公开(公告)号：US20170352722A1

公开(公告)日：2017-12-07

申请号：US15539554

申请日：2016-09-10

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Shengrong ZHONG ,  Xiaoshe DENG ,  Dongfei ZHOU

IPC: H01L29/06 ,  H01L29/861 ,  H01L21/768 ,  H01L21/02 ,  H01L21/04 ,  H02M3/158 ,  H01L21/78

Abstract: A semiconductor rectifying device and a method of manufacturing the same. The semiconductor rectifying device includes: a substrate of a first conductivity type (100), an epitaxial layer of a first conductivity type (200) formed on the substrate of the first conductivity type (100), wherein the epitaxial layer of the first conductivity type (200) defines a plurality of trenches (310) thereon; a filling structure (300) comprising an insulating material formed on the inner surface of the trench (310) and a conductive material filled in the trench (310); a doped region of a second conductivity type (400) formed in the surface of the epitaxial layer of the first conductivity type (200) located between the filling structures (300); an upper electrode (600) formed on a surface of the epitaxial layer of the first conductivity type (200); a guard ring (700) formed in the surface layer of the epitaxial layer of the first conductivity type (200); and a guard layer (800).

公开(公告)号：US20160380071A1

公开(公告)日：2016-12-29

申请号：US14902516

申请日：2014-07-29

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Xiaoshe DENG ,  Qiang RUI ,  Shuo ZHANG ,  Genyi WANG

IPC: H01L29/66 ,  H01L29/739 ,  H01L21/265 ,  H01L29/06 ,  H01L21/311

CPC classification number: H01L29/66333 ,  H01L21/26513 ,  H01L21/31111 ,  H01L29/0611 ,  H01L29/7395

Abstract: An insulated gate bipolar transistor (IGBT) manufacturing method comprises the following steps: providing a semiconductor substrate of a first conducting type, the semiconductor substrate having a first major surface and a second major surface (100); forming a field-stop layer of a second conducting type on the first major surface of the semiconductor substrate (200); growing an oxide layer on the field-stop layer (300); removing the oxide layer from the field-stop layer (400); forming an epitaxial layer on the field-stop layer from which the oxide layer has been removed; and then manufacturing an IGBT on the epitaxial layer (600). Before regular manufacturing of an IGBT, the surface defects of a substrate material are eliminated as many as possible before epitaxy is formed, and the quality of an epitaxial layer is improved, thereby improving the quality of the whole IGBT.

Abstract translation: 一种绝缘栅双极晶体管（IGBT）制造方法，包括以下步骤：提供第一导电类型的半导体衬底，该半导体衬底具有第一主表面和第二主表面（100）; 在半导体衬底（200）的第一主表面上形成第二导电类型的场阻止层; 在所述场 - 停止层（300）上生长氧化物层; 从所述场停止层（400）去除所述氧化物层; 在去除了氧化物层的场 - 停止层上形成外延层; 然后在外延层（600）上制造IGBT。 在正常制造IGBT之前，在形成外延之前尽可能地消除基板材料的表面缺陷，提高外延层的质量，从而提高整个IGBT的质量。

公开(公告)号：US20180102406A1

公开(公告)日：2018-04-12

申请号：US15840791

申请日：2017-12-13

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Shengrong ZHONG ,  Dongfei ZHOU ,  Xiaoshe DENG ,  Genyi WANG

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/761 ,  H01L29/04 ,  H01L29/161 ,  H01L29/66 ,  H01L29/10 ,  H01L29/739 ,  H01L29/20

CPC classification number: H01L29/0623 ,  H01L21/761 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/20 ,  H01L29/66333 ,  H01L29/6634 ,  H01L29/7395 ,  H01L29/7396

Abstract: An insulated gate bipolar transistor (100) is provided. A substrate (10) of the insulated gate bipolar transistor (100) is of an N type. A P-type region (16) is disposed on a back of the N-type substrate. A back metal structure (18) is disposed on a back of the P-type region (16). A terminal protection ring is disposed in a terminal structure. A polysilicon gate (31) is disposed on a front surface of the substrate (10) in an active region. Sidewalls (72) are disposed at two sides of the polysilicon gate (31) on the substrate (10). An interlayer medium (81) covered with the polysilicon gate (31) and the sidewalls (72) is disposed on the substrate (10). The interlayer medium (81) is covered with a metal lead wire layer (91). An N-type carrier enhancement region (41) is disposed in the substrate (10) in the active region. A P-type body region (51) is disposed in the carrier enhancement region (41). An N-type heavily doped region (61) is disposed in the P-type body region (51). A P-type heavily doped region (71) is disposed in the N-type heavily doped region (61). An inward recessed shallow pit (62) with a depth of 0.15 to 0.3 micrometers is formed on a surface of the P-type heavily doped region (71). By disposing the carrier enhancement region (41), the carrier concentration of a channel can be increased and a forward voltage drop can be reduced; in addition, the shallow pit (62) can make a device obtain good impurity distribution and a large metal contact area, thereby improving the performance of the device.

