机械抛光组合物，其包含二氧化铈磨料，一种或多种镧系元素金属的阳离子，一种或多种非离子聚合物，水和任选的一种或多种添加剂。 本发明还涉及用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底包括氧化硅，氮化硅和多晶硅中的一种或多种。

Patent Agency Ranking