公开(公告)号：US20160240528A1

公开(公告)日：2016-08-18

申请号：US14901622

申请日：2014-06-09

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Xiaoshe DENG ,  Shuo ZHANG ,  Qiang RUI ,  Genyi WANG

IPC: H01L27/07 ,  H01L29/739 ,  H01L29/06 ,  H01L29/868 ,  H01L21/8249

CPC classification number: H01L27/0727 ,  H01L21/8249 ,  H01L29/0619 ,  H01L29/0684 ,  H01L29/0834 ,  H01L29/402 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/868

Abstract: An insulated gate bipolar translator (IGBT) with a built-in diode and a manufacturing method thereof are provided. The IGBT comprises: a semiconductor substrate (1) of the first conduction type which has a first major surface (1S1) and a second major surface (1S2), wherein the semiconductor substrate (1) comprises an active region (100) and a terminal protection area (200) which is located at the outer side of the active region; an insulated gate transistor unit which is formed at the side of the first major surface (1S1) of the active region (100), wherein a channel of the first conduction type is formed thereon during the conduction thereof; and first semiconductor layers (10) of the first conduction type and second semiconductor layers (11) of the second conduction type of the active region, which are formed at the side of the second major surface (1S2) of the semiconductor substrate (1) alternately, wherein the IGBT only comprises the second semiconductor layers (11) in the terminal protection area (200) which is located at the side of the second major surface (1S2) of the semiconductor substrate (1).

Abstract translation: 提供了具有内置二极管的绝缘栅双极转换器（IGBT）及其制造方法。 IGBT包括：具有第一主表面（1S1）和第二主表面（1S2）的第一导电类型的半导体衬底（1），其中半导体衬底（1）包括有源区（100）和端子 保护区域（200），其位于有源区域的外侧; 绝缘栅晶体管单元，其形成在有源区（100）的第一主表面（1S1）侧，其中在其导通期间在其上形成第一导电类型的沟道; 以及形成在半导体衬底（1）的第二主表面（1S2）侧的第一导电类型和第二导电类型的有源区的第二半导体层（11）的第一半导体层（10） 交替地，其中IGBT仅包括端子保护区域（200）中位于半导体衬底（1）的第二主表面（1S2）侧的第二半导体层（11）。

公开(公告)号：US20160380072A1

公开(公告)日：2016-12-29

申请号：US14902517

申请日：2014-07-22

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Shengrong ZHONG ,  Xiaoshe DENG ,  Genyi WANG ,  Dongfei ZHOU

IPC: H01L29/66 ,  H01L29/40 ,  H01L21/265 ,  H01L29/739 ,  H01L21/02 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L29/66333 ,  H01L21/02233 ,  H01L21/26513 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/7395

Abstract: An insulated gate bipolar transistor and a manufacturing method therefor. The insulated gate bipolar transistor comprises a semiconductor substrate (1) of a first conductive type, which is provided with a first major surface (1S1) and a second major surface (1S2), wherein the semiconductor substrate (1) comprises a primitive cell area (2) and a terminal protection area (4) which is located outside the primitive cell area; a first semiconductor layer (5) of a first conductive type which is formed at the side of the first major surface of the semiconductor substrate (1), wherein the doping concentration of the first semiconductor layer (5) is higher than the doping concentration of the semiconductor substrate (1); and an insulated gate transistor unit which is formed at the side of the first major surface of the first semiconductor layer (5) in the primitive cell area, wherein the insulated gate transistor unit is conducted, a channel of a first conductive type is formed. Compared with the prior art, the present invention not only can improve the voltage resistance reliability of the insulted gate bipolar transistor, but also can reduce the forward conductive voltage drop of the insulated gate bipolar transistor.

Abstract translation: 一种绝缘栅双极晶体管及其制造方法。 绝缘栅双极晶体管包括具有第一主表面（1S1）和第二主表面（1S2）的第一导电类型的半导体衬底（1），其中半导体衬底（1）包括原始单元区域 （2）和位于原始单元区域外部的端子保护区域（4）; 形成在半导体衬底（1）的第一主表面侧的第一导电类型的第一半导体层（5），其中第一半导体层（5）的掺杂浓度高于 半导体衬底（1）; 以及绝缘栅晶体管单元，其形成在原电池区域中的第一半导体层（5）的第一主表面侧，其中绝缘栅晶体管单元导通，形成第一导电类型的沟道。 与现有技术相比，本发明不仅可以提高绝缘栅双极晶体管的耐电压可靠性，而且可以降低绝缘栅双极晶体管的正向导通电压降。

公开(公告)号：US20160379974A1

公开(公告)日：2016-12-29

申请号：US14902519

申请日：2014-08-19

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Shuo ZHANG ,  Qiang RUI ,  Genyi WANG ,  Xiaoshe DENG

IPC: H01L27/06 ,  H01L29/739 ,  H01L29/06 ,  H01L21/265 ,  H01L21/304 ,  H01L29/10 ,  H01L29/66 ,  H01L21/3065

CPC classification number: H01L27/0664 ,  H01L21/263 ,  H01L21/26513 ,  H01L21/304 ,  H01L21/3065 ,  H01L29/0638 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/7395

Abstract: A manufacturing method for reverse conducting insulated gate bipolar transistor, the manufacturing method is characterized by the use of polysilicon for filling in grooves on the back of a reverse conducting insulated gate bipolar transistor. The parameters of reverse conducting diodes on the back of the reverse conducting insulated gate bipolar transistor can be controlled simply by controlling the doping concentration of the polysilicon accurately, indicating relatively low requirements for process control. The reverse conducting insulated gate bipolar transistor manufacturing method is relatively low in requirements for process control and relatively small in manufacturing difficulty.

Abstract translation: 一种用于反向导通绝缘栅双极晶体管的制造方法，其制造方法的特征在于使用多晶硅来填充反向导通绝缘栅双极晶体管背面的沟槽。 反向导通绝缘栅双极晶体管背面的反向导通二极管的参数可以简单地通过精确控制多晶硅的掺杂浓度来控制，从而对过程控制要求相对较低。 反向导通绝缘栅双极晶体管制造方法对于工艺控制的要求相对较低，制造难度相对较小。

公开(公告)号：US20160372571A1

公开(公告)日：2016-12-22

申请号：US14902302

申请日：2014-09-02

Applicant: CSMC TECHNOLOGIES FAB1 CO.,LTD.

Inventor： Wanli Wang ,  Xiaoshe DENG ,  Genyi WANG ,  Qiang RUI

IPC: H01L29/66 ,  H01L21/308 ,  H01L29/06 ,  H01L21/265 ,  H01L29/739 ,  H01L21/268

CPC classification number: H01L29/66333 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/308 ,  H01L21/3247 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/41716 ,  H01L29/7395

Abstract: A reverse conducting insulated gate bipolar transistor (IGBT) manufacturing method, comprising the following steps: providing a substrate having an IGBT structure formed on the front surface thereof; implanting P+ ions onto the back surface of the substrate; forming a channel on the back surface of the substrate through photolithography and etching processes; planarizing the back surface of the substrate through a laser scanning process to form P-type and N-type interval structures; and forming a back surface collector by conducting a back metalizing process on the back surface of the substrate. Laser scanning process can process only the back surface structure requiring annealing, thus solve the problem of the front surface structure of the reverse conducting IGBT restricting back surface annealing to a low temperature, improving the P-type and N-type impurity activation efficiency in the back surface structure of the reverse conducting IGBT, and enhancing the performance of the reverse conducting IGBT.

Abstract translation: 一种反向导通绝缘栅双极晶体管（IGBT）制造方法，包括以下步骤：提供在其前表面上形成有IGBT结构的基板; 将P +离子注入衬底的背面; 通过光刻和蚀刻工艺在衬底的背表面上形成通道; 通过激光扫描工艺平坦化衬底的背面以形成P型和N型间隔结构; 以及通过在所述基板的背面进行背面金属化处理而形成背面集电体。 激光扫描过程只能处理需要退火的背面结构，从而解决了限制背面退火至低温的反向导通IGBT的前表面结构的问题，提高了P型和N型杂质的活化效率 反向导通IGBT的背面结构，提高反向导通IGBT的性能。

公开(公告)号：US20160240608A1

公开(公告)日：2016-08-18

申请号：US14901606

申请日：2014-06-06

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Shuo ZHANG ,  Qiang RUI ,  Xiaoshe DENG ,  Genyi WANG

IPC: H01L29/06 ,  H01L23/31 ,  H01L23/528 ,  H01L23/532 ,  H01L29/66 ,  H01L29/739

CPC classification number: H01L29/0607 ,  H01L23/3157 ,  H01L23/3171 ,  H01L23/528 ,  H01L23/53219 ,  H01L23/53247 ,  H01L29/0619 ,  H01L29/0834 ,  H01L29/66325 ,  H01L29/66333 ,  H01L29/7393 ,  H01L29/7395

Abstract: A field-stop reverse conducting insulated gate bipolar transistor and a manufacturing method thereof. The transistor comprises a terminal structure (200) and an active region (100). An underlayment of the field-stop reverse conducting insulated gate bipolar transistor is an N-type underlayment, the back surface of the underlayment is provided with an N-type electric field stop layer (1), one surface of the electric field stop layer (1) departing from the underlayment is provided with a back-surface P-type structure (10), and the surface of the back-surface P-type structure (10) is provided with a back-surface metal layer (12). A plurality of polysilicon filling structures (11) which penetrate into the electric field stop layer (1) from the back-surface P-type structure (10) are formed in the active region (100).

Abstract translation: 场阻反向导通绝缘栅双极晶体管及其制造方法。 晶体管包括端子结构（200）和有源区（100）。 场阻反向导通绝缘栅双极晶体管的底层是N型衬垫，衬垫的背面设置有N型电场停止层（1），电场停止层的一个表面 在背衬P型结构（10）的背面设置有背面金属层（12）的背面P型结构（10）的表面。 在有源区（100）中形成有从背面P型结构（10）贯穿电场停止层（1）的多个多晶硅填充结构（11）。

公开(公告)号：US20160163841A1

公开(公告)日：2016-06-09

申请号：US14392251

申请日：2014-06-05

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Shuo ZHANG ,  Qiang RUI ,  Genyi WANG ,  Xiaoshe DENG

IPC: H01L29/739 ,  H01L29/08 ,  H01L29/66 ,  H01L29/49 ,  H01L21/02 ,  H01L29/417 ,  H01L21/311 ,  H01L21/265 ,  H01L21/324 ,  H01L29/423 ,  H01L21/285 ,  H01L29/40 ,  H01L21/28

CPC classification number: H01L29/7395 ,  H01L21/02164 ,  H01L21/26513 ,  H01L21/28035 ,  H01L21/2855 ,  H01L21/31116 ,  H01L21/324 ,  H01L29/0619 ,  H01L29/0804 ,  H01L29/0834 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/407 ,  H01L29/41708 ,  H01L29/42364 ,  H01L29/4916 ,  H01L29/66333

Abstract: A field-stop reverse conducting insulated gate bipolar transistor and a manufacturing method therefor. The transistor comprises a terminal structure (200) and an active region (100). An underlayment of the field-stop reverse conducting insulated gate bipolar transistor is an N-type underlayment, the back surface of the underlayment is provided with an N-type electric field stop layer (1), one surface of the electric field stop layer departing from the underlayment is provided with a back-surface P-type structure (10), and the surface of the back-surface P-type structure is provided with a back-surface metal layer (12). A plurality of notches (11) which penetrate through the back-surface P-type structure (10) from the back-surface metal layer (12) to the electric field stop layer (1) are formed in the active region (100), and metals of the back-surface metal layer (12) are filled into the notches (11) to form a metal structure which extends into the electric field stop layer (1).

Abstract translation: 一种场控反向导通绝缘栅双极晶体管及其制造方法。 晶体管包括端子结构（200）和有源区（100）。 场阻反向导通绝缘栅双极晶体管的底层是N型垫层，底层的背面设置有N型电场停止层（1），电场停止层的一个表面离开 从垫层设置有背面P型结构（10），并且背面P型结构的表面设置有背面金属层（12）。 在有源区域（100）中形成有从后表面金属层（12）穿过背面P型结构（10）到电场停止层（1）的多个凹口（11） 并且背面金属层（12）的金属填充到凹口（11）中以形成延伸到电场停止层（1）中的金属结构。